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公开(公告)号:CN106558506A
公开(公告)日:2017-04-05
申请号:CN201610649174.X
申请日:2016-08-10
申请人: 瑞萨电子株式会社
发明人: 矢岛明
IPC分类号: H01L21/60 , H01L23/488 , H01L23/31
CPC分类号: H01L24/14 , H01L23/3192 , H01L23/525 , H01L23/53214 , H01L23/53228 , H01L23/5329 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/02331 , H01L2224/02377 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03614 , H01L2224/03914 , H01L2224/0401 , H01L2224/05024 , H01L2224/05073 , H01L2224/0508 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05187 , H01L2224/05664 , H01L2224/10126 , H01L2224/10145 , H01L2224/11334 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13017 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/14051 , H01L2224/14131 , H01L2224/14133 , H01L2224/14135 , H01L2224/14177 , H01L2224/14179 , H01L2224/14517 , H01L2224/16058 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/17051 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81139 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/814 , H01L2224/81411 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/0132 , H01L2924/0133 , H01L2924/07025 , H01L2924/15311 , H01L2924/351 , H01L2924/381 , H01L2924/00012 , H01L2924/014 , H01L2924/0665 , H01L2924/01022 , H01L2924/04941 , H01L2924/01029 , H01L2924/01028 , H01L2924/01074 , H01L2924/01024 , H01L2924/01073 , H01L2924/0496 , H01L2924/01046 , H01L2924/01044 , H01L2924/01078 , H01L2924/01047 , H01L2924/00014 , H01L2924/00 , H01L24/10 , H01L23/31 , H01L23/488 , H01L2224/1701 , H01L2224/1703 , H01L2224/171 , H01L2224/1712
摘要: 本发明提供一种半导体器件,提高半导体器件的可靠性。在半导体器件中,连接半导体芯片(CHP)和布线基板(WB)的凸块电极(BE2)包括将其周围用绝缘膜(17)包围的第1部分和从绝缘膜(17)露出的第2部分。能够在增加凸块电极(BE2)的高度的同时,减小凸块电极(BE2)的宽度,所以能够增加与相邻的凸块电极(BE2)的距离,密封材料(UF)的填充性提高。
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公开(公告)号:CN102280423B
公开(公告)日:2014-06-04
申请号:CN201110025101.0
申请日:2011-01-20
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/11 , H01L23/488 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05099 , H01L2224/05571 , H01L2224/05599 , H01L2224/10126 , H01L2224/10145 , H01L2224/1182 , H01L2224/11823 , H01L2224/1191 , H01L2224/13017 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13578 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16058 , H01L2224/16148 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2224/81801 , H01L2224/81815 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/0002 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/37001 , H01L2924/00 , H01L2224/81 , H01L2224/16225 , H01L2924/00012 , H01L2224/16145 , H01L2924/00014 , H01L2924/01047 , H01L2224/05552 , H01L2224/81805
摘要: 本发明公开了一种集成电路装置及其制造方法。本发明的集成电路装置的工作件(work?piece)包括具有上表面和侧壁的铜凸块。在铜凸块的侧壁上形成保护层,但其上表面没有保护层。保护层包括铜的化合物和聚合物,且为介电层。本发明提供的集成电路装置及其制造方法,在裸片对晶片接合工艺中,即使工作件的温度高时,保护层也可避免铜凸块的氧化。
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公开(公告)号:CN102820275A
公开(公告)日:2012-12-12
申请号:CN201210184230.9
申请日:2012-06-05
申请人: 马克西姆综合产品公司
发明人: 维贾伊·乌拉尔 , 阿尔卡迪·V·萨莫伊洛夫
IPC分类号: H01L23/488 , H01L23/58
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/0508 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/10125 , H01L2224/10145 , H01L2224/11005 , H01L2224/11849 , H01L2224/13005 , H01L2224/131 , H01L2224/13111 , H01L2224/1319 , H01L2224/13561 , H01L2224/13562 , H01L2224/13582 , H01L2224/136 , H01L2224/13647 , H01L2224/13655 , H01L2224/94 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/381 , H01L2924/00012 , H01L2224/11 , H01L2924/206 , H01L2924/00 , H01L2224/05552
摘要: 本申请案涉及一种晶片级封装装置。所述晶片级封装装置的两个邻近附接凸块之间的最小距离小于所述两个邻近附接凸块之间的间距的约百分之二十五(25%)。两个邻近附接凸块之间的最小距离允许增加每面积的附接凸块的数目而不缩减凸块的大小,这增加了焊接可靠性。增加的焊接可靠性可缩减对附接凸块的应力,尤其是由在热循环试验期间的CTE失配、在跌落试验或循环弯曲试验期间的动态变形等等引起的应力。
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公开(公告)号:CN102693951A
公开(公告)日:2012-09-26
申请号:CN201210070010.3
申请日:2012-03-16
申请人: 索尼公司
IPC分类号: H01L23/485 , H01L21/60 , H05K3/28
CPC分类号: H05K3/3436 , H01L21/4846 , H01L21/563 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/02175 , H01L2224/0345 , H01L2224/03462 , H01L2224/03472 , H01L2224/0361 , H01L2224/03906 , H01L2224/0391 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05559 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/10126 , H01L2224/10145 , H01L2224/11001 , H01L2224/11005 , H01L2224/11462 , H01L2224/11472 , H01L2224/11906 , H01L2224/1191 , H01L2224/13007 , H01L2224/1308 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13565 , H01L2224/16014 , H01L2224/16145 , H01L2224/73104 , H01L2224/73204 , H01L2224/81024 , H01L2224/81193 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/83191 , H01L2224/83192 , H01L2224/92125 , H01L2225/06513 , H01L2924/00013 , H01L2924/00014 , H01L2924/01029 , H01L2924/3841 , H05K3/3473 , H05K2201/10674 , H05K2201/10984 , Y02P70/613 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要: 本公开涉及半导体器件及其制造方法以及配线板的制造方法。所述半导体器件包括焊接凸点,所述焊接凸点包括形成在基板的电极衬垫部分上的屏障金属层,以及形成在所述屏障金属层的上表面的中心部分以具有比所述屏障金属层的外径小的外径的焊接层。
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公开(公告)号:CN101521170A
公开(公告)日:2009-09-02
申请号:CN200810187362.0
申请日:2008-12-29
申请人: 奇梦达股份公司
发明人: 艾尔弗雷德·马丁 , 芭芭拉·哈斯勒 , 马丁·弗拉诺施 , 克劳斯-京特·奥珀曼
IPC分类号: H01L21/60 , H01L23/482
CPC分类号: H05K3/3452 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/03828 , H01L2224/0401 , H01L2224/05569 , H01L2224/0557 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06136 , H01L2224/10125 , H01L2224/10145 , H01L2224/11013 , H01L2224/11332 , H01L2224/11334 , H01L2224/11422 , H01L2224/11622 , H01L2224/1181 , H01L2224/11849 , H01L2224/13006 , H01L2224/13012 , H01L2224/13014 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/8109 , H01L2224/81205 , H01L2224/8123 , H01L2224/81815 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1432 , H01L2924/1434 , H01L2924/1436 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K3/3484 , H05K2201/0989 , H05K2201/2081 , H05K2203/043 , H01L2924/00014 , H01L2224/05552
摘要: 本发明涉及一种焊接触点及其形成方法。相应地还涉及一种集成电路,包括衬底和衬底上的结构层。结构层包括到衬底的开口,在衬底上具有第一范围和第二范围,其中,第一范围和第二范围至少部分地与开口重叠。集成电路还包括第一范围区域内的第一材料和第二范围区域内的第二材料。第一材料通过焊接材料阻止潮湿,以及第二材料通过焊接材料提供潮湿。
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公开(公告)号:CN1921095A
公开(公告)日:2007-02-28
申请号:CN200610121558.0
申请日:2006-08-22
申请人: 三星电子株式会社
IPC分类号: H01L23/485 , H01L23/488 , H01L23/498 , H01L23/48 , H01L21/60
CPC分类号: H01L23/3171 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/83 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05572 , H01L2224/05666 , H01L2224/10145 , H01L2224/10175 , H01L2224/11 , H01L2224/114 , H01L2224/116 , H01L2224/13 , H01L2224/13012 , H01L2224/13016 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2224/2929 , H01L2224/293 , H01L2224/81903 , H01L2224/83136 , H01L2224/83192 , H01L2224/838 , H01L2224/83851 , H01L2924/00013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01042 , H01L2924/01079 , H01L2924/01082 , H01L2924/0781 , H01L2924/12041 , H01L2924/12044 , H01L2924/19041 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00
摘要: 一种半导体芯片及其制造方法,所述半导体芯片包括多个连接至集成在半导体基板上的驱动电路的凸块和设置在所述驱动电路上的有机绝缘层。所述有机绝缘层自所述半导体基板的延伸小于所述多个凸块,使得所述多个凸块的下边缘比所述有机绝缘层伸出得更远。
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公开(公告)号:CN1906746A
公开(公告)日:2007-01-31
申请号:CN200480030957.5
申请日:2004-09-27
申请人: 倒装晶片技术有限公司
IPC分类号: H01L21/66
CPC分类号: H01L24/13 , H01L23/3114 , H01L23/3171 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/0401 , H01L2224/05567 , H01L2224/10126 , H01L2224/10145 , H01L2224/11334 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要: 一种晶片水平CSP(200)包括至少一个来自晶片的单元片(202)。该晶片水平CSP具有多个焊接球焊垫(206),在每个焊接球焊垫上有一个焊接球(308),并且每个焊接球被一个聚合物挡圈(310)包围。在制造该晶片水平CSP期间,在位于晶片上的聚合物层(412)的表面上形成一个壕沟(204)。来自聚合物挡圈的暂时液化的残余物(502)从聚合物挡圈流出,这是在将晶片加热到焊接球的回流温度时发生的。该壕沟起材料流动屏障的作用,限制残余物在液化状态下扩散的距离。来自聚合物挡圈的残余物被壕沟限定在一个区域(314)内。全深壕沟完全穿过聚合物层。选择地,部分深度的壕沟(712和912)部分地穿过聚合物层。应当理解,根据37C.E.R及1.72(b)节,摘要并不代表或限制权利要求的范围或意义。
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公开(公告)号:CN1437256A
公开(公告)日:2003-08-20
申请号:CN03104240.6
申请日:2003-02-08
申请人: 日本电气株式会社
IPC分类号: H01L23/48 , H01L23/52 , H01L21/28 , H01L21/768 , H01L21/60
CPC分类号: H05K3/3436 , H01L21/563 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/81 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05599 , H01L2224/10145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/1181 , H01L2224/1182 , H01L2224/11901 , H01L2224/11906 , H01L2224/13023 , H01L2224/1308 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13565 , H01L2224/136 , H01L2224/13609 , H01L2224/16 , H01L2224/16237 , H01L2224/73203 , H01L2224/73204 , H01L2224/81011 , H01L2224/81013 , H01L2224/81191 , H01L2224/81203 , H01L2224/814 , H01L2224/81801 , H01L2224/8191 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H05K2201/0367 , H05K2201/2081 , Y02P70/613 , H01L2224/13099 , H01L2224/29099
摘要: 用能使组件成形的电解镀敷法,将由铜等形成的柱状块,经过晶片上的接合膜和粘接膜,形成在布线薄膜上。例如金的防氧化膜在柱状块的上表面或一部分上表面和侧表面形成。例如氧化膜这样的防沾湿膜,按需要形成在柱状块上。如果这个块焊接至布线基板上的焊盘,焊料将沾湿于柱状块上表面整个区域,和侧表面的部分区域。因此能形成稳定而可靠的连接。另外,由于柱状块不熔化,半导体线路板和组装线路板之间的距离不因焊料而变窄。
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公开(公告)号:CN1096110C
公开(公告)日:2002-12-11
申请号:CN96193314.3
申请日:1996-03-18
申请人: 统一国际有限公司
发明人: 约瑟夫·丹尼尔·米斯 , 格雷钦·马耶尔克·阿德马 , 马克·D·克拉姆 , W·鲍伊德·罗格尔斯
CPC分类号: H01L24/03 , H01L21/2885 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05147 , H01L2224/05171 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/10145 , H01L2224/11001 , H01L2224/11462 , H01L2224/11472 , H01L2224/11474 , H01L2224/11849 , H01L2224/13116 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/00014 , H01L2224/29099 , H01L2924/00 , H01L2224/05552
摘要: 一种在具有接触焊盘的微电子器件上形成焊料凸点的方法,包括以下步骤:在器件上淀积钛阻挡层,在钛阻挡层上形成下凸点金属化层,和在下凸点金属化层上形成一个或多个焊料凸点。焊料凸点限定了被除去的下凸点金属化层暴露的部分,然后钛阻挡层的暴露的部分被除去。钛阻挡层保护下面的微电子器件不受除去下凸点金属化层的腐蚀剂的影响。钛阻挡层也可以防止下凸点金属化层在下面的微电子器件上形成残留物。因此,钛阻挡层使得下凸点金属化层很快被除去,而不会留下残留物,因而减小了焊料凸点间电短路的可能性。
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公开(公告)号:CN108022980A
公开(公告)日:2018-05-11
申请号:CN201711070414.1
申请日:2017-11-03
申请人: 安世有限公司
IPC分类号: H01L29/872 , H01L23/49
CPC分类号: H01L24/14 , H01L23/3114 , H01L24/09 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/10145 , H01L2224/13011 , H01L2224/13015 , H01L2224/13017 , H01L2224/13019 , H01L2224/13023 , H01L2224/131 , H01L2224/14051 , H01L2224/141 , H01L2224/1601 , H01L2224/16238 , H01L2224/1701 , H01L2224/81193 , H01L2224/81815 , H01L2924/384 , H01L2924/3841 , H01L2924/014 , H01L2924/00014 , H01L29/872 , H01L23/49
摘要: 本发明具有不可拆卸凸块的无引线封装件。该无引线封装的半导体器件包括顶表面、与所述顶表面相对的底表面、以及在所述顶表面和所述底表面之间的多个侧壁。至少一个连接焊盘设置在所述底表面上。所述连接焊盘包括连接部和从所述连接部延伸并远离所述底表面的至少一个突出部,使得所述突出部和所述连接部在所述底表面上围绕出空间。
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