公开(公告)号：US09799632B2

公开(公告)日：2017-10-24

申请号：US15457744

申请日：2017-03-13

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC分类号： H01L23/02 ,  H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US09761444B2

公开(公告)日：2017-09-12

申请号：US15084091

申请日：2016-03-29

申请人： The Board of Trustees of the University of Illinois

发明人： Ralph G. Nuzzo ,  John A. Rogers ,  Etienne Menard ,  Keon Jae Lee ,  Dahl-Young Khang ,  Yugang Sun ,  Matthew Meitl ,  Zhengtao Zhu

IPC分类号： H01L21/02 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/786 ,  H01L31/0392 ,  H01L31/18 ,  H01L21/308 ,  H01L29/12 ,  H01L29/04 ,  H01L23/00 ,  H01L21/683 ,  H01L27/12 ,  H01L25/075 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：US09601459B2

公开(公告)日：2017-03-21

申请号：US14576637

申请日：2014-12-19

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC分类号： H01L29/80 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US20170047260A1

公开(公告)日：2017-02-16

申请号：US15333098

申请日：2016-10-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Xin-Hua Huang ,  Ping-Yin Liu ,  Lan-Lin Chao

IPC分类号： H01L21/66 ,  H01L23/00

CPC分类号： H01L22/34 ,  H01L21/768 ,  H01L22/20 ,  H01L22/30 ,  H01L23/492 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/89 ,  H01L24/94 ,  H01L2224/0237 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80075 ,  H01L2224/80121 ,  H01L2224/802 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Presented herein is a device comprising a common node disposed in a first wafer a test node disposed in a first wafer and having a plurality of test pads exposed at a first surface of the first wafer. The test node also has test node lines connected to the test pads and that are separated by a first spacing and extend to a second surface of the first wafer. A comb is disposed in a second wafer and has a plurality of comb lines having a second spacing different from the first spacing. Each of the comb lines has a first surface exposed at a first side of the second wafer. The comb lines provide an indication of an alignment of the first wafer and second wafer by a number or arrangement of connections made by the plurality of comb lines between the test node lines and the common node.

摘要翻译： 本文提出了一种装置，其包括设置在第一晶片中的公共节点，设置在第一晶片中的测试节点并且具有暴露在第一晶片的第一表面处的多个测试焊盘。 测试节点还具有连接到测试焊盘并且被第一间隔分开并延伸到第一晶片的第二表面的测试节点线。 梳子设置在第二晶片中，并且具有多个具有不同于第一间隔的第二间距的梳状线。 每个梳状线具有在第二晶片的第一侧露出的第一表面。 梳线通过由测试节点线和公共节点之间的多条梳线形成的多个或多个连接布置提供第一晶片和第二晶片的对准的指示。

公开(公告)号：US09553014B2

公开(公告)日：2017-01-24

申请号：US14694794

申请日：2015-04-23

申请人： Soitec

发明人： Mariam Sadaka ,  Ionut Radu

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/20 ,  H01L21/683 ,  H01L21/768 ,  H01L25/00 ,  H01L23/538 ,  H01L23/00

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/5384 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/28 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/98 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/03616 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08121 ,  H01L2224/08146 ,  H01L2224/0903 ,  H01L2224/16145 ,  H01L2224/27444 ,  H01L2224/27616 ,  H01L2224/29187 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80011 ,  H01L2224/80121 ,  H01L2224/802 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80805 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83022 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83805 ,  H01L2224/83896 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3512

摘要： Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.

摘要翻译： 制造半导体结构的方法包括将原子物质注入到载体晶粒或晶片中以在载体晶粒或晶片内形成弱化区域，并将载体晶片或晶片结合到半导体结构。 可以在使用载体晶片或晶片来处理半导体结构的同时对半导体结构进行处理。 半导体结构可以结合到另一个半导体结构，并且载体晶片或晶片可以沿其中的弱化区域分割。 使用这种方法制造粘合的半导体结构。

公开(公告)号：US20150357296A1

公开(公告)日：2015-12-10

申请号：US14830820

申请日：2015-08-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ping-Yin LIU ,  Szu-Ying CHEN ,  Chen-Jong WANG ,  Chih-Hui HUANG ,  Xin-Hua HUANG ,  Lan-Lin CHAO ,  Yeur-Luen TU ,  Chia-Shiung TSAI ,  Xiaomeng CHEN

IPC分类号： H01L23/00

CPC分类号： H01L24/03 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/0361 ,  H01L2224/03616 ,  H01L2224/05026 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05187 ,  H01L2224/05547 ,  H01L2224/05553 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08121 ,  H01L2224/08147 ,  H01L2224/80121 ,  H01L2224/80203 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05032 ,  H01L2924/0504 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/05042 ,  H01L2924/059 ,  H01L2224/05552

摘要： A method of forming a hybrid bonding structure includes depositing an etch stop layer over surface of a substrate, wherein the substrate comprises a conductive structure, and the etch stop layer contacts the conductive structure. The method further includes depositing a dielectric material over the etch stop layer. The method further includes depositing a first diffusion barrier layer over the dielectric material. The method further includes forming an opening extending through the etch stop layer, the dielectric material and the diffusion barrier layer. The method further includes lining the opening with a second diffusion barrier layer. The method further includes depositing a conductive pad on the second diffusion barrier layer in the opening, wherein a surface of the first diffusion barrier layer is aligned with a surface of the conductive pad.

摘要翻译： 形成混合键合结构的方法包括在衬底的表面上沉积蚀刻停止层，其中衬底包括导电结构，并且蚀刻停止层接触导电结构。 所述方法还包括在所述蚀刻停止层上沉积介电材料。 该方法还包括在电介质材料上沉积第一扩散阻挡层。 该方法还包括形成延伸通过蚀刻停止层，介电材料和扩散阻挡层的开口。 该方法还包括用第二扩散阻挡层衬套开口。 该方法还包括在开口中的第二扩散阻挡层上沉积导电焊盘，其中第一扩散阻挡层的表面与导电焊盘的表面对准。

公开(公告)号：US20150287694A1

公开(公告)日：2015-10-08

申请号：US14725266

申请日：2015-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ping-Yin Liu ,  Shih-Wei Lin ,  Xin-Hua Huang ,  Lan-Lin Chao ,  Chia-Shiung Tsai

IPC分类号： H01L23/00

CPC分类号： H01L24/80 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/74 ,  H01L24/94 ,  H01L2224/02215 ,  H01L2224/0361 ,  H01L2224/03616 ,  H01L2224/0381 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08145 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/7565 ,  H01L2224/75753 ,  H01L2224/75824 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/8001 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80014 ,  H01L2224/80065 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80121 ,  H01L2224/80136 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83889 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/15 ,  Y10T156/1744 ,  H01L2924/00012 ,  H01L2224/80 ,  H01L2924/05442 ,  H01L2924/00

摘要： Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

摘要翻译： 公开了用于半导体晶片的混合键合系统和方法。 在一个实施例中，用于半导体晶片的混合键合系统包括腔室和设置在腔室内的多个子腔室。 机器人处理器设置在腔室内，其适于移动多个子室内的室内的多个半导体晶片。 多个子室包括适于从多个半导体晶片去除保护层的第一子室，以及适于在混合结合多个半导体之前激活多个半导体晶片的顶表面的第二子室 晶圆在一起 多个子室还包括适于对准多个半导体晶片并将多个半导体晶片混合地结合在一起的第三子室。

公开(公告)号：US09142517B2

公开(公告)日：2015-09-22

申请号：US13664796

申请日：2012-10-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ping-Yin Liu ,  Szu-Ying Chen ,  Chen-Jong Wang ,  Chih-Hui Huang ,  Xin-Hua Huang ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Chia-Chiung Tsai ,  Xiaomeng Chen

IPC分类号： H01L23/00 ,  H01L23/532 ,  H01L21/768 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/03 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/0361 ,  H01L2224/03616 ,  H01L2224/05026 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05187 ,  H01L2224/05547 ,  H01L2224/05553 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08121 ,  H01L2224/08147 ,  H01L2224/80121 ,  H01L2224/80203 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05032 ,  H01L2924/0504 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/05042 ,  H01L2924/059 ,  H01L2224/05552

摘要： The embodiments of diffusion barrier layer described above provide mechanisms for forming a copper diffusion barrier layer to prevent device degradation for hybrid bonding of wafers. The diffusion barrier layer(s) encircles the copper-containing conductive pads used for hybrid bonding. The diffusion barrier layer can be on one of the two bonding wafers or on both bonding wafers.

摘要翻译： 上述扩散阻挡层的实施例提供了用于形成铜扩散阻挡层以防止晶片的混合结合的器件劣化的机制。 扩散阻挡层围绕用于混合键合的含铜导电焊盘。 扩散阻挡层可以在两个接合晶片中的一个上或两个接合晶片上。

公开(公告)号：US20150228535A1

公开(公告)日：2015-08-13

申请号：US14694794

申请日：2015-04-23

申请人： SOITEC

发明人： Mariam Sadaka ,  Ionut Radu

IPC分类号： H01L21/762 ,  H01L23/00 ,  H01L23/538

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/5384 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/28 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/98 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/03616 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08121 ,  H01L2224/08146 ,  H01L2224/0903 ,  H01L2224/16145 ,  H01L2224/27444 ,  H01L2224/27616 ,  H01L2224/29187 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80011 ,  H01L2224/80121 ,  H01L2224/802 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80805 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83022 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83805 ,  H01L2224/83896 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3512

摘要： Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.

摘要翻译： 制造半导体结构的方法包括将原子物质注入到载体晶粒或晶片中以在载体晶粒或晶片内形成弱化区域，并将载体晶片或晶片结合到半导体结构。 可以在使用载体晶片或晶片来处理半导体结构的同时对半导体结构进行处理。 半导体结构可以结合到另一个半导体结构，并且载体晶片或晶片可以沿其中的弱化区域分割。 使用这种方法制造粘合的半导体结构。

公开(公告)号：US20150179605A1

公开(公告)日：2015-06-25

申请号：US14576637

申请日：2014-12-19

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC分类号： H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

摘要翻译： 第一微电子部件与第二微电子部件的接收表面的对准通过与静电取向相结合的毛细管力诱导的自对准来实现。 后者通过沿着第一部件的周边提供至少一个第一电导体线，以及沿着第二部件的接收表面上的位置的周边的至少一个第二电导体，部件将放置在其上 。 由导体线包围的接触区域被润湿层覆盖。 电导体线可以嵌入沿着周边延伸的防湿材料条，以产生润湿性对比度。 润湿性对比度有助于保持接触区域之间的取向液滴，从而通过毛细管力获得自对准。 通过在导体线上施加适当的电荷，实现静电自对准，这改善了通过毛细管力获得的对准并且在液体的蒸发期间保持对准。