公开(公告)号：US08207612B2

公开(公告)日：2012-06-26

申请号：US12682383

申请日：2008-09-19

Applicant: Katsuyuki Torii ,  Arata Shiomi

Inventor： Katsuyuki Torii ,  Arata Shiomi

IPC: H01L23/48

CPC classification number: H01L29/7802 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00012

Abstract: The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film (12) and electrode (13) that arise with bonding while maintaining bonding strength. A semiconductor element (1) mounted on a semiconductor device including an interlayer insulation film (12) which has an aperture part (123) having an opening shape which is defined by an extension part (121) which covers the gate electrode (116) and extends in the first direction, a connection part (122), the extension part (121) and the connection part (122) which connects at fixed intervals in the first direction a pair of extension parts (121) which are adjacent to the second direction, and which exposes a main surface of a base region (112) and a main surface of an emitter region (113). Also, a second width dimension (122W) in the first direction below the connection part (122) is larger than a first width dimension (122W) in the second direction of the emitter region (113) below the extension part (121) of the interlayer insulation film (12).

Abstract translation: 本发明提供了半导体器件的半导体器件和制造方法，其可以防止在保持接合强度的同时通过接合产生的层间绝缘膜（12）和电极（13）的断裂。 一种半导体元件（1），其安装在包括层间绝缘膜（12）的半导体器件（12）上，所述层间绝缘膜具有开口形状，所述开口部分由覆盖所述栅极电极（116）的延伸部分（121） 在第一方向上延伸的连接部分（122），延伸部分（121）和连接部分（122），其在第一方向上以固定间隔连接一对延伸部分（121），其邻近第二方向 并且暴露出基极区域（112）和发射极区域（113）的主表面的主表面。 此外，在连接部分（122）下方的第一方向上的第二宽度尺寸（122W）大于第一宽度尺寸（122W），在第一宽度尺寸（122W）的第二宽度方向上的发射极区域（113）的第二方向 层间绝缘膜（12）。

公开(公告)号：US20040142551A1

公开(公告)日：2004-07-22

申请号：US10408119

申请日：2003-04-08

Applicant: Hitachi, Ltd.

Inventor： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Watanabe

IPC: H01L021/44

CPC classification number: H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

Abstract: Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

Abstract translation: 提供一种半导体器件，包括形成在半导体芯片上的第一金属膜，形成在所述第一金属膜上并由第二金属制成的球形部分，以及所述第一金属和所述第二金属的合金层， 所述第一金属膜和所述球部分，其中所述合金层到达所述第一金属膜的底部，并且所述球部分被树脂覆盖; 及其制造方法。 本发明使得可以提高接合焊盘部分和接合线的球形部分之间的互连上的粘附性，从而提高半导体器件的可靠性。

公开(公告)号：US20030006271A1

公开(公告)日：2003-01-09

申请号：US10241495

申请日：2002-09-11

Inventor： Kim H. Chen ,  Soojin Choi ,  Chun Yee Chan ,  Johnny Monis Nigos

IPC: B23K001/06 ,  B23K005/20 ,  B23K020/10 ,  B23K031/02

CPC classification number: H01L24/85 ,  B23K20/004 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/78301 ,  H01L2224/85099 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20753 ,  H01L2924/00015

Abstract: The present invention is a method for bonding gold wire to gold bond pads at temperatures lower than 125 degrees Celsius, and more particularly at room temperature, defined to be 25 degrees Celsius. By applying compressive force and ultrasonic energy, an intermetallic bond can be formed between a gold wire and a gold bond pad without elevating the temperature. Furthermore, the present invention uses ultrasonic energy with frequencies low enough to be in the range of commercially available wire bonders.

公开(公告)号：US09780065B2

公开(公告)日：2017-10-03

申请号：US15458381

申请日：2017-03-14

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak ,  Dominick A. DeAngelis ,  Horst Clauberg

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13624 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32013 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75343 ,  H01L2224/75348 ,  H01L2224/75349 ,  H01L2224/7565 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/759 ,  H01L2224/7598 ,  H01L2224/75981 ,  H01L2224/81005 ,  H01L2224/8109 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81906 ,  H01L2224/81907 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20301 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2224/81895

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

公开(公告)号：US09362247B2

公开(公告)日：2016-06-07

申请号：US14822164

申请日：2015-08-10

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak ,  Dominick A. DeAngelis

IPC: H01L23/00 ,  H01L25/10 ,  H01L25/03 ,  H01L25/00

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/75 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13624 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75343 ,  H01L2224/75348 ,  H01L2224/75349 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/759 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/81409 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/818 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/81906 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20301 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/8121 ,  H01L2924/00

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

公开(公告)号：US08767351B1

公开(公告)日：2014-07-01

申请号：US13755175

申请日：2013-01-31

Applicant: Seagate Technology LLC

Inventor： Leping Li ,  Saravuth Keo ,  Kara L. Maytag ,  Pramit P. Parikh ,  Jeff R. O'Konski ,  Mark A. Herendeen ,  Joel W. Hoehn ,  Roger L. Hipwell ,  Joe J. Schobel ,  John L. Ibele ,  Ralph Marquart ,  Edward Knutson

IPC: G11B5/48

CPC classification number: G11B5/102 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/4826 ,  G11B2005/0021 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/85012 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2924/12042 ,  H01L2924/20751 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20309 ,  H01L2924/20752 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

Abstract: The presently disclosed technology describes systems and methods for attaining a ball bond using less than 1 thousandth of an inch diameter gold wire using ultrasonic bonding energy and without heating an underlying bonding pad. The ball bond allows the use of particularly small bonding pads that are particularly close to adjacent microelectronic structures that limit the use of other bonding techniques that have shallow take-off angles.

Abstract translation: 目前公开的技术描述了使用超过千分之一英寸直径的金线使用超声波接合能量并且不加热下面的焊盘来获得球接合的系统和方法。 球接合允许使用特别接近相邻微电子结构的特别小的接合焊盘，其限制了具有浅起飞角的其它接合技术的使用。

公开(公告)号：US07015127B2

公开(公告)日：2006-03-21

申请号：US10408119

申请日：2003-04-08

Applicant: Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

Inventor： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

IPC: H01L21/44

CPC classification number: H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

Abstract: Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

公开(公告)号：US06620720B1

公开(公告)日：2003-09-16

申请号：US09546037

申请日：2000-04-10

Applicant: Ralph Salvatore Moyer ,  Vivian Wanda Ryan

Inventor： Ralph Salvatore Moyer ,  Vivian Wanda Ryan

IPC: H01L2144

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45655 ,  H01L2224/45666 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48655 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48755 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2224/45644 ,  H01L2924/01004 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

Abstract: The specification describes a process for forming a barrier layer on copper metallization in semiconductor integrated circuits. The barrier layer is effective for both wire bond and solder bump interconnections. The barrier layer is Ti/Ni formed on the copper. Aluminum bond pads are formed on the barrier layer for wire bond interconnections and copper bond pads are formed on the barrier layer for solder bump interconnections.

Abstract translation: 该说明书描述了在半导体集成电路中在铜金属化上形成阻挡层的工艺。 阻挡层对于引线键合和焊料凸块互连都是有效的。 阻挡层是在铜上形成的Ti / Ni。 铝焊盘形成在阻焊层上用于引线接合互连，并且在阻焊层上形成铜焊盘用于焊料凸块互连。

公开(公告)号：US20030168740A1

公开(公告)日：2003-09-11

申请号：US10369766

申请日：2003-02-21

Inventor： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

IPC: H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC classification number: H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

Abstract: Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

Abstract translation: 提供一种半导体器件，包括形成在半导体芯片上的第一金属膜，形成在所述第一金属膜上并由第二金属制成的球形部分，以及所述第一金属和所述第二金属的合金层， 所述第一金属膜和所述球部分，其中所述合金层到达所述第一金属膜的底部，并且所述球部分被树脂覆盖; 及其制造方法。 本发明使得可以提高接合焊盘部分和接合线的球形部分之间的互连上的粘附性，从而提高半导体器件的可靠性。

公开(公告)号：US20030049923A1

公开(公告)日：2003-03-13

申请号：US09949112

申请日：2001-09-07

Inventor： Richard C. Smoak

IPC: H01L021/44

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/8501 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/30105 ,  H01L2924/04953 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00015

Abstract: A method for manufacturing an integrated circuit improves the reliability of thermosonic bonds formed to attach a gold bond wire to an aluminum interconnect pad by reducing corrosion of the aluminum pad regions. In the method, a gold or silver plating is applied to the aluminum bond pads to prevent corrosion of the aluminum pad surface. Prior to applying the plating, corrosive contaminants are removed from the aluminum pad regions using an argon sputter etch. Annealing is used to remove damage from the argon sputtering, and further serves to alloy the resultant aluminum to gold or aluminum to silver interface. The aluminum pad layer is made very thin, or less than approximately 8000 null to limit Kirkendall voiding when gold wires are bonded to the pad using a thermosonic bonding process.