公开(公告)号：US20230326768A1

公开(公告)日：2023-10-12

申请号：US18146283

申请日：2022-12-23

申请人： Mitsubishi Electric Corporation

发明人： Daisuke MURATA

IPC分类号： H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  C23C18/12

CPC分类号： H01L21/56 ,  H01L23/29 ,  H01L23/3107 ,  H01L24/48 ,  H01L24/83 ,  C23C18/122 ,  H01L2224/48105 ,  H01L2224/48247 ,  H01L2224/8392

摘要： A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.

公开(公告)号：US20170271174A1

公开(公告)日：2017-09-21

申请号：US15614819

申请日：2017-06-06

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： YONG LIN ,  RONGWEI ZHANG ,  BENJAMIN STASSEN COOK ,  ABRAM CASTRO

IPC分类号： H01L21/50 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L21/50 ,  H01L23/12 ,  H01L23/13 ,  H01L23/14 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49513 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L2021/60277 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/296 ,  H01L2224/32245 ,  H01L2224/45116 ,  H01L2224/45616 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48816 ,  H01L2224/48996 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/80856 ,  H01L2224/83192 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/8502 ,  H01L2224/85051 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/35121 ,  H01L2224/45099 ,  H01L2924/0665 ,  H01L2924/00

摘要： A method includes applying a die attach material to a die pad of an integrated circuit. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit to mitigate delamination between the integrated circuit die and the die pad.

公开(公告)号：US20160260657A1

公开(公告)日：2016-09-08

申请号：US14648558

申请日：2014-09-29

申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.

发明人： Yuichi MIZAWA ,  Takeo NAGASE

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L23/49513 ,  H01L21/56 ,  H01L23/29 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/562 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49171 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/8302 ,  H01L2224/83048 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/8485 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2924/014

摘要： In a semiconductor package, surfaces of a die pad, a semiconductor element, a connecting member, and a lead are subjected to a surface treatment with a silane coupling agent. A first surface of a plurality of surfaces of the semiconductor device includes a first region where an organic substance is exposed, and a second region where an inorganic substance is exposed, the first surface being bonded with the connecting member. A bonding strength between the first region and the sealing resin is weaker than a bonding strength between the second region and the sealing resin.

摘要翻译： 在半导体封装中，使用硅烷偶联剂对芯片焊盘，半导体元件，连接部件和引线的表面进行表面处理。 半导体器件的多个表面的第一表面包括暴露有机物质的第一区域和暴露无机物质的第二区域，第一表面与连接构件接合。 第一区域和密封树脂之间的接合强度弱于第二区域和密封树脂之间的接合强度。

公开(公告)号：US09171818B2

公开(公告)日：2015-10-27

申请号：US13323843

申请日：2011-12-13

申请人： Da-Jung Chen ,  Wen-Hsiung Liao ,  Chun-Fu Hu

发明人： Da-Jung Chen ,  Wen-Hsiung Liao ,  Chun-Fu Hu

IPC分类号： H05K1/16 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31

CPC分类号： H01L24/32 ,  H01L23/3121 ,  H01L23/498 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0556 ,  H01L2224/06181 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/16505 ,  H01L2224/16507 ,  H01L2224/2902 ,  H01L2224/29034 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/30181 ,  H01L2224/32225 ,  H01L2224/32505 ,  H01L2224/32507 ,  H01L2224/81815 ,  H01L2224/8192 ,  H01L2224/83411 ,  H01L2224/83416 ,  H01L2224/83418 ,  H01L2224/83439 ,  H01L2224/83815 ,  H01L2224/8392 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  Y10T29/49155 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： The invention discloses a package structure with an overlaying metallic material overlaying a solder material. A substrate comprises a first solder pad and a second solder pad thereon. A conductive element on the substrate comprises a first electrode and a second electrode thereon. A solder material electrically connects the first solder pad and the second solder pad to the first electrode and the second electrode respectively. An overlaying metallic material overlays the exposed areas of the solder metallic material, the first solder pad, the second solder pad, the first electrode and the second electrode, wherein the exposed areas comprise metallic material having a lower melting point than the second metallic material.

摘要翻译： 本发明公开了一种具有覆盖焊料材料的覆盖金属材料的封装结构。 衬底包括第一焊盘和其上的第二焊垫。 衬底上的导电元件包括​​第一电极和第二电极。 焊料材料将第一焊盘和第二焊盘分别电连接到第一电极和第二电极。 覆盖金属材料覆盖焊料金属材料，第一焊盘，第二焊盘，第一电极和第二电极的暴露区域，其中暴露区域包括具有比第二金属材料低的熔点的金属材料。

公开(公告)号：US20130071971A1

公开(公告)日：2013-03-21

申请号：US13677856

申请日：2012-11-15

申请人： Renesas Electronics Corporation

发明人： Ryoichi KAJIWARA ,  Shigehisa MOTOWAKI ,  Kazutoshi ITO ,  Toshiaki ISHII ,  Katsuo ARAI ,  Takuya NAKAJO ,  Hidemasa KAGII

IPC分类号： H01L21/56

CPC分类号： H01L21/56 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2224/48744

摘要： In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

摘要翻译： 在半导体器件的结构中，Si芯片和金属引线框通过金属接合，通过具有三维网状结构的高导电性金属的多孔接合层，使用Ag作为接合材料，以及含有 在与聚合物树脂接触的半导体组件的表面上形成氧化锌或氧化铝。 以这种方式，通过与主要由Ag形成的多孔结构的接合层的接合，可以降低Si片的热应力负荷，并且可以提高接合层本身的疲劳寿命。 此外，由于通过锚固效应可以提高聚合物树脂对膜的粘附性，可以防止接合部发生裂纹，从而可以提供高可靠性的无铅半导体器件。

公开(公告)号：US20100187678A1

公开(公告)日：2010-07-29

申请号：US12691175

申请日：2010-01-21

申请人： Ryoichi KAJIWARA ,  Shigehisa MOTOWAKI ,  Kazutoshi ITO ,  Toshiaki ISHII ,  Katsuo ARAI ,  Takuya NAKAJO ,  Hidemasa KAGII

发明人： Ryoichi KAJIWARA ,  Shigehisa MOTOWAKI ,  Kazutoshi ITO ,  Toshiaki ISHII ,  Katsuo ARAI ,  Takuya NAKAJO ,  Hidemasa KAGII

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L21/56 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2224/48744

摘要： In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

摘要翻译： 在半导体器件的结构中，Si芯片和金属引线框通过金属接合，通过具有三维网状结构的高导电性金属的多孔接合层，使用Ag作为接合材料，以及含有 在与聚合物树脂接触的半导体组件的表面上形成氧化锌或氧化铝。 以这种方式，通过与主要由Ag形成的多孔结构的接合层的接合，可以降低Si片的热应力负荷，并且可以提高接合层本身的疲劳寿命。 此外，由于通过锚固效应可以提高聚合物树脂对膜的粘附性，可以防止接合部发生裂纹，从而可以提供高可靠性的无铅半导体器件。

公开(公告)号：US20180175012A1

公开(公告)日：2018-06-21

申请号：US15665495

申请日：2017-08-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuo-Ming Wu ,  Kuan-Liang Liu ,  Wen-De Wang ,  Yung-Lung Lin

IPC分类号： H01L25/00 ,  H01L23/58 ,  H01L23/00

CPC分类号： H01L25/50 ,  H01L23/3114 ,  H01L23/564 ,  H01L23/585 ,  H01L24/29 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1161 ,  H01L2224/1162 ,  H01L2224/11845 ,  H01L2224/13147 ,  H01L2224/17517 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/2761 ,  H01L2224/2762 ,  H01L2224/27845 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29015 ,  H01L2224/29019 ,  H01L2224/29035 ,  H01L2224/29147 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/83193 ,  H01L2224/83815 ,  H01L2224/83895 ,  H01L2224/8392 ,  H01L2224/83935 ,  H01L2224/83951 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A three-dimensional (3D) integrated circuit (IC) includes a first IC die and a second IC die. The first IC die includes a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The second IC die includes a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

公开(公告)号：US09633939B2

公开(公告)日：2017-04-25

申请号：US15049872

申请日：2016-02-22

申请人： Amkor Technology, Inc.

发明人： Do Hyung Kim ,  Dae Joon Park ,  See Won Kim ,  Jung Soo Park

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/49838 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2732 ,  H01L2224/27418 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32058 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81466 ,  H01L2224/81471 ,  H01L2224/81484 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/83005 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83855 ,  H01L2224/8392 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/0105 ,  H01L2224/03 ,  H01L2224/11

摘要： A semiconductor package and a method of manufacturing a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor packages, and methods of making thereof, that comprise a cover layer that enhances reliability of the semiconductor packages.

公开(公告)号：US09355973B2

公开(公告)日：2016-05-31

申请号：US14531916

申请日：2014-11-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Hao Tsai ,  Jui-Pin Hung ,  Jing-Cheng Lin

IPC分类号： H01L21/48 ,  H01L21/78 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10 ,  H01L23/538 ,  H01L23/31

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/19 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/02317 ,  H01L2224/033 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/8392 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1047 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/83005

摘要： Packaged semiconductor devices, methods of packaging semiconductor devices, and package-on-package (PoP) devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming through-package vias (TPVs) over a carrier, and coupling a semiconductor device to the carrier. The semiconductor device includes contact pads disposed on a surface thereof and an insulating material disposed over the contact pads. A molding material is formed over the carrier between the TPVs and the semiconductor device. Openings are formed in the insulating material using a laser drilling process over the contact pads, and a redistribution layer (RDL) is formed over the insulating material and the openings in the insulating material. A portion of the RDL is coupled to a top surface of each of the contact pads.

摘要翻译： 公开了封装半导体器件，封装半导体器件的方法和封装封装（PoP）器件。 在一些实施例中，封装半导体器件的方法包括在载体上形成贯穿封装通孔（TPV），以及将半导体器件耦合到载体。 半导体器件包括设置在其表面上的接触焊盘和设置在接触焊盘上的绝缘材料。 在TPV和半导体器件之间的载体上形成模制材料。 使用在接触焊盘上的激光钻孔工艺在绝缘材料中形成开口，并且在绝缘材料和绝缘材料中的开口上形成再分布层（RDL）。 RDL的一部分耦合到每个接触焊盘的顶表面。

公开(公告)号：US09177934B2

公开(公告)日：2015-11-03

申请号：US14377895

申请日：2013-01-25

申请人： Robert Bosch GmbH

发明人： Christiane Frueh ,  Andreas Fix

IPC分类号： H01L23/00

CPC分类号： H01L24/32 ,  B23K1/0008 ,  B23K1/19 ,  B23K35/025 ,  B23K35/3006 ,  B23K2103/08 ,  B23K2103/56 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/83 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29016 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/30515 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/83951 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/3512 ,  H01L2924/00

摘要： The connection arrangement (100, 200, 300, 400) comprises at least one electric and/or electronic component (1). The at least one electric and/or electronic component (10) has at least one connection face (11), which is connected in a bonded manner to a join partner (40) by means of a connection layer (20). The connection layer (20) can for example be an adhesive, soldered, welded, sintered connection or another known connection that connects joining partners while forming a material connection. Furthermore, a reinforcement layer (30′) is arranged adjacent to the connection layer (20) in a bonded manner. The reinforcement layer (30′) has a higher modulus of elasticity than the connection layer (20). A particularly good protective effect is achieved if the reinforcement layer (30′) is formed in a frame-like manner by an outer and an inner boundary (36, 35) and, at least with the outer boundary (36) thereof, encloses the connection face (11) of the at least one electric and/or electronic component (10).

摘要翻译： 连接装置（100,200,300,400）包括至少一个电气和/或电子部件（1）。 所述至少一个电和/或电子部件（10）具有至少一个连接面（11），所述至少一个连接面（11）通过连接层（20）以接合方式连接到接合对象（40）。 连接层（20）可以例如是形成材料连接的粘合剂，焊接，焊接，烧结连接或连接连接伙伴的另一已知连接。 此外，加强层（30'）以接合的方式邻近连接层（20）布置。 加强层（30'）具有比连接层（20）更高的弹性模量。 如果加强层（30'）通过外边界和内边界（36,35）以框架状的方式形成，并且至少其外边界（36）包围 所述至少一个电和/或电子部件（10）的连接面（11）。