公开(公告)号：US07816780B2

公开(公告)日：2010-10-19

申请号：US12002677

申请日：2007-12-17

申请人： Ryoichi Kajiwara ,  Kazutoshi Ito

发明人： Ryoichi Kajiwara ,  Kazutoshi Ito

IPC分类号： H01L23/48 ,  H01L23/58 ,  H05K3/46

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/0603 ,  H01L2224/11505 ,  H01L2224/13144 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/1379 ,  H01L2224/138 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  Y10T428/24322 ,  Y10T428/25 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A technique capable of improving reliability of a semiconductor apparatus is provided. A semiconductor device having a metal electrode on at least one principal surface and a die pad (a metal member) electrically connected to the metal electrode via conductive resin composed of base resin (an organic binder) mixed with a Ag particle (metal powder) including precious metal are provided, and a configuration is made so that a porous nano-particle coat film (a precious metal layer) having an Ag (precious metal) nano particle fired on a metal surface is formed on at least one of mutually opposed surfaces of the metal electrode and the die pad.

摘要翻译： 提供了能够提高半导体装置的可靠性的技术。 一种具有至少一个主表面上的金属电极的半导体器件和通过与由Ag颗粒（金属粉末）混合的基础树脂（有机粘合剂）组成的导电树脂与金属电极电连接的管芯焊盘（金属部件） 提供贵金属，并且在金属表面上烧结Ag（贵金属）纳米颗粒的多孔纳米颗粒涂层（贵金属层）形成在至少一个相互相对的表面上 金属电极和管芯焊盘。

公开(公告)号：US20080145607A1

公开(公告)日：2008-06-19

申请号：US12002677

申请日：2007-12-17

申请人： Ryoichi Kajiwara ,  Kazutoshi Ito

发明人： Ryoichi Kajiwara ,  Kazutoshi Ito

IPC分类号： B32B3/10 ,  B32B5/16 ,  H01L21/44

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/0603 ,  H01L2224/11505 ,  H01L2224/13144 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/1379 ,  H01L2224/138 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  Y10T428/24322 ,  Y10T428/25 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A technique capable of improving reliability of a semiconductor apparatus is provided. A semiconductor device having a metal electrode on at least one principal surface and a die pad (a metal member) electrically connected to the metal electrode via conductive resin composed of base resin (an organic binder) mixed with a Ag particle (metal powder) including precious metal are provided, and a configuration is made so that a porous nano-particle coat film (a precious metal layer) having an Ag (precious metal) nano particle fired on a metal surface is formed on at least one of mutually opposed surfaces of the metal electrode and the die pad.

摘要翻译： 提供了能够提高半导体装置的可靠性的技术。 一种具有至少一个主表面上的金属电极的半导体器件和通过与由Ag颗粒（金属粉末）混合的基础树脂（有机粘合剂）组成的导电树脂与金属电极电连接的管芯焊盘（金属部件） 提供贵金属，并且在金属表面上烧结Ag（贵金属）纳米颗粒的多孔纳米颗粒涂层（贵金属层）形成在至少一个相互相对的表面上 金属电极和管芯焊盘。

公开(公告)号：US08314484B2

公开(公告)日：2012-11-20

申请号：US12691175

申请日：2010-01-21

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Ito ,  Toshiaki Ishii ,  Katsuo Arai ,  Takuya Nakajo ,  Hidemasa Kagii

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Ito ,  Toshiaki Ishii ,  Katsuo Arai ,  Takuya Nakajo ,  Hidemasa Kagii

IPC分类号： H01L23/15

CPC分类号： H01L21/56 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2224/48744

摘要： In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

摘要翻译： 在半导体器件的结构中，Si芯片和金属引线框通过金属接合，通过具有三维网状结构的高导电性金属的多孔接合层，使用Ag作为接合材料，以及含有 在与聚合物树脂接触的半导体组件的表面上形成氧化锌或氧化铝。 以这种方式，通过与主要由Ag形成的多孔结构的接合层的接合，可以降低Si片的热应力负荷，并且可以提高接合层本身的疲劳寿命。 此外，由于通过锚固效应可以提高聚合物树脂对膜的粘附性，可以防止接合部发生裂纹，从而可以提供高可靠性的无铅半导体器件。

公开(公告)号：US08975747B2

公开(公告)日：2015-03-10

申请号：US14238376

申请日：2012-08-13

申请人： Takashi Ando ,  Ryoichi Kajiwara ,  Hiroshi Hozoji

发明人： Takashi Ando ,  Ryoichi Kajiwara ,  Hiroshi Hozoji

IPC分类号： H01L23/14 ,  H01L23/48 ,  H01L23/498 ,  H01L21/60 ,  H01L23/00 ,  H01L23/373 ,  H01L23/495

CPC分类号： H01L23/49866 ,  H01L23/142 ,  H01L23/3733 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49579 ,  H01L23/49582 ,  H01L23/49811 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40227 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/8484 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/83205 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/01033 ,  H01L2924/2076 ,  H01L2224/37599

摘要： There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.

摘要翻译： 提供一种布线材料，其包括由金属制成的芯层和由金属制成的覆层和芯层为铜的纤维或含有铜的合金，并且包覆层由铜或含铜的合金形成， 具有低于铜的热膨胀系数的纤维，所述布线材料具有层叠结构，其中芯层的至少一个表面紧密附着在覆盖层上，并且包覆层中的纤维被布置成 平行于芯层的表面。

公开(公告)号：US08455986B2

公开(公告)日：2013-06-04

申请号：US13459839

申请日：2012-04-30

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

摘要翻译： 一种具有半导体芯片的半导体器件，具有第一主表面和第二相对的主表面，并且包括形成在第一主表面上的源极和栅电极的MOSFET，以及形成在第二主表面上的漏电极，第一和第二导电 作为源电极和栅电极的引线端子的部件分别设置在第一主表面上，第一和第二导电部件中的每一个在平面图中与芯片重叠，密封体密封芯片和部件 的第一和第二导电构件，使得第一导电构件的一部分从密封体的第一侧表面向外突出，并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出 在平面图中。

公开(公告)号：US07608917B2

公开(公告)日：2009-10-27

申请号：US11749211

申请日：2007-05-16

申请人： Ryoichi Kajiwara ,  Kazuhiro Suzuki ,  Toshiaki Ishii ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Kazuhiro Suzuki ,  Toshiaki Ishii ,  Kazutoshi Itou

IPC分类号： H01L23/02 ,  H01L23/10

CPC分类号： H05K3/284 ,  H01L23/16 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49575 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/33 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/0058 ,  H05K2201/0715 ,  H05K2201/10166 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module and an inverter apparatus in which a device or a joining part is not mechanically damaged even when the temperature in use becomes a high temperature in the range of 175 to 250° C., resulting in excellent reliability at high temperature retaining test and thermal cycling test. Low thermal expansion ceramic substrates are disposed above and below the device. A material having a coefficient of thermal expansion of 10 ppm/K or less is disposed between the ceramic substrates. In addition, an inorganic material having a coefficient of thermal expansion in the range of 2 to 6 ppm/K or less is disposed around the device.

摘要翻译： 功率半导体模块和逆变器装置，即使在使用温度在175〜250℃的范围内的高温下，器件或接合部也不会机械损坏，从而在高温保持试验中具有优异的可靠性 和热循环试验。 低热膨胀陶瓷衬底设置在器件的上方和下方。 在陶瓷基板之间设置具有10ppm / K以下的热膨胀系数的材料。 此外，在该装置的周围设置热膨胀系数为2〜6ppm / K以下的无机材料。

公开(公告)号：US06798072B2

公开(公告)日：2004-09-28

申请号：US09793439

申请日：2001-02-27

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Asao Nishimura ,  Masayoshi Shinoda

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Asao Nishimura ,  Masayoshi Shinoda

IPC分类号： H01L2348

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L23/295 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/31 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/325 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48644 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75314 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81409 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83851 ,  H01L2224/85051 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/05624 ,  H01L2224/4554

摘要： A semiconductor device includes a semiconductor chip and a printed circuit board. Metal electrodes of the semiconductor chip and the internal connection terminals of the printed circuit board are electrically connected through the metallic joining via precious metal bumps. A melting point of a metal material constituting each of the metallic joining parts is equal to or higher than 275 degrees, and a space defined between the chip and the board is filled with resin (under fill) containing 50 vol % or more inorganic fillers.

摘要翻译： 半导体器件包括半导体芯片和印刷电路板。 半导体芯片的金属电极和印刷电路板的内部连接端子通过金属接合通过贵金属凸块电连接。 构成每个金属接合部件的金属材料的熔点等于或高于275度，并且在芯片和板之间限定的空间填充含有50体积％以上无机填料的树脂（填充物）。

公开(公告)号：US5323952A

公开(公告)日：1994-06-28

申请号：US946627

申请日：1992-09-18

申请人： Mituo Kato ,  Ryoichi Kajiwara ,  Kazuya Takahashi ,  Setuo Sekine ,  Tokiyuki Seto

发明人： Mituo Kato ,  Ryoichi Kajiwara ,  Kazuya Takahashi ,  Setuo Sekine ,  Tokiyuki Seto

IPC分类号： H01L21/607 ,  B23K20/10 ,  H01L21/60 ,  H01L21/66

CPC分类号： H01L24/85 ,  B23K20/10 ,  H01L24/48 ,  H01L24/78 ,  B23K2201/40 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/48455 ,  H01L2224/4847 ,  H01L2224/48844 ,  H01L2224/78302 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L24/45 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20755 ,  H01L2924/30105

摘要： A bonding apparatus comprising a bonding tool, means for driving the bonding tool, means for detecting an amount of crushing of a bonding portion during bonding, means for calculating a rate of change of the amount of crushing detected by the amount-of-crushing detecting means, means for setting a target value, which is inputted from an external source, of the amount of crushing of the bonding portion, and means for controlling the driving means. When the rate of change of the amount of crushing calculated by the calculating means is smaller than a predetermined value, the controlling means compares the amount of crushing detected by the amount-of-crushing detecting means with the target value. When the amount of crushing detected by the amount-of-crushing detecting means is smaller than the target value, the controlling means discriminates that the bonding is being performed in a satisfactory manner and hence should be continued.

摘要翻译： 一种接合装置，包括接合工具，用于驱动接合工具的装置，用于在接合期间检测接合部分的破碎量的装置，用于计算通过粉碎量检测检测到的破碎量的变化率的装置 装置，用于设定从外部源输入的目标值的装置，以及用于控制驱动装置的装置。 当由计算装置计算的破碎量的变化率小于预定值时，控制装置将由破碎量检测装置检测的破碎量与目标值进行比较。 当由破碎量检测装置检测到的破碎量小于目标值时，控制装置以令人满意的方式鉴别出正在进行接合，因此应继续进行。

公开(公告)号：US09209044B2

公开(公告)日：2015-12-08

申请号：US13308586

申请日：2011-12-01

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Yusuke Asaumi

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Yusuke Asaumi

IPC分类号： H01L21/56 ,  H01L23/049 ,  H01L23/24 ,  H01L23/29 ,  H01L23/373 ,  H01L23/31

CPC分类号： C23C16/56 ,  C22F1/10 ,  C22F1/165 ,  H01L21/56 ,  H01L23/049 ,  H01L23/24 ,  H01L23/296 ,  H01L23/3142 ,  H01L23/3735 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  Y10T428/12458 ,  Y10T428/12472 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic member 1 including a metal with a high melting point of 500° C. or more, a resin member 2 being integrated with the metallic member 1; and an alloy layer 3 including a metal with a low melting point lower than 500° C. The alloy layer 3 is arranged between the metallic member 1 and the resin member 2, and has average surface roughness thereof in the range from 5 nm or more to less than 1 μm at the interface between the alloy layer 3 and the resin member 2. Herein, a period of the unevenness formed on the interface of the alloy layer 3 is in the range from 5 nm or more to less than 1 μm.

摘要翻译： 提供具有优异的粘合强度的金属 - 树脂复合材料，其制造方法，母线，模块壳体和树脂连接器部件。 金属 - 树脂复合材料包括金属构件1，其包括具有500℃或更高熔点的金属的金属构件1，与金属构件1成一体的树脂构件2; 以及包含低于500℃的低熔点金属的合金层3.合金层3配置在金属构件1与树脂构件2之间，其平均表面粗糙度为5nm以上 在合金层3和树脂构件2之间的界面处小于1μm。这里，在合金层3的界面上形成的凹凸的周期在5nm以上至小于1μm的范围内。

公开(公告)号：US08643185B2

公开(公告)日：2014-02-04

申请号：US12246811

申请日：2008-10-07

申请人： Ryoichi Kajiwara ,  Kazutoshi Itou ,  Hiroi Oka ,  Takuya Nakajo ,  Yuichi Yato

发明人： Ryoichi Kajiwara ,  Kazutoshi Itou ,  Hiroi Oka ,  Takuya Nakajo ,  Yuichi Yato

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01B1/22

CPC分类号： H01L23/49562 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/16 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/8184 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/351 ,  H05K3/321 ,  H05K2201/0116 ,  H05K2201/0218 ,  H05K2201/0272 ,  H05K2201/10636 ,  H05K2203/1131 ,  H05K2203/121 ,  H05K2203/125 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.

摘要翻译： 芯片接合部分由具有约15μm至200μm的最大粒径和Ag的粘合剂层的良好导电的Cu金属粉末金属地结合，并且微孔均匀地分散在接合层中。 利用这种结构，可以在不使用铅的情况下确保约260℃的回流电阻和热循环试验下的可靠性。