公开(公告)号：WO2012004136A3

公开(公告)日：2012-03-01

申请号：PCT/EP2011060579

申请日：2011-06-23

Applicant: ATOTECH DEUTSCHLAND GMBH ,  MATEJAT KAI-JENS ,  LAMPRECHT SVEN ,  EWERT INGO

Inventor： MATEJAT KAI-JENS ,  LAMPRECHT SVEN ,  EWERT INGO

IPC: H01L21/48 ,  H01L23/498

CPC classification number: B23K31/02 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01061 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Described is a method of forming a solder alloy deposit on a substrate comprising the following steps i) provide a substrate including a surface bearing electrical circuitry that includes at least one inner layer contact pad, ii) form a solder mask layer that is placed on the substrate surface and patterned to expose the at least one contact area, iii) contact the entire substrate area including the solder mask layer and the at least one contact area with a solution suitable to provide a metal seed layer on the substrate surface, iv) form a structured resist layer on the metal seed layer, v) electroplate a first solder material layer containing tin onto the conductive layer, vi) electroplate a second solder material layer onto the first solder material layer, vii) remove the structured resist layer and etch away an amount of the metal seed layer sufficient to remove the metal seed layer from the solder mask layer area and reflow the substrate and in doing so form a solder alloy deposit from the metal seed layer, the first solder material layer and the second solder material layer.

Abstract translation: 描述了在衬底上形成焊料合金沉积物的方法，包括以下步骤：i）提供包括表面承载电路的衬底，该衬底包括至少一个内层接触焊盘，ii）形成放置在衬底上的焊料掩模层 衬底表面并图案化以暴露所述至少一个接触区域，iii）使包括焊料掩模层和至少一个接触区域的整个衬底区域与适于在衬底表面上提供金属种子层的溶液接触，iv）形成 金属种子层上的结构化抗蚀剂层，v）将含有锡的第一焊料材料层电镀到导电层上，vi）将第二焊料材料层电镀到第一焊料材料层上，vii）去除结构化抗蚀剂层并蚀刻掉 金属种子层的量足以从焊料掩模层区域除去金属种子层并回流衬底，并且这样形成焊料合金沉积物 从金属种子层，第一焊料层和第二焊料层。

公开(公告)号：WO2012009520A2

公开(公告)日：2012-01-19

申请号：PCT/US2011043987

申请日：2011-07-14

Applicant: QUALCOMM INC ,  CHANDRASEKARAN ARVIND ,  GU SHIQUN ,  HAU-RIEGE CHRISTINE S

Inventor： CHANDRASEKARAN ARVIND ,  GU SHIQUN ,  HAU-RIEGE CHRISTINE S

IPC: H01L21/60

CPC classification number: H01L24/81 ,  H01L21/76877 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1161 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2224/13099 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.

Abstract translation: 微型接头中的电迁移会导致微胶囊中的空隙，从而降低了包含微型电池的集成电路的使用寿命。 通过在焊料周围形成铜壳，可能会在微胶囊中增加电迁移寿命。 一个微型块的铜壳接触第二个微型块的铜壳，以封闭微型接头的焊料。 铜壳允许通过微型块的更高的电流密度。 因此，可以以更小的间距制造较小的微胶片，而不会发生电迁移的故障。 此外，铜壳减少了衬底上的微型接头之间的短路或桥接。

公开(公告)号：WO2010030474A1

公开(公告)日：2010-03-18

申请号：PCT/US2009/054313

申请日：2009-08-19

Applicant: MICRON TECHNOLOGY, INC. ,  FAY, Owen, R. ,  FARNWORTH, Warren, M. ,  HEMBREE, David, R.

Inventor： FAY, Owen, R. ,  FARNWORTH, Warren, M. ,  HEMBREE, David, R.

IPC: H01L25/065

CPC classification number: H01L23/5384 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/03444 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05017 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05551 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05611 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1161 ,  H01L2224/1162 ,  H01L2224/1182 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/11831 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13075 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13687 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81345 ,  H01L2224/81365 ,  H01L2224/81815 ,  H01L2224/81898 ,  H01L2224/831 ,  H01L2224/83141 ,  H01L2224/83193 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

Abstract: Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods are disclosed. A system in accordance with a particular embodiment includes a first semiconductor substrate having a first substrate material, and a penetrating structure carried by the first semiconductor substrate. The system further includes a second semiconductor substrate having a second substrate material with a preformed recess. The penetrating structure of the first semiconductor substrate is received in the recess of the second semiconductor substrate and is mechanically engaged with the recess and secured to the second semiconductor substrate.

Abstract translation: 公开了用于堆叠管芯的互连结构，包括贯穿硅通孔的穿透结构以及相关的系统和方法。 根据特定实施例的系统包括具有第一衬底材料的第一半导体衬底和由第一半导体衬底承载的穿透结构。 该系统还包括第二半导体衬底，该第二半导体衬底具有带有预制凹槽的第二衬底材料。 第一半导体衬底的穿透结构被容纳在第二半导体衬底的凹部中，并且与凹部机械地接合并固定到第二半导体衬底。

公开(公告)号：WO2015175554A2

公开(公告)日：2015-11-19

申请号：PCT/US2015/030410

申请日：2015-05-12

Applicant: INVENSAS CORPORATION

Inventor： KATKAR, Rajesh ,  UZOH, Cyprian, Emeka

IPC: H01L21/60

CPC classification number: H01L24/14 ,  B23K1/0016 ,  B23K3/0623 ,  B23K35/0244 ,  B23K35/0266 ,  B23K2201/40 ,  H01L21/02225 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/0391 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/051 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1405 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75253 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K1/115 ,  H05K1/144 ,  H05K3/341 ,  H05K2201/09572 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2224/81 ,  H01L2224/83

Abstract: In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion of a solder ball's surface is melted when the connection is formed on one structure and/or when the connection is being attached to another structure. In some embodiments, non-solder balls are joined by an intermediate solder ball (140i). A solder connection may be surrounded by a solder locking layer (1210) and may be recessed in a hole (1230) in that layer. Other features are also provided.

Abstract translation: 在一些实施例中，为了增加将不同结构与一个或多个焊球连接的焊料连接的高度与间距比，当在一个结构上形成连接时，和/或当 连接正在附加到另一个结构。 在一些实施例中，非焊球通过中间焊球（140i）连接。 焊料连接可以被焊料锁定层（1210）包围，并且可以凹入该层中的孔（1230）中。 还提供其他功能。

公开(公告)号：WO2013013204A2

公开(公告)日：2013-01-24

申请号：PCT/US2012/047722

申请日：2012-07-20

Applicant: QUALCOMM Incorporated ,  BAO, Zhongping ,  BURRELL, James D. ,  GU, Shiqun

Inventor： BAO, Zhongping ,  BURRELL, James D. ,  GU, Shiqun

IPC: H01L23/485

CPC classification number: H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05015 ,  H01L2224/05017 ,  H01L2224/05558 ,  H01L2224/056 ,  H01L2224/1146 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/141 ,  H01L2224/14142 ,  H01L2224/16057 ,  H01L2224/17051 ,  H01L2224/81211 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Pillars having a directed compliance geometry are arranged to couple a semiconductor die to a substrate. The direction of maximum compliance of each pillar may be aligned with the direction of maximum stress caused by unequal thermal expansion and contraction of the semiconductor die and substrate. Pillars may be designed and constructed with various shapes having particular compliance characteristics and particular directions of maximum compliance. The shape and orientation of the pillars may be selected as a function of their location on a die to accommodate the direction and magnitude of stress at their location. A method includes fabricating pillars with particular shapes by patterning to increase surface of materials upon which the pillar is plated or deposited.

Abstract translation: 具有定向柔性几何形状的支柱布置成将半导体管芯耦合到衬底。 每个支柱的最大顺应性的方向可以与由半导体管芯和衬底的不等的热膨胀和收缩引起的最大应力的方向一致。 支柱可以被设计和构造成各种形状，具有特定的顺应特性和最大顺应性的特定方向。 可以选择支柱的形状和取向作为它们在模具上的位置的函数，以适应其位置处的应力的方向和大小。 一种方法包括通过图案化来制造具有特定形状的柱，以增加柱被镀或沉积的材料的表面。

公开(公告)号：WO2006011601A1

公开(公告)日：2006-02-02

申请号：PCT/JP2005/013951

申请日：2005-07-29

Applicant: 京セラ株式会社 ,  加藤 謙一 ,  下赤 善男

Inventor： 加藤 謙一 ,  下赤 善男

IPC: H01L21/60 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05016 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01014

Abstract: 　半導体基板１上に所定パターンの下地電極層２が形成されるとともに、下地電極層２の一部上面に上地電極層３を形成した半導体素子であって、上地電極層３直下の下地電極層２の上面に厚み方向に延びる穴部２Ｘが形成されるとともに、穴部２Ｘの深さが、下地電極層２の厚みよりも浅い。

Abstract translation: 在半导体元件中，在半导体基板（1）上形成规定图案的基极层（2），在基极层（2）的上面的一部分上形成上电极层 ）。 在上电极层（3）正下方的基极层（2）的上面形成有沿厚度方向延伸的孔部（2X）​​。 孔部（2X）​​的深度小于基极层（2）的厚度。

公开(公告)号：WO2017001369A1

公开(公告)日：2017-01-05

申请号：PCT/EP2016/064940

申请日：2016-06-28

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： NOIJEN, Sander ,  UBACHS, Rene ,  VAN DER SLUIS, Olaf

IPC: H01L23/00 ,  H01L21/58 ,  H01L23/48 ,  H01L21/60

CPC classification number: H01L24/72 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L24/92 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/17183 ,  H01L2224/17517 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/72 ,  H01L2224/73201 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73251 ,  H01L2224/81192 ,  H01L2224/81899 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/32 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A device comprises a surface mount component on a substrate, in which the surface mount component is attached by a set of discrete mechanical coupling parts and by a bonding layer. This enables the mechanical coupling properties and the electrical/thermal properties to be optimized separately.

Abstract translation: 一种装置包括在基板上的表面安装部件，其中表面安装部件通过一组分立的机械耦合部件和粘合层附接。 这使得能够分别优化机械耦合性能和电/热性能。

公开(公告)号：WO2014071815A1

公开(公告)日：2014-05-15

申请号：PCT/CN2013/086214

申请日：2013-10-30

Applicant: 南通富士通微电子股份有限公司

Inventor： 林仲珉 ,  石磊 ,  陶玉娟

IPC: H01L23/485 ,  H01L21/48

CPC classification number: H01L24/13 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05011 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/115 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2924/00012

Abstract: 一种半导体器件及其形成方法，该半导体器件包括：半导体基底（300），该半导体基底（300）具有若干焊盘（301）；位于该焊盘（301）上的柱状电极，该柱状电极包括本体（307）和位于该本体（307）中的凹槽，凹槽的开口与柱状电极的顶部表面重合；位于该柱状电极上的焊球（321），该焊球（321）包括位于柱状电极顶部上的金属凸头（320）和填充满该凹槽的填充部（319）。焊球与柱状电极构成类似插稍的结构，提高了焊球与柱状电极之间的结合力。

公开(公告)号：WO2013013204A3

公开(公告)日：2013-03-14

申请号：PCT/US2012047722

申请日：2012-07-20

Applicant: QUALCOMM INC ,  BAO ZHONGPING ,  BURRELL JAMES D ,  GU SHIQUN

Inventor： BAO ZHONGPING ,  BURRELL JAMES D ,  GU SHIQUN

IPC: H01L23/485 ,  H01L21/60

CPC classification number: H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05015 ,  H01L2224/05017 ,  H01L2224/05558 ,  H01L2224/056 ,  H01L2224/1146 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14142 ,  H01L2224/16057 ,  H01L2224/17051 ,  H01L2224/81211 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2924/00014

Abstract: Pillars (300, 306, 502) having a directed compliance geometry are arranged to couple a semiconductor die (400, 500) to a substrate. The direction of maximum compliance of each pillar (300, 306, 502) may be aligned with the direction of maximum stress caused by unequal thermal expansion and contraction of the semiconductor die (400, 500) and the substrate. Pillars (300, 306, 502) may be designed and constructed with various shapes having particular compliance characteristics and particular directions (302, 304, 308, 310, 504) of maximum compliance. The shape and orientation of the pillars (300, 306, 502) may be selected as a function of their location on a die (400, 500) to accommodate the direction and magnitude of stress at their location. Pillars (610) may also be fabricated with particular shapes by patterning a material (604) such as a passivation material on a pad on a die (600) to increase the surface area upon which the pillar (610) is plated or deposited.

Abstract translation: 布置具有定向柔性几何形状的支柱（300,306,502）以将半导体管芯（400,500）耦合到衬底。 每个支柱（300,306,502）的最大顺应性的方向可以与由半导体管芯（400,500）和衬底的不相等的热膨胀和收缩引起的最大应力的方向对齐。 支柱（300,306,502）可以被设计和构造成具有特定柔量特性的各种形状和具有最大顺从性的特定方向（302,304,308,304,504）。 可以选择支柱（300,306,502）的形状和取向作为其在模具（400,500）上的位置的函数，以适应其位置处的应力的方向和大小。 也可以通过在模具（600）上的垫上图案化诸如钝化材料的材料（604）以增加柱（610）被镀或沉积的表面积，来制造具有特定形状的支柱（610）。

公开(公告)号：WO2012009520A3

公开(公告)日：2012-06-21

申请号：PCT/US2011043987

申请日：2011-07-14

Applicant: QUALCOMM INC ,  CHANDRASEKARAN ARVIND ,  GU SHIQUN ,  HAU-RIEGE CHRISTINE S

Inventor： CHANDRASEKARAN ARVIND ,  GU SHIQUN ,  HAU-RIEGE CHRISTINE S

IPC: H01L21/60

CPC classification number: H01L24/81 ,  H01L21/76877 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1161 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2224/13099 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper or nickel shell around the solder. The copper shell (220, 408) of one microbump contacts the copper shell (234) of a second microbump to enclose the solder (222) of the microbump connection. The copper shell (220 & 234) allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate (202, 230). Increased connection densities between two dies (202,230)or between a die and a packaging substrate are therefore possible.

Abstract translation: 微型接头中的电迁移会导致微胶囊中的空隙，从而降低了包含微型电池的集成电路的使用寿命。 通过在焊料周围形成铜或镍壳，可以增加微胶片的电迁移寿命。 一个微小块的铜壳（220,408）接触第二微型块的铜壳（234）以包围微型接头的焊料（222）。 铜壳（220和234）允许通过微型块的更高的电流密度。 因此，可以以更小的间距制造较小的微胶片，而不会发生电迁移的故障。 另外，铜壳减少了在基板（202,230）上的微型接头之间的短路或桥接。 因此，两个管芯（202,230）之间或管芯与封装基板之间的连接密度增加是可能的。