SEMICONDUCTOR DEVICE
    15.
    发明公开

    公开(公告)号:US20230361007A1

    公开(公告)日:2023-11-09

    申请号:US18351253

    申请日:2023-07-12

    Applicant: ROHM CO., LTD.

    CPC classification number: H01L23/49548 H01L23/4951 H01L23/3121

    Abstract: A semiconductor device includes leads each having an obverse surface facing in a thickness direction and extending in a first direction crossing the thickness direction, a semiconductor element including electrodes connected to the obverse surfaces of the leads, and a sealing resin covering the leads and semiconductor element. The sealing resin includes a resin bottom surface opposite from the semiconductor element with respect to the leads in the thickness direction. The leads are mutually separated in a second direction orthogonal to the thickness direction and the first direction. Each lead includes a first reverse surface, a second reverse surface and a recessed surface facing away from the obverse surface in the thickness direction. The first and the second reverse surfaces are mutually separated with the recessed surface intervening in the first direction and exposed at the resin bottom surface. The recessed surface is covered with the sealing resin.

    SEMICONDUCTOR DEVICE
    18.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20170040243A1

    公开(公告)日:2017-02-09

    申请号:US15221375

    申请日:2016-07-27

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes a semiconductor chip, a terminal layer, an insulation layer with an opening, a protection layer with an opening, an inner conductive member, an outer conductive member, and a conductive bonding member. The insulation layer includes a first insulation layer, and a second insulation layer opposite to the functional surface of the chip with respect to the first insulation layer. The second insulation layer includes a shield portion overlapping with the terminal layer in plan view, and a retracted portion not overlapping with the terminal layer in plan view. A back surface of the retracted portion of the second insulation layer is more distant from the functional surface in a z-direction than is the main surface of the terminal layer that is opposite to the functional surface.

    Abstract translation: 半导体器件包括半导体芯片,端子层,具有开口的绝缘层,具有开口的保护层,内部导电构件,外部导电构件和导电接合构件。 绝缘层包括第一绝缘层和与芯片的功能表面相对于第一绝缘层相对的第二绝缘层。 第二绝缘层包括在平面图中与端子层重叠的屏蔽部分和在平面图中与端子层不重叠的缩回部分。 第二绝缘层的缩回部分的后表面在z方向上的功能表面比与功能表面相反的端子层的主表面更远。

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