公开(公告)号：US5983493A

公开(公告)日：1999-11-16

申请号：US839763

申请日：1997-04-15

Applicant: Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

Inventor： Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

IPC: B23K20/00 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D21/02 ,  G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/603 ,  H01L21/66 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H05K1/14 ,  H05K3/20 ,  H05K3/32 ,  H05K3/40 ,  H01R43/00

CPC classification number: H05K3/4015 ,  B23K20/004 ,  C25D7/12 ,  G01R31/2884 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  B23K2201/40 ,  C25D21/02 ,  C25D5/08 ,  C25D5/22 ,  G01R31/287 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/141 ,  H05K3/20 ,  H05K3/326 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49171

Abstract: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

Abstract translation: 弹性接触结构直接安装在半导体晶片上的接合焊盘上，在裸片与半导体晶片分离（分离）之前。 这使得半导体管芯能够通过具有设置在其表面上的多个端子的电路板等连接到半导体管芯来进行（例如，测试和/或烧入）。 接下来，半导体管芯可以从半导体晶片分离，因此可以使用相同的弹性接触结构来实现半导体管芯和其他电子部件（例如布线基板，半导体封装等）之间的互连。 使用本发明的全金属复合互连元件作为弹性接触结构，可以在至少150℃的温度下进行老化，并且可以在少于60分钟内完成。

公开(公告)号：US5954842A

公开(公告)日：1999-09-21

申请号：US592058

申请日：1996-01-26

Applicant: Rich Fogal ,  Michael B. Ball

Inventor： Rich Fogal ,  Michael B. Ball

IPC: B23K20/00 ,  H01L21/48 ,  H01L21/603 ,  H01L21/607

CPC classification number: H01L24/85 ,  B23K20/004 ,  H01L21/4825 ,  H01L24/05 ,  H01L24/06 ,  H01L24/78 ,  B23K2201/40 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/78 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

Abstract: An apparatus for stabilizing a semiconductor die and lead fingers of a lead frame during the process of wire bonding comprising a rigid clamp having at least one bond site window extending therethrough and at least one resilient secondary clamp which extends from an edge of the bond site window to a position over and in contact with lead fingers extending over the semiconductor die. The arrangement of the secondary clamp is such that the contact force with the semiconductor die is sufficient to minimize, dampen, or prevent movement of the semiconductor die and/or lead finger bounce during the wire bonding process.

Abstract translation: 一种用于在引线接合过程中稳定引线框架的半导体管芯和引线指的装置，包括刚性夹具，所述刚性夹具具有延伸穿过其中的至少一个结合部位窗口，以及至少一个弹性副夹持件，其从所述粘结部位窗口的边缘延伸 到位于半导体管芯上方延伸并与铅指接触的位置。 次级夹具的布置使得与半导体管芯的接触力足以在引线接合过程期间最小化，抑制或防止半导体管芯和/或引线指的反弹移动。

公开(公告)号：US5864946A

公开(公告)日：1999-02-02

申请号：US839758

申请日：1997-04-15

Applicant: Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

Inventor： Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

IPC: B23K1/00 ,  B23K20/00 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D21/02 ,  G01R1/04 ,  G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/603 ,  H01L21/66 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H01R12/00 ,  H05K1/14 ,  H05K3/20 ,  H05K3/30 ,  H05K3/32 ,  H05K3/34 ,  H05K3/36 ,  H05K3/40 ,  H05K7/10 ,  H01R9/00

CPC classification number: H05K7/1069 ,  B23K1/0008 ,  B23K20/004 ,  C23C18/1605 ,  C23C18/165 ,  C25D7/12 ,  G01R1/07342 ,  G01R31/2884 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L21/6835 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/72 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0652 ,  H01L25/16 ,  H05K3/308 ,  H05K3/326 ,  H05K3/3426 ,  H05K3/4015 ,  B23K2201/40 ,  C25D21/02 ,  C25D5/08 ,  C25D5/22 ,  G01R31/2856 ,  G01R31/2863 ,  G01R31/2886 ,  H01L2223/54453 ,  H01L2224/02311 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0558 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/13022 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/274 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45572 ,  H01L2224/45599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48844 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/83851 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/90 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L23/544 ,  H01L24/45 ,  H01L24/49 ,  H01L24/83 ,  H01L24/90 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01R12/52 ,  H05K1/141 ,  H05K2201/0397 ,  H05K2201/068 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10378 ,  H05K2201/10719 ,  H05K2201/10734 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  H05K3/20 ,  H05K3/3421 ,  H05K3/368 ,  H05K3/4092 ,  Y02P70/611 ,  Y02P70/613 ,  Y10S977/712 ,  Y10S977/723 ,  Y10T29/49004 ,  Y10T29/49117 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49169 ,  Y10T29/49171 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4922 ,  Y10T29/49812 ,  Y10T428/12396 ,  Y10T428/12528

Abstract: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

Abstract translation: 弹性接触结构直接安装在半导体晶片上的接合焊盘上，在裸片与半导体晶片分离（分离）之前。 这使得半导体管芯能够通过具有设置在其表面上的多个端子的电路板等连接到半导体管芯来进行（例如，测试和/或烧入）。 接下来，半导体管芯可以从半导体晶片分离，因此可以使用相同的弹性接触结构来实现半导体管芯和其他电子部件（例如布线基板，半导体封装等）之间的互连。 使用本发明的全金属复合互连元件作为弹性接触结构，可以在至少150℃的温度下进行老化，并且可以在少于60分钟内完成。

公开(公告)号：US5715989A

公开(公告)日：1998-02-10

申请号：US657492

申请日：1996-06-04

Applicant: David R. Kee

Inventor： David R. Kee

IPC: B23K20/00 ,  B23K20/12 ,  H01L21/603

CPC classification number: H01L24/85 ,  B23K20/004 ,  B23K20/129 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/78301 ,  H01L2224/78822 ,  H01L2224/85099 ,  H01L2224/8517 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079

Abstract: A method of low temperature securing a wire to a bond pad in a microelectronic semiconductor device which includes providing a semiconductor die having a bond pad thereon and providing a wire to be secured to the bond pad. One of the bond pad and wire is rotated relative to the other and the pad is contacted with the wire while the bond pad and the wire are rotating relative to each other until the interface of the wire and the bond pad diffuse into each other sufficiently to provide a bond therebetween upon cooling to secure the wire to the bond pad. Preferably the die is stationary and the wire is rotated. The wire is then cut to a predetermined length. By this method, it is possible to weld together dissimilar metals as well as metals which were previously no available in the fabrication procedures being utilized such as, for example, wherein the wire and the bond pad are both copper, wherein the wire is copper and the bond pad is aluminum, or wherein the wire is copper and the bond pad is titanium tungsten.

Abstract translation: 一种低温将导线固定到微电子半导体器件中的接合焊盘的方法，该方法包括提供其上具有接合焊盘的半导体管芯，并提供要固定到接合焊盘的导线。 接合焊盘和导线中的一个相对于另一个旋转，并且焊盘与导线接触，同时接合焊盘和导线相对于彼此旋转，直到电线和接合焊盘的界面充分扩散到彼此中 在冷却时在其间提供接合以将导线固定到接合焊盘。 优选地，模具是静止的并且线材被旋转。 然后将线切割成预定长度。 通过这种方法，可以将异种金属以及之前在所用的制造过程中不可用的金属焊接在一起，例如，其中导线和接合焊盘都是铜，其中导线是铜和 接合焊盘是铝，或者其中导线是铜，并且接合焊盘是钛钨。

公开(公告)号：US5647528A

公开(公告)日：1997-07-15

申请号：US597616

申请日：1996-02-06

Applicant: Michael B. Ball ,  Rich Fogal

Inventor： Michael B. Ball ,  Rich Fogal

IPC: B23K20/00 ,  H01L21/00 ,  H01L21/48 ,  H01L21/603 ,  H01L21/607 ,  H01L23/495 ,  H01L21/60 ,  B23K37/04

CPC classification number: H01L24/85 ,  B23K20/004 ,  H01L21/4825 ,  H01L23/4951 ,  H01L24/78 ,  B23K2201/40 ,  H01L21/67138 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/78301 ,  H01L2224/78703 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802

Abstract: An apparatus and method of forming improved wire bonds between the contact pads on semiconductor devices and individual lead frame fingers of a lead frame. The present invention includes the use of an individual independent lead finger clamp during the wire bonding process to provide increased stability of the individual lead finger for improved bonding. If desired, the present invention also provides for the use of a conventional fixed clamp for the lead fingers during the wire bonding process in addition to the individual independent lead finger clamp during the wire bonding process to provide increased stability of the individual lead finger for improved bonding. The present invention also contemplates the replacement of the fixed clamp with another, or second, independent clamp in addition to the first individual independent lead finger clamp during the wire bonding process.

Abstract translation: 一种在半导体器件上的接触焊盘和引线框架的单个引线框架指状物之间形成改进的引线接合的装置和方法。 本发明包括在引线接合工艺期间使用独立的独立引线夹，以提供单个引线指针的改进粘合的增加的稳定性。 如果需要，本发明还提供了在引线接合工艺期间除了单独的独立引线夹以外，在引线接合工艺期间使用常规的固定夹具用于引线指，以提供单独引线指的改进的稳定性 粘接。 本发明还考虑在引线接合工艺期间除了第一独立引导夹具之外，用另一个或第二个独立的夹具替换固定夹具。

公开(公告)号：US5633533A

公开(公告)日：1997-05-27

申请号：US671426

申请日：1996-06-27

Applicant: Frank E. Andros ,  James R. Bupp ,  Michael DiPietro ,  Richard B. Hammer

Inventor： Frank E. Andros ,  James R. Bupp ,  Michael DiPietro ,  Richard B. Hammer

IPC: H01L23/14 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/10 ,  H01L23/34

CPC classification number: H01L23/49572 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/3672 ,  H01L23/4985 ,  H01L2224/16 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/50 ,  H01L2224/73265 ,  H01L2224/73269 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181

Abstract: An electronic package which includes a rigid support member, e.g., copper sheet, to which is bonded both the package's semiconductor chip and circuitized substrate members. The chip is bonded using a thermally conductive adhesive while the circuitized substrate, preferably a flexible circuit, is bonded using an electrically insulative adhesive. The chip is electrically coupled to designated parts of the circuitry of the substrate, preferably by wire, thermocompression or thermosonic bonding. An encapsulant may be used to cover and protect the connections between the chip and substrate. This package may in turn be electrically coupled to a separate, second substrate such as a PCB.

Abstract translation: 一种电子封装，其包括刚性支撑构件（例如铜片），其与封装的半导体芯片和电路化的衬底构件接合。 使用导热粘合剂将芯片粘合，同时使用电绝缘粘合剂粘合电路化基底，优选柔性电路。 芯片优选通过线，热压或热超声键合电耦合到衬底的电路的指定部分。 密封剂可以用于覆盖和保护芯片和衬底之间的连接。 该封装件又可电耦合到单独的第二基板，例如PCB。

公开(公告)号：US5601740A

公开(公告)日：1997-02-11

申请号：US573945

申请日：1995-12-18

Applicant: Benjamin N. Eldridge ,  Gaetan L. Mathieu

Inventor： Benjamin N. Eldridge ,  Gaetan L. Mathieu

IPC: B23K20/00 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D21/02 ,  G01R1/04 ,  G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/603 ,  H01L21/66 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H05K1/14 ,  H05K3/20 ,  H05K3/30 ,  H05K3/32 ,  H05K3/34 ,  H05K3/36 ,  H05K3/40 ,  H05K7/10 ,  B23K9/06

CPC classification number: B23K20/004 ,  C25D7/12 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  H05K3/24 ,  H05K3/308 ,  H05K3/326 ,  H05K3/3426 ,  H05K3/4015 ,  H05K7/1069 ,  B23K2201/40 ,  C25D21/02 ,  C25D5/08 ,  C25D5/22 ,  G01R3/00 ,  G01R31/2884 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/4569 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/78301 ,  H01L2224/81801 ,  H01L2224/85043 ,  H01L2224/851 ,  H01L2224/85201 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L24/45 ,  H01L24/49 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01R12/52 ,  H05K1/141 ,  H05K2201/0397 ,  H05K2201/068 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10378 ,  H05K2201/10719 ,  H05K2201/10734 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  H05K3/20 ,  H05K3/3421 ,  H05K3/368 ,  H05K3/4092 ,  Y02P70/611 ,  Y02P70/613

Abstract: The efficacy of electrical discharges for severing bond wires and/or for forming balls at the ends of bond wires (including bond wires already severed by alternative mechanisms) is improved by performing the electrical discharges in the presence of ultraviolet light. A "spark gap" is formed between an EFO electrode and the wire, one of which serves as the cathode of the spark gap. Preferably, the ultraviolet light is directed at the element serving as the cathode of the spark gap. Providing photoemission at the cathode element of the spark gap stabilizes arc/plasma formation and produces more reliable and predictable results. This technique may be used in conjunction with negative EFO systems or with positive EFO systems, and may benefit from either direct or field-assisted photoemission.

Abstract translation: 通过在紫外光的存在下进行放电，提高了在接合线（包括已被替代机构切断的接合线）的端部切断接合线和/或形成球的放电功效。 在EFO电极和导线之间形成“火花隙”，其中一个用作火花隙的阴极。 优选地，紫外线指向用作火花隙的阴极的元件。 在火花间隙的阴极元件处提供光电发射使电弧/等离子体形成稳定，并产生更可靠和可预测的结果。 这种技术可以与负EFO系统或正EFO系统结合使用，并可从直接或场辅助光电发射中受益。

公开(公告)号：US5595934A

公开(公告)日：1997-01-21

申请号：US505910

申请日：1995-07-24

Applicant: Yoon S. Kim

Inventor： Yoon S. Kim

IPC: H01L23/29 ,  H01L21/60 ,  H01L23/31 ,  H01L23/485 ,  H01L21/44

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85909 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/181

Abstract: A method for forming a protective oxide film on the bonding pads of a semiconductor chip which is to be encapsulated by a molded-in-place capsule of plastic material including exposing a chip having bonding pads (while the chip is in the form of wafer), to O.sub.3 and ultraviolet (UV) radiation, so that excited oxygen generated from the O.sub.3 by UV radiation oxidizes metal atoms, for example aluminum atom of the aluminum bonding pads, to form a fine oxide film over the bonding pads, this film providing protection from water and/or ions which would otherwise cause corrosion of the bonding pads.

Abstract translation: 在半导体芯片的接合焊盘上形成保护氧化膜的方法，该半导体芯片的接合焊盘将由塑料材料的就地原位胶囊封装，包括使具有接合焊盘的芯片露出（芯片为晶片形式） 对于O 3和紫外（UV）辐射，使得通过UV辐射从O 3产生的激发氧将氧化金属原子，例如铝接合焊盘的铝原子，以在接合焊盘上形成细小的氧化膜，该膜提供保护 来自水和/或离子，否则会导致焊盘的腐蚀。

公开(公告)号：US5565378A

公开(公告)日：1996-10-15

申请号：US997833

申请日：1992-12-29

Applicant: Shigeru Harada ,  Kimio Hagi ,  Kiyoaki Tsumura

Inventor： Shigeru Harada ,  Kimio Hagi ,  Kiyoaki Tsumura

IPC: H01L21/321 ,  H01L21/60 ,  H01L23/485 ,  H01L21/228

CPC classification number: H01L24/12 ,  H01L21/321 ,  H01L24/05 ,  H01L24/11 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043

Abstract: A passive state film is formed on a surface of a bonding pad as follows: A silicon substrate 71 is immersed in solution continuously supplied with ozone. Since ozone is continuously supplied, it is possible to maintain the concentration of the dissolved ozone in the solution above a predetermined concentration. Therefore, it is possible to make the speed of formation of the passive state film higher than the speed of fusion of aluminum, which is a main constituent of the bonding pad. Accordingly, it is possible to form a passive state film with no pinholes.

Abstract translation: 在接合焊盘的表面上如下形成被动态膜：将硅衬底71浸入连续供给臭氧的溶液中。 由于连续供给臭氧，所以可以将溶解的臭氧浓度保持在规定浓度以上。 因此，可以使被动状态膜的形成速度高于作为接合焊盘的主要成分的铝的熔融速度。 因此，可以形成没有针孔的被动状态膜。

公开(公告)号：US5519936A

公开(公告)日：1996-05-28

申请号：US382330

申请日：1995-02-01

Applicant: Frank E. Andros ,  James R. Bupp ,  Michael DiPietro ,  Richard B. Hammer

Inventor： Frank E. Andros ,  James R. Bupp ,  Michael DiPietro ,  Richard B. Hammer

IPC: H01L23/12 ,  H01L21/607 ,  H01L23/14 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H05K3/34

CPC classification number: H01L24/85 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/3672 ,  H01L23/49572 ,  H01L23/49816 ,  H01L23/4985 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/50 ,  H01L2224/73265 ,  H01L2224/73269 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  Y10T29/49144

Abstract: An electronic package which includes a rigid support member, e.g., copper sheet, to which is bonded both the package's semiconductor chip and circuitized substrate members. The chip is bonded using a thermally conductive adhesive while the circuitized substrate, preferably a flexible circuit, is bonded using an electrically insulative adhesive. The chip is electrically coupled to designated parts of the circuitry of the substrate, preferably by wire, thermocompression or thermosonic bonding. An encapsulant may be used to cover and protect the connections between the chip and substrate. This package may in turn be electrically coupled to a separate, second substrate such as a PCB.

Abstract translation: 一种电子封装，其包括刚性支撑构件（例如铜片），其与封装的半导体芯片和电路化的衬底构件接合。 使用导热粘合剂将芯片粘合，同时使用电绝缘粘合剂粘合电路化基底，优选柔性电路。 芯片优选通过线，热压或热超声键合电耦合到衬底的电路的指定部分。 密封剂可以用于覆盖和保护芯片和衬底之间的连接。 该封装件又可电耦合到单独的第二基板，例如PCB。