Abstract:
A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
Abstract:
The invention relates to an ultrasonic transducer (1) comprising a long horn (2), a counterpart (3), two piezoelectric drives (4, 5), and a screw (6). The counterpart is fixed to the horn by means of the screw and clamps the piezoelectric drives arranged on both sides of a longitudinal axis (7) of the ultrasonic transducer, between the horn and the counterpart. The ultrasonic transducer is designed such that the tip of a capillary mounted in the horn can oscillate in two different directions.
Abstract:
In one embodiment, a meta-module having circuitry for two or more modules is formed on a substrate, which is preferably a laminated substrate. The circuitry for the different modules is initially formed on the single meta- module. Each module will have one or more component areas in which the circuitry is formed. A metallic structure is formed on or in the substrate for each component area to be shielded. A single body, such as an overmold body, is then formed over all of the modules on the meta-module. At least a portion of the metallic structure for each component area to be shielded is then exposed through the body by a cutting, drilling, or like operation. Next, an electromagnetic shield material is applied to the exterior surface of the body of each of the component areas to be shielded and in contact with the exposed portion of the metallic structures.
Abstract:
A method of joining contacts on two chips (4706, 4708), each having multiple contacts (4702, 4704), to each other involves maintaining a first of the chips at a first temperature, the first of the chips having a rigid electrical contact (4704) thereon, bringing a second chip, having an electrical contact (4702) that is malleable with respect to the rigid contact and matingly corresponding thereto, into contact with the first such that the corresponding rigid and malleable contact are brought together, locally raising the second of the chips to a local temperatur that is sufficiently high to cause material of the rigid and malleable contact to interdiffuse, interpenetrate or both, but below both a temperature that would cause the material to become liquidus and a fuse temperature, and allowing the second of the chips to cool to at least the first temperature.
Abstract:
Ein Ultraschall Transducer (1) umfasst ein längliches Horn (2), ein Gegenstück (3), zwei piezoelektrische Antriebe (4, 5) und eine Schraube (6). Das Gegenstück ist mittels der Schraube am Horn befestigt und klemmt dabei die beidseitig einer Längsachse (7) des Ultraschall Transducers angeordneten piezoelektrischen Antriebe zwischen dem Horn und dem Gegenstück ein. Der Ultraschall Transducer ist so konzipiert, dass die Spitze einer im Horn eingespannten Kapillarein zwei verschiedenen Richtungen schwingen kann.
Abstract:
Microfeature workpieces having interconnects and conductive backplanes and associated systems and methods are disclosed herein. One such device includes a semiconductor substrate having integrated circuitry and terminals electrically coupled to the integrated circuitry. The device also includes electrically conductive interconnects extending through at least a portion of the semiconductor substrate and electrically coupled to corresponding terminals. The device further includes a conductive backplane assembly having a conductive layer at a back side of the semiconductor substrate. One or more of the interconnects are electrically coupled to the conductive layer at the back side of the semiconductor substrate.
Abstract:
A bonding wire for semiconductor device that attains improvement to ball part formability and junction easiness, excelling in loop controllability, and that enhances bonding strength at wedge junction, ensuring industrial production applicability, and that is composed mainly of copper cheaper than gold wire. There is provided a bonding wire for semiconductor device, comprising a core material composed mainly of copper and, superimposed thereon, a skin layer of conductive metal whose composition is different from that of the core material, characterized in that the skin layer is composed mainly of at least two members selected from among gold, palladium, platinum, rhodium, silver and nickel, and that in the skin layer, there is a region with a gradient of concentration of one or both of major component metal and copper in the direction of wire diameter.
Abstract:
A printed wiring board is provided with a base material, which has at least one wiring and is composed of an adhesive insulating base material and a conductive layer formed on one plane of the insulating base material; a penetrating electrode which is connected to the conductive layer, penetrates the insulating base material and is composed of a conductive paste; and an IC chip having a rewiring section. An IC chip is embedded in an interlayer adhesive material of the base material having the wiring, by connecting the rewiring section with the penetrating electrode. A supporting substrate is arranged on a plane opposite to the rewiring section of the IC chip through the adhesive layer, and the rewiring section and the base material having the wiring constitute a rewiring layer. Therefore, the multilayer printed wiring board having fine components mounted thereon is provided by simple process without increasing the cost and deteriorating the yield.