专利检索 ap:("Chen-Fa Lu" OR "Chung-Shi Liu" OR "Mirng-Ji Lii" OR "Chen-Hua Yu") AND inv:"Chung-Shi Liu" 第 1 页

1.

发明授权
Bump structure with barrier layer on post-passivation interconnect 有权
标题翻译：在钝化后互连上具有阻挡层的凹凸结构

公开(公告)号：US08716858B2

公开(公告)日：2014-05-06

申请号：US13167946

申请日：2011-06-24

申请人： Chen-Fa Lu , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Chen-Fa Lu , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L23/48

CPC分类号： H01L24/03 , H01L23/3114 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05571 , H01L2224/05583 , H01L2224/05609 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/11334 , H01L2224/11849 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16147 , H01L2224/16237 , H01L2224/81191 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/8191 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2924/01029 , H01L2924/00012 , H01L2924/01082 , H01L2924/01046 , H01L2924/01079 , H01L2924/01047 , H01L2924/014 , H01L2924/00 , H01L2224/05552

摘要： A semiconductor device includes a barrier layer between a solder bump and a post-passivation interconnect (PPI) layer. The barrier layer is formed of at least one of an electroless nickel (Ni) layer, an electroless palladium (Pd) layer or an immersion gold (Au) layer.

摘要翻译： 半导体器件包括在焊料凸块和钝化后互连（PPI）层之间的阻挡层。阻挡层由无电镀镍（Ni）层，无电解钯（Pd）层或浸金（Au）层中的至少一种形成。

2.

发明授权
Apparatus for stud bump formation 有权
标题翻译：用于柱形凸块形成的装置

公开(公告)号：US09021682B2

公开(公告)日：2015-05-05

申请号：US13527459

申请日：2012-06-19

申请人： Chien Ling Hwang , Yeong-Jyh Lin , Yi-Li Hsiao , Ming-Da Cheng , Tsai-Tsung Tsai , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Chien Ling Hwang , Yeong-Jyh Lin , Yi-Li Hsiao , Ming-Da Cheng , Tsai-Tsung Tsai , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01R43/052 , H01L21/48 , H01L23/00

CPC分类号： H01L24/11 , H01L21/4853 , H01L24/13 , H01L24/78 , H01L2224/056 , H01L2224/1111 , H01L2224/1134 , H01L2224/13005 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13164 , H01L2224/13169 , H01L2224/451 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48 , H01L2224/7855 , H01L2224/78621 , H01L2224/85051 , H01L2224/854 , H01L2924/00011 , H01L2924/00012 , H01L2924/00014 , H01L2924/206 , Y10T29/49192 , Y10T29/49213 , Y10T29/514 , Y10T29/5177 , Y10T29/53217 , Y10T29/53235 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2924/01049 , H01L2224/4554

摘要： An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

摘要翻译： 一种装置包括：线圈，其被配置为供应线，被配置为在所述线中形成切口的切割装置，以及被配置为结合所述线并形成柱形凸块的毛细管。该设备还被配置为拉动线在凹口处断裂，尾部区域附接到柱形凸块。

3.

发明授权
Forming wafer-level chip scale package structures with reduced number of seed layers 有权
标题翻译：形成具有减少种子层数的晶片级芯片级封装结构

公开(公告)号：US08735273B2

公开(公告)日：2014-05-27

申请号：US13179299

申请日：2011-07-08

申请人： Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Yi-Wen Wu , Hsiu-Jen Lin , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Yi-Wen Wu , Hsiu-Jen Lin , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L24/03 , H01L21/566 , H01L21/76885 , H01L23/3114 , H01L23/3157 , H01L23/525 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02311 , H01L2224/02331 , H01L2224/0235 , H01L2224/02375 , H01L2224/0346 , H01L2224/0347 , H01L2224/03903 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05552 , H01L2224/05567 , H01L2224/05655 , H01L2224/05664 , H01L2224/11334 , H01L2224/11849 , H01L2224/1191 , H01L2224/13022 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/00

摘要： A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.

摘要翻译： 一种方法包括在覆盖半导体衬底的金属焊盘上形成钝化层。在钝化层中形成第一开口，金属垫的一部分通过第一开口暴露。种子层形成在钝化层之上并且电耦合到金属焊盘。种子层还包括钝化层上的部分。在种子层上形成第一掩模，其中第一掩模具有直接在金属焊盘的至少一部分上的第二开口。在种子层和第二开口中形成PPI。在第一掩模上形成第二掩模，第二掩模形成在第二掩模中。金属凸块的一部分形成在第三开口中。在形成金属凸块的部分的步骤之后，去除第一和第二掩模。

4.

发明授权
Methods for stud bump formation and apparatus for performing the same 有权
标题翻译：螺栓凸块形成方法及其执行方法

公开(公告)号：US08540136B1

公开(公告)日：2013-09-24

申请号：US13605403

申请日：2012-09-06

申请人： Yeong-Jyh Lin , Hsin-Hung Liao , Chien Ling Hwang , Yi-Li Hsiao , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Yeong-Jyh Lin , Hsin-Hung Liao , Chien Ling Hwang , Yi-Li Hsiao , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： B23K31/02 , B23K37/00

CPC分类号： B23K31/02 , B21D53/36 , B23K20/007 , H01L2224/78301 , Y10T29/49

摘要： Methods for forming stud bumps and apparatuses for forming stud bumps are disclosed. According to an embodiment, a method includes clamping a wire with a clamp. The clamp includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method further includes bonding the wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface. The second notch is the notch pitch distance from the first notch along the wire.

摘要翻译： 公开了用于形成柱形凸块的方法和用于形成凸块凸块的装置。根据实施例，一种方法包括用夹具夹紧线。所述夹具包括至少两个相对的板，并且当所述线被夹紧形成所述线中的第一凹口时，所述相对板中的至少一个包括与所述线相交的突出特征。该方法还包括将线接合到接合表面，将线从夹具中释放出来，使线穿过钳口的间距距离通过夹具夹紧线，夹具在线中形成第二凹口，并将线断开，接合表面上的导线的接合部分。第二个凹口是距离第一个凹口沿导线的切口间距距离。

5.

发明申请
Forming Wafer-Level Chip Scale Package Structures with Reduced number of Seed Layers 有权
标题翻译：形成具有减少种子层数的晶片级芯片级封装结构

公开(公告)号：US20130009307A1

公开(公告)日：2013-01-10

申请号：US13179299

申请日：2011-07-08

申请人： Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Yi-Wen Wu , Hsiu-Jen Lin , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Yi-Wen Wu , Hsiu-Jen Lin , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L23/498 , H01L21/60

CPC分类号： H01L24/03 , H01L21/566 , H01L21/76885 , H01L23/3114 , H01L23/3157 , H01L23/525 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02311 , H01L2224/02331 , H01L2224/0235 , H01L2224/02375 , H01L2224/0346 , H01L2224/0347 , H01L2224/03903 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05552 , H01L2224/05567 , H01L2224/05655 , H01L2224/05664 , H01L2224/11334 , H01L2224/11849 , H01L2224/1191 , H01L2224/13022 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/00

摘要： A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.

摘要翻译： 一种方法包括在覆盖在半导体衬底上的金属焊盘上形成钝化层。在钝化层中形成第一开口，金属垫的一部分通过第一开口暴露。种子层形成在钝化层之上并且电耦合到金属焊盘。种子层还包括钝化层上的部分。在种子层上形成第一掩模，其中第一掩模具有直接在金属焊盘的至少一部分上的第二开口。在种子层和第二开口中形成PPI。在第一掩模上形成第二掩模，第二掩模形成在第二掩模中。金属凸块的一部分形成在第三开口中。在形成金属凸块的部分的步骤之后，去除第一和第二掩模。

6.

发明授权
Package on package structures and methods for forming the same 有权
标题翻译：包装结构及其形成方法

公开(公告)号：US09219030B2

公开(公告)日：2015-12-22

申请号：US13526073

申请日：2012-06-18

申请人： Chen-Hua Yu , Mirng-Ji Lii , Chung-Shi Liu , Meng-Tse Chen , Wei-Hung Lin , Ming-Da Cheng

发明人： Chen-Hua Yu , Mirng-Ji Lii , Chung-Shi Liu , Meng-Tse Chen , Wei-Hung Lin , Ming-Da Cheng

IPC分类号： H01L23/498 , H01L21/78 , H01L23/00 , H01L21/56 , H01L25/10 , H01L23/31 , H01L25/03 , H01L25/00

CPC分类号： H01L24/05 , B23K35/001 , B23K35/0222 , B23K35/22 , B23K35/262 , B23K35/3613 , H01L21/561 , H01L23/3135 , H01L23/3178 , H01L23/498 , H01L23/49816 , H01L24/08 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/03 , H01L25/0652 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05184 , H01L2224/05572 , H01L2224/05611 , H01L2224/06181 , H01L2224/08113 , H01L2224/1184 , H01L2224/13005 , H01L2224/13014 , H01L2224/13022 , H01L2224/13023 , H01L2224/13026 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/1355 , H01L2224/13561 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13666 , H01L2224/1412 , H01L2224/14181 , H01L2224/16104 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17051 , H01L2224/48091 , H01L2224/48227 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/381 , H01L2924/3841 , H01L2924/00 , H01L2224/81 , H01L2924/01047 , H01L2924/01029 , H01L2924/01083 , H01L2924/013 , H01L2924/206 , H01L2224/05552 , H01L2924/00012

摘要： The described embodiments of mechanisms of forming a package on package (PoP) structure involve bonding with connectors with non-solder metal balls to a packaging substrate. The non-solder metal balls may include a solder coating layer. The connectors with non-solder metal balls can maintain substantially the shape of the connectors and control the height of the bonding structures between upper and lower packages. The connectors with non-solder metal balls are also less likely to result in bridging between connectors or disconnection (or cold joint) of bonded connectors. As a result, the pitch of the connectors with non-solder metal balls can be kept small.

摘要翻译： 形成封装封装（PoP）结构的机构的所述实施例包括将具有非焊料金属球的连接器与包装衬底结合。非焊接金属球可以包括焊料涂层。具有非焊接金属球的连接器可以基本保持连接器的形状并控制上部和下部封装之间的结合结构的高度。具有非焊接金属球的连接器也不太可能导致连接器之间的桥接或接合连接器的断开（或冷接头）。结果，可以将具有非焊接金属球的连接器的间距保持较小。

7.

发明授权
Package-on-package (PoP) structure having at least one package comprising one die being disposed in a core material between first and second surfaces of the core material 有权
标题翻译：封装封装（PoP）结构，其具有至少一个封装，其包括一个管芯，其设置在芯材料的芯材料的第一和第二表面之间

公开(公告)号：US09123763B2

公开(公告)日：2015-09-01

申请号：US13271952

申请日：2011-10-12

申请人： Chen-Hua Yu , Chung-Shi Liu , Mirng-Ji Lii , Ming-Da Cheng , Chih-Wei Lin

发明人： Chen-Hua Yu , Chung-Shi Liu , Mirng-Ji Lii , Ming-Da Cheng , Chih-Wei Lin

IPC分类号： H01L23/48 , H01L21/683 , H01L23/538 , H01L21/56 , H01L25/10 , H01L21/36 , H01L23/31 , H01L21/48 , H01L23/00 , H05K1/18 , H01L23/498

CPC分类号： H01L25/50 , H01L21/31051 , H01L21/4846 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L21/76802 , H01L21/76819 , H01L21/76877 , H01L21/76898 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5383 , H01L24/16 , H01L24/19 , H01L24/32 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2224/04105 , H01L2224/12105 , H01L2224/13082 , H01L2224/131 , H01L2224/16225 , H01L2224/16237 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/73204 , H01L2224/73253 , H01L2224/73267 , H01L2224/81005 , H01L2224/81191 , H01L2224/81815 , H01L2224/83104 , H01L2225/06513 , H01L2225/06548 , H01L2225/06555 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/12042 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H05K1/185 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/0665 , H01L2224/48

摘要： A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL.

摘要翻译： 封装封装（PoP）结构包括第一封装和第二封装。第一包装包括第一模具，第二模具和芯材料。芯材料具有第一表面和第二表面。第一再分配层（RDL）位于第一表面上，第二RDL位于第二表面上。第一模具设置在第一表面和第二表面之间的芯材料中。第二管芯耦合到第一RDL和第二RDL之一。第二包装包括第三管芯和插入件。插入器具有第一侧和第二侧。第三裸片耦合到插入器的第二侧。第一封装通过耦合到插入件的第二侧和第一RDL的第一电连接器耦合到第二封装。

8.

发明授权
UBM etching methods for eliminating undercut 有权
标题翻译：用于消除底切的UBM蚀刻方法

公开(公告)号：US08501613B2

公开(公告)日：2013-08-06

申请号：US13178276

申请日：2011-07-07

申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00

摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.

摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。在UBM层的开口和第二部分上形成金属凸块。然后取下面具。执行激光去除以去除UBM层的第一部分的一部分并形成UBM。