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1.PRESSURE CONNECTION FOR A SEMICONDUCTOR DIE USING FLEXIBLE NANOWIRES AND CORRESPONDING MANUFACTURING METHOD 审中-公开
标题翻译: 使用柔性纳米管制造半导体器件的压力连接和相应的制造方法公开(公告)号:WO2015068855A3
公开(公告)日:2015-07-16
申请号:PCT/JP2014079899
申请日:2014-11-05
发明人: EWANCHUK JEFFREY , MOLLOV STEFAN
IPC分类号: H01L23/485 , H01L21/60
CPC分类号: H01L24/72 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/90 , H01L2224/0381 , H01L2224/11001 , H01L2224/11462 , H01L2224/1147 , H01L2224/11602 , H01L2224/13078 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/1411 , H01L2224/16245 , H01L2224/17181 , H01L2224/27001 , H01L2224/27462 , H01L2224/2747 , H01L2224/27602 , H01L2224/29078 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/33181 , H01L2224/81901 , H01L2224/83901 , H01L2924/35 , H01L2924/3512 , H01L2924/35121 , H01L2924/386 , H01L2924/00014 , H01L2924/00012
摘要: The present invention concerns a semiconductor die (12, 30) comprising at least two metallic pads (10) that are electrically connected to said die (12, 30), wherein each pad (10) has on its surface a plurality of nanowires (15, 31) made of metal, alloy or polymer disposed orthogonally on the surface of the pad (10), the nanowires of each pad (10) being in contact with an electrically conducting element such as a part of a press pack casing (33), the electrically conducting element and the pad (10) performing a pressure in the axial direction of the nanowires (15, 31), each nanowire (15, 31) having a ratio height to width which makes the nanowire (15, 31) flexible when subject to a pressure in the axial direction of the nanowire (15, 31). The pads (10) and the nanowires (15, 31) form also a thermal connection used for conducting thermal energy away from the die (12, 30). The nanowires (15, 31) are formed by forming an oxide layer on the surface of each pad (10), the oxide layer comprising pores, filling the pores using a metallisation process, optionally polishing the surface of the oxide layer and etching the oxide layer in order to free the nanowires (15, 31).
摘要翻译: 本发明涉及一种包括至少两个电连接到所述管芯(12,30)的金属焊盘(10)的半导体管芯(12,30),其中每个焊盘(10)在其表面上具有多个纳米线(15 ,31)由金属,合金或聚合物构成,其正交地布置在所述焊盘(10)的表面上,每个焊盘(10)的纳米线与导电元件(例如压盖外壳(33)的一部分)接触, ,所述导电元件和所述垫(10)在所述纳米线(15,31)的轴向上施加压力,每个纳米线(15,31)具有与所述纳米线(15,31)柔性的比率的高宽比 当受到纳米线(15,31)的轴向方向的压力时。 焊盘(10)和纳米线(15,31)也形成用于将热能远离模具(12,30)传导的热连接。 纳米线(15,31)通过在每个焊盘(10)的表面上形成氧化物层而形成,氧化物层包含孔,使用金属化工艺填充孔,任选地抛光氧化物层的表面并蚀刻氧化物 层以释放纳米线(15,31)。
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公开(公告)号:WO2015068855A2
公开(公告)日:2015-05-14
申请号:PCT/JP2014/079899
申请日:2014-11-05
发明人: EWANCHUK, Jeffrey , MOLLOV, Stefan
IPC分类号: H01L23/485
CPC分类号: H01L24/72 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/90 , H01L2224/0381 , H01L2224/11001 , H01L2224/11462 , H01L2224/1147 , H01L2224/11602 , H01L2224/13078 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/1319 , H01L2224/1411 , H01L2224/16245 , H01L2224/17181 , H01L2224/27001 , H01L2224/27462 , H01L2224/2747 , H01L2224/27602 , H01L2224/29078 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/33181 , H01L2224/81901 , H01L2224/83901 , H01L2924/35 , H01L2924/3512 , H01L2924/35121 , H01L2924/386 , H01L2924/00014 , H01L2924/00012
摘要: The present invention concerns a semiconductor die, comprising at least two metallic pads that are electrically connected to said die, characterized in that each pad has on its surface a plurality of nanowires disposed orthogonally on the surface of the pad, each nanowire having a ratio height to width which makes the nanowire flexible when subject to a pressure in the axial direction of the nanowire.
摘要翻译: 本发明涉及一种半导体管芯,其包括至少两个电连接到所述管芯的金属焊盘,其特征在于,每个焊盘的表面上具有多个在焊盘表面上正交设置的纳米线,每个纳米线的比例高度 使纳米线在纳米线的轴向方向受到压力时变宽。
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公开(公告)号:WO2015036032A1
公开(公告)日:2015-03-19
申请号:PCT/EP2013/069003
申请日:2013-09-13
发明人: WIMPLINGER, Markus
CPC分类号: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
摘要: Die Erfindung betrifft ein Verfahren zum Aufbringen einer aus einer Grundschicht und einer Schutzschicht bestehenden Bondschicht auf ein Substrat mit folgenden Verfahrensschritten: Aufbringen eines oxidierbaren Grundmaterials als Grundschicht auf eine Bondseite des Substrats, zumindest teilweises Bedecken der Grundschicht mit einem in dem Grundmaterial zumindest teilweise lösbaren Schutzmaterial als Schutzschicht. Weiterhin betrifft die Erfindung ein korrespondierendes Substrat.
摘要翻译: 本发明涉及一种方法,用于施加由基本层和包括以下步骤在基底上的保护层粘结层的一个基团:在所述基板的接合侧上沉积可氧化的基体材料作为基体层至少部分地覆盖有至少部分可溶于基体层中的基体材料的保护材料为 保护层。 本发明还涉及一种相应的底物。
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公开(公告)号:WO2013129279A1
公开(公告)日:2013-09-06
申请号:PCT/JP2013/054665
申请日:2013-02-25
申请人: 日産自動車株式会社
CPC分类号: H01L24/29 , B22F7/08 , B23K1/0016 , B23K1/002 , B23K1/0053 , B23K1/008 , B23K1/19 , B23K1/20 , B23K35/28 , B23K35/282 , B23K2201/40 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/56 , C22C18/04 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05568 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/29118 , H01L2224/29124 , H01L2224/32245 , H01L2224/83192 , H01L2224/83201 , H01L2224/83375 , H01L2224/83385 , H01L2224/83805 , H01L2924/00014 , H01L2924/01322 , H01L2924/01327 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/3651 , H01L2924/00 , H01L2224/05552
摘要: 半導体チップ3の接合面に金属A(Al、Cu、Ag及びAuから成る群より選ばれた少なくとも1種を主成分とする金属)から成る金属層3c形成する一方、配線金属2の少なくとも接合面を金属B(Al、Cu、Ag及びAuから成る群より選ばれた少なくとも1種を主成分とする金属、但し、金属A及びBが共にAuを主成分とする金属である場合を除く)とし、配線金属2の接合面に微細凹凸2rを設けると共に、両接合面間に金属A及び金属Bに含まれるAu以外の金属とそれぞれ共晶反応を生じる金属としてZnを含むインサート材を介在させ、半導体チップ3と配線金属2を相対的に加圧しつつ加熱し、接合面の酸化皮膜3f、2fを破壊して、接合界面に生じた共晶反応溶融物と共に排出して接合する。
摘要翻译: 在半导体芯片(3)的接合面上形成金属层(3c),该金属层(主要由选自铝,铜,银和金的组中的至少一种金属构成的金属)构成。 同时,使用金属B(主要由选自铝,铜,银和金的至少一种类型的金属组成的金属,但不包括金属A和B主要由金构成的情况),如 至少布线金属(2)的接合面。 显微镜槽(2r)设置在布线金属(2)的接合表面上,以及插入材料,其包含锌作为金属,用于与金属B中包含的金属A和除金之外的金属产生共晶反应 被布置在两个接合表面之间。 半导体芯片(3)和布线金属(2)在被加热的同时相对加压,破坏接合面上的氧化膜(3f,2f),并将熔融材料的氧化膜从接合界面处产生的共晶反应排出 从而连接半导体芯片和布线金属。
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5.VERBINDUNGSANORDNUNG EINES ELEKTRISCHEN UND/ODER ELEKTRONISCHEN BAUELEMENTS 审中-公开
标题翻译: 电气和/或电子元件的连接装置公开(公告)号:WO2013117438A2
公开(公告)日:2013-08-15
申请号:PCT/EP2013/051400
申请日:2013-01-25
申请人: ROBERT BOSCH GMBH
发明人: FRUEH, Christiane , FIX, Andreas
IPC分类号: H01L21/60
CPC分类号: H01L24/32 , B23K1/0008 , B23K1/19 , B23K35/025 , B23K35/3006 , B23K2203/08 , B23K2203/56 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/83 , H01L2224/26125 , H01L2224/26155 , H01L2224/27013 , H01L2224/2732 , H01L2224/29016 , H01L2224/29105 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29124 , H01L2224/29139 , H01L2224/29147 , H01L2224/30515 , H01L2224/32013 , H01L2224/32014 , H01L2224/32225 , H01L2224/32245 , H01L2224/32507 , H01L2224/83101 , H01L2224/83192 , H01L2224/83194 , H01L2224/83801 , H01L2224/83825 , H01L2224/8384 , H01L2224/8392 , H01L2224/83948 , H01L2224/83951 , H01L2924/01013 , H01L2924/0103 , H01L2924/01031 , H01L2924/0105 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/1203 , H01L2924/1304 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/3512 , H01L2924/00
摘要: Die Verbindungsanordnung (100, 200, 300, 400) umfasst mindestens ein elektrisches und/oder elektronisches Bauelement (1). Das mindestens eine elektrische und/oder elektronische Bauelement (10) weist mindestens eine Anschlussfläche (11) auf, welche mittels einer Verbindungsschicht (20) mit einem Fügepartner (40) stoffschlüssig verbunden ist. Die Verbindungsschicht (20) kann beispielsweise eine Klebe-, Lot-, Schweiß-, Sinterverbindung oder eine andere bekannte Verbindung sein, welche Fügepartner unter Ausbildung eines Stoffschlusses verbindet. Des Weiteren ist angrenzend zur Verbindungsschicht (20) stoffschlüssig eine Verstärkungsschicht (30') angeordnet. Die Verstärkungsschicht (30') weist einen höheren Elastizitätsmodul auf, als die Verbindungsschicht (20). Eine besonders große Schutzwirkung ist dadurch gegeben, wenn die Verstärkungsschicht (30') durch eine äußere und eine innere Begrenzung (36, 35) rahmenartig ausgebildet ist und zumindest mit ihrer äußeren Begrenzung (36) die Anschlussfläche (11) des mindesten einen elektrischen und/oder elektronischen Bauelements (10) umschließt.
摘要翻译: 所述的连接装置(100,200,300,400)包括至少一个电气和/或电子元件(1)。 该至少一个电气和/或电子元件(10)具有由接合层(20)(40)锁合的装置连接到对接件的至少一个连接表面(11)。 连接层(20)可以是例如粘合剂,焊料,焊接,烧结,其连接对接件,以形成一材料键合连接或其他已知的连接。 进一步布置为邻近所述连接层(20)实质上的加强层(30“)。 所述加强层(30“)具有弹性比所述粘接层(20)的更高的模量。 特别大的保护效果由下式给出,如果加强层(30“)形成为类似一帧由外和内边界(36,35)和至少与所述连接表面(11)的外边界(36)的至少一个电气和/ 或电子元件(10)包围。
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公开(公告)号:WO2005124850A8
公开(公告)日:2007-06-21
申请号:PCT/JP2005010921
申请日:2005-06-15
申请人: RENESAS TECH CORP , IKEDA OSAMU , OKAMOTO MASAHIDE , HARUTA RYO , KAGII HIDEMASA , OKA HIROI , NAKAMURA HIROYUKI
发明人: IKEDA OSAMU , OKAMOTO MASAHIDE , HARUTA RYO , KAGII HIDEMASA , OKA HIROI , NAKAMURA HIROYUKI
IPC分类号: H01L21/52 , H01L21/60 , H01L23/495
CPC分类号: H01L23/49562 , H01L23/49513 , H01L23/49524 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05111 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05644 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/32013 , H01L2224/32057 , H01L2224/32245 , H01L2224/32507 , H01L2224/37147 , H01L2224/40095 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48644 , H01L2224/48699 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2224/83805 , H01L2224/84801 , H01L2224/85205 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01063 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/01032 , H01L2924/00012 , H01L2924/01022 , H01L2924/01026 , H01L2924/01083 , H01L2924/3512 , H01L2224/48744 , H01L2924/00015 , H01L2224/83205
摘要: A power semiconductor device having a semiconductor element die-mount-connected onto a lead frame in a leadless manner. Die-mount-connection between a semiconductor element (1) and a lead frame (2) that have large thermal expansion coefficient difference between them, wherein the connection is made by an intermetallic compound layer (200) having a melting point of at least 260æC or by a leadless solder having a melting point of 260æC through 400æC, and thermal stress caused by a temperature cycle is buffered by a metal layer (100) having a melting point of at least 260æC. The leadless die-mount-connection can be made without being melted at reflowing and without causing chip-crack under a thermal stress.
摘要翻译: 一种功率半导体器件,具有半导体元件,其以无引线方式管芯安装到引线框架上。 半导体元件(1)和引线框架(2)之间的模具安装连接,它们之间具有较大的热膨胀系数差,其中,连接是由具有至少260℃的熔点的金属间化合物层(200) 或通过熔点为260℃至400℃的无铅焊料,并且由温度周期引起的热应力由熔点至少为260℃的金属层(100)缓冲。 无引线模具安装连接可以在回流时不熔化而不会在热应力下引起芯片裂纹。
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公开(公告)号:WO2005124850A1
公开(公告)日:2005-12-29
申请号:PCT/JP2005/010921
申请日:2005-06-15
IPC分类号: H01L21/52
CPC分类号: H01L23/49562 , H01L23/49513 , H01L23/49524 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05111 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05644 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/32013 , H01L2224/32057 , H01L2224/32245 , H01L2224/32507 , H01L2224/37147 , H01L2224/40095 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48644 , H01L2224/48699 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2224/83805 , H01L2224/84801 , H01L2224/85205 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01063 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/01032 , H01L2924/00012 , H01L2924/01022 , H01L2924/01026 , H01L2924/01083 , H01L2924/3512 , H01L2224/48744 , H01L2924/00015 , H01L2224/83205
摘要: A power semiconductor device having a semiconductor element die-mount-connected onto a lead frame in a leadless manner. Die-mount-connection between a semiconductor element (1) and a lead frame (2) that have large thermal expansion coefficient difference between them, wherein the connection is made by an intermetallic compound layer (200) having a melting point of at least 260aeC or by a leadless solder having a melting point of 260aeC through 400aeC, and thermal stress caused by a temperature cycle is buffered by a metal layer (100) having a melting point of at least 260aeC. The leadless die-mount-connection can be made without being melted at reflowing and without causing chip-crack under a thermal stress.
摘要翻译: 一种功率半导体器件,具有半导体元件,其以无引线方式管芯安装到引线框架上。 在半导体元件(1)和引线框架(2)之间的模具安装连接,它们之间具有大的热膨胀系数差,其中,连接是由熔点至少为260aeC的金属间化合物层(200)制成的 或通过熔点为260aeC至400aeC的无铅焊料,并且由温度循环引起的热应力由熔点至少为260ae℃的金属层(100)缓冲。 无引线模具安装连接可以在回流时不熔化而不会在热应力下引起芯片裂纹。
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8.
公开(公告)号:WO2015197281A1
公开(公告)日:2015-12-30
申请号:PCT/EP2015/061567
申请日:2015-05-26
CPC分类号: H01L24/83 , B22F1/0055 , B22F1/0062 , B22F1/02 , B22F7/04 , B22F2301/255 , B22F2302/45 , B23K1/0016 , B23K35/0244 , B23K35/025 , B23K35/24 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/3033 , B23K35/34 , B23K35/36 , B23K35/3602 , B23K35/3612 , B23K35/3615 , B23K35/3618 , B23K35/365 , B23K2201/40 , B23K2203/08 , H01L24/32 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29164 , H01L2224/29169 , H01L2924/12041 , H01L2924/13055 , H01L2924/14 , H01L2924/00
摘要: Metallzubereitung, die (A) 40 bis 20 bis 50 Gew.-% organisches Lösemittel umfasst.
摘要翻译: 含有(A)40至<80重量%的至少一种金属存在于具有含有至少一种有机化合物,和(B)的涂层的颗粒的形式的%> 20至50重量金属制备.-%有机 包括溶剂。
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公开(公告)号:WO2015115665A1
公开(公告)日:2015-08-06
申请号:PCT/JP2015/052999
申请日:2015-02-03
申请人: 国立大学法人大阪大学
CPC分类号: H01L24/16 , H01L23/367 , H01L23/3736 , H01L23/3737 , H01L23/42 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/04026 , H01L2224/05573 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/11848 , H01L2224/13294 , H01L2224/13339 , H01L2224/16057 , H01L2224/16227 , H01L2224/27848 , H01L2224/29118 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29164 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/81007 , H01L2224/8183 , H01L2224/8184 , H01L2224/83007 , H01L2224/83193 , H01L2224/8383 , H01L2224/8384 , H01L2224/83855 , H01L2224/83815 , H01L2924/00014
摘要: 本発明の接合構造体(100)は、基板(110)と、金属膜(120)と、半導体素子(130)とを備える。基板(110)、金属膜(120)、および、半導体素子(130)は、この順番に積層されている。前記金属膜(120)を構成する金属はストレスマイグレーションによって拡散したものであり、前記基板(110)と前記半導体素子(130)とが前記金属膜(120)を介して接合されている。
摘要翻译: 该接合结构(100)设置有基板(110),金属膜(120)和半导体元件(130)。 依次层叠基板(110),金属膜(120)和半导体元件(130)。 构成金属膜(120)的金属通过应力迁移而扩散,基板(110)和半导体元件(130)通过介于其间的金属膜(120)彼此接合。
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公开(公告)号:WO2015068853A1
公开(公告)日:2015-05-14
申请号:PCT/JP2014/079867
申请日:2014-11-11
CPC分类号: H01L24/32 , B22F7/08 , B22F2999/00 , B23K35/0244 , B23K35/025 , B23K35/28 , B23K35/30 , B23K35/3033 , C22C5/06 , C22C5/08 , C22C19/00 , C22C21/00 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/03436 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/04026 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/2741 , H01L2224/29083 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29155 , H01L2224/29294 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/2949 , H01L2224/29639 , H01L2224/29644 , H01L2224/32227 , H01L2224/32245 , H01L2224/45144 , H01L2224/83055 , H01L2224/83065 , H01L2224/83075 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8384 , H01L2224/85207 , H01L2924/10253 , H01L2924/10272 , H01L2924/15738 , H01L2924/15747 , H01L2924/351 , H01L2924/3512 , H01L2924/00015 , B22F1/0018 , H01L2924/00014 , H01L2924/01029 , H01L2924/01014 , H01L2924/0104 , H01L2924/01026 , H01L2924/01025 , H01L2924/01047 , H01L2924/01015 , H01L2924/01079 , H01L2924/0103 , H01L2924/0105 , H01L2924/00012
摘要: 本発明は、金属ナノ粒子を用いた同種または異種金属接合において、一方の被接合面金属がAl系の場合には,Niナノ粒子を含む接合層を介して接合することにより、良好な接合強度を有する接合構造体を得ることができる。さらに、金属ナノ粒子を含む2つの接合層(6,8)で金属箔(7)を挟むことで接合層を構成し、同種または異種の被接合面金属(3-4)を、この接合層を介して接合することにより、2つの被接合面金属を有する被接合体の熱膨張量差に起因するような熱応力を緩和することができる
摘要翻译: 本发明通过使用金属纳米粒子的相似或不同类型的金属粘合,通过粘结时,通过含有Ni纳米粒子的粘合层,当一个接合面金属为Al系时,可获得具有良好的接合强度的接合结构。 此外,通过将金属箔(7)夹在两个接合层(6,8)之间来构成接合层,可以减轻由具有两个接合面金属的接合部件的热膨胀量的差异引起的热应力, 并且通过接合层粘合类似或不同类型的接合表面金属(3-4)。
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