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公开(公告)号：US08703546B2
公开(公告)日：2014-04-22
申请号：US12784314
申请日：2010-05-20
申请人： Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
发明人： Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
IPC分类号： H01L21/82 , H01L21/288
CPC分类号： H01L21/288 , C25D7/123 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03831 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/1181 , H01L2224/11901 , H01L2224/1308 , H01L2224/13083 , H01L2224/13118 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/93 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
摘要： A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.
摘要翻译： 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。
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32.发明授权公开(公告)号：US08569897B2
公开(公告)日：2013-10-29
申请号：US12786818
申请日：2010-05-25
申请人： Chung-Shi Liu , Chien Ling Hwang , Ming-Che Ho
发明人： Chung-Shi Liu , Chien Ling Hwang , Ming-Che Ho
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1357 , H01L2224/13611 , H01L2224/16507 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2224/13099 , H01L2924/01083 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.
摘要翻译： 在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。
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公开(公告)号：US08227334B2
公开(公告)日：2012-07-24
申请号：US12843760
申请日：2010-07-26
申请人： Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
发明人： Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
IPC分类号： H01L21/00
CPC分类号： H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要： A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
摘要翻译： 形成器件的方法包括提供衬底，以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。
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公开(公告)号：US20110287628A1
公开(公告)日：2011-11-24
申请号：US12784314
申请日：2010-05-20
申请人： Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
发明人： Chih-Wei Lin , Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu
IPC分类号： H01L21/445
CPC分类号： H01L21/288 , C25D7/123 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03831 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/1181 , H01L2224/11901 , H01L2224/1308 , H01L2224/13083 , H01L2224/13118 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/93 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
摘要： A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.
摘要翻译： 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。
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公开(公告)号：US09117772B2
公开(公告)日：2015-08-25
申请号：US13527422
申请日：2012-06-19
申请人： Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
发明人： Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
IPC分类号： H01L21/44 , H01L23/31 , H01L25/10 , H01L25/00 , H01L25/065 , H01L21/56 , H01L23/498 , H01L23/00
CPC分类号： H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
摘要： A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.
摘要翻译： 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电连接器与第二电连接器对准，金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。
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公开(公告)号：US08937388B2
公开(公告)日：2015-01-20
申请号：US13492285
申请日：2012-06-08
申请人： Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
发明人： Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
IPC分类号： H01L23/52
CPC分类号： H01L24/06 , H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05551 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/06051 , H01L2224/10145 , H01L2224/11334 , H01L2224/13021 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/01322 , H01L2924/01023 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要： Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.
摘要翻译： 公开了用于半导体器件的晶片级封装（WLP）的方法和装置。 电路的接触焊盘可以通过后钝化互连（PPI）线和PPI焊盘连接到焊料凸块。 PPI垫可以包括中空部分和开口。 PPI垫可以与PPI线一起形成为一体。 PPI垫的中空部分可用于控制球安装过程中使用的焊剂量，以便任何额外量的焊剂可以从PPI焊盘的固体部分的开口逸出。 焊锡球可以直接安装到PPI焊盘，而不使用正常的WLP封装所需的任何下凸块金属（UBM）。
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公开(公告)号：US08659155B2
公开(公告)日：2014-02-25
申请号：US12846353
申请日：2010-07-29
申请人： Ming-Da Cheng , Wen-Hsiung Lu , Chih-Wei Lin , Ching-Wen Chen , Yi-Wen Wu , Chia-Tung Chang , Ming-Che Ho , Chung-Shi Liu
发明人： Ming-Da Cheng , Wen-Hsiung Lu , Chih-Wei Lin , Ching-Wen Chen , Yi-Wen Wu , Chia-Tung Chang , Ming-Che Ho , Chung-Shi Liu
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/10145 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/11827 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16507 , H01L2224/81191 , H01L2224/81815 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/3651 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/05 , H01L2924/00012 , H01L2924/01083 , H01L2924/00 , H01L2224/05552
摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.
摘要翻译： 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。
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公开(公告)号：US20130334692A1
公开(公告)日：2013-12-19
申请号：US13527422
申请日：2012-06-19
申请人： Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
发明人： Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
IPC分类号： B23K31/02 , H01L23/488
CPC分类号： H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
摘要： A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.
摘要翻译： 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电连接器与第二电连接器对准，金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。
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公开(公告)号：US20130328190A1
公开(公告)日：2013-12-12
申请号：US13492285
申请日：2012-06-08
申请人： Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
发明人： Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/06 , H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05551 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/06051 , H01L2224/10145 , H01L2224/11334 , H01L2224/13021 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/01322 , H01L2924/01023 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要： Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.
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公开(公告)号：US20130175685A1
公开(公告)日：2013-07-11
申请号：US13344446
申请日：2012-01-05
申请人： Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
发明人： Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
IPC分类号： H01L21/768 , H01L23/485
CPC分类号： H01L23/485 , H01L21/768 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02166 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/13017 , H01L2224/13022 , H01L2224/13023 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2924/014
摘要： A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.
摘要翻译： 一种方法包括在金属垫上形成聚合物层，在聚合物层中形成开口以暴露金属垫的一部分，并形成凸点下冶金（UBM）。 UBM包括延伸到开口中以电耦合到金属垫的部分。
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