Abstract:
High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil is formed into a capacitor, where the copper layer is one electrode of the capacitor and the treated aluminum layer is in intimate contact with a dielectric layer of the capacitor.
Abstract:
A solder resist comprising a thermosetting resin is printed on a surface of an insulating board (7) having a conductor circuit (6). The solder resist is then heat-cured to form an insulating film (1) having a low thermal expansion coefficient. A laser beam (2) is then applied to the portion of the insulating film in which an opening is to be formed, to burn off the same portion for forming an opening (10), whereby the conductor circuit (6) is exposed. This opening may be formed as a hole for conduction by forming a metal plating film on an inner surface thereof. It is preferable that an external connecting pad be formed so as to cover the opening. The film of coating of a metal is formed by using an electric plating lead, which is preferably cut off by a laser beam after the electric plating has finished.
Abstract:
A semiconductor device in which a chip is embedded in a wiring board and bump electrodes formed over the front surface of the semiconductor chip are flip-chip coupled to wiring formed in the wiring board and the entire back surface of the semiconductor chip functions well as a back electrode and a method of manufacturing the semiconductor device. A semiconductor chip is embedded inside a wiring board. The semiconductor chip is flip-chip coupled (face down) to a base substrate as the core layer of the wiring board through bump electrodes. A conductive film is formed over the semiconductor chip's surface reverse to the surface over which bump electrodes are formed. The conductive film functions as a back electrode which supplies a reference voltage to the integrated circuit in the semiconductor chip. The conductive film is electrically coupled to third-layer wiring through vias.
Abstract:
A substrate structure and the fabrication method thereof are provided herein. The present invention utilizes a laminate as the support of the package process and then removes the laminate after the following package steps so as to obtain a quite smooth surface for using in the internal-plane structure of the circuit board and a stacking structure that can be applied to many different types of the chip package structures.
Abstract:
A manufacturing method of a circuit board is provided. A metal core is provided. A conductive layer is formed on each of some carriers. The carriers and dielectric layers are laminated at both sides of the metal core to form a stacked structure. Each of the dielectric layers is located between the corresponding carrier and the metal core, and a portion of the conductive layer is embedded in the corresponding dielectric layer. Then, the carriers are removed. A blind via and/or a through via are/is formed in the stacked structure to connect the corresponding conductive layer and the metal core and/or connect the conductive layers at both sides of the metal core, wherein the through via penetrates the metal core. The conductive layer on a surface of the dielectric layer is removed.
Abstract:
A circuit board structure embedded with semiconductor chips is proposed. A semiconductor chip is received in a cavity of a supporting board. A dielectric layer and a circuit layer are formed on the supporting board and the semiconductor chip. A plurality of hollow conductive vias are formed in the dielectric layer for electrically connecting the circuit layer to the semiconductor chip. By providing the hollow conductive vias of present invention, the separating results of different coefficients of expansion and thermal stress are prevented, and thus electrical function of products is ensured.
Abstract:
In a capacitor device of the present invention includes a substrate, a plurality of lower electrodes formed on the substrate, a plurality of dielectric films formed on a plurality of lower electrodes respectively in a state that the dielectric films are separated mutually, and upper electrodes formed on a plurality of dielectric films respectively, a plurality of capacitors each composed of the lower electrode, the dielectric film, and the upper electrode are arranged on the substrate respectively, and each of the dielectric films in a plurality of capacitors has a different film thickness.
Abstract:
There is provided a electronic parts packaging structure that includes a mounted body on which an electronic parts is mounted, the electronic parts having a connection pad, which has an etching stopper film (a copper film, a gold film, a silver film, or a conductive past film) as an uppermost film, and mounted on the mounted body to direct the connection pad upward, an interlayer insulating film for covering the electronic parts, a via hole formed in the insulating film on the connection pad of the electronic parts, and a wiring pattern connected to the connection pad via the via hole.
Abstract:
Disclosed is a method of manufacturing a printed circuit board having a landless via hole. Specifically, this invention provides a method of manufacturing a printed circuit board having a landless via hole without the upper land of a via hole using a photoresist (P-LPR) which is loaded in the via hole. Therefore, in this invention, since a circuit pattern is formed using only copper of a copper clad laminate, the width thereof is minimized, thus easily realizing a fine circuit pattern. Further, the landless via hole structure is applied, resulting in a highly dense circuit pattern.