Abstract:
A method for manufacturing an IC substrate includes following steps: providing a roll of double-sided flexible copper clad laminate; converting the roll of double sided flexible copper clad laminate into a roll of double sided flexible wiring board in a roll to roll manner; cutting the roll of double-sided flexible wiring board into a plurality of separate sheets of double sided flexible wiring board; forming first and second rigid insulating layers on the first and second wiring layers of each sheet of double sided flexible wiring board; forming third and fourth wiring layers on the first and second rigid insulating layers, and electrically connecting the first and third wiring layers, and electrically connecting the fourth and second wiring layers, thereby obtaining a sheet of substrate having a plurality of IC substrate units; and cutting the sheet of substrate into separate IC substrate units.
Abstract:
An active chip package substrate and a method for preparing the same. The active chip package substrate includes: a core board; at least one upper active chip, embedded in the core board and having an active surface facing toward a lower surface of the core board, the upper active chip being an active bare chip; and at least one lower active chip, embedded in the core board and having an active surface facing toward an upper surface of the core board, the lower active chip being an active bare chip.
Abstract:
A printed wiring board includes an interlayer resin insulation layer having a penetrating hole, a conductive circuit formed on a first surface of the interlayer resin insulation layer, a filled via conductor formed in the penetrating hole of the interlayer resin insulation layer and connected to the conductive circuit, a first surface-treatment coating structure formed on a first surface of the filled via conductor and having an electroless plating structure, and a second surface-treatment coating structure formed on a second surface of the filled via conductor on an opposite side with respect to the first surface-treatment coating structure and having an electroless plating structure. The filled via conductor includes a first conductive layer formed on side wall of the penetrating hole and a plated material filling the penetrating hole, and the first surface-treatment coating structure has a thickness which is different from a thickness of the second surface-treatment coating structure.
Abstract:
A system and method for “pixelating” a three-dimensional circuit structure into a three-dimensional matrix of cubes that are located with respect to a coordinate system. The design step is typically performed on a conventional computer using computer aided design software that pixelates the proposed circuit structure into an array of uniformly sized cube. The fabrication process involves adding and subtracting bulk materials from the individual cubic positions within the pixelated representation of the circuit structure. Various existing and new techniques can be used to add or subtract bulk materials as the cubic positions within the matrix to construct the circuit structure.
Abstract:
A method of manufacturing a flex-rigid wiring board includes disposing a non-flexible substrate and a flexible board side by side in the horizontal direction of the substrate and board such that an end of the substrate is positioned adjacent to an end of the board and forms boundary between the board and the substrate with respect to the end of the board, covering the boundary between the board and the substrate with an insulating layer such that the insulating layer is positioned on the board and the substrate across the boundary, forming a second conductor pattern on the insulating layer, forming a via hole which passes through the insulating layer and reaches a first conductor pattern of the board, and plating the via hole such that a via conductor connecting the first and second patterns. The flexible board includes a flexible substrate and the first pattern formed over the substrate.
Abstract:
Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the glass transition temperatures of the earlier applied dielectric layers. In one embodiment, the glass transition temperatures of earlier applied dielectric films in a build-up interconnect are increased through a thermosetting process to exceed the temperature for laminating the later applied dielectric films. In one embodiment, a polyimide material is formed with embedded catalysts to promote cross-linking after a film of the polyimide material is laminated (e.g., through photo-chemical or thermal degradation of the encapsulant of the catalysts). In one embodiment, the solder resist opening walls have a wettable layer generated through laser assisted seeding so that there is no gap between the solder resist opening walls and no underfill in the solder resist opening.
Abstract:
A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 μm, the dielectric layer has a thickness of from 0.3 to 5 μm, and the conductor layer has a thickness of from 0.3 to 10 μm. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 μm, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 μm, and a minimum via pitch is from 100 to 350 μm.
Abstract:
A component includes a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces. Each conductive element contains an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth. The alloy has a composition that varies with distance in at least one direction across the conductive element. A concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeter.
Abstract:
An interposer is presented. The interposer includes an interposer base having first and second surfaces. A redistribution layer is disposed on a first surface of the interposer base. The interposer has at least one interposer pad coupled to the redistribution layer. It also includes at least one interposer contact on the second surface. The interposer contact is electrically coupled to the interposer pad via the redistribution layer. The interposer also includes at least one interposer via through the interposer base for coupling the interposer contact to the redistribution layer. The interposer via includes reflowed conductive material of the interposer contact.
Abstract:
A method for manufacturing a printed circuit board including providing a first resin substrate having a resin plate and a circuit pattern formed on a surface of the resin plate, providing a second resin substrate having a resin plate and an accommodation portion formed in the resin plate of the second substrate, connecting an electrode of a capacitor to the circuit pattern of the first substrate with a bonding material such that the capacitor is mounted to the first substrate, attaching the second substrate to the resin substrate through a bonding resin layer such that the capacitor on the first substrate is accommodated in the accommodation portion of the second substrate, and forming a via hole in the first substrate such that the via hole is electrically connected to the electrode of the capacitor in the accommodation portion of the second substrate.