公开(公告)号：US20080146010A1

公开(公告)日：2008-06-19

申请号：US11619350

申请日：2007-01-03

申请人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

发明人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

IPC分类号： H01L21/28

CPC分类号： H01L24/84 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/3754 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/8382 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor component (1) has a semiconductor chip (5) and a semiconductor component carrier (3) with external connection strips (12, 13, 15). The semiconductor chip (5) has a first electrode (6) and a control electrode (7) on its top side (8) and a second electrode (9) on its rear side (10). The semiconductor chip (5) is fixed by its top side (8) in flip-chip arrangement (11) on a first and a second external connection strip (12, 13) for the first electrode (6) and the control electrode (7). The second electrode (9) is electrically connected to at least one third external connection strip (15) via a bonding tape (14).

摘要翻译： 半导体部件（1）具有半导体芯片（5）和具有外部连接条（12,13,15）的半导体部件载体（3）。 半导体芯片（5）在其顶侧（8）上具有第一电极（6）和控制电极（7），在其后侧具有第二电极（9）。 半导体芯片（5）在第一和第二外部连接条（12,13）上用倒装芯片布置（11）的顶侧（8）固定，用于第一电极（6）和控制电极（7） ）。 第二电极（9）经由粘合带（14）电连接到至少一个第三外部连接条（15）。

公开(公告)号：US20070228556A1

公开(公告)日：2007-10-04

申请号：US11694516

申请日：2007-03-30

申请人： Khalil Hosseini ,  Alexander Koenigsberger

发明人： Khalil Hosseini ,  Alexander Koenigsberger

IPC分类号： H01L23/48

CPC分类号： H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/48 ,  H01L2224/0603 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor component includes at least one power semiconductor chip and surface-mountable external contacts. The power semiconductor chip includes large-area contact areas on its top side and its rear side, which cover essentially the entire top side and rear side, respectively. The top side also includes, alongside the large-area contact area, a small-area contact area; the areal extent of the small-area contact is at least ten times smaller than the areal extent of the large-area contact areas. The small-area contact area is connected to an individual external contact of the power semiconductor component via a bonding wire connection. The large-area contact area of the top side is connected to external contacts via a bonding tape.

摘要翻译： 功率半导体部件包括至少一个功率半导体芯片和可表面安装的外部触点。 功率半导体芯片在其顶侧和后侧分别包括大面积的接触区域，其基本上覆盖整个顶侧和后侧。 顶部还包括与大面积接触区域一起的小面积接触面积; 小面积接触面积的面积比大面积接触面积的面积至少要小十倍。 小区域接触区域通过接合线连接连接到功率半导体部件的单个外部接触。 上侧的大面积接触区域通过粘接带与外部触点相连。

公开(公告)号：US20060118815A1

公开(公告)日：2006-06-08

申请号：US11235474

申请日：2005-09-26

申请人： Ralf Otremba ,  Khalil Hosseini

发明人： Ralf Otremba ,  Khalil Hosseini

IPC分类号： H01L31/111

CPC分类号： H01L23/49562 ,  H01L23/4952 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/37599 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2224/37099

摘要： A power semiconductor device is disclosed. In one embodiment, the power semiconductor device includes a plurality of device components that are contact-connected by bonding wires having different thicknesses. The surface of at least one bonding wire serves as a contact area for at least one further bonding wire, the bonding wire that serves as contact area being thicker than the bonding wire contact-connected thereon.

公开(公告)号：US20050048758A1

公开(公告)日：2005-03-03

申请号：US10927621

申请日：2004-08-27

申请人： Khalil Hosseini ,  Edmund Riedl

发明人： Khalil Hosseini ,  Edmund Riedl

IPC分类号： B23K1/00 ,  B23K1/20 ,  B23K35/02 ,  B23K35/14 ,  B23K35/26 ,  B23K35/30 ,  H01L21/60 ,  H01L21/44

CPC分类号： H01L24/29 ,  B23K1/0016 ,  B23K1/20 ,  B23K35/025 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29299 ,  H01L2224/29387 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/2929

摘要： A diffusion solder position between two parts has intermetallic phases formed by two solder components. Nanoparticles of a filler material are three-dimensionally distributed in its diffusion region in addition to the intermetallic phases. Furthermore, a process for producing the diffusion solder position and for producing an electronic power component, which has a plurality of diffusion solder positions, is provided.

摘要翻译： 两个部件之间的扩散焊料位置由两个焊料部件形成金属间相。 填充材料的纳米颗粒除了金属间相以外还在其扩散区域中三维分布。 此外，提供了具有多个扩散焊料位置的用于制造扩散焊料位置和用于制造电子功率部件的工艺。

公开(公告)号：US08723299B2

公开(公告)日：2014-05-13

申请号：US12790998

申请日：2010-06-01

申请人： Khalil Hosseini

发明人： Khalil Hosseini

IPC分类号： H01L23/495

CPC分类号： H01L21/561 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/495 ,  H01L23/4951 ,  H01L24/06 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/131 ,  H01L2224/16245 ,  H01L2224/27464 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15747 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method and system for forming a thin semiconductor device are disclosed. In one embodiment, a lead frame is provided over a carrier. At least one semiconductor chip is provided on the lead frame and the at least one semiconductor chip is enclosed with an encapsulating material. The thickness of the at least one semiconductor chip and the encapsulating material are reduced. At least one through connection is formed in the encapsulating material and at least one electrical contact element is formed over the at least one semiconductor chip and the at least one through connection.

摘要翻译： 公开了一种用于形成薄半导体器件的方法和系统。 在一个实施例中，引线框架设置在载体上。 至少一个半导体芯片设置在引线框架上，并且至少一个半导体芯片被封装材料包围。 至少一个半导体芯片和封装材料的厚度减小。 在封装材料中形成至少一个贯通连接，并且至少一个电接触元件形成在至少一个半导体芯片和至少一个贯穿连接上。

公开(公告)号：US07851927B2

公开(公告)日：2010-12-14

申请号：US11619350

申请日：2007-01-03

申请人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

发明人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

IPC分类号： H01L21/28

CPC分类号： H01L24/84 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/3754 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/8382 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor component (1) has a semiconductor chip (5) and a semiconductor component carrier (3) with external connection strips (12, 13, 15). The semiconductor chip (5) has a first electrode (6) and a control electrode (7) on its top side (8) and a second electrode (9) on its rear side (10). The semiconductor chip (5) is fixed by its top side (8) in flip-chip arrangement (11) on a first and a second external connection strip (12, 13) for the first electrode (6) and the control electrode (7). The second electrode (9) is electrically connected to at least one third external connection strip (15) via a bonding tape (14).

摘要翻译： 半导体部件（1）具有半导体芯片（5）和具有外部连接条（12,13,15）的半导体部件载体（3）。 半导体芯片（5）在其顶侧（8）上具有第一电极（6）和控制电极（7），在其后侧具有第二电极（9）。 半导体芯片（5）在第一和第二外部连接条（12,13）上用倒装芯片布置（11）的顶侧（8）固定，用于第一电极（6）和控制电极（7） ）。 第二电极（9）通过粘合带（14）电连接到至少一个第三外部连接条（15）。

公开(公告)号：US20080073792A1

公开(公告)日：2008-03-27

申请号：US11859438

申请日：2007-09-21

申请人： Khalil Hosseini ,  Matthias Stecher

发明人： Khalil Hosseini ,  Matthias Stecher

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L21/60

CPC分类号： H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/00012 ,  H01L2924/01006

摘要： An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

摘要翻译： 公开了一种用于生产的电子设备和方法。 一个实施例提供了一种集成部件，其具有由铜或铜合金构成的第一层或者包含铜或铜合金的第一层，并且具有导电的第二层，其材料与第一层的材料不同， 设置在第一层和第二层上。

公开(公告)号：US20070040252A1

公开(公告)日：2007-02-22

申请号：US11504783

申请日：2006-08-16

申请人： Khalil Hosseini

发明人： Khalil Hosseini

IPC分类号： H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40091 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85207 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor power component using flat conductor technology includes a vertical current path through a semiconductor power chip. The semiconductor power chip includes at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a flat conductor chip island of a flat conductor leadframe and the top side electrode is electrically connected to an internal flat conductor of the flat conductor leadframe via a connecting element. The connecting element includes a bonding strip extending from the top side electrode to the internal flat conductor and further includes, on the top side of the bonding strip, bonding wires extending from the top side electrode to the internal flat conductor.

摘要翻译： 使用扁平导体技术的半导体功率元件包括通过半导体功率芯片的垂直电流路径。 半导体功率芯片在其顶侧包括至少一个大面积电极和在其后侧的大面积电极。 后侧电极表面安装在平面导体引线框架的扁平导体芯片岛上，并且顶侧电极经由连接元件电连接到扁平导体引线框架的内部扁平导体。 连接元件包括从顶侧电极延伸到内部扁平导体的接合条，并且在接合条的顶侧还包括从顶侧电极延伸到内部扁平导体的接合线。

公开(公告)号：US20050150932A1

公开(公告)日：2005-07-14

申请号：US10504246

申请日：2003-02-05

申请人： Khalil Hosseini

发明人： Khalil Hosseini

IPC分类号： B23K20/00 ,  B23K20/10 ,  B23K26/20 ,  B23K31/02

CPC分类号： H01L24/85 ,  B23K20/004 ,  B23K20/10 ,  B23K26/20 ,  B23K2101/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05655 ,  H01L2224/32245 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48655 ,  H01L2224/48755 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85099 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2224/85455 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/2075

摘要： The invention relates to a wire-bonding process and to a process for producing a bonded joint. A bonding location is heated by means of a laser beam originating from a laser, the arrangement comprising an ultrasonic wedge-wedge bonding unit with a bonding needle, a copper or aluminum bonding wire guide, and a copper or aluminum wire for an ultrasonic wedge-wedge bonding process, and at least one of the bonding locations having a hard-metal coating.

摘要翻译： 本发明涉及一种引线接合方法和一种用于制造接合接头的方法。 通过源自激光器的激光束加热接合位置，该装置包括具有接合针的超声波楔形楔形结合单元，铜或铝接合线引导件，以及用于超声波楔形的铜或铝线， 楔形粘合工艺，并且至少一个粘合位置具有硬金属涂层。

公开(公告)号：US09275973B2

公开(公告)日：2016-03-01

申请号：US13282927

申请日：2011-10-27

申请人： Khalil Hosseini ,  Frank Kahlmann

发明人： Khalil Hosseini ,  Frank Kahlmann

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L29/40 ,  H01L23/552

摘要： An embodiment electronic device comprises a semiconductor chip including a first main face, a second main face and side faces each connecting the first main face to the second main face. A metal layer is disposed above the second main face and the side faces, the metal layer including a porous structure.