公开(公告)号：US08659155B2

公开(公告)日：2014-02-25

申请号：US12846353

申请日：2010-07-29

申请人： Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Ching-Wen Chen ,  Yi-Wen Wu ,  Chia-Tung Chang ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Ching-Wen Chen ,  Yi-Wen Wu ,  Chia-Tung Chang ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

摘要翻译： 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

公开(公告)号：US20140015122A1

公开(公告)日：2014-01-16

申请号：US13546300

申请日：2012-07-11

申请人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L23/525 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02331 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of forming post passivation interconnects comprises forming a passivation layer over a substrate, wherein a metal pad is embedded in the passivation layer, depositing a first dielectric layer on the passivation layer, applying a first patterning process to the first dielectric layer to form a first opening, forming a first seed layer over the first opening, filling the first opening with a conductive material, depositing a second dielectric layer on the first dielectric layer, applying a second patterning process to the second dielectric layer to form a second opening, forming an under bump metallization structure over the second opening and mounting an interconnect bump over the under bump metallization structure.

摘要翻译： 形成后钝化互连的方法包括在衬底上形成钝化层，其中金属焊盘嵌入钝化层中，在钝化层上沉积第一介电层，将第一图案化工艺应用于第一介电层以形成 第一开口，在第一开口上形成第一种子层，用导电材料填充第一开口，在第一介电层上沉积第二介电层，向第二介电层施加第二图案化工艺以形成第二开口，形成 在第二开口上方的凸块下金属化结构，并且在凸块下金属化结构之上安装互连凸块。

公开(公告)号：US20130334692A1

公开(公告)日：2013-12-19

申请号：US13527422

申请日：2012-06-19

申请人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Tzong-Hann Yang ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Tzong-Hann Yang ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： B23K31/02 ,  H01L23/488

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/32135 ,  H01L2224/32141 ,  H01L2224/32145 ,  H01L2224/81085 ,  H01L2224/811 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81232 ,  H01L2224/81355 ,  H01L2224/81359 ,  H01L2224/81801 ,  H01L2224/8192 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2924/01015 ,  H01L2924/06 ,  H01L2924/00

摘要： A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

摘要翻译： 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电​​连接器与第二电连接器对准，金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。

公开(公告)号：US20130328190A1

公开(公告)日：2013-12-12

申请号：US13492285

申请日：2012-06-08

申请人： Yi-Wen Wu ,  Ming-Che Ho ,  Wen-Hsiung Lu ,  Chia-Wei Tu ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Ming-Che Ho ,  Wen-Hsiung Lu ,  Chia-Wei Tu ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/06 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02331 ,  H01L2224/02351 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06051 ,  H01L2224/10145 ,  H01L2224/11334 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/01023 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.

公开(公告)号：US20130175685A1

公开(公告)日：2013-07-11

申请号：US13344446

申请日：2012-01-05

申请人： Yi-Wen Wu ,  Zheng-Yi Lim ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Zheng-Yi Lim ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/768 ,  H01L23/485

CPC分类号： H01L23/485 ,  H01L21/768 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05541 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2924/014

摘要： A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.

摘要翻译： 一种方法包括在金属垫上形成聚合物层，在聚合物层中形成开口以暴露金属垫的一部分，并形成凸点下冶金（UBM）。 UBM包括延伸到开口中以电耦合到金属垫的部分。

公开(公告)号：US08865585B2

公开(公告)日：2014-10-21

申请号：US13546300

申请日：2012-07-11

申请人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L23/525 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02331 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of forming post passivation interconnects comprises forming a passivation layer over a substrate, wherein a metal pad is embedded in the passivation layer, depositing a first dielectric layer on the passivation layer, applying a first patterning process to the first dielectric layer to form a first opening, forming a first seed layer over the first opening, filling the first opening with a conductive material, depositing a second dielectric layer on the first dielectric layer, applying a second patterning process to the second dielectric layer to form a second opening, forming an under bump metallization structure over the second opening and mounting an interconnect bump over the under bump metallization structure.

摘要翻译： 形成后钝化互连的方法包括在衬底上形成钝化层，其中金属焊盘嵌入钝化层中，在钝化层上沉积第一介电层，将第一图案化工艺应用于第一介电层以形成 第一开口，在第一开口上形成第一种子层，用导电材料填充第一开口，在第一介电层上沉积第二介电层，向第二介电层施加第二图案化工艺以形成第二开口，形成 在第二开口上方的凸块下金属化结构，并且在凸块下金属化结构之上安装互连凸块。

公开(公告)号：US08791579B2

公开(公告)日：2014-07-29

申请号：US13299100

申请日：2011-11-17

申请人： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

发明人： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/485 ,  H01L23/495

CPC分类号： G06F17/5077 ,  G06F17/5072 ,  H01L23/488 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.

摘要翻译： 一种装置包括在包装部件的顶表面上的多个连接器。 多个连接器包括具有第一横向尺寸的第一连接器和具有第二横向尺寸的第二连接器。 第二横向尺寸大于第一横向尺寸。 第一和第二横向尺寸在平行于包装部件的主表面的方向上测量。

公开(公告)号：US08703546B2

公开(公告)日：2014-04-22

申请号：US12784314

申请日：2010-05-20

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/82 ,  H01L21/288

CPC分类号： H01L21/288 ,  C25D7/123 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/93 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.

摘要翻译： 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。

公开(公告)号：US08609526B2

公开(公告)日：2013-12-17

申请号：US12842617

申请日：2010-07-23

申请人： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

发明人： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

IPC分类号： H01L21/445 ,  H01L21/4757

CPC分类号： H01L24/05 ,  H01L21/0206 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/81022 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.

摘要翻译： 形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。 除氧步骤使用包括氟和氧的工艺气体进行。 然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。 含铜层镀在含铜种子层上。

公开(公告)号：US08569897B2

公开(公告)日：2013-10-29

申请号：US12786818

申请日：2010-05-25

申请人： Chung-Shi Liu ,  Chien Ling Hwang ,  Ming-Che Ho

发明人： Chung-Shi Liu ,  Chien Ling Hwang ,  Ming-Che Ho

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.

摘要翻译： 在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。