公开(公告)号：US09598772B2

公开(公告)日：2017-03-21

申请号：US12761863

申请日：2010-04-16

Applicant: Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chung-Shi Liu

Inventor： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chung-Shi Liu

IPC: H01L23/498 ,  H01L21/3205 ,  C23C18/16 ,  H01L23/00 ,  H01L23/31

CPC classification number: C23C18/1605 ,  C23C18/165 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2924/0002 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method for fabricating bump structure without UBM undercut uses an electroless Cu plating process to selectively form a Cu UBM layer on a Ti UBM layer within an opening of a photoresist layer. After stripping the photoresist layer, there is no need to perform a wet etching process on the Cu UBM layer, and thereby the UBM structure has a non-undercut profile.

公开(公告)号：US09538582B2

公开(公告)日：2017-01-03

申请号：US13559318

申请日：2012-07-26

Applicant: Ming-Da Cheng ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Chien-Wei Lee ,  Chung-Shi Liu

Inventor： Ming-Da Cheng ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Chien-Wei Lee ,  Chung-Shi Liu

IPC: B23K31/02 ,  H01L21/00 ,  H05B3/02 ,  H01L21/677 ,  H01L21/683 ,  H01L23/00

CPC classification number: H05B3/02 ,  B23K3/087 ,  B23K2101/40 ,  H01L21/67721 ,  H01L21/6838 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/75744 ,  H01L2224/7598 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/3511 ,  H01L2924/37001 ,  Y10T29/41 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/014

Abstract: A method includes placing a first package component over a vacuum boat, wherein the vacuum boat comprises a hole, and wherein the first package component covers the hole. A second package component is placed over the first package component, wherein solder regions are disposed between the first and the second package components. The hole is vacuumed, wherein the first package component is pressed by a pressure against the vacuum boat, and wherein the pressure is generated by a vacuum in the hole. When the vacuum in the hole is maintained, the solder regions are reflowed to bond the second package component to the first package component.

Abstract translation: 一种方法包括将第一包装部件放置在真空舟皿上，其中真空舟皿包括孔，并且其中第一包装部件覆盖该孔。 第二包装部件放置在第一包装部件上，其中焊料区域设置在第一和第二包装部件之间。 该孔被抽真空，其中第一包装部件被压靠在真空舟皿上的压力，并且其中压力由孔中的真空产生。 当保持孔中的真空时，回流焊接区域以将第二包装部件结合到第一包装部件。

公开(公告)号：US09349663B2

公开(公告)日：2016-05-24

申请号：US13539136

申请日：2012-06-29

Applicant: Meng-Tse Chen ,  Yu-Chih Liu ,  Hui-Min Huang ,  Wei-Hung Lin ,  Jing Ruei Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

Inventor： Meng-Tse Chen ,  Yu-Chih Liu ,  Hui-Min Huang ,  Wei-Hung Lin ,  Jing Ruei Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L25/065

CPC classification number: H01L25/0652 ,  H01L21/561 ,  H01L21/563 ,  H01L23/00 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/562 ,  H01L24/17 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/15311

Abstract: A package on package structure providing mechanical strength and warpage control includes a first package component, a second package component, and a first set of conductive elements coupling the first package component to the second package component. A first polymer-comprising material is molded on the first package component and surrounds the first set of conductive elements. The first polymer-comprising material has an opening therein exposing a top surface of the second package component. A third package component and a second set of conductive elements couples the second package component to the third package component.

Abstract translation: 提供机械强度和翘曲控制的封装结构的封装包括第一封装元件，第二封装元件和将第一封装元件连接到第二封装元件的第一组导电元件。 第一含聚合物的材料被模制在第一包装部件上并包围第一组导电元件。 第一含聚合物的材料在其中具有露出第二包装部件的顶表面的开口。 第三包装部件和第二组导电元件将第二包装部件耦合到第三包装部件。

公开(公告)号：US09021682B2

公开(公告)日：2015-05-05

申请号：US13527459

申请日：2012-06-19

Applicant: Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

Inventor： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC: H01R43/052 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L24/13 ,  H01L24/78 ,  H01L2224/056 ,  H01L2224/1111 ,  H01L2224/1134 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/451 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48 ,  H01L2224/7855 ,  H01L2224/78621 ,  H01L2224/85051 ,  H01L2224/854 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/206 ,  Y10T29/49192 ,  Y10T29/49213 ,  Y10T29/514 ,  Y10T29/5177 ,  Y10T29/53217 ,  Y10T29/53235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01049 ,  H01L2224/4554

Abstract: An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

Abstract translation: 一种装置包括：线圈，其被配置为供应线，被配置为在所述线中形成切口的切割装置，以及被配置为结合所述线并形成柱形凸块的毛细管。 该设备还被配置为拉动线在凹口处断裂，尾部区域附接到柱形凸块。

公开(公告)号：US08975741B2

公开(公告)日：2015-03-10

申请号：US13275065

申请日：2011-10-17

Applicant: Chih-Wei Lin ,  Ming-Da Cheng ,  Meng-Tse Chen ,  Wen-Hsiung Lu ,  Kuei-Wei Huang ,  Chung-Shi Liu

Inventor： Chih-Wei Lin ,  Ming-Da Cheng ,  Meng-Tse Chen ,  Wen-Hsiung Lu ,  Kuei-Wei Huang ,  Chung-Shi Liu

IPC: H01L23/52 ,  H01L23/48 ,  H01L29/40 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L25/50 ,  H01L21/31051 ,  H01L21/31127 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76885 ,  H01L21/786 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02371 ,  H01L2224/02381 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/19 ,  H01L2224/27019 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/82005 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1047 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00

Abstract: A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

Abstract translation: 器件包括层间电介质，在层间电介质下的器件管芯; 以及在所述层间电介质和所述器件管芯之下的管芯附着膜，其中所述管芯附着膜附接到所述器件管芯。 多个再分配线包括与芯片附着膜水平的部分。 多个Z互连电子耦合到器件裸片和多个再分配线。 含聚合物的材料在层间电介质的下方。 器件管芯，管芯附着膜和多个Z形互连件设置在包含聚合物的材料中。

公开(公告)号：US08927391B2

公开(公告)日：2015-01-06

申请号：US13118108

申请日：2011-05-27

Applicant: Meng-Tse Chen ,  Wei-Hung Lin ,  Sheng-Yu Wu ,  Chun-Cheng Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Ming-Da Cheng ,  Chung-Shi Liu

Inventor： Meng-Tse Chen ,  Wei-Hung Lin ,  Sheng-Yu Wu ,  Chun-Cheng Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L21/30 ,  H01L21/56 ,  H01L25/00 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L24/17 ,  H01L21/565 ,  H01L21/566 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/81 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16055 ,  H01L2224/16113 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1304 ,  H01L2924/14 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/00

Abstract: A method of packaging includes placing a package component over a release film, wherein solder balls on a surface of the package component are in physical contact with the release film. Next, A molding compound filled between the release film and the package component is cured, wherein during the step of curing, the solder balls remain in physical contact with the release film.

Abstract translation: 包装方法包括将包装部件放置在脱模膜上，其中包装部件表面上的焊球与剥离膜物理接触。 接下来，填充在剥离膜和包装部件之间的模塑料固化，其中在固化步骤期间，焊球与剥离膜保持物理接触。

公开(公告)号：US08900922B2

公开(公告)日：2014-12-02

申请号：US13398568

申请日：2012-02-16

Applicant: Cheng-Chung Lin ,  Kuei-Wei Huang ,  Ai-Tee Ang ,  Tsai-Tsung Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu

Inventor： Cheng-Chung Lin ,  Kuei-Wei Huang ,  Ai-Tee Ang ,  Tsai-Tsung Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L25/07

CPC classification number: H01L21/565 ,  H01L21/486 ,  H01L23/145 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2924/0665 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A method includes laminating a Non-Conductive Film (NCF) over a first package component, and bonding a second package component on the first package component. The NCF and the second package component are on a same side of the first package component. Pillars of a mold tool are then forced into the NCF to form openings in the NCF. The connectors of the first package component are exposed through the openings.

Abstract translation: 一种方法包括在第一包装部件上层压非导电膜（NCF），以及将第二包装部件接合在第一包装部件上。 NCF和第二封装组件位于第一封装组件的同一侧。 然后将模具的支柱压入NCF中以在NCF中形成开口。 第一包装部件的连接器通过开口露出。

公开(公告)号：US08828861B2

公开(公告)日：2014-09-09

申请号：US12860347

申请日：2010-08-20

Applicant: Tuung Luoh ,  Ming Da Cheng ,  Chin-Ta Su ,  Tahone Yang ,  Kuang-Chao Chen

Inventor： Tuung Luoh ,  Ming Da Cheng ,  Chin-Ta Su ,  Tahone Yang ,  Kuang-Chao Chen

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76885 ,  H01L21/76852 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for fabricating conductive metal lines of a semiconductor device are described herein. In one embodiment, such a method may comprise depositing a conductive material over a substrate, and depositing a first barrier layer on the conductive layer. Such a method may also comprise patterning a mask on the first barrier layer, the pattern comprising a layout of the conductive lines. Such an exemplary method may also comprise etching the conductive material and the first barrier layer using the patterned mask to form the conductive lines. In addition, a low temperature post-flow may be performed on the structure. The method may also include depositing a dielectric material over and between the patterned conductive lines.

Abstract translation: 本文描述了制造半导体器件的导电金属线的方法。 在一个实施例中，这种方法可以包括在衬底上沉积导电材料，以及在导电层上沉积第一阻挡层。 这种方法还可以包括在第一阻挡层上图案化掩模，该图案包括导线的布局。 这种示例性方法还可以包括使用图案化掩模蚀刻导电材料和第一阻挡层以形成导电线。 此外，可以对结构进行低温后流。 该方法还可以包括在图案化导电线之上和之间沉积电介质材料。

公开(公告)号：US08735273B2

公开(公告)日：2014-05-27

申请号：US13179299

申请日：2011-07-08

Applicant: Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

Inventor： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC: H01L21/44

CPC classification number: H01L24/03 ,  H01L21/566 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/525 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/03903 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.

Abstract translation: 一种方法包括在覆盖半导体衬底的金属焊盘上形成钝化层。 在钝化层中形成第一开口，金属垫的一部分通过第一开口暴露。 种子层形成在钝化层之上并且电耦合到金属焊盘。 种子层还包括钝化层上的部分。 在种子层上形成第一掩模，其中第一掩模具有直接在金属焊盘的至少一部分上的第二开口。 在种子层和第二开口中形成PPI。 在第一掩模上形成第二掩模，第二掩模形成在第二掩模中。 金属凸块的一部分形成在第三开口中。 在形成金属凸块的部分的步骤之后，去除第一和第二掩模。

公开(公告)号：US08674496B2

公开(公告)日：2014-03-18

申请号：US13399437

申请日：2012-02-17

Applicant: Cheng-Chung Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Chun-Cheng Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

Inventor： Cheng-Chung Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Chun-Cheng Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L25/07

CPC classification number: H01L24/14 ,  H01L23/49816 ,  H01L23/5389 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00

Abstract: A fine pitch package-on-package (PoP), and a method of forming, are provided. The PoP may be formed by placing connections, e.g., solder balls, on a first substrate having a semiconductor die attached thereto. A first reflow process is performed to elongate the solder balls. Thereafter, a second substrate having another semiconductor die attached thereto is connected to the solder balls. A second reflow process is performed to form an hourglass connection.

Abstract translation: 提供了一种精细节距封装（PoP）和一种形成方法。 PoP可以通过将连接例如焊球放置在具有附接到其上的半导体管芯的第一基板上而形成。 执行第一回流处理以延长焊球。 此后，具有安装有另一个半导体管芯的第二基板连接到焊球。 执行第二回流处理以形成沙漏连接。