-
公开(公告)号:US20180190642A1
公开(公告)日:2018-07-05
申请号:US15906313
申请日:2018-02-27
Applicant: ROHM CO., LTD.
Inventor: Hajime OKUDA , Motoharu HAGA , Kenji FUJII
IPC: H01L27/02 , H01L23/373 , H01L23/31 , H01L23/498 , H01L29/78
CPC classification number: H01L27/0255 , H01L23/3107 , H01L23/3171 , H01L23/3736 , H01L23/4334 , H01L23/4952 , H01L23/49562 , H01L23/49811 , H01L23/49838 , H01L29/7395 , H01L29/7827 , H01L2224/0603 , H01L2224/32245 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2924/181 , H01L2924/00012
Abstract: A semiconductor device according to the present invention includes: a substrate; a plurality of trenches formed in the substrate; and a plurality of functional element forming regions arrayed along each of the trenches, including a channel forming region as a current path, wherein the plurality of functional element forming regions includes a first functional element forming region in which the area of the channel forming region per unit area is relatively small and a second functional element forming region in which the area of the channel forming region per unit area is relatively large, and the first functional element forming region is provided at a region where heat generation should be suppressed.
-
公开(公告)号:US20170194234A1
公开(公告)日:2017-07-06
申请号:US15465427
申请日:2017-03-21
Applicant: ROHM CO., LTD.
Inventor: Kenji FUJII , Yasumasa KASUYA , Mamoru YAMAGAMI , Naoki KINOSHITA , Motoharu HAGA
IPC: H01L23/495 , H01L23/00 , H01L23/31
CPC classification number: H01L23/49527 , H01L23/291 , H01L23/293 , H01L23/3107 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3675 , H01L23/4334 , H01L23/4822 , H01L23/49503 , H01L23/49548 , H01L23/49551 , H01L23/49568 , H01L23/49572 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L2224/02311 , H01L2224/02331 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0401 , H01L2224/05008 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05582 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/1145 , H01L2224/1146 , H01L2224/1147 , H01L2224/1161 , H01L2224/11825 , H01L2224/13008 , H01L2224/13011 , H01L2224/13016 , H01L2224/13017 , H01L2224/13019 , H01L2224/13024 , H01L2224/13147 , H01L2224/13561 , H01L2224/13582 , H01L2224/13624 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/13666 , H01L2224/16014 , H01L2224/16245 , H01L2224/16258 , H01L2224/17107 , H01L2224/29008 , H01L2224/29082 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29166 , H01L2224/32245 , H01L2224/73253 , H01L2224/753 , H01L2224/75301 , H01L2224/75981 , H01L2224/81191 , H01L2224/81192 , H01L2224/81201 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/8146 , H01L2224/81464 , H01L2224/81466 , H01L2224/8183 , H01L2224/83191 , H01L2224/83201 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/83466 , H01L2224/8383 , H01L2224/92225 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01073 , H01L2924/01074 , H01L2924/05042 , H01L2924/07025 , H01L2924/17724 , H01L2924/17747 , H01L2924/181 , H01L2924/182 , H01L2924/186 , H01L2924/00012 , H01L2924/00014 , H01L2224/05166 , H01L2924/01028 , H01L2924/0665
Abstract: A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.
-
公开(公告)号:US20160240450A1
公开(公告)日:2016-08-18
申请号:US15096792
申请日:2016-04-12
Applicant: ROHM CO., LTD.
Inventor: Kenji FUJII , Yasumasa KASUYA , Mamoru YAMAGAMI , Naoki KINOSHITA , Motoharu HAGA
IPC: H01L23/29 , H01L23/31 , H01L23/00 , H01L23/367
CPC classification number: H01L23/49527 , H01L23/291 , H01L23/293 , H01L23/3107 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3675 , H01L23/4334 , H01L23/4822 , H01L23/49503 , H01L23/49548 , H01L23/49551 , H01L23/49568 , H01L23/49572 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L2224/02311 , H01L2224/02331 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0401 , H01L2224/05008 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05582 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/1145 , H01L2224/1146 , H01L2224/1147 , H01L2224/1161 , H01L2224/11825 , H01L2224/13008 , H01L2224/13011 , H01L2224/13016 , H01L2224/13017 , H01L2224/13019 , H01L2224/13024 , H01L2224/13147 , H01L2224/13561 , H01L2224/13582 , H01L2224/13624 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/13666 , H01L2224/16014 , H01L2224/16245 , H01L2224/16258 , H01L2224/17107 , H01L2224/29008 , H01L2224/29082 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29166 , H01L2224/32245 , H01L2224/73253 , H01L2224/753 , H01L2224/75301 , H01L2224/75981 , H01L2224/81191 , H01L2224/81192 , H01L2224/81201 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/8146 , H01L2224/81464 , H01L2224/81466 , H01L2224/8183 , H01L2224/83191 , H01L2224/83201 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/83466 , H01L2224/8383 , H01L2224/92225 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01073 , H01L2924/01074 , H01L2924/05042 , H01L2924/07025 , H01L2924/17724 , H01L2924/17747 , H01L2924/181 , H01L2924/182 , H01L2924/186 , H01L2924/00012 , H01L2924/00014 , H01L2224/05166 , H01L2924/01028 , H01L2924/0665
Abstract: A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.
-
公开(公告)号:US20150200181A1
公开(公告)日:2015-07-16
申请号:US14664168
申请日:2015-03-20
Applicant: ROHM CO., LTD.
Inventor: Motoharu HAGA , Shingo YOSHIDA , Yasumasa KASUYA , Toichi NAGAHARA , Akihiro KIMURA , Kenji FUJII
CPC classification number: H01L24/85 , B23K20/005 , B23K20/10 , B23K20/24 , H01L21/56 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/4952 , H01L23/49548 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48451 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/78303 , H01L2224/78307 , H01L2224/78309 , H01L2224/83 , H01L2224/8314 , H01L2224/83192 , H01L2224/83439 , H01L2224/838 , H01L2224/85 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85439 , H01L2224/8592 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/013 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/12042 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/19107 , H01L2924/20752 , H01L2924/20757 , H01L2924/3512 , H01L2924/01026 , H01L2924/00 , H01L2924/2076 , H01L2924/207 , H01L2924/20753 , H01L2924/20756 , H01L2924/20758 , H01L2924/00015
Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.
Abstract translation: 根据本发明的半导体器件包括半导体芯片,由含有铝的金属材料制成并形成在半导体芯片的顶表面上的电极焊盘,设置在半导体芯片的周围的电极引线,具有 线状延伸的主体部分,并且具有形成在主体部分的各个端部处并分别结合到电极焊盘和电极引线的焊盘接合部分和引线接合部分,以及密封半导体芯片的树脂封装件 引线和接合线,接合线由铜制成,并且整个电极焊盘和整个焊盘接合部分被不透水膜整体地覆盖。
-
公开(公告)号:US20230361007A1
公开(公告)日:2023-11-09
申请号:US18351253
申请日:2023-07-12
Applicant: ROHM CO., LTD.
Inventor: Kenji FUJII , Taro NISHIOKA , Shinya HIKITA
IPC: H01L23/495 , H01L23/31
CPC classification number: H01L23/49548 , H01L23/4951 , H01L23/3121
Abstract: A semiconductor device includes leads each having an obverse surface facing in a thickness direction and extending in a first direction crossing the thickness direction, a semiconductor element including electrodes connected to the obverse surfaces of the leads, and a sealing resin covering the leads and semiconductor element. The sealing resin includes a resin bottom surface opposite from the semiconductor element with respect to the leads in the thickness direction. The leads are mutually separated in a second direction orthogonal to the thickness direction and the first direction. Each lead includes a first reverse surface, a second reverse surface and a recessed surface facing away from the obverse surface in the thickness direction. The first and the second reverse surfaces are mutually separated with the recessed surface intervening in the first direction and exposed at the resin bottom surface. The recessed surface is covered with the sealing resin.
-
公开(公告)号:US20180047698A1
公开(公告)日:2018-02-15
申请号:US15792398
申请日:2017-10-24
Applicant: ROHM CO., LTD.
Inventor: Mamoru YAMAGAMI , Kenji FUJII
IPC: H01L23/00 , H01L23/495 , H01L23/31 , H01L23/525 , H01L23/532
CPC classification number: H01L24/49 , H01L23/3107 , H01L23/49524 , H01L23/49548 , H01L23/525 , H01L23/53223 , H01L23/53238 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02375 , H01L2224/0346 , H01L2224/0347 , H01L2224/0391 , H01L2224/03914 , H01L2224/0401 , H01L2224/04034 , H01L2224/04042 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05026 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05548 , H01L2224/05554 , H01L2224/05557 , H01L2224/05567 , H01L2224/05571 , H01L2224/05583 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/08245 , H01L2224/13024 , H01L2224/13076 , H01L2224/131 , H01L2224/13147 , H01L2224/13582 , H01L2224/13655 , H01L2224/13664 , H01L2224/1411 , H01L2224/16245 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/40479 , H01L2224/40491 , H01L2224/40499 , H01L2224/40993 , H01L2224/4112 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48247 , H01L2224/48824 , H01L2224/48847 , H01L2224/48855 , H01L2224/4912 , H01L2224/49177 , H01L2224/73221 , H01L2224/8485 , H01L2924/00012 , H01L2924/00014 , H01L2924/181 , H01L2924/20754 , H01L2924/351 , H01L2924/00 , H01L2924/2075 , H01L2924/20757 , H01L2924/20756 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20755 , H01L2924/014 , H01L2224/051
Abstract: An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip.
-
公开(公告)号:US20170179108A1
公开(公告)日:2017-06-22
申请号:US15379615
申请日:2016-12-15
Applicant: ROHM CO., LTD.
Inventor: Hajime OKUDA , Motoharu HAGA , Kenji FUJII
IPC: H01L27/02 , H01L23/373 , H01L23/31 , H01L29/78 , H01L23/498
CPC classification number: H01L27/0255 , H01L23/3171 , H01L23/3736 , H01L23/49811 , H01L23/49838 , H01L29/7827 , H01L2224/0603 , H01L2224/32245 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2924/181 , H01L2924/00012
Abstract: A semiconductor device according to the present invention includes: a substrate; a plurality of trenches formed in the substrate; and a plurality of functional element forming regions arrayed along each of the trenches, including a channel forming region as a current path, wherein the plurality of functional element forming regions includes a first functional element forming region in which the area of the channel forming region per unit area is relatively small and a second functional element forming region in which the area of the channel forming region per unit area is relatively large, and the first functional element forming region is provided at a region where heat generation should be suppressed.
-
公开(公告)号:US20170040243A1
公开(公告)日:2017-02-09
申请号:US15221375
申请日:2016-07-27
Applicant: ROHM CO., LTD.
Inventor: Kenji FUJII , Mamoru YAMAGAMI
IPC: H01L23/495 , H01L21/48 , H01L23/29 , H01L23/00 , H01L23/31
CPC classification number: H01L24/03 , H01L21/4853 , H01L23/3121 , H01L23/3171 , H01L23/3192 , H01L23/49541 , H01L24/08 , H01L24/29 , H01L2224/0401 , H01L2224/16245 , H01L2224/81815 , H01L2924/3512
Abstract: A semiconductor device includes a semiconductor chip, a terminal layer, an insulation layer with an opening, a protection layer with an opening, an inner conductive member, an outer conductive member, and a conductive bonding member. The insulation layer includes a first insulation layer, and a second insulation layer opposite to the functional surface of the chip with respect to the first insulation layer. The second insulation layer includes a shield portion overlapping with the terminal layer in plan view, and a retracted portion not overlapping with the terminal layer in plan view. A back surface of the retracted portion of the second insulation layer is more distant from the functional surface in a z-direction than is the main surface of the terminal layer that is opposite to the functional surface.
Abstract translation: 半导体器件包括半导体芯片,端子层,具有开口的绝缘层,具有开口的保护层,内部导电构件,外部导电构件和导电接合构件。 绝缘层包括第一绝缘层和与芯片的功能表面相对于第一绝缘层相对的第二绝缘层。 第二绝缘层包括在平面图中与端子层重叠的屏蔽部分和在平面图中与端子层不重叠的缩回部分。 第二绝缘层的缩回部分的后表面在z方向上的功能表面比与功能表面相反的端子层的主表面更远。
-
公开(公告)号:US20150294928A1
公开(公告)日:2015-10-15
申请号:US14669169
申请日:2015-03-26
Applicant: ROHM CO., LTD.
Inventor: Kenji FUJII , Yasumasa KASUYA , Mamoru YAMAGAMI , Naoki KINOSHITA , Motoharu HAGA
IPC: H01L23/495 , H01L23/00 , H01L23/367 , H01L23/31 , H01L23/29
CPC classification number: H01L23/49527 , H01L23/291 , H01L23/293 , H01L23/3107 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3675 , H01L23/4334 , H01L23/4822 , H01L23/49503 , H01L23/49548 , H01L23/49551 , H01L23/49568 , H01L23/49572 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L2224/02311 , H01L2224/02331 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0401 , H01L2224/05008 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/05582 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/1145 , H01L2224/1146 , H01L2224/1147 , H01L2224/1161 , H01L2224/11825 , H01L2224/13008 , H01L2224/13011 , H01L2224/13016 , H01L2224/13017 , H01L2224/13019 , H01L2224/13024 , H01L2224/13147 , H01L2224/13561 , H01L2224/13582 , H01L2224/13624 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/13666 , H01L2224/16014 , H01L2224/16245 , H01L2224/16258 , H01L2224/17107 , H01L2224/29008 , H01L2224/29082 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29166 , H01L2224/32245 , H01L2224/73253 , H01L2224/753 , H01L2224/75301 , H01L2224/75981 , H01L2224/81191 , H01L2224/81192 , H01L2224/81201 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/8146 , H01L2224/81464 , H01L2224/81466 , H01L2224/8183 , H01L2224/83191 , H01L2224/83201 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/83466 , H01L2224/8383 , H01L2224/92225 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01073 , H01L2924/01074 , H01L2924/05042 , H01L2924/07025 , H01L2924/17724 , H01L2924/17747 , H01L2924/181 , H01L2924/182 , H01L2924/186 , H01L2924/00012 , H01L2924/00014 , H01L2224/05166 , H01L2924/01028 , H01L2924/0665
Abstract: A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.
Abstract translation: 半导体器件具有设置有功能表面的半导体元件,功能电路形成在其上,并且背面面向与功能表面相反的方向,同时还具有支撑半导体元件并与半导体元件电连接的引线 以及覆盖半导体元件和引线的至少一部分的树脂封装。 半导体元件具有形成在功能面上的功能面侧电极,其具有在功能面朝向的方向突出的功能面侧凸起部。 功能面侧电极的功能面侧隆起部通过固态接合而与引线接合。
-
20.
公开(公告)号:US20150091143A1
公开(公告)日:2015-04-02
申请号:US14497722
申请日:2014-09-26
Applicant: ROHM CO., LTD.
Inventor: Kenji FUJII , Mamoru YAMAGAMI
IPC: H01L23/495 , H01L23/00 , H01L23/31
CPC classification number: H01L23/49575 , H01L23/3107 , H01L23/49548 , H01L23/49555 , H01L23/49816 , H01L23/49827 , H01L24/06 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05644 , H01L2224/06135 , H01L2224/16225 , H01L2224/16235 , H01L2224/16245 , H01L2224/32145 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48235 , H01L2224/48247 , H01L2224/49171 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2924/00014 , H01L2924/10253 , H01L2924/15192 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/45099 , H01L2224/48227
Abstract: A semiconductor device includes first and semiconductor elements, an electroconductive support member including electroconductive elements, and a resin package. The first semiconductor element includes a first active surface and first electrodes formed on the first active surface. The second semiconductor element includes a second active surface and second electrodes formed on the second active surface. The electroconductive support member is electrically connected to the first and second semiconductor elements and support these elements. The resin package covers the first and second semiconductor elements. The second semiconductor element is located between the first semiconductor element and the electroconductive support member. The first electrodes of the first semiconductor element and the electroconductive elements are connected by wire. An electroconductive bonding material is also provided that bonds the second electrodes of the second semiconductor element and the electroconductive elements to which the wire is bonded.
Abstract translation: 半导体器件包括第一和半导体元件,包括导电元件的导电支撑元件和树脂封装。 第一半导体元件包括第一有源表面和形成在第一有源表面上的第一电极。 第二半导体元件包括形成在第二有源表面上的第二有源表面和第二电极。 导电支撑构件电连接到第一和第二半导体元件并支撑这些元件。 树脂封装覆盖第一和第二半导体元件。 第二半导体元件位于第一半导体元件和导电支撑构件之间。 第一半导体元件的第一电极和导电元件通过导线连接。 还提供了一种导电接合材料,其结合第二半导体元件的第二电极和与导线接合的导电元件。
-
-
-
-
-
-
-
-
-