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公开(公告)号：WO2012071487A2
公开(公告)日：2012-05-31
申请号：PCT/US2011/061993
申请日：2011-11-23
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED , FENG, Chien-te , LIN, Shih-chin
发明人： FENG, Chien-te , LIN, Shih-chin
CPC分类号： H01L24/32 , H01L21/563 , H01L23/481 , H01L23/4985 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/13009 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16237 , H01L2224/29339 , H01L2224/32225 , H01L2224/32237 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/81409 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81418 , H01L2224/8142 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81457 , H01L2224/8146 , H01L2224/81463 , H01L2224/81464 , H01L2224/81469 , H01L2224/81473 , H01L2224/81476 , H01L2224/81478 , H01L2224/83385 , H01L2224/85409 , H01L2224/85411 , H01L2224/85413 , H01L2224/85416 , H01L2224/85418 , H01L2224/8542 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85457 , H01L2224/8546 , H01L2224/85463 , H01L2224/85464 , H01L2224/85469 , H01L2224/85473 , H01L2224/85476 , H01L2224/85478 , H01L2924/00014 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit (IC) device (100) includes a polymer substrate (110) having a topside surface (111) and a bottomside surface (112) opposite the topside surface, a plurality of through- holes (113) that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads (119) on the bottomside surface positioned over the plurality of through-holes. At least one IC die (120) having an active topside (121) including a plurality of bond pads (124) and a second side (122) is affixed to the topside surface. Bonding features (118) are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.
摘要翻译： 集成电路（IC）装置（100）包括具有顶侧表面（111）和与顶侧表面相对的底部表面（112）的聚合物基板（110），从顶侧延伸的多个通孔（113） 表面到底部表面，以及位于多个通孔上的底部表面上的多个底部金属焊盘（119）。 具有包括多个接合焊盘（124）和第二侧（122）的有源顶侧（121）的至少一个IC管芯（120）固定到顶侧表面。 接合特征（118）耦合到多个接合焊盘，用于将多个接合焊盘中的相应接合焊盘连接到多个底部金属焊盘。 接合特征延伸到通孔中以接触底部金属焊盘。
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公开(公告)号：WO2016146323A3
公开(公告)日：2016-11-03
申请号：PCT/EP2016053169
申请日：2016-02-15
发明人： LÜDEKE HEINRICH , GEELHAAR RICARDO
IPC分类号： H01L21/60 , B23K26/20 , H01L23/488
CPC分类号： H01L24/40 , B23K26/20 , H01L24/05 , H01L24/16 , H01L24/37 , H01L24/41 , H01L24/73 , H01L24/77 , H01L24/81 , H01L24/84 , H01L2224/04034 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/16225 , H01L2224/37026 , H01L2224/37147 , H01L2224/40091 , H01L2224/40225 , H01L2224/40491 , H01L2224/40992 , H01L2224/40997 , H01L2224/4112 , H01L2224/73255 , H01L2224/77263 , H01L2224/77281 , H01L2224/77601 , H01L2224/77611 , H01L2224/77704 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/84214 , H01L2224/84424 , H01L2224/84439 , H01L2224/84444 , H01L2224/84447 , H01L2224/84455 , H01L2224/84464 , H01L2224/8484 , H01L2224/8485 , H01L2224/84986 , H01L2924/00014 , H01L2924/10253 , H01L2924/15787 , H01L2924/1579 , H01L2224/13099
摘要： The invention relates to a chip arrangement (10) and a method for forming a contact connection (11) between a chip (18), in particular a power transistor or the like, and a conductor material strip (14), said conductor material strip being formed on a non-conductive substrate (12) and the chip being arranged on the substrate or on a conductor material strip (15). A silver paste (29) or copper paste is applied to a chip contact surface (25) of the chip and of the conductor material strip (28), a contact conductor (30) is dipped into the silver paste or the copper paste on the chip contact surface and into the silver paste or the copper paste on the conductor material strip, and a solvent contained in the silver paste or the copper paste is at least partially evaporated by heating. The silver paste or the copper paste is then sintered by means of laser energy, thereby forming the contact connection.
摘要翻译： 本发明涉及的模具组件（10）以及用于形成管芯之间的接触连接（11）（18），特别是功率晶体管等的方法，和印刷材料幅材（14），其中形成有非导电性基板上的导体材料带（12）， 其中在基板上的芯片或在芯片和导体材料幅（28），将银膏（29）或铜膏施加的芯片接触面（25），每个外壳的印刷材料带（15）布置，其中，在所述接触导体（30） 银膏或铜膏浸渍于芯片接触表面和在银膏或铜膏印刷材料幅，其特征在于，包含在银膏或铜膏的溶剂中，通过加热蒸发，至少部分地，其中，所述接触连接是由银膏或铜膏形成在 通过激光能量烧结。
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公开(公告)号：WO2012071487A3
公开(公告)日：2012-07-26
申请号：PCT/US2011061993
申请日：2011-11-23
发明人： FENG CHIEN-TE , LIN SHIH-CHIN
CPC分类号： H01L24/32 , H01L21/563 , H01L23/481 , H01L23/4985 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/13009 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16237 , H01L2224/29339 , H01L2224/32225 , H01L2224/32237 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/81409 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81418 , H01L2224/8142 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81457 , H01L2224/8146 , H01L2224/81463 , H01L2224/81464 , H01L2224/81469 , H01L2224/81473 , H01L2224/81476 , H01L2224/81478 , H01L2224/83385 , H01L2224/85409 , H01L2224/85411 , H01L2224/85413 , H01L2224/85416 , H01L2224/85418 , H01L2224/8542 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85457 , H01L2224/8546 , H01L2224/85463 , H01L2224/85464 , H01L2224/85469 , H01L2224/85473 , H01L2224/85476 , H01L2224/85478 , H01L2924/00014 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit (IC) device (100) includes a polymer substrate (110) having a topside surface (111) and a bottomside surface (112) opposite the topside surface, a plurality of through- holes (113) that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads (119) on the bottomside surface positioned over the plurality of through-holes. At least one IC die (120) having an active topside (121) including a plurality of bond pads (124) and a second side (122) is affixed to the topside surface. Bonding features (118) are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.
摘要翻译： 集成电路（IC）装置（100）包括具有顶侧表面（111）和与顶侧表面相对的底侧表面（112）的聚合物基板（110），多个通孔（113），所述通孔从顶侧 以及位于所述多个通孔之上的底侧表面上的多个底部金属焊盘（119）。 具有包括多个接合焊盘（124）和第二侧（122）的有源顶侧（121）的至少一个IC管芯（120）被固定到顶侧表面。 结合特征（118）耦合到所述多个接合焊盘，用于将所述多个接合焊盘中的相应接合焊盘耦合到所述多个底部金属焊盘。 结合特征延伸到通孔中以接触底部金属焊盘。
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公开(公告)号：WO2008041484A1
公开(公告)日：2008-04-10
申请号：PCT/JP2007/068184
申请日：2007-09-19
申请人： アルプス電気株式会社 , 長野 真一 , 吉田 信
CPC分类号： H01R43/0214 , H01L23/49811 , H01L24/12 , H01L24/16 , H01L24/81 , H01L24/83 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/81201 , H01L2224/81206 , H01L2224/81222 , H01L2224/81234 , H01L2224/81385 , H01L2224/81464 , H01L2224/81801 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/19042 , H01R13/2421 , H05K3/326 , H05K3/4015 , H05K3/42 , H05K2201/0311 , H05K2201/0367 , H05K2201/09481 , H05K2201/10265 , H05K2201/10378 , H05K2201/10734 , Y10T156/10 , H01L2924/01083 , H01L2924/00014 , H01L2224/83851 , H01L2924/00
摘要： 【課題】 ＩＣパッケージなどの電子部品の接続電極との間の接合強度を高める弾性接触子および金属端子間の接合方法を提供する。 【解決手段】 ハンダで形成された電子部品側の接続電極４２と弾性接触子２０の先端部２２ｂとが接触部Ｏで接触している。弾性接触子２０は先端部２２ｂに抵抗層が形成されており、先端部２２ｂが誘導コイル５０の隙間５１内に配置されている。前記誘導コイル５０に所定の高周波電流を流すと、前記抵抗部が電磁誘導によって発熱し、接続電極４２のハンダが溶けて前記弾性接触子２０の先端部２２ｂに流れ込むため、弾性接触子２０の先端部２２ｂと接続電極４２との間を、前記接触部Ｏの一点で強固に接合することができる。
摘要翻译： 为了提供一种用于提高与诸如IC封装的电子部件的连接电极的接合强度的弹性接触，并提供金属端子之间的接合方法。 解决问题的手段由电子部件侧的焊料形成的连接电极（42）与接触部（O）的弹性接触部（20）的前端部（22b）接触。 电阻层形成在弹性触头（20）的前端部（22b）上，前端部（22b）配置在感应线圈（50）的间隙（51）上。 当允许规定的高频电流在感应线圈（50）中流动时，电阻部分由于电磁感应而产生热量，并且连接电极（42）的焊料熔化并流入前端部（22b）的前端部 弹性接触件（20）。 因此，弹性接触件（20）的前端部分（22b）和连接电极（42）在接触部分（O）的一个点牢固地结合。
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公开(公告)号：WO2017068997A1
公开(公告)日：2017-04-27
申请号：PCT/JP2016/079894
申请日：2016-10-07
发明人： WAKIYAMA Satoru , SHIMIZU Kan , HAYASHI Toshihiko , NAKAMURA Takuya , JYO Naoki
IPC分类号： H01L23/485 , H01L21/60 , H01L27/146
CPC分类号： H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/48 , H01L24/81 , H01L27/14634 , H01L27/14636 , H01L2224/0239 , H01L2224/0345 , H01L2224/0346 , H01L2224/0361 , H01L2224/03616 , H01L2224/03828 , H01L2224/039 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05082 , H01L2224/05157 , H01L2224/05181 , H01L2224/05187 , H01L2224/05547 , H01L2224/05548 , H01L2224/05571 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0603 , H01L2224/06181 , H01L2224/131 , H01L2224/13111 , H01L2224/1403 , H01L2224/16145 , H01L2224/16146 , H01L2224/48463 , H01L2224/73257 , H01L2224/81011 , H01L2224/81022 , H01L2224/81065 , H01L2224/8114 , H01L2224/81191 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81469 , H01L2224/8182 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/01083 , H01L2924/01029 , H01L2924/01049 , H01L2924/00012 , H01L2224/45099
摘要： An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.
摘要翻译： 成像装置包括第一半导体元件，该第一半导体元件包括至少一个具有凹形形状的凸块焊盘。 所述至少一个凸块焊盘包括在第一金属层上的第一金属层和第二金属层。 成像装置包括具有至少一个电极的第二半导体元件。 成像装置包括将至少一个凸块焊盘电连接到至少一个电极的微凸块。 微凸块包括第二金属层的扩散部分，第一半导体元件或第二半导体元件包括像素单元。
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6.发明申请DEVICE PACKAGING WITH SUBSTRATES HAVING EMBEDDED LINES AND METAL DEFINED PADS 审中-公开具有嵌入线和金属定义垫的衬底的器件封装
公开(公告)号：WO2012087556A3
公开(公告)日：2012-10-04
申请号：PCT/US2011063409
申请日：2011-12-06
申请人： INTEL CORP , HLAD MARK S , SALAMA ISLAM A , ROY MIHIR K , WU TAO , LIU YUELI , LEE KYU OH
发明人： HLAD MARK S , SALAMA ISLAM A , ROY MIHIR K , WU TAO , LIU YUELI , LEE KYU OH
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/563 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L23/49866 , H01L23/50 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/1112 , H01L2224/11462 , H01L2224/11464 , H01L2224/11466 , H01L2224/119 , H01L2224/13005 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1601 , H01L2224/16225 , H01L2224/16238 , H01L2224/165 , H01L2224/2919 , H01L2224/73204 , H01L2224/81121 , H01L2224/81191 , H01L2224/81444 , H01L2224/81455 , H01L2224/81464 , H01L2224/81815 , H01L2224/831 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01079 , H01L2924/01103 , H01L2924/01108 , H01L2924/12042 , H01L2924/14 , H01L2924/15321 , H01L2924/2064 , H01L2924/37001 , H01L2924/3841 , H05K1/113 , H05K3/107 , H05K3/3436 , H05K3/421 , H01L2924/00014 , H01L2924/00
摘要： Package substrates enabling reduced bump pitches and package assemblies thereof. Surface-level metal features are embedded in a surface-level dielectric layer with surface finish protruding from a top surface of the surface-level dielectric for assembly, without solder resist, to an IC chip having soldered connection points. Package substrates are fabricated to enable multiple levels of trace routing with each trace routing level capable of reduced minimum trace width and spacing.
摘要翻译： 封装衬底，能够减少凸起间距和封装组件。 表面级金属特征嵌入表面级电介质层中，其表面光洁度从表面电介质的顶表面突出，用于组装而无阻焊，具有焊接连接点的IC芯片。 制造封装衬底以实现多级跟踪路由，每个跟踪路由级别能够减少最小迹线宽度和间距。
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公开(公告)号：WO2009085409A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/082975
申请日：2008-11-10
发明人： LIANG, Steve, X.
CPC分类号： H01L24/14 , B81B7/0077 , B81C2203/0109 , B81C2203/0118 , B81C2203/019 , H01L23/293 , H01L23/3121 , H01L23/3142 , H01L23/315 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05144 , H01L2224/10135 , H01L2224/1134 , H01L2224/11462 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/81207 , H01L2224/814 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81464 , H01L2224/8183 , H01L2924/00013 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H03H9/0523 , H03H9/059 , H01L2924/00014 , H01L2924/01014 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A flip chip semiconductor packaging device and method that incorporates in situ formation of cavities underneath selected portions of a die during a flip chip die bonding process. A method of flip chip semiconductor component packaging includes providing a die having a first surface, forming a barrier on first surface of the die, the barrier at least partially surrounding a designated location on the first surface of the die, bonding the die to a substrate in a flip chip configuration, and flowing molding compound over the die and over at least a portion of the substrate. Bonding the die to the substrate includes causing contact between the barrier and the substrate such that flow of the molding compound is blocked by the barrier to provide a cavity between the die and the substrate, the cavity being proximate the designated location on the first surface of the die.
摘要翻译： 一种倒装芯片半导体封装器件和方法，其在倒装晶片管芯接合工艺期间并入在管芯的选定部分的原位形成腔体。 一种倒装芯片半导体部件封装的方法包括：提供具有第一表面的管芯，在管芯的第一表面上形成阻挡层，所述阻挡层至少部分地围绕在管芯的第一表面上的指定位置，将管芯结合到衬底 在倒装芯片配置中，并且在模具上方并且在衬底的至少一部分上方流动模制化合物。 将管芯结合到衬底包括引起阻挡层和衬底之间的接触，使得模制化合物的流动被阻挡物阻挡以在管芯和衬底之间提供空腔，腔体在第一表面的指定位置附近 死了
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公开(公告)号：WO2015053356A1
公开(公告)日：2015-04-16
申请号：PCT/JP2014/077040
申请日：2014-10-09
申请人： 学校法人早稲田大学
发明人： 巽 宏平
CPC分类号： H01L24/10 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/75 , H01L24/76 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/84 , H01L24/85 , H01L2224/0345 , H01L2224/03464 , H01L2224/04 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05173 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05673 , H01L2224/11334 , H01L2224/1134 , H01L2224/13012 , H01L2224/13017 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13294 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13411 , H01L2224/136 , H01L2224/13611 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/24225 , H01L2224/24245 , H01L2224/245 , H01L2224/2499 , H01L2224/29012 , H01L2224/29017 , H01L2224/29147 , H01L2224/32227 , H01L2224/32245 , H01L2224/37147 , H01L2224/3716 , H01L2224/40095 , H01L2224/40227 , H01L2224/40991 , H01L2224/40996 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48873 , H01L2224/48991 , H01L2224/48996 , H01L2224/73255 , H01L2224/73265 , H01L2224/73273 , H01L2224/73277 , H01L2224/75754 , H01L2224/76754 , H01L2224/81002 , H01L2224/81205 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81473 , H01L2224/81815 , H01L2224/8184 , H01L2224/81901 , H01L2224/8192 , H01L2224/82002 , H01L2224/82101 , H01L2224/82399 , H01L2224/83002 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83464 , H01L2224/83473 , H01L2224/83815 , H01L2224/8384 , H01L2224/83901 , H01L2224/8392 , H01L2224/8492 , H01L2224/85205 , H01L2224/85447 , H01L2224/8592 , H01L2224/9201 , H01L2924/00011 , H01L2924/3656 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01028 , H01L2924/01074 , H01L2924/01023 , H01L2924/014 , H01L2924/01029 , H01L2924/01047 , H01L2924/01079 , H01L2924/01046 , H01L2924/01045 , H01L2224/18 , H01L2224/24 , H01L2224/82 , H01L2224/83205
摘要： 電気回路の電極間を点状又は線状に接触させた状態でメッキにより接続することで、隙間のない密着した接続を可能とする電極接続方法等を提供する。 電気的に接続される電気回路の複数の電極間の少なくとも一部を直接又は間接的に接触させ、当該接触部分の周辺にメッキ液が流通した状態で前記電極間をメッキして接続するものである。また、前記接触部分は線状又は点状に保持されているものである。さらに、メッキを行う材料として、ニッケル若しくはニッケル合金、又は、銅もしくは銅合金を用い、接続される電極の表面の材料が、ニッケル若しくはニッケル合金、銅若しくは銅合金、金若しくは金合金、銀若しくは銀合金、又は、パラジウム若しくはパラジウム合金とするものである。
摘要翻译： 提供了一种电极连接方法等，其可以通过电镀连接而紧密连接而不会留下间隙，而电路中的电极以点或线性图案彼此接触。 在电路中的多个电连接的电极之间的间隔的至少一部分中直接或间接地进行接触，并且在电镀液体围绕接触部的周边流动的同时电镀并连接电极之间的间隔。 此外，接触部分保持线性或点阵图案。 此外，镍或镍合金或铜或铜合金用作进行电镀的材料，而要连接的电极表面的材料是镍或镍合金，铜或铜合金，金或 金合金，银或银合金，或钯或钯合金。
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公开(公告)号：WO2012026091A1
公开(公告)日：2012-03-01
申请号：PCT/JP2011/004598
申请日：2011-08-16
申请人： 住友ベークライト株式会社 , 和布浦 徹 , 二階堂 美奈
发明人： 和布浦 徹
IPC分类号： H01L21/60 , H01L21/56 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/91 , H01L21/56 , H01L23/293 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/1132 , H01L2224/11334 , H01L2224/1146 , H01L2224/13101 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16157 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29387 , H01L2224/32157 , H01L2224/73204 , H01L2224/75251 , H01L2224/75252 , H01L2224/75302 , H01L2224/7598 , H01L2224/75981 , H01L2224/75985 , H01L2224/81075 , H01L2224/81091 , H01L2224/81193 , H01L2224/81204 , H01L2224/81424 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81815 , H01L2224/83075 , H01L2224/8309 , H01L2224/83091 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83204 , H01L2224/83855 , H01L2224/83986 , H01L2224/97 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/15787 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/3512
摘要： 積層体４を前記熱硬化性樹脂の硬化温度未満で加熱しながら、脱気を行い、減圧下で挟圧部材（５３）で積層体を挟んで積層体を積層方向に沿って加圧する第一工程と、積層体を前記第一工程よりも高い温度であり、前記熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧以上の雰囲気下で、挟圧部材（５３）で積層体を挟んで前記積層体を積層方向に沿って加圧し、第一端子と第二端子とを接触させる第二工程とを実施する。これにより、電子装置の生産性を向上させることができる。
摘要翻译： 为了能够提高电子器件的产量，进行以下步骤：第一步骤，其中在将层压体（4）加热到低于热固性树脂的固化温度的温度的同时，抽空空气， 在减小的空气压力下，层压体被夹紧构件（53）夹持并在层压方向上施加压力; 第二步骤，在将叠层体加热至高于第一步骤的温度并低于上述热固性树脂的固化温度的温度的同时，在大于或等于大气压的空气压力下，将层压体夹在 夹紧构件（53），并且在层叠方向上施加压力，从而使第一端子和第二端子彼此接触。
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公开(公告)号：WO2007142175A1
公开(公告)日：2007-12-13
申请号：PCT/JP2007/061266
申请日：2007-06-04
申请人： 田中貴金属工業株式会社 , 小柏 俊典 , 宮入 正幸
CPC分类号： H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/0558 , H01L2224/05669 , H01L2224/1132 , H01L2224/11416 , H01L2224/11505 , H01L2224/1155 , H01L2224/1329 , H01L2224/13339 , H01L2224/13344 , H01L2224/13364 , H01L2224/13369 , H01L2224/16245 , H01L2224/27505 , H01L2224/29339 , H01L2224/29344 , H01L2224/29364 , H01L2224/29369 , H01L2224/75252 , H01L2224/81048 , H01L2224/81097 , H01L2224/81191 , H01L2224/81203 , H01L2224/81207 , H01L2224/81464 , H01L2224/8184 , H01L2224/83048 , H01L2224/83191 , H01L2224/83207 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/351 , H01L2224/05644 , H01L2224/13099 , H01L2224/743 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/01203 , H01L2224/80097 , H01L2924/20108 , H01L2924/20103
摘要： A method by which, in semiconductor chip die bonding or the like, a bonded part having sufficient bond strength can be obtained at a relatively low temperature. A metallic paste (20) comprising one or more metal powders selected among a gold powder, silver powder, platinum powder, and palladium powder having a purity of 99.9 wt.% or higher and an average particle diameter of 0.005-1.0 µm and an organic solvent was applied to a semiconductor chip (10). The metallic paste (20) applied was vacuum-dried in a drying vessel. This chip was heated at 230°C for 30 minutes to sinter the metallic paste and obtain a metal-powder sinter (21). Subsequently, a nickel sheet (30) is put on the semiconductor chip (10) and bonded thereto by heating and pressing.
摘要翻译： 在半导体芯片芯片接合等中，可以在较低的温度下获得具有足够的接合强度的接合部分的方法。 一种金属膏（20），其包含选自金粉末，银粉，铂粉末和纯度为99.9重量％以上，平均粒径为0.005〜1.0微米的钯粉末的一种或多种金属粉末和有机物 溶剂施加到半导体芯片（10）。 将所施加的金属膏（20）在干燥容器中真空干燥。 将该芯片在230℃下加热30分钟以烧结金属膏，得到金属粉末烧结体（21）。 随后，将镍片（30）放在半导体芯片（10）上，通过加热和加压将其接合。
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