公开(公告)号：US09728527B2

公开(公告)日：2017-08-08

申请号：US14925807

申请日：2015-10-28

申请人： Invensas Corporation

发明人： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC分类号： H01L23/48 ,  H01L25/00 ,  H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L25/065 ,  H01L21/311 ,  H01L21/56 ,  H01L21/768

CPC分类号： H01L25/50 ,  H01L21/31111 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/5384 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/24 ,  H01L24/32 ,  H01L24/33 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L24/89 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02311 ,  H01L2224/02317 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0331 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/08146 ,  H01L2224/0823 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/13616 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14134 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/24147 ,  H01L2224/24227 ,  H01L2224/244 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4805 ,  H01L2224/48108 ,  H01L2224/48149 ,  H01L2224/4903 ,  H01L2224/49426 ,  H01L2224/73201 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/386 ,  H01L2924/00 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/01028 ,  H01L2924/01082 ,  H01L2224/05 ,  H01L2224/13 ,  H01L2224/16225 ,  H01L2224/81 ,  H01L2224/45616 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2224/45099

摘要： An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

公开(公告)号：US09728526B2

公开(公告)日：2017-08-08

申请号：US13904770

申请日：2013-05-29

申请人： SANDISK TECHNOLOGIES LLC

发明人： Eugene Jinglun Tam

IPC分类号： H01L25/18 ,  G11C5/06

CPC分类号： H01L25/18 ,  G11C5/06 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562

摘要： A topology for memory circuits of a non-volatile memory system reduces capacitive loading. For a given channel, a single memory chip can be connected to the controller, but is in turn connected to multiple other memory devices that fan out in a tree-like structure, which can also fan back in to a single memory device. In addition to the usual circuitry, such as a memory arrays and associated peripheral circuitry, the memory chip also includes a flip-flop circuit and can function in several modes. The modes include a pass-through mode, where the main portions of the memory circuit are inactive and commands and data are passed through to other devices in the tree structure, and an active mode, where the main portions of the memory circuit are active and can receive and supply data. Reverse active and reverse pass-through modes, where data flows in the other direction, can also be used. The pads of the memory chip can be configurable to swap input and output pads to more efficiently form the memory chips into a package.

公开(公告)号：US20170200702A1

公开(公告)日：2017-07-13

申请号：US15404093

申请日：2017-01-11

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chih-Pin HUNG ,  Ying-Te OU ,  Pao-Nan LEE

IPC分类号： H01L25/065 ,  H01L23/528 ,  H01L23/31 ,  H01L23/522

CPC分类号： H01L25/0657 ,  H01L23/3121 ,  H01L23/5226 ,  H01L23/528 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： In one or more embodiments, a semiconductor device includes a substrate, a first dielectric layer and a first conductive layer. The substrate includes a first surface and a second surface opposite the first surface. The first dielectric layer is on the first surface of the substrate. The first conductive layer is on the first surface of the substrate and includes a first portion on the first dielectric layer and a second portion surrounded by the first dielectric layer. The second portion of the first conductive layer extends from the first portion of the first conductive layer through the first dielectric layer to contact the first surface of the substrate.

公开(公告)号：US09704828B2

公开(公告)日：2017-07-11

申请号：US14786295

申请日：2014-10-16

申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.

发明人： Kosuke Ikeda ,  Yuji Morinaga ,  Osamu Matsuzaki

IPC分类号： H01L23/36 ,  H01L23/367 ,  H01L23/495 ,  H01L25/065 ,  H01L23/00 ,  H01L23/373 ,  H01L23/492 ,  H01L23/498 ,  H01L25/07

CPC分类号： H01L25/0657 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/49531 ,  H01L23/49833 ,  H01L24/37 ,  H01L24/40 ,  H01L25/065 ,  H01L25/074 ,  H01L2224/32135 ,  H01L2224/32141 ,  H01L2224/32145 ,  H01L2224/32151 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/00014

摘要： A semiconductor module according to one embodiment of the present invention includes: a first circuit board having thermal conductivity; a second circuit board having thermal conductivity and disposed opposing the first circuit board; a first semiconductor element joined to an opposing surface of the first circuit board opposing the second circuit board; a second semiconductor element joined to an opposing surface of the second circuit board opposing the first circuit board; and a connector electrically connecting the first semiconductor element and the second semiconductor element. The connector includes a portion which is sandwiched between the first semiconductor element and the second circuit board without through the second semiconductor element, and which is in contact with the first semiconductor element and the second circuit board.

公开(公告)号：US20170186801A1

公开(公告)日：2017-06-29

申请号：US15461001

申请日：2017-03-16

申请人： Invensas Corporation

发明人： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC分类号： H01L27/146

CPC分类号： H01L27/14634 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/09 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/09181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/143 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a microelectronic package, a first wire bond wire is coupled to an upper surface of a substrate. A first bond mass is coupled to another end of the first wire bond wire. A second wire bond wire is coupled to the upper surface. A second bond mass is coupled to another end of the second wire bond wire. The first and second wire bond wires laterally jut out horizontally away from the upper surface of the substrate for at least a distance of approximately 2 to 3 times a diameter of both the first wire bond wire and the second wire bond wire. The first wire bond wire and the second wire bond wire are horizontal for the distance with respect to being co-planar with the upper surface within +/−10 degrees.

公开(公告)号：US20170179101A1

公开(公告)日：2017-06-22

申请号：US15446930

申请日：2017-03-01

申请人： SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD. ,  SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

发明人： Junrong Yan ,  Peng Lu ,  Weili Wang ,  Li Wang ,  Pradeep Rai ,  Jeff Xue ,  Zhong Lu

IPC分类号： H01L25/00 ,  H01L23/544 ,  H01L25/065 ,  H01L21/304 ,  H01L23/13 ,  H01L21/78

CPC分类号： H01L25/50 ,  H01L21/3043 ,  H01L21/78 ,  H01L23/13 ,  H01L23/147 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/05554 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/49176 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1438 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. A bridge structure is also mounted to the substrate, with the semiconductor die fitting within a trench formed in a bottom surface of the bridge structure. The bridge structure may be formed from a semiconductor wafer into either a dummy bridge structure functioning as a mechanical spacer layer, or an IC bridge structure functioning as both a mechanical spacer layer and an integrated circuit semiconductor die. Memory die may also be mounted atop the bridge structure.

公开(公告)号：US20170170149A1

公开(公告)日：2017-06-15

申请号：US15431649

申请日：2017-02-13

申请人： Micron Technology, Inc.

发明人： Seng Kim Ye ,  Hong Wan Ng

IPC分类号： H01L25/065 ,  G06F13/16 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L25/0657 ,  G06F13/1668 ,  G06F13/1694 ,  H01L22/14 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/04 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/03 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/13083 ,  H01L2224/1319 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/2939 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81855 ,  H01L2224/81856 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83874 ,  H01L2224/92227 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/143 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1443 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/83101 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/83

摘要： Semiconductor devices with controllers under stacks of semiconductor packages and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate, a controller attached to the package substrate, and at least two semiconductor packages disposed over the controller. Each semiconductor package includes a plurality of semiconductor dies. The semiconductor device further includes an encapsulant material encapsulating the controller and the at least two semiconductor packages.

公开(公告)号：US09679853B2

公开(公告)日：2017-06-13

申请号：US13963598

申请日：2013-08-09

申请人： Jong-joo Lee

发明人： Jong-joo Lee

IPC分类号： H05K7/00 ,  H01L23/538 ,  H01L23/498 ,  H01L25/10 ,  H01L23/00

CPC分类号： H01L23/538 ,  H01L23/49816 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19105 ,  H01L2924/00

摘要： A package-on-package (PoP)-type package includes a first semiconductor package having a first passive element and a first semiconductor device mounted on a first substrate, and a second semiconductor package having a second semiconductor device mounted on a second substrate. The first passive element is electrically connected to the second semiconductor device. Related devices are also discussed.

公开(公告)号：US09673178B2

公开(公告)日：2017-06-06

申请号：US14970558

申请日：2015-12-16

申请人： Powertech Technology Inc.

发明人： Chia-Hsiang Yuan ,  Chia-Wei Chang ,  Kuo-Ting Lin ,  Yong-Cheng Chuang

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L24/03 ,  H01L24/06 ,  H01L24/20 ,  H01L24/45 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/06505 ,  H01L2224/12105 ,  H01L2224/214 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92224 ,  H01L2225/06506 ,  H01L2225/06562 ,  H01L2225/1035 ,  H01L2225/1058

摘要： Provided is a package structure including a substrate, N dies, N first pads, N vertical wires, and a second pad. The N dies are stacked alternatively on the substrate, so as to form a multi-die stack structure. The N dies include, from bottom to top, first to Nth dies, wherein N is an integer greater than 1. The first die is a bottom die, and the Nth die is a top die. The first pads are disposed on an active surface of the dies respectively. The vertical wires are disposed on the first pads respectively. The second pad is disposed on the top die.

公开(公告)号：US20170125378A1

公开(公告)日：2017-05-04

申请号：US15404090

申请日：2017-01-11

申请人： Samsung Electronics Co., Ltd.

发明人： Chul PARK ,  Kilsoo KIM ,  In LEE

IPC分类号： H01L25/065 ,  H01L23/00

CPC分类号： H01L25/0652 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48147 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06558 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

摘要： A semiconductor package comprises a package substrate; a first chip stack and a second chip stack mounted side by side on the package substrate, wherein the first and second chip stacks each include a plurality of semiconductor chips stacked on the package substrate, wherein each of the semiconductor chips includes a plurality of bonding pads provided on a respective edge region thereof, wherein at least some of the plurality of bonding pads are functional pads, and wherein the functional pads occupy a region that is substantially less than an entirety of the respective edge region.