摘要:
In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.
摘要:
Provided is a wiring structure for display device which does not generate hillocks even when exposed to high temperatures at levels around 450 to 600° C., has excellent high-temperature heat resistance, keeps electrical resistance (wiring resistance) of the entire wiring structure low, and further has excellent resistance to hydrofluoric acid. This wiring structure for a display device comprises a structure in which are laminated, in order from the substrate side, a first layer of an Al alloy that contains at least one chemical element selected from the group (group X) consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr, and Pt and contains at least one rare earth element, and a second layer of an Al alloy nitride, or a nitride of at least one chemical element selected from the group Y consisted of Ti, Mo, Al, Ta, Nb, Re, Zr, W, V, Hf, and Cr.
摘要:
Embodiments pin connections, electronic devices, and methods are shown that include pin configurations to reduce voids and pin tilting and other concerns during pin attach operations, such as attachment to a chip package pin grid array. Pin head are shown that include features such as convex surfaces, a number of legs, and channels in pin head surfaces.
摘要:
A thin film transistor array panel includes: a substrate including a display area and a drive region in which a driving chip for transmitting a driving signal to the pixels is located; a gate line in the display area; a storage electrode line; a gate driving pad coupled to the driving chip; a gate insulating layer; a first semiconductor layer on the gate insulating layer and overlapped with a gate electrode protruding from the gate line; a second semiconductor layer formed on the gate insulating layer and overlapped with a sustain electrode protruding from the storage electrode line; a data line crossing the gate line in an insulated manner and a drain electrode separated from the data line; and a pixel electrode coupled to the drain electrode, and the drain electrode comprises a drain bar facing the source electrode, and a drain extender overlapped with the second semiconductor layer.
摘要:
A heat sink includes a plurality of layers being disposed substantially parallel with a surface of a heat source. The layers include a plurality of pin portions spaced apart from each other in a planar arrangement wherein the pin portions of the layers are stacked and bonded to form pin fins extending in a transverse direction relative to the heat source to sink heat. A compliant layer is disposed between the pin fins and a mechanical load. The compliant layer provides compliance such that the pin fins accommodate dimensional differences when interfacing with the heat source.
摘要:
A backside method for fabricating a semiconductor component with a conductive interconnect includes the step of providing a semiconductor substrate having a circuit side, a backside, and a substrate contact on the circuit side. The method also includes the steps of forming a substrate opening from the backside to the substrate contact, and then bonding the conductive interconnect to an inner surface of the substrate contact.
摘要:
A system for fabricating semiconductor components includes a semiconductor substrate, a thinning system for thinning the semiconductor substrate, an etching system for forming the substrate opening, and a bonding system for bonding the conductive interconnect to the substrate contact. The semiconductor component can be used to form module components, underfilled components, stacked components, and image sensor semiconductor components.
摘要:
A wiring board comprising a substrate having applied on the same side surface thereof one or more terminals for connecting a semiconductor element and one or more terminals for external connection, in which the terminals for connecting the semiconductor element and the terminals for external connection are electrically connected, by a wire, with each other in the interior of the wiring board, and a semiconductor device comprising the wiring board having packaged thereon semiconductor elements. Processes for the production of the wiring board and the semiconductor device are also disclosed.
摘要:
A component for mounting semiconductor chips or other microelectronic units includes a flexible top sheet with an array of terminals on it, and with flexible leads extending downwardly from the terminals. A compliant dielectric support layer surrounds the leads, holding the lead tips in precise locations. The leads are desirably formed from wire such as gold wire, and have eutectic bonding alloy on their tips. The component can be laminated to a chip or other unit under heat and pressure to form a complete subassembly with no need for individual bonding to the contacts of the chip. The subassembly can be tested readily and provides compensation for thermal expansion.
摘要:
This semiconductor device has two leads (3) lying in the same axis, a prefabricated plastic can (1) which is filled with a plastic compound and has one of the leads passed through its bottom (1a), and a prefabricated die (4) attached between those sides of the inner ends (60, 70) of the leads (3) facing each other, the leads being inserted into, and having an offset within, the can. The manufacture of the leads starts with a wire (30) which unwinds from a spool (39), passes through a major part of the manufacturing stages unseparated, and is separated into the individual semiconductor devices only after the mounting of the cans (1).