Abstract:
An integrated circuit (IC) that includes a plurality of bond pads disposed on a surface of the IC and a plurality of probe pads disposed on the surface of the IC is provided. Each of the plurality of probe pads is in electrical communication with corresponding bond pads. The plurality of probe pads are linearly configured across the surface. In one embodiment, the probe pads are disposed along a diagonal of the surface of the die defined between opposing vertices of the die surface. In another embodiment, multiple rows of linearly disposed probe pads are provided on the surface. In addition a packaging architecture for an integrated circuit is provided. The architecture includes a printed circuit board and a package substrate disposed on the printed circuit board. A first integrated circuit is disposed on a first surface of the package substrate. The package substrate is capable of supporting a second integrated circuit. The second integrated circuit is in electrical communication with a plurality of pads disposed on the first surface of the package substrate. Each of the plurality of pads is in electrical communication with the printed circuit board without communicating with the first integrated circuit.
Abstract:
A method for manufacturing and for testing an integrated circuit, including the steps of forming, on the upper portion of the integrated circuit (1), a passivation layer (19) comprising openings at the level of metal tracks (17) of the last interconnect stack of the integrated circuit; forming, in the openings, first pads (11) connected to second pads (13) formed on the passivation layer by conductive track sections, the first pads being intended for the connection of the integrated circuit; testing the integrated circuit by bringing test tips in contact with the second pads; and eliminating at least a portion of at least one of the conductive track sections.
Abstract:
An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.
Abstract:
A bond pad (200) has a first wire bond region (202) and a second wire bond region (204). In one embodiment, the first wire bond region (202) extends over a passivation layer (18). In an alternate embodiment, a bond pad has a probe region , a first wire bond region , and a second wire bond region . In one embodiment, the probe region and the wire bond region extend over a passivation layer (18). The bond pads may have any number of wire bond and probe regions and in any configuration. The ability for the bond pads to have multiple wire bond regions allows for multiple wire connections to a single bond pad, such as in multi-chip packages. The ability for the bond pads to extend over the passivation layer also allows for reduced integrated circuit die area.
Abstract:
A semiconductor integrated circuit includes test pads (209b) of a conducting layer, such as a secondary interconnection layer (205), on or near terminals such as bonding pads (202b) that are used only for probing and are not provided with bump electrodes (208). Other terminals such as bonding pads provided with bump electrodes may include similar test pads. Probing is carried out on such test pads, or both on such test pads and an underlying metal layer on which bump electrodes are to be formed. The use of test pads eliminates the need for bump electrodes for dedicated probing pads. Since the test pads are formed near terminals such as bonding pads and smaller than metal parts under bump electrodes, probing can be carried out after a secondary interconnection process.
Abstract:
Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.
Abstract:
A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.
Abstract:
A bond pad (10) has a probe region (14) and a wire bond region (12) that are substantially non-overlapping. In one embodiment, the bond pad (10) is connected to a final metal layer pad (16) and extends over an interconnect region (24). The bond pad (10) is formed from aluminum and the final metal layer pad (16) is formed from copper. Separating the probe region (14) from the wire bond region (12) prevents the final metal layer pad (16) from being damaged by probe testing, allowing for more reliable wire bonds. In another embodiment, the probe region (14) extends over a passivation layer (18). In an application requiring very fine pitch between bond pads, the probe regions (14) and wire bond regions (12) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions (14). In addition, forming the bond pads (10) over the interconnect region (24) reduces the size of the integrated circuit.