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公开(公告)号：US20170248590A1
公开(公告)日：2017-08-31
申请号：US15097899
申请日：2016-04-13
发明人： Yu-Lin Wang , Chen-Pin Hsu , Pei-Chi Chen
IPC分类号： G01N33/543 , H01L23/00 , H01L23/29 , H01L23/498 , H01L21/56 , H01L21/48
CPC分类号： H01L24/32 , G01D11/245 , H01L21/4846 , H01L21/565 , H01L23/3107 , H01L2224/32225 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01042 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/0496 , H01L2924/0509 , H01L2924/06 , H01L2924/0635 , H01L2924/0665 , H01L2924/10253 , H01L2924/1033 , H01L2924/10344 , H01L2924/1082 , H01L2924/1203 , H01L2924/1304 , H01L2924/1306 , H01L2924/13061 , H01L2924/13064 , H01L2924/146 , H01L2924/1461 , H01L2924/15747 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106
摘要： Provided is a manufacturing method of a sensor including the following steps. A mold having a cavity is provided. At least one chip is disposed in the cavity. The chip has an active surface and a back surface opposite to each other. The active surface faces toward a bottom surface of the cavity. A polymer material is filled in the cavity to cover the back surface of the chip. A heat treatment is performed, such that the polymer material is solidified to form a polymer substrate. A mold release treatment is performed to isolate the polymer substrate from the cavity. A plurality of conductive lines are formed on a first surface of the polymer substrate. The conductive lines are electrically connected with the chip.
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12.发明公开公开(公告)号：US20240250047A1
公开(公告)日：2024-07-25
申请号：US18598167
申请日：2024-03-07
发明人： TENG-YEN HUANG
IPC分类号： H01L23/00 , H01L25/065
CPC分类号： H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L24/02 , H01L2224/02372 , H01L2224/03001 , H01L2224/03011 , H01L2224/03452 , H01L2224/0361 , H01L2224/03622 , H01L2224/05018 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05193 , H01L2224/05546 , H01L2224/05559 , H01L2224/05647 , H01L2224/05657 , H01L2224/05676 , H01L2224/0568 , H01L2224/05684 , H01L2224/0603 , H01L2224/06051 , H01L2224/06181 , H01L2224/06517 , H01L2224/08145 , H01L2224/08146 , H01L2224/80379 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/0504 , H01L2924/0509 , H01L2924/0544 , H01L2924/059 , H01L2924/30105
摘要： The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%. The first semiconductor structure includes a plurality of first composite conductive features, wherein at least one of the plurality of first composite conductive features includes a first protection liner, a first graphene liner in the first protection liner and a first core conductor in the first graphene liner.
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公开(公告)号：US09922928B2
公开(公告)日：2018-03-20
申请号：US15217983
申请日：2016-07-23
发明人： Takashi Tonegawa
IPC分类号： H01L23/528 , H01L21/31 , H01L21/44 , H01L21/311 , H01L23/00 , H01L21/3105 , H01L23/482 , H01L23/522 , H01L23/48 , H01L23/31 , H01L23/532
CPC分类号： H01L23/5283 , H01L21/31 , H01L21/31056 , H01L21/311 , H01L21/31116 , H01L21/44 , H01L23/3171 , H01L23/481 , H01L23/4827 , H01L23/522 , H01L23/528 , H01L23/53223 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/84 , H01L24/85 , H01L29/1095 , H01L29/417 , H01L29/66348 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L2224/02126 , H01L2224/02145 , H01L2224/0215 , H01L2224/02206 , H01L2224/02215 , H01L2224/031 , H01L2224/0345 , H01L2224/03464 , H01L2224/03522 , H01L2224/04034 , H01L2224/04042 , H01L2224/05007 , H01L2224/05017 , H01L2224/05023 , H01L2224/05025 , H01L2224/05027 , H01L2224/05083 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05558 , H01L2224/05562 , H01L2224/05568 , H01L2224/05582 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/29339 , H01L2224/32245 , H01L2224/37147 , H01L2224/45147 , H01L2224/48247 , H01L2224/48463 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/8385 , H01L2224/84801 , H01L2224/85045 , H01L2224/85181 , H01L2224/85203 , H01L2924/05042 , H01L2924/0509 , H01L2924/05442 , H01L2924/07025 , H01L2924/1203 , H01L2924/1206 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/35121 , H01L2924/00014 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/00013 , H01L2924/059 , H01L2924/0103 , H01L2924/00
摘要： Properties of a semiconductor device are improved. A semiconductor device is configured so as to have a protective film provided over an interconnection and having an opening, and a plating film provided in the opening. A slit is provided in a side face of the opening, and the plating film is also disposed in the slit. Thus, the slit is provided in the side face of the opening, and the plating film is also grown in the slit. This results in a long penetration path of a plating solution during subsequent formation of the plating film. Hence, a corroded portion is less likely to be formed in the interconnection (pad region). Even if the corroded portion is formed, a portion of the slit is corroded prior to the interconnection (pad region) at a sacrifice, making it possible to suppress expansion of the corroded portion into the interconnection (pad region).
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公开(公告)号：US09640509B1
公开(公告)日：2017-05-02
申请号：US15280524
申请日：2016-09-29
发明人： Chih-Chao Yang
IPC分类号： H01L23/00
CPC分类号： H01L24/26 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/27 , H01L24/32 , H01L24/80 , H01L24/94 , H01L25/50 , H01L2224/0341 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0361 , H01L2224/03616 , H01L2224/039 , H01L2224/04 , H01L2224/05026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05157 , H01L2224/05166 , H01L2224/05176 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05557 , H01L2224/05571 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05657 , H01L2224/05673 , H01L2224/05676 , H01L2224/05681 , H01L2224/05684 , H01L2224/08145 , H01L2224/08147 , H01L2224/08148 , H01L2224/80075 , H01L2224/80201 , H01L2224/80365 , H01L2224/80385 , H01L2224/80895 , H01L2224/80948 , H01L2224/94 , H01L2224/08 , H01L2224/80 , H01L2924/00014 , H01L2924/00012 , H01L2924/04953 , H01L2924/01022 , H01L2924/0498 , H01L2924/01044 , H01L2924/01073 , H01L2924/0509 , H01L2924/0496 , H01L2924/01074
摘要： A first semiconductor structure having a first metallic structure that has a convex outermost surface and a second semiconductor structure having a second metallic structure that has a concave outermost surface are first provided. The first and second metallic structures are provided utilizing liner systems that have an opposite galvanic reaction to the metal or metal alloy that constitutes the first and second metallic structures such that during a planarization process the metal liners have a different removal rate than the metal or metal alloy that constitutes the first and second metallic structures. The first semiconductor structure and the second semiconductor structure are then bonded together such that the convex outermost surface of the first metallic structure is in direct contact with the concave outermost surface of the second metallic structure.
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公开(公告)号：US20170092605A1
公开(公告)日：2017-03-30
申请号：US15217983
申请日：2016-07-23
发明人： Takashi TONEGAWA
IPC分类号： H01L23/00
CPC分类号： H01L23/5283 , H01L21/31 , H01L21/31056 , H01L21/311 , H01L21/31116 , H01L21/44 , H01L23/3171 , H01L23/481 , H01L23/4827 , H01L23/522 , H01L23/528 , H01L23/53223 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/84 , H01L24/85 , H01L29/1095 , H01L29/417 , H01L29/66348 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L2224/02126 , H01L2224/02145 , H01L2224/0215 , H01L2224/02206 , H01L2224/02215 , H01L2224/031 , H01L2224/0345 , H01L2224/03464 , H01L2224/03522 , H01L2224/04034 , H01L2224/04042 , H01L2224/05007 , H01L2224/05017 , H01L2224/05023 , H01L2224/05025 , H01L2224/05027 , H01L2224/05083 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05558 , H01L2224/05562 , H01L2224/05568 , H01L2224/05582 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/29339 , H01L2224/32245 , H01L2224/37147 , H01L2224/45147 , H01L2224/48247 , H01L2224/48463 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/8385 , H01L2224/84801 , H01L2224/85045 , H01L2224/85181 , H01L2224/85203 , H01L2924/05042 , H01L2924/0509 , H01L2924/05442 , H01L2924/07025 , H01L2924/1203 , H01L2924/1206 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/35121 , H01L2924/00014 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/00013 , H01L2924/059 , H01L2924/0103 , H01L2924/00
摘要： Properties of a semiconductor device are improved. A semiconductor device is configured so as to have a protective film provided over an interconnection and having an opening, and a plating film provided in the opening. A slit is provided in a side face of the opening, and the plating film is also disposed in the slit. Thus, the slit is provided in the side face of the opening, and the plating film is also grown in the slit. This results in a long penetration path of a plating solution during subsequent formation of the plating film. Hence, a corroded portion is less likely to be formed in the interconnection (pad region). Even if the corroded portion is formed, a portion of the slit is corroded prior to the interconnection (pad region) at a sacrifice, making it possible to suppress expansion of the corroded portion into the interconnection (pad region).
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公开(公告)号：US09147628B2
公开(公告)日：2015-09-29
申请号：US13535052
申请日：2012-06-27
IPC分类号： H01L23/495 , H01L21/60 , H01L23/31 , H01L23/538 , H01L21/56 , H01L23/00
CPC分类号： H01L23/3135 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49575 , H01L23/5389 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/83 , H01L24/85 , H01L24/96 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/04105 , H01L2224/05184 , H01L2224/05187 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05684 , H01L2224/211 , H01L2224/24011 , H01L2224/24137 , H01L2224/245 , H01L2224/2518 , H01L2224/27318 , H01L2224/291 , H01L2224/29116 , H01L2224/2919 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/40095 , H01L2224/40105 , H01L2224/40227 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45499 , H01L2224/48091 , H01L2224/48105 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48472 , H01L2224/48476 , H01L2224/48499 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48638 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48684 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48738 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48784 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48838 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48884 , H01L2224/73263 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82106 , H01L2224/83815 , H01L2224/8385 , H01L2224/83851 , H01L2224/83862 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85815 , H01L2224/92136 , H01L2224/92137 , H01L2224/92247 , H01L2924/00011 , H01L2924/01322 , H01L2924/014 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/01022 , H01L2924/01073 , H01L2924/01044 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/0498 , H01L2924/0496 , H01L2924/0474 , H01L2924/0475 , H01L2924/0478 , H01L2924/0476 , H01L2924/0454 , H01L2924/0455 , H01L2924/0458 , H01L2924/0456 , H01L2924/00012 , H01L2924/01013 , H01L2924/01047 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01028 , H01L2924/01042 , H01L2924/01015 , H01L2924/0105 , H01L2924/0509 , H01L2924/01006 , H01L2924/01014 , H01L2924/0103 , H01L2924/01078 , H01L2924/0665 , H01L2924/01082 , H01L2924/01049 , H01L2924/01083 , H01L2924/00 , H01L2924/20759 , H01L2924/2076 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2224/83205
摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a leadframe having a plurality of leads and a die paddle and a semiconductor module attached to the die paddle of the leadframe. The semiconductor module includes a first semiconductor chip disposed in a first encapsulant. The semiconductor module has a plurality of contact pads coupled to the first semiconductor chip. The semiconductor device further includes a plurality of interconnects coupling the plurality of contact pads with the plurality of leads, and a second encapsulant disposed at the semiconductor module and the leadframe.
摘要翻译： 根据本发明的实施例，半导体器件包括具有多个引线和管芯焊盘的引线框架和连接到引线框架的管芯焊盘的半导体模块。 半导体模块包括设置在第一密封剂中的第一半导体芯片。 半导体模块具有耦合到第一半导体芯片的多个接触焊盘。 半导体器件还包括将多个接触焊盘与多个引线耦合的多个互连以及设置在半导体模块和引线框架处的第二密封剂。
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公开(公告)号：US20140001615A1
公开(公告)日：2014-01-02
申请号：US13535052
申请日：2012-06-27
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L23/3135 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49575 , H01L23/5389 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/83 , H01L24/85 , H01L24/96 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/04105 , H01L2224/05184 , H01L2224/05187 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05684 , H01L2224/211 , H01L2224/24011 , H01L2224/24137 , H01L2224/245 , H01L2224/2518 , H01L2224/27318 , H01L2224/291 , H01L2224/29116 , H01L2224/2919 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/40095 , H01L2224/40105 , H01L2224/40227 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45499 , H01L2224/48091 , H01L2224/48105 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48472 , H01L2224/48476 , H01L2224/48499 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48638 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48684 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48738 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48784 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48838 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48884 , H01L2224/73263 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82106 , H01L2224/83815 , H01L2224/8385 , H01L2224/83851 , H01L2224/83862 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85815 , H01L2224/92136 , H01L2224/92137 , H01L2224/92247 , H01L2924/00011 , H01L2924/01322 , H01L2924/014 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/01022 , H01L2924/01073 , H01L2924/01044 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/0498 , H01L2924/0496 , H01L2924/0474 , H01L2924/0475 , H01L2924/0478 , H01L2924/0476 , H01L2924/0454 , H01L2924/0455 , H01L2924/0458 , H01L2924/0456 , H01L2924/00012 , H01L2924/01013 , H01L2924/01047 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01028 , H01L2924/01042 , H01L2924/01015 , H01L2924/0105 , H01L2924/0509 , H01L2924/01006 , H01L2924/01014 , H01L2924/0103 , H01L2924/01078 , H01L2924/0665 , H01L2924/01082 , H01L2924/01049 , H01L2924/01083 , H01L2924/00 , H01L2924/20759 , H01L2924/2076 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2224/83205
摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a leadframe having a plurality of leads and a die paddle and a semiconductor module attached to the die paddle of the leadframe. The semiconductor module includes a first semiconductor chip disposed in a first encapsulant. The semiconductor module has a plurality of contact pads coupled to the first semiconductor chip. The semiconductor device further includes a plurality of interconnects coupling the plurality of contact pads with the plurality of leads, and a second encapsulant disposed at the semiconductor module and the leadframe.
摘要翻译： 根据本发明的实施例，半导体器件包括具有多个引线和管芯焊盘的引线框架和连接到引线框架的管芯焊盘的半导体模块。 半导体模块包括设置在第一密封剂中的第一半导体芯片。 半导体模块具有耦合到第一半导体芯片的多个接触焊盘。 半导体器件还包括将多个接触焊盘与多个引线耦合的多个互连以及设置在半导体模块和引线框架处的第二密封剂。
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