公开(公告)号：US20120091574A1

公开(公告)日：2012-04-19

申请号：US12904506

申请日：2010-10-14

申请人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Meng-Wei CHOU ,  Hung-Jui KUO ,  Chung-Shi LIU

发明人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Meng-Wei CHOU ,  Hung-Jui KUO ,  Chung-Shi LIU

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0341 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01028 ,  H01L2924/01044 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/00 ,  H01L2224/05552

摘要： The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.

摘要翻译： 本发明涉及半导体器件的凸块结构。 半导体器件的示例性结构包括衬底; 衬底上的接触垫; 钝化层，其在所述衬底上延伸，在所述接触焊盘上具有开口; 以及在所述钝化层的开口上的导电柱，其中所述导电柱包括基本上垂直于所述衬底的表面的上部和具有锥形侧壁的下部。

公开(公告)号：US20120043654A1

公开(公告)日：2012-02-23

申请号：US12859379

申请日：2010-08-19

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Chung-Shi LIU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L21/2885 ,  C25D5/022 ,  C25D5/10 ,  C25D17/12 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/742 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration.

摘要翻译： 通过使用图案化阳极描述的制备凸块结构的机理可以简化凸块制造工艺，降低制造成本，并且改善晶片内和晶片之间的厚度均匀性。 此外，上述机构允许形成具有不同高度的凸块，以允许凸块与不同高度的基板上的元件一体化。 具有不同高度的冲击扩大了铜柱凸起的应用，以实现进一步的芯片集成。

公开(公告)号：US20110254151A1

公开(公告)日：2011-10-20

申请号：US12761863

申请日：2010-04-16

申请人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Chung-Shi LIU

发明人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/3205

CPC分类号： C23C18/1605 ,  C23C18/165 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2924/0002 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for fabricating bump structure without UBM undercut uses an electroless Cu plating process to selectively form a Cu UBM layer on a Ti UBM layer within an opening of a photoresist layer. After stripping the photoresist layer, there is no need to perform a wet etching process on the Cu UBM layer, and thereby the UBM structure has a non-undercut profile.

摘要翻译： 用于制造没有UBM底切的凸块结构的方法使用无电镀铜工艺在光致抗蚀剂层的开口内的Ti UBM层上选择性地形成Cu UBM层。 在剥离光致抗蚀剂层之后，不需要对Cu UBM层进行湿蚀刻处理，从而UBM结构具有非底切轮廓。

公开(公告)号：US20110062580A1

公开(公告)日：2011-03-17

申请号：US12786818

申请日：2010-05-25

申请人： Chung-Shi LIU ,  Chien Ling HWANG ,  Ming-Che HO

发明人： Chung-Shi LIU ,  Chien Ling HWANG ,  Ming-Che HO

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.

摘要翻译： 在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。

公开(公告)号：US20130099371A1

公开(公告)日：2013-04-25

申请号：US13278621

申请日：2011-10-21

申请人： Ming-Da CHENG ,  Kuei-Wei HUANG ,  Yu-Peng TSAI ,  Cheng-Ting CHEN ,  Hsiu-Jen LIN ,  Chung-Shi LIU

发明人： Ming-Da CHENG ,  Kuei-Wei HUANG ,  Yu-Peng TSAI ,  Cheng-Ting CHEN ,  Hsiu-Jen LIN ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor package includes a workpiece with a conductive trace and a chip with a conductive pillar. The chip is attached to the workpiece and a solder joint region is formed between the conductive pillar and the conductive trace. The silver (Ag) content in the solder layer is between 0.5 and 1.8 weight percent.

摘要翻译： 半导体封装包括具有导电迹线的工件和具有导电柱的芯片。 芯片附着在工件上，并且在导电柱和导电迹线之间形成焊点区域。 焊料层中的银（Ag）含量为0.5-1.8重量％。

公开(公告)号：US20130093076A1

公开(公告)日：2013-04-18

申请号：US13272434

申请日：2011-10-13

申请人： Wei-Hung LIN ,  Ming-Da CHENG ,  Chung-Shi LIU ,  Mirng-Ji LII ,  Chen-Hua YU

发明人： Wei-Hung LIN ,  Ming-Da CHENG ,  Chung-Shi LIU ,  Mirng-Ji LII ,  Chen-Hua YU

IPC分类号： H01L23/498 ,  B23K1/20

CPC分类号： H01L23/49894 ,  H01L21/4864 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05647 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81022 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01051 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method of a semiconductor package includes providing a substrate having a conductive trace coated with an organic solderability preservative (OSP) layer, removing the OSP layer from the conductive trace, and then coupling a chip to the substrate to form a semiconductor package.

摘要翻译： 半导体封装的方法包括提供具有涂覆有有机可焊性防腐剂（OSP）层的导电迹线的衬底，从导电迹线去除OSP层，然后将芯片耦合到衬底以形成半导体封装。

公开(公告)号：US20130260535A1

公开(公告)日：2013-10-03

申请号：US13476340

申请日：2012-05-21

申请人： Meng-Tse CHEN ,  Hui-Min HUANG ,  Chun-Cheng LIN ,  Chih-Chun CHIU ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Meng-Tse CHEN ,  Hui-Min HUANG ,  Chun-Cheng LIN ,  Chih-Chun CHIU ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/78 ,  B29C53/16

CPC分类号： B29C53/18 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L23/295 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75315 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00

摘要： Embodiments of mechanisms for flattening a packaged structure are provided. The mechanisms involve a flattening apparatus and the utilization of protection layer(s) between the packaged structure and the surface(s) of the flattening apparatus. The protection layer(s) is made of a soft and non-sticking material to allow protecting exposed fragile elements of the packaged structure and easy separation after processing. The embodiments of flattening process involve flattening the warped packaged structure by pressure under elevated processing temperature. Processing under elevated temperature allows the package structure to be flattened within a reasonable processing time.

摘要翻译： 提供了用于使封装结构平坦化的机构的实施例。 这些机构涉及压平装置以及在封装结构和平坦化装置的表面之间利用保护层。 保护层由柔软和不粘的材料制成，以保护封装结构的暴露的易碎元件并且在加工之后易于分离。 扁平化过程的实施例涉及在升高的加工温度下通过压力使翘曲的包装结构变平。 在高温下进行处理可使包装结构在合理的处理时间内变平。

公开(公告)号：US20130187269A1

公开(公告)日：2013-07-25

申请号：US13427787

申请日：2012-03-22

申请人： Hung-Jen LIN ,  Tsung-Ding WANG ,  Chien-Hsiun LEE ,  Wen-Hsiung LU ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Hung-Jen LIN ,  Tsung-Ding WANG ,  Chien-Hsiun LEE ,  Wen-Hsiung LU ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L21/565 ,  H01L21/566 ,  H01L21/768 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0347 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/21 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00

摘要： A package assembly including a semiconductor die electrically coupled to a substrate by an interconnected joint structure. The semiconductor die includes a bump overlying a semiconductor substrate, and a molding compound layer overlying the semiconductor substrate and being in physical contact with a first portion of the bump. The substrate includes a no-flow underfill layer on a conductive region. A second portion of the bump is in physical contact with the no-flow underfill layer to form the interconnected joint structure.

摘要翻译： 一种包装组件，其包括通过互连的接合结构电耦合到衬底的半导体管芯。 半导体管芯包括覆盖半导体衬底的凸块和覆盖半导体衬底并与凸点的第一部分物理接触的模塑复合层。 衬底包括导电区域上的无流动底部填充层。 凸块的第二部分与无流动底部填充层物理接触以形成互连的连接结构。

公开(公告)号：US20110260317A1

公开(公告)日：2011-10-27

申请号：US12765250

申请日：2010-04-22

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Jacky CHANG ,  Chung-Shi LIU ,  Chen-Hua YU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Jacky CHANG ,  Chung-Shi LIU ,  Chen-Hua YU

IPC分类号： H01L23/50 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13455 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

摘要翻译： 铜柱凸起具有由电解金属层形成的侧壁保护层。 电解金属层是电解镍层，电解金层，电解铜层或电解银层。

公开(公告)号：US20130309621A1

公开(公告)日：2013-11-21

申请号：US13475790

申请日：2012-05-18

申请人： Hui-Min HUANG ,  Chih-Wei LIN ,  Wen-Hsiung LU ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Hui-Min HUANG ,  Chih-Wei LIN ,  Wen-Hsiung LU ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/687 ,  F27D19/00 ,  F27D5/00

CPC分类号： H01L21/67288 ,  H01L21/6838

摘要： A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

摘要翻译： 一种用于调整晶片翘曲的方法，包括提供具有中心部分和边缘部分的晶片，并提供其上具有用于保持晶片的保持区域的保持台。 将晶片放置在保持台上，其中心部分高​​于边缘部分，然后按压到保持区域上，使得晶片通过自吸力被吸引并保持在保持台上。 根据晶片的翘曲量将晶片在预定温度下加热预定时间，以便实现基本上平坦的晶片或预定的晶片级。