公开(公告)号：US08975117B2

公开(公告)日：2015-03-10

申请号：US13369059

申请日：2012-02-08

申请人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

发明人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/95 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32058 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/3512 ,  H01L2224/352 ,  H01L2224/37099 ,  H01L2224/37111 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37164 ,  H01L2224/37169 ,  H01L2224/37572 ,  H01L2224/376 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/37669 ,  H01L2224/40095 ,  H01L2224/40101 ,  H01L2224/40175 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40491 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/84464 ,  H01L2224/84469 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/9221 ,  H01L2224/92246 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37599

摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合​​。

公开(公告)号：US20130027113A1

公开(公告)日：2013-01-31

申请号：US13191891

申请日：2011-07-27

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel

IPC分类号： H03K17/56 ,  H01L25/07 ,  H01L21/98 ,  H01L23/538

CPC分类号： H01L24/73 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/4876 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/01028 ,  H01L2224/27 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/01023 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/01005

摘要： A semiconductor chip includes a power transistor circuit with a plurality of active transistor cells. A first load electrode and a control electrode are arranged on a first face of the semiconductor chip, wherein the first load electrode includes a first metal layer. A second load electrode is arranged on a second face of the semiconductor chip. A second metal layer is arranged over the first metal layer, wherein the second metal layer is electrically insulated from the power transistor circuit and the second metal layer is arranged over an area of the power transistor circuit that comprises at least one of the plurality of active transistor cells.

摘要翻译： 半导体芯片包括具有多个有源晶体管单元的功率晶体管电路。 第一负载电极和控制电极设置在半导体芯片的第一面上，其中第一负载电极包括第一金属层。 第二负载电极设置在半导体芯片的第二面上。 第二金属层布置在第一金属层上，其中第二金属层与功率晶体管电路电绝缘，并且第二金属层布置在功率晶体管电路的包括多个活性物质中的至少一个的区域 晶体管单元。

公开(公告)号：US20130200532A1

公开(公告)日：2013-08-08

申请号：US13369059

申请日：2012-02-08

申请人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

发明人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/95 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32058 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/3512 ,  H01L2224/352 ,  H01L2224/37099 ,  H01L2224/37111 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37164 ,  H01L2224/37169 ,  H01L2224/37572 ,  H01L2224/376 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/37669 ,  H01L2224/40095 ,  H01L2224/40101 ,  H01L2224/40175 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40491 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/84464 ,  H01L2224/84469 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/9221 ,  H01L2224/92246 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37599

摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合​​。

公开(公告)号：US20140063766A1

公开(公告)日：2014-03-06

申请号：US13602597

申请日：2012-09-04

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Schiess Klaus

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Schiess Klaus

IPC分类号： H01L23/495 ,  H05K1/18

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/467 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1301 ,  H01L2924/181 ,  H05K1/0209 ,  H05K1/0256 ,  H05K1/181 ,  H05K2201/2072 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Representative implementations of devices and techniques provide isolation between a carrier and a component mounted to the carrier. A multi-layer device having lateral elements provides electrical isolation at a preset isolation voltage while maintaining a preselected thermal conductivity between the component and the carrier.

摘要翻译： 设备和技术的代表性实现提供载体和安装到载体的部件之间的隔离。 具有侧向元件的多层器件在预设的隔离电压下提供电隔离，同时保持部件和载体之间的预选导热性。

公开(公告)号：US20140252577A1

公开(公告)日：2014-09-11

申请号：US13784923

申请日：2013-03-05

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L21/561 ,  H01L23/4334 ,  H01L23/49558 ,  H01L23/49562 ,  H01L23/49586 ,  H01L23/49861 ,  H01L24/19 ,  H01L24/20 ,  H01L24/89 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  Y10T29/49002 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00015

摘要： Various embodiments provide a chip carrier structure. The chip carrier structure may include a structured metallic chip carrier; encapsulating material at least partially filling the structure; wherein the main surfaces of the metallic chip carrier are free from the encapsulating material.

摘要翻译： 各种实施例提供了芯片载体结构。 芯片载体结构可以包括结构化的金属芯片载体; 封装材料至少部分地填充该结构; 其中金属芯片载体的主表面没有封装材料。

公开(公告)号：US08643176B2

公开(公告)日：2014-02-04

申请号：US13191891

申请日：2011-07-27

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel

IPC分类号： H01L23/66

CPC分类号： H01L24/73 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/4876 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/01028 ,  H01L2224/27 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/01023 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/01005

摘要： A semiconductor chip includes a power transistor circuit with a plurality of active transistor cells. A first load electrode and a control electrode are arranged on a first face of the semiconductor chip, wherein the first load electrode includes a first metal layer. A second load electrode is arranged on a second face of the semiconductor chip. A second metal layer is arranged over the first metal layer, wherein the second metal layer is electrically insulated from the power transistor circuit and the second metal layer is arranged over an area of the power transistor circuit that comprises at least one of the plurality of active transistor cells.

摘要翻译： 半导体芯片包括具有多个有源晶体管单元的功率晶体管电路。 第一负载电极和控制电极设置在半导体芯片的第一面上，其中第一负载电极包括第一金属层。 第二负载电极布置在半导体芯片的第二面上。 第二金属层布置在第一金属层上，其中第二金属层与功率晶体管电路电绝缘，并且第二金属层布置在功率晶体管电路的包括多个活性物质中的至少一个的区域 晶体管单元。

公开(公告)号：US20140008702A1

公开(公告)日：2014-01-09

申请号：US13544834

申请日：2012-07-09

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L29/772

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L29/2003 ,  H01L29/78 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85207 ,  H01L2224/85801 ,  H01L2224/8585 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012

摘要： In accordance with an embodiment of the present invention, a semiconductor package includes a first lead frame having a first die paddle, and a second lead frame, which has a second die paddle and a plurality of leads. The second die paddle is disposed over the first die paddle. A semiconductor chip is disposed over the second die paddle. The semiconductor chip has a plurality of contact regions on a first side facing the second lead frame. The plurality of contact regions is coupled to the plurality of leads.

摘要翻译： 根据本发明的实施例，半导体封装包括具有第一管芯焊盘的第一引线框架和具有第二管芯焊盘和多个引线的第二引线框架。 第二模板设置在第一模板上。 半导体芯片设置在第二裸片上。 半导体芯片在面向第二引线框架的第一面上具有多个接触区域。 多个接触区域耦合到多个引线。

公开(公告)号：US20130154123A1

公开(公告)日：2013-06-20

申请号：US13330703

申请日：2011-12-20

申请人： Yong Chern Poh ,  Sze Lin Celine Tan ,  Teck Sim Lee ,  Kean Cheong Lee ,  Ralf Otremba ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

发明人： Yong Chern Poh ,  Sze Lin Celine Tan ,  Teck Sim Lee ,  Kean Cheong Lee ,  Ralf Otremba ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/142 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2924/00014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In various embodiments, a semiconductor device may include: a carrier; a semiconductor chip disposed over a first side of the carrier; a layer stack disposed between the carrier and the semiconductor chip or over a second side of the carrier opposite the semiconductor chip, or both, the layer stack including at least a first electrically insulating layer, the first electrically insulating layer having a laminate having a first electrically insulating matrix material and a first mechanically stabilizing material embedded in the first electrically insulating matrix material.

摘要翻译： 在各种实施例中，半导体器件可以包括：载体; 设置在所述载体的第一侧上的半导体芯片; 布置在所述载体和所述半导体芯片之间或者在所述载体的与所述半导体芯片相对的第二侧或两者之间的层堆叠，所述层堆叠至少包括第一电绝缘层，所述第一电绝缘层具有层压体，所述层叠体具有第一 电绝缘基体材料和嵌入第一电绝缘基体材料中的第一机械稳定材料。

公开(公告)号：US09786584B2

公开(公告)日：2017-10-10

申请号：US13602597

申请日：2012-09-04

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H05K7/00 ,  H01L23/495 ,  H05K1/18 ,  H01L23/31 ,  H01L23/373 ,  H01L23/467 ,  H05K1/02

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/467 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1301 ,  H01L2924/181 ,  H05K1/0209 ,  H05K1/0256 ,  H05K1/181 ,  H05K2201/2072 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Representative implementations of devices and techniques provide isolation between a carrier and a component mounted to the carrier. A multi-layer device having lateral elements provides electrical isolation at a preset isolation voltage while maintaining a preselected thermal conductivity between the component and the carrier.

公开(公告)号：US09147628B2

公开(公告)日：2015-09-29

申请号：US13535052

申请日：2012-06-27

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L21/60 ,  H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L23/3135 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L24/83 ,  H01L24/85 ,  H01L24/96 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05684 ,  H01L2224/211 ,  H01L2224/24011 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/2518 ,  H01L2224/27318 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/40095 ,  H01L2224/40105 ,  H01L2224/40227 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45499 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/48476 ,  H01L2224/48499 ,  H01L2224/48611 ,  H01L2224/48618 ,  H01L2224/48624 ,  H01L2224/48638 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48684 ,  H01L2224/48711 ,  H01L2224/48718 ,  H01L2224/48724 ,  H01L2224/48738 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48784 ,  H01L2224/48811 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48838 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48884 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85815 ,  H01L2224/92136 ,  H01L2224/92137 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/01044 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0498 ,  H01L2924/0496 ,  H01L2924/0474 ,  H01L2924/0475 ,  H01L2924/0478 ,  H01L2924/0476 ,  H01L2924/0454 ,  H01L2924/0455 ,  H01L2924/0458 ,  H01L2924/0456 ,  H01L2924/00012 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/0105 ,  H01L2924/0509 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/0103 ,  H01L2924/01078 ,  H01L2924/0665 ,  H01L2924/01082 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2224/83205

摘要： In accordance with an embodiment of the present invention, a semiconductor device includes a leadframe having a plurality of leads and a die paddle and a semiconductor module attached to the die paddle of the leadframe. The semiconductor module includes a first semiconductor chip disposed in a first encapsulant. The semiconductor module has a plurality of contact pads coupled to the first semiconductor chip. The semiconductor device further includes a plurality of interconnects coupling the plurality of contact pads with the plurality of leads, and a second encapsulant disposed at the semiconductor module and the leadframe.

摘要翻译： 根据本发明的实施例，半导体器件包括具有多个引线和管芯焊盘的引线框架和连接到引线框架的管芯焊盘的半导体模块。 半导体模块包括设置在第一密封剂中的第一半导体芯片。 半导体模块具有耦合到第一半导体芯片的多个接触焊盘。 半导体器件还包括将多个接触焊盘与多个引线耦合的多个互连以及设置在半导体模块和引线框架处的第二密封剂。