摘要:
A circuit device includes an insulating base provided with a resin layer mixed with a fibrous filler, bumps provided in the insulating base and functioning as electrodes for connection, a semiconductor device that is flip-chip mounted, and an underfill filling a gap between the semiconductor device and the insulating base. By allowing the fibrous filler projecting through the top surface of the resin layer to be in contact with the underfill, strength of adhesion between the underfill and the insulating base is improved.
摘要:
A semiconductor module is of a structure such that a wiring layer, an insulating resin layer and a semiconductor device are stacked in this order by bonding them together with compression. In the wiring layer, bump electrodes each having a base and a tip portion are provided in positions corresponding respectively to device electrodes of the semiconductor device. The bump electrodes penetrate the insulating resin layer and are electrically coupled to the corresponding device electrodes.
摘要:
A device mounting board is provided with: a substrate structural unit including a substrate made of a composition containing amorphous silicon, a first adhesive layer provided on one of the main surfaces of the substrate, and a second adhesive layer provided on the other main surface of the substrate; a first wiring layer provided on the main surface of the first adhesive layer on the opposite side from the substrate; a second wiring layer provided on the main surface of the second adhesive layer on the opposite side from the substrate; and a via conductor, which is provided in a via hole that penetrates the substrate, the first adhesive layer, and the second adhesive layer, which electrically connects the first wiring layer and the second wiring layer.
摘要:
An advantage of the present invention is to suppress moisture infiltrating from a pad electrode portion from spreading over the surface of a wiring pattern and improve the reliability of a packaging board. The wiring pattern of the packaging board is formed on an insulating substrate and includes a wiring region, an electrode region (pad electrode) connected with a semiconductor device, and a boundary region provided between the wiring region and the electrode region. A gold plating layer is provided on the surface of the electrode region of the wiring pattern. The top surface of the boundary region of the wiring pattern is so formed as to be dented from the top surface of the wiring region of the wiring pattern, and there is provided a stepped portion in the boundary region. A solder resist is formed in such a manner as to cover part of the gold plating layer and the wiring pattern corresponding to the boundary region and the wiring region, and the solder resist has a predetermined opening through which to connect to the semiconductor device. A conductive member is connected to the gold plating layer in the electrode region, and a molded resin layer seals the entire semiconductor module.
摘要:
In a circuit device where a wiring layer, an insulating resin and a circuit element are stacked together in such a manner as to embed a bump structure into the insulating resin, the connection reliability between the bump structure and the circuit element is enhanced.A circuit device (10) has a structure where a wiring layer (20), an insulating resin layer (30) and a circuit element (40) are stacked in this order by a pressure bonding. The wiring layer (20) is provided with bump electrodes (22) in positions that correspond respectively to element electrodes of a circuit element (40). The insulating resin layer (30) is formed of a material that develops plastic flow when pressurized. The bump electrode (22) penetrates the insulating resin layer (30) and is electrically connected to a corresponding element electrode (42).
摘要:
A circuit device includes a metal substrate; and a plurality of circuit elements, mounted on the metal substrate, which electrically connects to the metal substrate. The metal substrate is made of a copper plate of high thermal conductivity. The metal substrate is demarcated into a plurality of sections by insulating films added with a filler for enhancing the thermal conductivity in resin. The circuit elements, which have respective independent operating potentials on a side of the metal substrate of the circuit elements, are respectively provided on separated copper plates.
摘要:
A technique for reducing the size of a semiconductor device is provided. A semiconductor device comprises a base, a semiconductor chip, a chip component, an insulating base, a wiring pattern, a via plug, an external lead-out electrode, a recess, and a resin. The insulating base has a multi-layer structure formed by laminating a plurality of insulator films. The semiconductor chip and the chip component are mounted on the base and embedded in the insulating base. A recess is formed on the surface of the semiconductor device and reaches down to any of wiring conductor layers. The semiconductor chip and the chip component are mounted on the recess.
摘要:
A semiconductor apparatus includes a first conductive film and a second conductive film provided on respective sides of an insulating resin film. A circuit element is mounted on the second conductive film. The circuit element is electrically connected to the second conductive film. The second conductive film is provided to cover a via plug. The via plug is tapered with a progressively smaller diameter toward the second conductive film and away from the first conductive film.
摘要:
A semiconductor module manufacturing method includes a step of bonding a semiconductor wafer, which has a plurality of semiconductor elements each of which has an element electrode formed thereon, on an expansible first insulating resin layer; a step of dicing the semiconductor wafer; a step of expanding the first insulating resin layer to widen a gap between semiconductor elements; a pressure-bonding step of pressure-bonding a metal plate whereupon an electrode is arranged and the semiconductor elements with the widened gaps in between, by having a second insulating resin layer in between, and electrically connecting the electrode and the element electrodes; a step of forming a wiring layer which corresponds to each semiconductor element by selectively removing the metal plate and forming a plurality of semiconductor modules connected by the first insulating resin layer and the second insulating resin layer; and a step of separating the semiconductor modules by cutting the first insulating resin layer and the second insulating resin layer.
摘要:
Multiple semiconductor device components and passive device components fixed to a substrate are embedded within an electroconductive-film/insulating-resin-film structure, and are thermally bonded to an insulating resin film.