公开(公告)号：US20120235227A1

公开(公告)日：2012-09-20

申请号：US13049098

申请日：2011-03-16

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Roveendra Paul

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Roveendra Paul

IPC分类号： H01L29/78

CPC分类号： H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L29/04 ,  H01L29/7811 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2924/00013 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A semiconductor device includes a vertical power semiconductor chip including a semiconductor layer. A first terminal is at a first side of the semiconductor layer and a second terminal is at a second side of the semiconductor layer opposite the first side along a first direction. A drift zone is within the semiconductor layer between the first terminal and the second terminal. The drift zone has, in a central part, a compressive stress of at least 100 MPa along a second direction perpendicular to the first direction. The central part extends from 40% to 60% of an overall extension of the drift zone along the first direction and into a depth of the semiconductor layer of at least 10 μm with respect to at least one of the first side and the second side of the semiconductor layer.

摘要翻译： 半导体器件包括具有半导体层的垂直功率半导体芯片。 第一端子位于半导体层的第一侧，并且第二端子沿着第一方向位于与第一侧相对的半导体层的第二侧。 漂移区位于第一端子和第二端子之间的半导体层内。 漂移区在中心部分沿垂直于第一方向的第二方向具有至少100MPa的压缩应力。 中心部分从沿着第一方向的漂移区的整体延伸的40％延伸到60％，并且相对于第一侧和第二侧中的至少一个相对于半导体层的深度至少为10μm 半导体层。

公开(公告)号：US08461645B2

公开(公告)日：2013-06-11

申请号：US13049098

申请日：2011-03-16

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Roveendra Paul

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Roveendra Paul

IPC分类号： H01L29/78

CPC分类号： H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L29/04 ,  H01L29/7811 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2924/00013 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A semiconductor device includes a vertical power semiconductor chip including a semiconductor layer. A first terminal is at a first side of the semiconductor layer and a second terminal is at a second side of the semiconductor layer opposite the first side along a first direction. A drift zone is within the semiconductor layer between the first terminal and the second terminal. The drift zone has, in a central part, a compressive stress of at least 100 MPa along a second direction perpendicular to the first direction. The central part extends from 40% to 60% of an overall extension of the drift zone along the first direction and into a depth of the semiconductor layer of at least 10 μm with respect to at least one of the first side and the second side of the semiconductor layer.

摘要翻译： 半导体器件包括具有半导体层的垂直功率半导体芯片。 第一端子位于半导体层的第一侧，第二端子沿着第一方向位于与第一侧相对的半导体层的第二侧。 漂移区位于第一端子和第二端子之间的半导体层内。 漂移区在中心部分沿垂直于第一方向的第二方向具有至少100MPa的压缩应力。 中心部分从沿着第一方向的漂移区的整体延伸的40％延伸至60％，并且相对于第一侧和第二侧的至少一个延伸至至少10um的半导体层的深度 半导体层。

公开(公告)号：US09786584B2

公开(公告)日：2017-10-10

申请号：US13602597

申请日：2012-09-04

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H05K7/00 ,  H01L23/495 ,  H05K1/18 ,  H01L23/31 ,  H01L23/373 ,  H01L23/467 ,  H05K1/02

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/467 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1301 ,  H01L2924/181 ,  H05K1/0209 ,  H05K1/0256 ,  H05K1/181 ,  H05K2201/2072 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Representative implementations of devices and techniques provide isolation between a carrier and a component mounted to the carrier. A multi-layer device having lateral elements provides electrical isolation at a preset isolation voltage while maintaining a preselected thermal conductivity between the component and the carrier.

公开(公告)号：US09147628B2

公开(公告)日：2015-09-29

申请号：US13535052

申请日：2012-06-27

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L21/60 ,  H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L23/3135 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L24/83 ,  H01L24/85 ,  H01L24/96 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05684 ,  H01L2224/211 ,  H01L2224/24011 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/2518 ,  H01L2224/27318 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/40095 ,  H01L2224/40105 ,  H01L2224/40227 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45499 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/48476 ,  H01L2224/48499 ,  H01L2224/48611 ,  H01L2224/48618 ,  H01L2224/48624 ,  H01L2224/48638 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48684 ,  H01L2224/48711 ,  H01L2224/48718 ,  H01L2224/48724 ,  H01L2224/48738 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48784 ,  H01L2224/48811 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48838 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48884 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85815 ,  H01L2224/92136 ,  H01L2224/92137 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/01044 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0498 ,  H01L2924/0496 ,  H01L2924/0474 ,  H01L2924/0475 ,  H01L2924/0478 ,  H01L2924/0476 ,  H01L2924/0454 ,  H01L2924/0455 ,  H01L2924/0458 ,  H01L2924/0456 ,  H01L2924/00012 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/0105 ,  H01L2924/0509 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/0103 ,  H01L2924/01078 ,  H01L2924/0665 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2224/83205

摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a leadframe having a plurality of leads and a die paddle and a semiconductor module attached to the die paddle of the leadframe. The semiconductor module includes a first semiconductor chip disposed in a first encapsulant. The semiconductor module has a plurality of contact pads coupled to the first semiconductor chip. The semiconductor device further includes a plurality of interconnects coupling the plurality of contact pads with the plurality of leads, and a second encapsulant disposed at the semiconductor module and the leadframe.

摘要翻译： 根据本发明的实施例，半导体器件包括具有多个引线和管芯焊盘的引线框架和连接到引线框架的管芯焊盘的半导体模块。 半导体模块包括设置在第一密封剂中的第一半导体芯片。 半导体模块具有耦合到第一半导体芯片的多个接触焊盘。 半导体器件还包括将多个接触焊盘与多个引线耦合的多个互连以及设置在半导体模块和引线框架处的第二密封剂。

公开(公告)号：US08896106B2

公开(公告)日：2014-11-25

申请号：US13544834

申请日：2012-07-09

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L29/76

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L29/2003 ,  H01L29/78 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85207 ,  H01L2224/85801 ,  H01L2224/8585 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012

摘要： In accordance with an embodiment of the present invention, a semiconductor package includes a first lead frame having a first die paddle, and a second lead frame, which has a second die paddle and a plurality of leads. The second die paddle is disposed over the first die paddle. A semiconductor chip is disposed over the second die paddle. The semiconductor chip has a plurality of contact regions on a first side facing the second lead frame. The plurality of contact regions is coupled to the plurality of leads.

摘要翻译： 根据本发明的实施例，半导体封装包括具有第一管芯焊盘的第一引线框架和具有第二管芯焊盘和多个引线的第二引线框架。 第二模板设置在第一模板上。 半导体芯片设置在第二裸片上。 半导体芯片在面向第二引线框架的第一面上具有多个接触区域。 多个接触区域耦合到多个引线。

公开(公告)号：US20140001615A1

公开(公告)日：2014-01-02

申请号：US13535052

申请日：2012-06-27

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/3135 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L24/83 ,  H01L24/85 ,  H01L24/96 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05684 ,  H01L2224/211 ,  H01L2224/24011 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/2518 ,  H01L2224/27318 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/40095 ,  H01L2224/40105 ,  H01L2224/40227 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45499 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/48476 ,  H01L2224/48499 ,  H01L2224/48611 ,  H01L2224/48618 ,  H01L2224/48624 ,  H01L2224/48638 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48684 ,  H01L2224/48711 ,  H01L2224/48718 ,  H01L2224/48724 ,  H01L2224/48738 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48784 ,  H01L2224/48811 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48838 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48884 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85815 ,  H01L2224/92136 ,  H01L2224/92137 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/01044 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0498 ,  H01L2924/0496 ,  H01L2924/0474 ,  H01L2924/0475 ,  H01L2924/0478 ,  H01L2924/0476 ,  H01L2924/0454 ,  H01L2924/0455 ,  H01L2924/0458 ,  H01L2924/0456 ,  H01L2924/00012 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/0105 ,  H01L2924/0509 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/0103 ,  H01L2924/01078 ,  H01L2924/0665 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2224/83205

摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a leadframe having a plurality of leads and a die paddle and a semiconductor module attached to the die paddle of the leadframe. The semiconductor module includes a first semiconductor chip disposed in a first encapsulant. The semiconductor module has a plurality of contact pads coupled to the first semiconductor chip. The semiconductor device further includes a plurality of interconnects coupling the plurality of contact pads with the plurality of leads, and a second encapsulant disposed at the semiconductor module and the leadframe.

摘要翻译： 根据本发明的实施例，半导体器件包括具有多个引线和管芯焊盘的引线框架和连接到引线框架的管芯焊盘的半导体模块。 半导体模块包括设置在第一密封剂中的第一半导体芯片。 半导体模块具有耦合到第一半导体芯片的多个接触焊盘。 半导体器件还包括将多个接触焊盘与多个引线耦合的多个互连以及设置在半导体模块和引线框架处的第二密封剂。

公开(公告)号：US08610274B2

公开(公告)日：2013-12-17

申请号：US12881257

申请日：2010-09-14

申请人： Khalil Hosseini ,  Frank Kahlmann ,  Josef Hoeglauer ,  Ralf Otremba ,  Georg Meyer-Berg

发明人： Khalil Hosseini ,  Frank Kahlmann ,  Josef Hoeglauer ,  Ralf Otremba ,  Georg Meyer-Berg

IPC分类号： H01L23/48

CPC分类号： H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48458 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48847 ,  H01L2224/85 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A die structure includes a die and a metallization layer disposed over the front side of the die. The metallization layer includes copper. At least a part of the metallization layer has a rough surface profile. The part with the rough surface profile includes a wire bonding region, to which a wire bonding structure is to be bonded.

摘要翻译： 模具结构包括模具和设置在模具的前侧上的金属化层。 金属化层包括铜。 金属化层的至少一部分具有粗糙的表面轮廓。 具有粗糙表面轮廓的部分包括引线接合区域，引线接合结构将被接合到该引线接合区域。

公开(公告)号：US20130062722A1

公开(公告)日：2013-03-14

申请号：US13611007

申请日：2012-09-12

申请人： Josef Hoeglauer ,  Ralf Otremba ,  Xaver Schloegel

发明人： Josef Hoeglauer ,  Ralf Otremba ,  Xaver Schloegel

IPC分类号： H01L23/495 ,  H01L21/60 ,  H01L37/00

CPC分类号： H01L23/49575 ,  H01L23/34 ,  H01L23/495 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L37/00 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29386 ,  H01L2224/32245 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/07025

摘要： In various embodiments, a chip module may include a first chip; and a leadframe with a first leadframe area and a second leadframe area, wherein the first leadframe area is electrically insulated from the second leadframe area; wherein the first chip is arranged at least partially on the first leadframe area and at least partially on the second leadframe area.

摘要翻译： 在各种实施例中，芯片模块可以包括第一芯片; 以及具有第一引线框区域和第二引线框区域的引线框架，其中所述第一引线框区域与所述第二引线框区域电绝缘; 其中所述第一芯片至少部分地布置在所述第一引线框区域上并且至少部分地布置在所述第二引线框区域上。

公开(公告)号：US07528010B2

公开(公告)日：2009-05-05

申请号：US11778887

申请日：2007-07-17

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Matthias Stecher

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Matthias Stecher

IPC分类号： H01L21/00

CPC分类号： H01L23/552 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/29 ,  H01L23/3185 ,  H01L24/05 ,  H01L24/13 ,  H01L24/73 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor component of semiconductor chip size includes a semiconductor chip. The semiconductor chip has a metallic coating that completely covers the edge sides and the rear side and partly covers the top side, on which surface-mountable external contacts are arranged. One aspect includes power semiconductor components, wherein the metallic coating connects a rear side electrode to one of the surface-mountable external contacts on the top side of a power semiconductor chip.

摘要翻译： 半导体芯片尺寸的半导体部件包括半导体芯片。 半导体芯片具有完全覆盖边缘侧和后侧的金属涂层，并且部分地覆盖顶面，其上布置有表面可安装的外部触点。 一个方面包括功率半导体部件，其中金属涂层将后侧电极连接到功率半导体芯片的顶侧上的可表面安装的外部触头之一。

公开(公告)号：US20090026601A1

公开(公告)日：2009-01-29

申请号：US11828858

申请日：2007-07-26

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Klaus Schiess

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L23/3107 ,  H01L21/561 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68359 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/76155 ,  H01L2224/82005 ,  H01L2224/82102 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor module is disclosed. One embodiment provides a first semiconductor chip having a first contact pad on a first main surface and a second contact pad on a second main surface, a first electrically conductive layer applied to the first main surface, a second electrically conductive layer applied to the second main surface, and an electrically insulating material covering the first electrically conductive layer, wherein a surface of the second electrically conductive layer forms an external contact pad and the second electrically conductive layer has a thickness of less than 200 μm.

摘要翻译： 公开了一种半导体模块。 一个实施例提供了第一半导体芯片，其具有在第一主表面上的第一接触焊盘和在第二主表面上的第二接触焊盘，施加到第一主表面的第一导电层，施加到第二主表面的第二导电层 表面和覆盖第一导电层的电绝缘材料，其中第二导电层的表面形成外部接触焊盘，第二导电层的厚度小于200μm。