公开(公告)号：US06472293B2

公开(公告)日：2002-10-29

申请号：US09997878

申请日：2001-11-30

申请人： Tadatomo Suga

发明人： Tadatomo Suga

IPC分类号： H01L2130

CPC分类号： H01L25/0657 ,  H01L21/768 ,  H01L23/552 ,  H01L23/585 ,  H01L24/48 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/05547 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/85399 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each carrying semiconductor elements, are bonded together. On each semiconductor substrate is deposited an insulating layer through which is formed a connection wiring passed through the insulating layer so as to be connected to the interconnection layer of the semiconductor element. On a junction surface of at least one of the semiconductor substrates is formed an electrically conductive layer of an electrically conductive material in which an opening is bored in association with the connection wiring. The semiconductor substrates are bonded together by the solid state bonding technique to interconnect the connection wirings formed on each semiconductor substrate.

摘要翻译： 在多层互连结构中，要减少布线长度，并且要相互连接，同时需要对辐射噪声采取措施。 为此，公开了一种半导体器件，其中各自承载半导体元件的多个半导体衬底结合在一起。 在每个半导体衬底上沉积绝缘层，通过该绝缘层形成通过绝缘层的连接布线，以便连接到半导体元件的互连层。 在至少一个半导体衬底的接合表面上形成导电材料的导电层，其中开口与连接布线相连接。 通过固态接合技术将半导体衬底接合在一起，以互连形成在每个半导体衬底上的连接布线。

公开(公告)号：US10043975B2

公开(公告)日：2018-08-07

申请号：US15325924

申请日：2015-07-16

申请人： LAN TECHNICAL SERVICE CO., LTD. ,  Tadatomo Suga

发明人： Tadatomo Suga ,  Yoshiie Matsumoto

IPC分类号： H01L51/00 ,  H01L51/52 ,  H01L51/56

摘要： [Problem] To provide a technology that allows a film or glass to be bonded to a transport substrate and to be easily separated during the manufacture of a substrate.[Solution] Provided is a method for manufacturing a substrate having an electronic device formed on a surface, the method comprising a formation step for forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate; a bonding step for pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and a separation step for separating the substrate and the transport substrate.

公开(公告)号：US09142532B2

公开(公告)日：2015-09-22

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  B23K31/02 ,  B23K37/00 ,  B23K37/04 ,  H01L21/66 ,  H01L25/10 ,  H01L23/10 ,  H01L21/683

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。

公开(公告)号：US20150104656A1

公开(公告)日：2015-04-16

申请号：US14391568

申请日：2013-04-09

申请人： Tadatomo SUGA ,  LAN TECHNICAL SERVICE CO., LTD.

发明人： Tadatomo Suga ,  Yoshiie Matsumoto

IPC分类号： B32B15/08 ,  B32B38/00 ,  B32B27/28 ,  B32B15/09 ,  B32B27/36 ,  B32B37/24 ,  B32B37/02

CPC分类号： B32B15/08 ,  B29C59/14 ,  B29C65/1432 ,  B29C65/1467 ,  B29C66/028 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/71 ,  B29C66/712 ,  B29C66/72321 ,  B29C66/72325 ,  B29C66/72326 ,  B29C66/73161 ,  B29C66/7373 ,  B29C66/7392 ,  B29C66/73921 ,  B29C66/7394 ,  B29C66/73941 ,  B29C66/74 ,  B29C66/7461 ,  B29C66/74611 ,  B29C66/7465 ,  B29C66/8221 ,  B29C66/83241 ,  B29C66/83413 ,  B32B15/09 ,  B32B17/064 ,  B32B27/08 ,  B32B27/281 ,  B32B27/36 ,  B32B37/0076 ,  B32B37/02 ,  B32B37/182 ,  B32B37/203 ,  B32B37/24 ,  B32B38/00 ,  B32B2037/0092 ,  B32B2037/243 ,  B32B2250/03 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2307/546 ,  B32B2309/68 ,  B32B2310/0881 ,  B32B2457/20 ,  B32B2457/206 ,  C08J5/12 ,  Y10T156/10 ,  Y10T428/31681 ,  B29K2067/003 ,  B29K2079/08 ,  B29K2067/00 ,  B29K2067/006

摘要： The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

摘要翻译： 本发明提供了一种在不使用有机粘合剂的情况下将聚合物膜在低温下牢固且低成本地粘合到另一聚合物膜或玻璃基板上的方法。 聚合物膜的接合方法包括在第一聚合物膜的一部分或全部上形成第一无机材料层的工序（S1） 用于在第二聚合物膜的一部分或全部上形成第二无机材料层的步骤（S3） 用于通过用具有预定动能的颗粒轰击来表面活化第一无机材料层的表面的步骤（S2）; 用于通过用具有预定动能的颗粒轰击来表面活化第二无机材料层的表面的步骤（S4） 以及使第一无机材料层的表面活化面与第二无机材料层的表面活化面抵接并将第一聚合物膜和第二聚合物膜接合在一起的工序（S5）。

公开(公告)号：US08246926B2

公开(公告)日：2012-08-21

申请号：US10593870

申请日：2005-02-14

申请人： Kun'ichi Miyazawa ,  Masahisa Fujino ,  Masaru Tachibana ,  Ken-ichi Kobayashi ,  Tadatomo Suga

发明人： Kun'ichi Miyazawa ,  Masahisa Fujino ,  Masaru Tachibana ,  Ken-ichi Kobayashi ,  Tadatomo Suga

IPC分类号： C01B31/02

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/15 ,  C01B32/152 ,  C30B7/00 ,  C30B29/02 ,  C30B29/62

摘要： A needle crystal in the form of a capsule comprising fullerene molecules such as C60 and a C60 platinum derivative and having a hollow portion (a fullerene shell capsule) is provided. The fullerene shell capsule which has been prepared by the liquid-liquid interface precipitation method, which comprises (1) a step in which a solution containing a first solvent dissolving fullerene therein is combined with a second solvent in which the solubility of fullerene is lower than in the above first solvent; (2) a step in which a liquid-liquid interface is formed between the above solution and the above second solvent; and (3) a step in which a carbon fine wire is precipitated on the above liquid-liquid interface, has a novel characteristic in its form and can be used as a catalyst supporting material, a raw material for a plastic composite material, a storage material for gas such as hydrogen, a catalyst for fuel cell, or the like. Further, provided are novel C60-C70 mixed fine wire which is fullerene fine wire comprising two components of C60 and C70, and a method for preparing the mixed fine wire.

摘要翻译： 提供了包含富勒烯分子如C60和C60铂衍生物并具有中空部分（富勒烯壳胶囊）的胶囊形式的针状晶体。 通过液 - 液界面沉淀法制备的富勒烯壳胶囊，其包括（1）将含有其中溶解富勒烯的第一溶剂的溶液与富勒烯的溶解度低于第二溶剂的第二溶剂组合的步骤 在上述第一溶剂中; （2）在上述溶液和上述第二溶剂之间形成液 - 液界面的步骤; （3）在上述液 - 液界面上析出碳细线的步骤，其形状具有新颖特征，可用作催化剂载体材料，塑料复合材料用原料，储存 气体如氢气，燃料电池用催化剂等。 此外，提供了作为包含C60和C70两种成分的富勒烯细线的新型C60-C70混合细线以及混合细线的制备方法。

公开(公告)号：US20100252615A1

公开(公告)日：2010-10-07

申请号：US12819442

申请日：2010-06-21

申请人： Tadatomo Suga ,  Masuaki Okada

发明人： Tadatomo Suga ,  Masuaki Okada

IPC分类号： B23K31/02

CPC分类号： G02B6/4232 ,  B23K20/023 ,  B23K20/16 ,  B23K20/22 ,  B23K20/233 ,  B23K2101/42 ,  B23K2103/12 ,  G02B6/4214 ,  H01L21/67092 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48463 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/75822 ,  H01L2224/7592 ,  H01L2224/81009 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81121 ,  H01L2224/81205 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02292 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required.Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

摘要翻译： 为固相室温接合提供实用的接合技术，其不需要几纳米级的轮廓不规则，其中不需要高真空能量波处理和连续高真空接合。 由于在使用能量波进行表面活化处理之后立即使粘附物质层变薄，所以通过粉碎附着物质层进行接合来扩散接合界面，从而在接合面上出现新的表面，被接合物 结合在一起 为了更容易地粉碎附着物质层，要被接合的物体的接合部分的接合金属需要具有低的硬度。 根据本发明人进行的各种实验的结果，发现维氏硬度为200Hv以下的接合部的硬度对于室温接合特别有效。

公开(公告)号：US07784670B2

公开(公告)日：2010-08-31

申请号：US10586690

申请日：2005-01-21

申请人： Tadatomo Suga ,  Masuaki Okada

发明人： Tadatomo Suga ,  Masuaki Okada

IPC分类号： B23K31/00 ,  B23K31/02

CPC分类号： G02B6/4232 ,  B23K20/023 ,  B23K20/16 ,  B23K20/22 ,  B23K20/233 ,  B23K2101/42 ,  B23K2103/12 ,  G02B6/4214 ,  H01L21/67092 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48463 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/75822 ,  H01L2224/7592 ,  H01L2224/81009 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81121 ,  H01L2224/81205 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02292 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required.Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

摘要翻译： 为固相室温接合提供实用的接合技术，其不需要几纳米级的轮廓不规则，其中不需要高真空能量波处理和连续高真空接合。 由于在使用能量波进行表面活化处理之后立即使粘附物质层变薄，所以通过粉碎附着物质层进行接合来扩散接合界面，从而在接合面上出现新的表面，被接合物 结合在一起 为了更容易地粉碎附着物质层，要被接合的物体的接合部分的接合金属需要具有低的硬度。 根据本发明人进行的各种实验的结果，发现维氏硬度为200Hv以下的接合部的硬度对于室温接合特别有效。

公开(公告)号：US07550366B2

公开(公告)日：2009-06-23

申请号：US11293663

申请日：2005-12-02

申请人： Tadatomo Suga ,  Mohammad Matiar Rahman Howlader ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Mohammad Matiar Rahman Howlader ,  Tomoyuki Abe

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  H01L24/27 ,  H01L24/30 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701

摘要： A method for bonding of substrates has a steps of irradiating surfaces of the substrates respectively in a vacuum with both an inert gas beam and a metal beam thereby forming island shaped thin metal films on the surfaces of the substrates, and surface-activated bonding of the substrates through the island shaped thin metal films by contacting the surfaces of the substrates each other.

摘要翻译： 基板的接合方法具有分别在惰性气体束和金属梁两者的真空中照射基板的表面的步骤，从而在基板的表面上形成岛状薄金属膜，并且将表面激活的 通过使基板的表面彼此接触而穿过岛状薄金属膜的基板。

公开(公告)号：US07217631B2

公开(公告)日：2007-05-15

申请号：US11077212

申请日：2005-03-11

申请人： Tadatomo Suga

发明人： Tadatomo Suga

IPC分类号： H01L21/76 ,  H01L21/302

CPC分类号： H01L24/31 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5226 ,  H01L25/0657 ,  H01L2224/05572 ,  H01L2224/80895 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2224/05552 ,  H01L2924/00

摘要： There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductor 5 and a grounding wiring layer 10, which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portion 17 since they have a hardness lower than that of a through hole insulator 11 made of silicon nitride. The through hole insulator 11 is selectively etched by a reactive ion etching method until the through hole insulator 11 comes to have a height equal to the height of a bottom portion 19 of the dishing portion 17 of the through hole conductor 5. The through hole conductors 5 and 25 are aligned with each other, and the bonding surfaces 12 and 22 are bonded to each other in a solid state bonding manner.

摘要翻译： 提供了一种用于制造该器件的半导体器件和方法，该器件能够通过将导体彼此牢固地直接接合而实现可靠的电连接，即使通过CMP方法对CMP表面进行了抛光并且彼此固态接合。 通过根据CMP方法进行研磨，由铜制成的通孔导体5和接地布线层10变成凹状，呈碗状，下降，导致凹陷部17由于硬度较低 比由氮化硅制成的通孔绝缘体11的厚度大。 通孔绝缘体11通过反应离子蚀刻法被选择性蚀刻，直到通孔绝缘体11具有与通孔导体5的凹陷部分17的底部19的高度相同的高度。通孔导体 5和25彼此对准，并且接合表面12和22以固态接合方式彼此接合。

公开(公告)号：US07183190B2

公开(公告)日：2007-02-27

申请号：US10258062

申请日：2001-03-27

申请人： Kinji Saijo ,  Shingji Ohsawa ,  Hiroaki Okamoto ,  Kazuo Yoshida ,  Tadatomo Suga

发明人： Kinji Saijo ,  Shingji Ohsawa ,  Hiroaki Okamoto ,  Kazuo Yoshida ,  Tadatomo Suga

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.

摘要翻译： 尤其是在半导体芯片的电极形成面侧形成导体布线而具有电极间距扩大的芯片尺寸封装的方法，特别是有助于布线和凸块形成的方法。 一种半导体器件，包括通过蚀刻形成布线的金属箔在半导体元件上形成的半导体元件和导体布线; 以及一种半导体器件的制造方法，包括以下步骤：在半导体上的电极形成表面侧上层叠布线形成金属箔，在金属箔上形成抗蚀剂布线图案，蚀刻金属箔，将器件分割成单独的元件。