专利检索 ap:("Kinya Nakatsu" OR "Hideki Miyazaki" OR "Yoshitaka Takezawa" OR "Toshiaki Ishii" OR "Hiroshi Hozoji") AND inv:"Hiroshi Hozoji" 第 5 页

41.

发明申请
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法

公开(公告)号：US20110156225A1

公开(公告)日：2011-06-30

申请号：US13062565

申请日：2009-07-31

申请人： Hiroshi Hozoji , Toshiaki Morita , Yusuke Yasuda , Chiko Yorita , Yuji Shirai

发明人： Hiroshi Hozoji , Toshiaki Morita , Yusuke Yasuda , Chiko Yorita , Yuji Shirai

IPC分类号： H01L23/552 , H01L21/56

CPC分类号： H01L23/3121 , H01L21/561 , H01L23/3677 , H01L23/552 , H01L23/66 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/165 , H01L2221/68331 , H01L2224/32225 , H01L2224/32227 , H01L2224/45599 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/92 , H01L2224/97 , H01L2924/00014 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/15313 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/3025 , H05K1/0206 , H05K1/0218 , H05K3/284 , H05K2201/0715 , H05K2201/0919 , H05K2203/1131 , H05K2203/1316 , H01L2224/83 , H01L2224/85 , H01L2224/92247 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099

摘要： A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices 5 and 6 mounted on a main surface of a circuit board 1 are provided, the mount devices 5 and 6 are electrically connected to a wiring pattern 4 at the main surface of the circuit board 1, a sealant 7 of an insulating resin is formed to seal the mount devices 5 and 6, metal particles are applied to a surface of the sealant 7, and the metal particles applied are sintered, thereby forming an electromagnetic shielding layer 2, and electrically connecting the electromagnetic shielding layer 2 to a ground pattern 3 of the circuit board 1.

摘要翻译： 一种在安装电子元件时实现电加热过程中的电磁波屏蔽性和可靠性的半导体器件。在半导体装置中，设置安装在电路基板1的主表面上的安装装置5和6，安装装置5和6在电路板1的主表面电连接到布线图案4，密封剂7 形成绝缘树脂以密封安装装置5和6，将金属颗粒施加到密封剂7的表面，并且将所施加的金属颗粒烧结，从而形成电磁屏蔽层2，并将电磁屏蔽层 2到电路板1的接地图案3。

42.

发明申请
Metal-resin-boned structured body and resin-encapsulated semiconductor device, and fabrication method for them 有权
标题翻译：金属树脂结构体和树脂封装的半导体器件及其制造方法

公开(公告)号：US20090197375A1

公开(公告)日：2009-08-06

申请号：US12320559

申请日：2009-01-29

申请人： Ryoichi Kajiwara , Shigehisa Motowaki , Kazutoshi Itou , Hiroshi Hozoji

发明人： Ryoichi Kajiwara , Shigehisa Motowaki , Kazutoshi Itou , Hiroshi Hozoji

IPC分类号： H01L21/02 , B05D3/02 , B05D3/06 , H05H1/00 , B32B15/01

CPC分类号： H01L23/49582 , H01L21/56 , H01L23/3107 , H01L23/49586 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L2224/29 , H01L2224/29101 , H01L2224/29116 , H01L2224/2919 , H01L2224/29298 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48472 , H01L2224/48699 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2224/92247 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12044 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H05K1/0306 , H05K1/053 , H05K1/056 , H05K3/28 , H05K2201/0175 , H05K2201/0195 , H05K2203/121 , Y10T428/12493 , Y10T428/12868 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00012

摘要： A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

摘要翻译： 根据本发明的金属基/聚合物 - 树脂结合结构体的制造方法包括以下步骤：（1）向金属基材的表面施加含有可在350℃分解的有机金属化合物的溶液。或更低; （2）在氧化气氛中烘烤涂布的溶液，在金属基材的表面形成含有有机金属化合物的金属的氧化物的涂层; （3）在涂层上提供聚合物树脂; 和（4）硬化聚合物树脂以提供金属基/聚合物 - 树脂结合体。

43.

发明授权
Multi-chip module including semiconductor devices and a wiring substrate for mounting the semiconductor devices 失效
标题翻译：包括半导体器件的多芯片模块和用于安装半导体器件的布线基板

公开(公告)号：US06791178B2

公开(公告)日：2004-09-14

申请号：US09997175

申请日：2001-11-30

申请人： Yoshihide Yamaguchi , Takao Terabayashi , Hiroyuki Tenmei , Hiroshi Hozoji , Naoya Kanda

发明人： Yoshihide Yamaguchi , Takao Terabayashi , Hiroyuki Tenmei , Hiroshi Hozoji , Naoya Kanda

IPC分类号： H01L2304

CPC分类号： H05K3/0044 , H01L21/486 , H01L23/147 , H01L23/15 , H01L23/49816 , H01L23/5383 , H01L23/5384 , H01L24/48 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/16225 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1433 , H01L2924/15311 , H01L2924/19041 , H01L2924/19105 , H05K1/0271 , H05K1/0306 , H05K1/115 , H05K3/4605 , H05K3/4688 , H05K2201/0154 , H05K2201/068 , H05K2201/0949 , H05K2201/09518 , H05K2201/09536 , H05K2201/0959 , H05K2201/09827 , H05K2203/025 , H05K2203/1581 , H01L2924/00 , H01L2224/45015 , H01L2924/207

摘要： A multi-chip module has semiconductor devices and a wiring substrate for mounting the semiconductor devices, in which the wiring substrate comprises a glass substrate having holes formed by sand blasting and a wiring layer formed on the surface of the glass substrate and having wiring and an insulation layer.

摘要翻译： 多芯片模块具有半导体器件和用于安装半导体器件的布线基板，其中布线基板包括具有通过喷砂形成的孔的玻璃基板和形成在玻璃基板的表面上的布线层并具有布线和绝缘层。

44.

发明授权
Electronic apparatus 有权
标题翻译：电子仪器

公开(公告)号：US06744135B2

公开(公告)日：2004-06-01

申请号：US10147073

申请日：2002-05-17

申请人： Takehiko Hasebe , Takehide Yokozuka , Nobuyuki Ushifusa , Masahide Harada , Eiji Matsuzaki , Hiroshi Hozoji

发明人： Takehiko Hasebe , Takehide Yokozuka , Nobuyuki Ushifusa , Masahide Harada , Eiji Matsuzaki , Hiroshi Hozoji

IPC分类号： H01L2334

CPC分类号： H01L24/16 , H01L23/142 , H01L23/367 , H01L23/3677 , H01L23/49822 , H01L23/49833 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2224/05599 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16235 , H01L2224/29139 , H01L2224/2929 , H01L2224/32057 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8121 , H01L2224/81815 , H01L2224/83385 , H01L2224/83851 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01054 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/1532 , H01L2924/15787 , H01L2924/181 , H01L2924/19105 , H01L2924/19106 , H05K1/0206 , H05K1/0207 , H05K1/021 , H05K1/056 , H05K1/144 , H05K3/384 , H05K3/4608 , H05K3/4641 , H05K3/4652 , H05K2201/0209 , H05K2201/09509 , H05K2201/09536 , H05K2201/09554 , H05K2201/09563 , H05K2201/09572 , H05K2201/0959 , H05K2201/096 , H05K2201/09845 , H05K2201/10734 , H01L2924/05432 , H01L2924/01026 , H01L2924/01028 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207

摘要： The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.

摘要翻译： 本发明提供一种电子设备，其具有包括金属板的金属芯基板，形成在金属板上的绝缘层和形成在绝缘层上的导电层，以及电子部件，并且导电层和导体层的端子电子部件连接。在电子设备中，具有高导热性的部件被布置成与金属板和电子部件两者接触。因此，电子设备的散热性提高。

45.

发明授权
Semiconductor device including a resin sealing member which exposes the rear surface of the sealed semiconductor chip 失效
标题翻译：半导体装置包括使密封的半导体芯片的后表面露出的树脂密封构件

公开(公告)号：US6124629A

公开(公告)日：2000-09-26

申请号：US168097

申请日：1998-10-08

申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto

发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto

IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/31 , H01L23/495 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34

CPC分类号： H01L24/32 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/05 , H01L24/06 , H01L25/105 , H01L29/0657 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/06136 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73215 , H01L2224/85205 , H01L2224/8592 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

46.

发明授权
Semiconductor device 失效

公开(公告)号：US6100115A

公开(公告)日：2000-08-08

申请号：US166121

申请日：1998-10-05

申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto

发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto

IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/31 , H01L23/495 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34

CPC分类号： H01L24/32 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/05 , H01L24/06 , H01L25/105 , H01L29/0657 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/06136 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73215 , H01L2224/85205 , H01L2224/8592 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

47.

发明授权
Fabrication method for resin-encapsulated semiconductor device 有权
标题翻译：树脂封装半导体器件的制造方法

公开(公告)号：US08313983B2

公开(公告)日：2012-11-20

申请号：US13108430

申请日：2011-05-16

申请人： Ryoichi Kajiwara , Shigehisa Motowaki , Kazutoshi Itou , Hiroshi Hozoji

发明人： Ryoichi Kajiwara , Shigehisa Motowaki , Kazutoshi Itou , Hiroshi Hozoji

IPC分类号： H01L21/44

CPC分类号： H01L23/49582 , H01L21/56 , H01L23/3107 , H01L23/49586 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L2224/29 , H01L2224/29101 , H01L2224/29116 , H01L2224/2919 , H01L2224/29298 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48472 , H01L2224/48699 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2224/92247 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12044 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H05K1/0306 , H05K1/053 , H05K1/056 , H05K3/28 , H05K2201/0175 , H05K2201/0195 , H05K2203/121 , Y10T428/12493 , Y10T428/12868 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00012

摘要： A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

摘要翻译： 树脂封装半导体器件的制造方法包括以下步骤：（1）将半导体器件芯片接合到布线基板的第一电连接金属端子; （2）经由电连接器电连接半导体器件的电极和布线基板的第二电连接金属端子; （3）通过将溶液施加到组件的表面并烘烤所施加的溶液来表面处理这样的组件; 和（4）将绝缘包封树脂传递模塑到表面处理的组件上。

48.

发明授权
Semiconductor device and power conversion apparatus using the same 有权
标题翻译：半导体装置及使用其的电力转换装置

公开(公告)号：US07542317B2

公开(公告)日：2009-06-02

申请号：US11501784

申请日：2006-08-10

申请人： Katsunori Azuma , Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki , Toshiya Satoh , Osamu Otsuka

发明人： Katsunori Azuma , Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki , Toshiya Satoh , Osamu Otsuka

IPC分类号： H02M7/537

CPC分类号： H05K7/1432 , H01L24/40 , H01L24/41 , H01L24/45 , H01L25/072 , H01L2224/32225 , H01L2224/40091 , H01L2224/40137 , H01L2224/40139 , H01L2224/45124 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/01087 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2224/48 , H01L2924/00 , H01L2224/37099

摘要： The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group.Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.

摘要翻译： 电力转换装置使用半导体装置。所述半导体器件包括第一组功率半导体元件，其中至少一个功率半导体元件电连接在第一电位和第三电位之间，第二组功率半导体元件，其中至少一个功率半导体元件电连接在第二电位与第三电位之间电位和第三组功率半导体元件，其中至少一个功率半导体元件电连接在第一电位和第三电位之间。第二组置于第一组和第三组之间。因此，提供了具有电感还原性和发热平衡能力的低损耗半导体器件以及使用其的电力转换装置。

49.

发明授权
Semiconductor device, power converter device using it, and hybrid vehicle using the power converter device 失效
标题翻译：半导体装置，使用它的功率转换装置，以及使用该功率转换装置的混合动力车辆

公开(公告)号：US07528485B2

公开(公告)日：2009-05-05

申请号：US11191942

申请日：2005-07-29

申请人： Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki

发明人： Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki

IPC分类号： H01L23/48 , H01L23/52 , H01L23/40

CPC分类号： H01L24/84 , H01L23/4928 , H01L23/49579 , H01L24/33 , H01L24/37 , H01L24/40 , H01L2224/27505 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/32225 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37298 , H01L2224/3754 , H01L2224/37599 , H01L2224/37666 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2924/351 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2924/00012

摘要： A semiconductor device which uses a semiconductor element having main current input/output electrodes, one and the other of which are extended up to a one surface and a remaining surface of a semiconductor chip respectively for causing one of the input/output electrodes to be contacted with a conductive layer of a insulating substrate, whereby the semiconductor element is supported on or above the insulating substrate. A conductive strip which is made of a composite material of carbon and aluminum or a composite material of carbon and copper is used for connection between the remaining input/output electrode of the semiconductor chip and the conductive layer of the insulating substrate.

摘要翻译： 一种半导体器件，其使用具有主电流输入/输出电极的半导体元件，一个并且另一个半导体元件分别延伸到半导体芯片的一个表面和剩余表面，以使得一个输入/输出电极被接触具有绝缘基板的导电层，由此半导体元件被支撑在绝缘基板上或上方。由碳和铝的复合材料或碳和铜的复合材料制成的导电带用于半导体芯片的剩余输入/输出电极和绝缘基板的导电层之间的连接。