专利检索 ap:("Chen-Hua Yu" OR "Yung Ching Chen" OR "Chien-Hsun Lee" OR "Mirng-Ji Lii") AND inv:"Chen-Hua Yu" 第 3 页

21.

发明授权
Method for designing a package and substrate layout 有权
标题翻译：设计封装和基板布局的方法

公开(公告)号：US08664041B2

公开(公告)日：2014-03-04

申请号：US13445699

申请日：2012-04-12

申请人： Yu-Jen Tseng , Guan-Yu Chen , Sheng-Yu Wu , Chen-Hua Yu , Mirng-Ji Lii , Chen-Shien Chen , Tin-Hao Kuo

发明人： Yu-Jen Tseng , Guan-Yu Chen , Sheng-Yu Wu , Chen-Hua Yu , Mirng-Ji Lii , Chen-Shien Chen , Tin-Hao Kuo

IPC分类号： H01L21/44 , H01L21/48 , H01L21/50

CPC分类号： G06F17/5068 , H01L23/3192 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11849 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13015 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16105 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17104 , H01L2224/81191 , H01L2224/81385 , H01L2224/81444 , H01L2224/81815 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2924/01029 , H01L2924/01074 , H01L2224/1144

摘要： A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.

摘要翻译： 一种用于防止在跟踪轨迹结构中的相邻金属迹线桥接的方法和装置。一个实施例包括确定包装部件的热膨胀系数（CTE）和工艺参数。然后分析设计参数，并且可以基于包装部件的CTE和工艺参数来修改设计参数。

22.

发明申请
Conical-Shaped or Tier-Shaped Pillar Connections 有权
标题翻译：圆锥形或层状柱连接

公开(公告)号：US20130270699A1

公开(公告)日：2013-10-17

申请号：US13449078

申请日：2012-04-17

申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang

发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang

IPC分类号： H01L23/498

CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00

摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

摘要翻译： 提供了一种用于衬底的柱结构。支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。支柱结构在平面图中可以具有圆形或细长形状。衬底可以耦合到另一衬底。在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。

23.

发明申请
Packaging Methods and Structures for Semiconductor Devices 有权

公开(公告)号：US20130062761A1

公开(公告)日：2013-03-14

申请号：US13228768

申请日：2011-09-09

申请人： Chih-Wei Lin , Ming-Da Cheng , Wen-Hsiung Lu , Hsiu-Jen Lin , Bor-Ping Jang , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu , Meng-Tse Chen , Chun-Cheng Lin , Yu-Peng Tsai , Kuei-Wei Huang , Wei-Hung Lin

发明人： Chih-Wei Lin , Ming-Da Cheng , Wen-Hsiung Lu , Hsiu-Jen Lin , Bor-Ping Jang , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu , Meng-Tse Chen , Chun-Cheng Lin , Yu-Peng Tsai , Kuei-Wei Huang , Wei-Hung Lin

IPC分类号： H01L23/498 , H01L21/56

CPC分类号： H01L25/0657 , H01L21/52 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L21/76898 , H01L23/3128 , H01L23/3135 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/09 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/92 , H01L24/97 , H01L25/03 , H01L25/0652 , H01L25/0655 , H01L25/105 , H01L25/50 , H01L2221/68331 , H01L2221/68345 , H01L2221/68377 , H01L2224/0231 , H01L2224/0401 , H01L2224/04105 , H01L2224/06515 , H01L2224/09181 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16238 , H01L2224/73259 , H01L2224/81005 , H01L2224/81191 , H01L2224/81815 , H01L2224/9202 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06548 , H01L2924/14 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/15322 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2224/81 , H01L2224/03 , H01L2924/014 , H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.

24.

发明授权
Method of forming electrical connections 有权
标题翻译：电连接方法

公开(公告)号：US08377816B2

公开(公告)日：2013-02-19

申请号：US12768025

申请日：2010-04-27

申请人： Chung-Shi Liu , Shin-Puu Jeng , Mirng-Ji Lii , Chen-Hua Yu

发明人： Chung-Shi Liu , Shin-Puu Jeng , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L23/3171 , H01L21/563 , H01L23/525 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/10126 , H01L2224/1147 , H01L2224/1308 , H01L2224/13082 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/73203 , H01L2924/00013 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2224/13099

摘要： A method of forming electrical connections to a semiconductor wafer. A semiconductor wafer comprising an insulation layer is provided. The insulation layer has a surface. A patterned mask layer is formed over the surface of the insulation layer. The patterned mask layer exposes portions of the surface of the insulation layer through a plurality of holes. The portions of the plurality of holes are filled with a metal material comprising copper to form elongated columns of the metal material. The elongated columns of the metal material have a sidewall surface. The patterned mask layer is removed to expose the sidewall surface of the elongated columns of the metal material. A protection layer is formed on the exposed sidewall surface of the elongated columns of the metal material.

摘要翻译： 形成与半导体晶片的电连接的方法。提供了包括绝缘层的半导体晶片。绝缘层具有表面。在绝缘层的表面上形成图案化掩模层。图案化掩模层通过多个孔暴露绝缘层的表面的部分。多个孔的部分填充有包含铜的金属材料以形成细长的金属材料柱。金属材料的细长柱具有侧壁表面。去除图案化的掩模层以暴露金属材料的细长柱的侧壁表面。保护层形成在金属材料的细长柱的暴露的侧壁表面上。

25.

发明申请
Interconnect Structures Having Lead-Free Solder Bumps 有权
标题翻译：具有无铅焊料碰撞的互连结构

公开(公告)号：US20100314756A1

公开(公告)日：2010-12-16

申请号：US12537001

申请日：2009-08-06

申请人： Mirng-Ji Lii , Chien-Hsiun Lee , Chen-Hua Yu , Shin-Puu Jeng , Chin-Yu Ku

发明人： Mirng-Ji Lii , Chien-Hsiun Lee , Chen-Hua Yu , Shin-Puu Jeng , Chin-Yu Ku

IPC分类号： H01L23/498

CPC分类号： H01L24/05 , H01L24/12 , H01L24/16 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05572 , H01L2224/0558 , H01L2224/056 , H01L2224/13023 , H01L2224/131 , H01L2224/29111 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/05552

摘要： An integrated circuit structure includes a semiconductor substrate, and a polyimide layer over the semiconductor substrate. An under-bump-metallurgy (UBM) has a first portion over the polyimide layer, and a second portion level with the polyimide layer. A first solder bump and a second solder bump are formed over the polyimide layer, with a pitch between the first solder bump and the second solder bump being no more than 150 μm. A width of the UBM equals one-half of the pitch plus a value greater than 5 μm.

摘要翻译： 集成电路结构包括半导体衬底和半导体衬底上的聚酰亚胺层。凸块下冶金（UBM）在聚酰亚胺层上具有第一部分，并且具有与聚酰亚胺层的第二部分水平。第一焊料凸块和第二焊料凸块形成在聚酰亚胺层上，第一焊料凸块和第二焊料凸块之间的间距不超过150μm。 UBM的宽度等于间距的一半加上大于5μm的值。

26.

发明授权
Package on package structures and methods for forming the same 有权
标题翻译：包装结构及其形成方法

公开(公告)号：US09219030B2

公开(公告)日：2015-12-22

申请号：US13526073

申请日：2012-06-18

申请人： Chen-Hua Yu , Mirng-Ji Lii , Chung-Shi Liu , Meng-Tse Chen , Wei-Hung Lin , Ming-Da Cheng

发明人： Chen-Hua Yu , Mirng-Ji Lii , Chung-Shi Liu , Meng-Tse Chen , Wei-Hung Lin , Ming-Da Cheng

IPC分类号： H01L23/498 , H01L21/78 , H01L23/00 , H01L21/56 , H01L25/10 , H01L23/31 , H01L25/03 , H01L25/00

CPC分类号： H01L24/05 , B23K35/001 , B23K35/0222 , B23K35/22 , B23K35/262 , B23K35/3613 , H01L21/561 , H01L23/3135 , H01L23/3178 , H01L23/498 , H01L23/49816 , H01L24/08 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/03 , H01L25/0652 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05184 , H01L2224/05572 , H01L2224/05611 , H01L2224/06181 , H01L2224/08113 , H01L2224/1184 , H01L2224/13005 , H01L2224/13014 , H01L2224/13022 , H01L2224/13023 , H01L2224/13026 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/1355 , H01L2224/13561 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13666 , H01L2224/1412 , H01L2224/14181 , H01L2224/16104 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17051 , H01L2224/48091 , H01L2224/48227 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/381 , H01L2924/3841 , H01L2924/00 , H01L2224/81 , H01L2924/01047 , H01L2924/01029 , H01L2924/01083 , H01L2924/013 , H01L2924/206 , H01L2224/05552 , H01L2924/00012

摘要： The described embodiments of mechanisms of forming a package on package (PoP) structure involve bonding with connectors with non-solder metal balls to a packaging substrate. The non-solder metal balls may include a solder coating layer. The connectors with non-solder metal balls can maintain substantially the shape of the connectors and control the height of the bonding structures between upper and lower packages. The connectors with non-solder metal balls are also less likely to result in bridging between connectors or disconnection (or cold joint) of bonded connectors. As a result, the pitch of the connectors with non-solder metal balls can be kept small.

摘要翻译： 形成封装封装（PoP）结构的机构的所述实施例包括将具有非焊料金属球的连接器与包装衬底结合。非焊接金属球可以包括焊料涂层。具有非焊接金属球的连接器可以基本保持连接器的形状并控制上部和下部封装之间的结合结构的高度。具有非焊接金属球的连接器也不太可能导致连接器之间的桥接或接合连接器的断开（或冷接头）。结果，可以将具有非焊接金属球的连接器的间距保持较小。

27.

发明授权
Package-on-package (PoP) structure having at least one package comprising one die being disposed in a core material between first and second surfaces of the core material 有权
标题翻译：封装封装（PoP）结构，其具有至少一个封装，其包括一个管芯，其设置在芯材料的芯材料的第一和第二表面之间

公开(公告)号：US09123763B2

公开(公告)日：2015-09-01

申请号：US13271952

申请日：2011-10-12

申请人： Chen-Hua Yu , Chung-Shi Liu , Mirng-Ji Lii , Ming-Da Cheng , Chih-Wei Lin

发明人： Chen-Hua Yu , Chung-Shi Liu , Mirng-Ji Lii , Ming-Da Cheng , Chih-Wei Lin

IPC分类号： H01L23/48 , H01L21/683 , H01L23/538 , H01L21/56 , H01L25/10 , H01L21/36 , H01L23/31 , H01L21/48 , H01L23/00 , H05K1/18 , H01L23/498

CPC分类号： H01L25/50 , H01L21/31051 , H01L21/4846 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L21/76802 , H01L21/76819 , H01L21/76877 , H01L21/76898 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5383 , H01L24/16 , H01L24/19 , H01L24/32 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2224/04105 , H01L2224/12105 , H01L2224/13082 , H01L2224/131 , H01L2224/16225 , H01L2224/16237 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/73204 , H01L2224/73253 , H01L2224/73267 , H01L2224/81005 , H01L2224/81191 , H01L2224/81815 , H01L2224/83104 , H01L2225/06513 , H01L2225/06548 , H01L2225/06555 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/12042 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H05K1/185 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/0665 , H01L2224/48

摘要： A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL.

摘要翻译： 封装封装（PoP）结构包括第一封装和第二封装。第一包装包括第一模具，第二模具和芯材料。芯材料具有第一表面和第二表面。第一再分配层（RDL）位于第一表面上，第二RDL位于第二表面上。第一模具设置在第一表面和第二表面之间的芯材料中。第二管芯耦合到第一RDL和第二RDL之一。第二包装包括第三管芯和插入件。插入器具有第一侧和第二侧。第三裸片耦合到插入器的第二侧。第一封装通过耦合到插入件的第二侧和第一RDL的第一电连接器耦合到第二封装。

28.

发明授权
Bump structure with barrier layer on post-passivation interconnect 有权
标题翻译：在钝化后互连上具有阻挡层的凹凸结构

公开(公告)号：US08716858B2

公开(公告)日：2014-05-06

申请号：US13167946

申请日：2011-06-24

申请人： Chen-Fa Lu , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Chen-Fa Lu , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L23/48

CPC分类号： H01L24/03 , H01L23/3114 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05571 , H01L2224/05583 , H01L2224/05609 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/11334 , H01L2224/11849 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16147 , H01L2224/16237 , H01L2224/81191 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/8191 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2924/01029 , H01L2924/00012 , H01L2924/01082 , H01L2924/01046 , H01L2924/01079 , H01L2924/01047 , H01L2924/014 , H01L2924/00 , H01L2224/05552

摘要： A semiconductor device includes a barrier layer between a solder bump and a post-passivation interconnect (PPI) layer. The barrier layer is formed of at least one of an electroless nickel (Ni) layer, an electroless palladium (Pd) layer or an immersion gold (Au) layer.

摘要翻译： 半导体器件包括在焊料凸块和钝化后互连（PPI）层之间的阻挡层。阻挡层由无电镀镍（Ni）层，无电解钯（Pd）层或浸金（Au）层中的至少一种形成。

29.

发明授权
UBM etching methods for eliminating undercut 有权
标题翻译：用于消除底切的UBM蚀刻方法

公开(公告)号：US08501613B2

公开(公告)日：2013-08-06

申请号：US13178276

申请日：2011-07-07

申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00

摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.

摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。在UBM层的开口和第二部分上形成金属凸块。然后取下面具。执行激光去除以去除UBM层的第一部分的一部分并形成UBM。