公开(公告)号：US09021682B2

公开(公告)日：2015-05-05

申请号：US13527459

申请日：2012-06-19

申请人： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01R43/052 ,  H01L21/48 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L24/13 ,  H01L24/78 ,  H01L2224/056 ,  H01L2224/1111 ,  H01L2224/1134 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/451 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48 ,  H01L2224/7855 ,  H01L2224/78621 ,  H01L2224/85051 ,  H01L2224/854 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/206 ,  Y10T29/49192 ,  Y10T29/49213 ,  Y10T29/514 ,  Y10T29/5177 ,  Y10T29/53217 ,  Y10T29/53235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01049 ,  H01L2224/4554

摘要： An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

摘要翻译： 一种装置包括：线圈，其被配置为供应线，被配置为在所述线中形成切口的切割装置，以及被配置为结合所述线并形成柱形凸块的毛细管。 该设备还被配置为拉动线在凹口处断裂，尾部区域附接到柱形凸块。

公开(公告)号：US08749043B2

公开(公告)日：2014-06-10

申请号：US13409756

申请日：2012-03-01

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/02 ,  H01L21/16

CPC分类号： H01L24/14 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/11011 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/0206 ,  H05K1/0306 ,  H05K1/113 ,  H05K2201/068 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A package on packaging structure comprising a first package and a second package provides for improved thermal conduction and mechanical strength by the introduction of a thermally conductive substrate attached to the second package. The first package has a first substrate and a first integrated circuit. The second package has a second substrate containing through vias that has a first coefficient of thermal expansion. The second package also has a second integrated circuit having a second coefficient of thermal expansion located on the second substrate. The second coefficient of thermal expansion deviates from the first coefficient of thermal expansion by less than about 10 or less than about 5 parts-per-million per degree Celsius. A first set of conductive elements couples the first substrate and the second substrate. A second set of conductive elements couples the second substrate and the second integrated circuit.

摘要翻译： 包装结构包括第一包装和第二包装通过引入连接到第二包装件上的导热基材提供改进的热传导和机械强度。 第一封装具有第一衬底和第一集成电路。 第二包装具有包含通孔的第二基板，其具有第一热膨胀系数。 第二封装还具有第二集成电路，其具有位于第二基板上的第二热膨胀系数。 第二热膨胀系数从第一热膨胀系数偏离每摄氏度小于约10或小于约5百万分之一。 第一组导电元件将第一基板和第二基板连接。 第二组导电元件将第二基板和第二集成电路耦合。

公开(公告)号：US08735273B2

公开(公告)日：2014-05-27

申请号：US13179299

申请日：2011-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L21/566 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/525 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/03903 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.

摘要翻译： 一种方法包括在覆盖半导体衬底的金属焊盘上形成钝化层。 在钝化层中形成第一开口，金属垫的一部分通过第一开口暴露。 种子层形成在钝化层之上并且电耦合到金属焊盘。 种子层还包括钝化层上的部分。 在种子层上形成第一掩模，其中第一掩模具有直接在金属焊盘的至少一部分上的第二开口。 在种子层和第二开口中形成PPI。 在第一掩模上形成第二掩模，第二掩模形成在第二掩模中。 金属凸块的一部分形成在第三开口中。 在形成金属凸块的部分的步骤之后，去除第一和第二掩模。

公开(公告)号：US08540136B1

公开(公告)日：2013-09-24

申请号：US13605403

申请日：2012-09-06

申请人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： B23K31/02 ,  B23K37/00

CPC分类号： B23K31/02 ,  B21D53/36 ,  B23K20/007 ,  H01L2224/78301 ,  Y10T29/49

摘要： Methods for forming stud bumps and apparatuses for forming stud bumps are disclosed. According to an embodiment, a method includes clamping a wire with a clamp. The clamp includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method further includes bonding the wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface. The second notch is the notch pitch distance from the first notch along the wire.

摘要翻译： 公开了用于形成柱形凸块的方法和用于形成凸块凸块的装置。 根据实施例，一种方法包括用夹具夹紧线。 所述夹具包括至少两个相对的板，并且当所述线被夹紧形成所述线中的第一凹口时，所述相对板中的至少一个包括与所述线相交的突出特征。 该方法还包括将线接合到接合表面，将线从夹具中释放出来，使线穿过钳口的间距距离通过夹具夹紧线，夹具在线中形成第二凹口，并将线断开， 接合表面上的导线的接合部分。 第二个凹口是距离第一个凹口沿导线的切口间距距离。

公开(公告)号：US20130228932A1

公开(公告)日：2013-09-05

申请号：US13409756

申请日：2012-03-01

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L24/14 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/11011 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/0206 ,  H05K1/0306 ,  H05K1/113 ,  H05K2201/068 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A package on packaging structure comprising a first package and a second package provides for improved thermal conduction and mechanical strength by the introduction of a thermally conductive substrate attached to the second package. The first package has a first substrate and a first integrated circuit. The second package has a second substrate containing through vias that has a first coefficient of thermal expansion. The second package also has a second integrated circuit having a second coefficient of thermal expansion located on the second substrate. The second coefficient of thermal expansion deviates from the first coefficient of thermal expansion by less than about 10 or less than about 5 parts-per-million per degree Celsius. A first set of conductive elements couples the first substrate and the second substrate. A second set of conductive elements couples the second substrate and the second integrated circuit.

公开(公告)号：US20130009307A1

公开(公告)日：2013-01-10

申请号：US13179299

申请日：2011-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L21/566 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/525 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/03903 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.

摘要翻译： 一种方法包括在覆盖在半导体衬底上的金属焊盘上形成钝化层。 在钝化层中形成第一开口，金属垫的一部分通过第一开口暴露。 种子层形成在钝化层之上并且电耦合到金属焊盘。 种子层还包括钝化层上的部分。 在种子层上形成第一掩模，其中第一掩模具有直接在金属焊盘的至少一部分上的第二开口。 在种子层和第二开口中形成PPI。 在第一掩模上形成第二掩模，第二掩模形成在第二掩模中。 金属凸块的一部分形成在第三开口中。 在形成金属凸块的部分的步骤之后，去除第一和第二掩模。

公开(公告)号：US08912651B2

公开(公告)日：2014-12-16

申请号：US13397747

申请日：2012-02-16

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

IPC分类号： H01L23/498

CPC分类号： H01L25/0657 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05693 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16503 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48693 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48793 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48893 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81026 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/01006

摘要： Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

摘要翻译： 实施例涉及包装封装（PoP）结构，包括柱状灯泡和形成PoP结构的方法。 根据实施例，结构包括第一基板，螺柱灯泡，模具，第二基板和电连接器。 螺柱灯泡耦合到第一基板的第一表面。 模具附接到第一基板的第一表面。 电连接器耦合到第二基板，并且相应的电连接器耦合到相应的螺柱灯泡。

公开(公告)号：US08664041B2

公开(公告)日：2014-03-04

申请号：US13445699

申请日：2012-04-12

申请人： Yu-Jen Tseng ,  Guan-Yu Chen ,  Sheng-Yu Wu ,  Chen-Hua Yu ,  Mirng-Ji Lii ,  Chen-Shien Chen ,  Tin-Hao Kuo

发明人： Yu-Jen Tseng ,  Guan-Yu Chen ,  Sheng-Yu Wu ,  Chen-Hua Yu ,  Mirng-Ji Lii ,  Chen-Shien Chen ,  Tin-Hao Kuo

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： G06F17/5068 ,  H01L23/3192 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17104 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81444 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2224/1144

摘要： A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.

摘要翻译： 一种用于防止在跟踪轨迹结构中的相邻金属迹线桥接的方法和装置。 一个实施例包括确定包装部件的热膨胀系数（CTE）和工艺参数。 然后分析设计参数，并且可以基于包装部件的CTE和工艺参数来修改设计参数。

公开(公告)号：US20130270699A1

公开(公告)日：2013-10-17

申请号：US13449078

申请日：2012-04-17

申请人： Tin-Hao Kuo ,  Chen-Shien Chen ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Sheng-Yu Wu ,  Yao-Chun Chuang

发明人： Tin-Hao Kuo ,  Chen-Shien Chen ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Sheng-Yu Wu ,  Yao-Chun Chuang

IPC分类号： H01L23/498

CPC分类号： H01L24/13 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11903 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13025 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。

公开(公告)号：US20130062761A1

公开(公告)日：2013-03-14

申请号：US13228768

申请日：2011-09-09

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06515 ,  H01L2224/09181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.