公开(公告)号：US20050173057A1

公开(公告)日：2005-08-11

申请号：US10928851

申请日：2004-08-27

申请人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

IPC分类号： H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  B32B31/00

CPC分类号： H01J37/321 ,  B32B38/0008 ,  B32B2310/08 ,  B32B2310/14 ,  B32B2457/14 ,  H01L21/187

摘要： A substrate bonding method for mutually bonding substrates, has a first radiation step for irradiating the surfaces of the individual substrates with an oxygen particle beam, a second radiation step for irradiating the surfaces of the individual substrate with a nitrogen particle beam simultaneously with or subsequently to the first radiation step, and a step for stacking the individual substrates and bringing the surfaces thereof into close contact. Particularly, the substrates which have been irradiated first with an oxygen plasma and subsequently with a nitrogen plasma are stacked and bonded.

摘要翻译： 用于相互接合基板的基板接合方法具有用氧粒子束照射各个基板的表面的第一辐射步骤，用于将氮化物颗粒束的表面与氮颗粒束的表面同时或随后地照射的第二辐射步骤 第一辐射步骤和用于堆叠各个基板并使其表面紧密接触的步骤。 特别地，首先用氧等离子体并随后用氮等离子体照射的基板被层叠并结合。

公开(公告)号：US06465892B1

公开(公告)日：2002-10-15

申请号：US09548916

申请日：2000-04-13

申请人： Tadatomo Suga

发明人： Tadatomo Suga

IPC分类号： H01L2348

CPC分类号： H01L25/0657 ,  H01L21/768 ,  H01L23/552 ,  H01L23/585 ,  H01L24/48 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/05547 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/85399 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each carrying semiconductor elements, are bonded together. On each semiconductor substrate is deposited an insulating layer through which is formed a connection wiring passed through the insulating layer so as to be connected to the interconnection layer of the semiconductor element. On a junction surface of at least one of the semiconductor substrates is formed an electrically conductive layer of an electrically conductive material in which an opening is bored in association with the connection wiring. The semiconductor substrates are bonded together by the solid state bonding technique to interconnect the connection wirings formed on each semiconductor substrate.

摘要翻译： 在多层互连结构中，要减少布线长度，并且要相互连接，同时需要对辐射噪声采取措施。 为此，公开了一种半导体器件，其中各自承载半导体元件的多个半导体衬底结合在一起。 在每个半导体衬底上沉积绝缘层，通过该绝缘层形成通过绝缘层的连接布线，以便连接到半导体元件的互连层。 在至少一个半导体衬底的接合表面上形成导电材料的导电层，其中开口与连接布线相连接。 通过固态接合技术将半导体衬底接合在一起，以互连形成在每个半导体衬底上的连接布线。

公开(公告)号：US10204785B2

公开(公告)日：2019-02-12

申请号：US15810932

申请日：2017-11-13

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32 ,  H01L21/67 ,  H01L25/065 ,  H01L21/762

摘要： A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

公开(公告)号：US09962908B2

公开(公告)日：2018-05-08

申请号：US14391568

申请日：2013-04-09

申请人： Tadatomo Suga ,  LAN TECHNICAL SERVICE CO., LTD.

发明人： Tadatomo Suga ,  Yoshiie Matsumoto

IPC分类号： B32B15/08 ,  B29C65/14 ,  B29C65/00 ,  C08J5/12 ,  B29C59/14 ,  B32B15/09 ,  B32B27/28 ,  B32B27/36 ,  B32B37/24 ,  B32B38/00 ,  B32B27/08 ,  B32B17/06 ,  B32B37/18 ,  B32B37/20 ,  B32B37/02 ,  B32B37/00

CPC分类号： B32B15/08 ,  B29C59/14 ,  B29C65/1432 ,  B29C65/1467 ,  B29C66/028 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/71 ,  B29C66/712 ,  B29C66/72321 ,  B29C66/72325 ,  B29C66/72326 ,  B29C66/73161 ,  B29C66/7373 ,  B29C66/7392 ,  B29C66/73921 ,  B29C66/7394 ,  B29C66/73941 ,  B29C66/74 ,  B29C66/7461 ,  B29C66/74611 ,  B29C66/7465 ,  B29C66/8221 ,  B29C66/83241 ,  B29C66/83413 ,  B32B15/09 ,  B32B17/064 ,  B32B27/08 ,  B32B27/281 ,  B32B27/36 ,  B32B37/0076 ,  B32B37/02 ,  B32B37/182 ,  B32B37/203 ,  B32B37/24 ,  B32B38/00 ,  B32B2037/0092 ,  B32B2037/243 ,  B32B2250/03 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2307/546 ,  B32B2309/68 ,  B32B2310/0881 ,  B32B2457/20 ,  B32B2457/206 ,  C08J5/12 ,  Y10T156/10 ,  Y10T428/31681 ,  B29K2067/003 ,  B29K2079/08 ,  B29K2067/00 ,  B29K2067/006

摘要： The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

公开(公告)号：US20150171365A1

公开(公告)日：2015-06-18

申请号：US14407721

申请日：2013-06-14

申请人： Tadatomo SUGA ,  LAN TECHNICAL SERVICE CO., LTD.

发明人： Tadatomo Suga ,  Yoshiie Matsumoto

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5246 ,  H01L51/525 ,  H01L51/56 ,  H05B33/04 ,  H05B33/10

摘要： [Problem] The aim of the invention is to provide a method of sealing an electronic element such as an organic EL element using a normal temperature bonding method that enables bonding at low temperature and in which permeation of external gases such as hydrogen or oxygen through the sealed section (dam) formed by the organic material, or the junction interface of the sealed section and a cover substrate is suppressed. [Solution] A method of sealing an electronic element comprises a step of forming a sealing section by forming a sealing section including an organic material on the surface of a first substrate formed with the electronic element, surrounding this electronic element with a thickness that is larger than that of this electronic element; a step of forming a first inorganic material layer in which a first inorganic material layer is formed at least on the exposed surface of this sealing section; and a substrate bonding step of bonding the first substrate and the second substrate by pushing together the sealing section of the first substrate and the junction location of the second substrate.

摘要翻译： 发明内容本发明的目的是提供一种使用常温接合方法密封诸如有机EL元件的电子元件的方法，该常温接合方法能够在低温下进行接合，并且其中外部气体例如氢气或氧气通过 由有机材料形成的密封部（坝），密封部的接​​合界面和覆盖基板被抑制。 [解决方案]密封电子元件的方法包括通过在形成有电子元件的第一基板的表面上形成包括有机材料的密封部分形成密封部分的步骤，围绕该电子元件的厚度大于 比这个电子元素; 形成第一无机材料层的步骤，其中至少在该密封段的暴露表面上形成第一无机材料层; 以及基板接合步骤，通过将第一基板的密封部分和第二基板的连接位置推在一起来接合第一基板和第二基板。

公开(公告)号：US20140048805A1

公开(公告)日：2014-02-20

申请号：US13982697

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou

IPC分类号： H01L21/322 ,  H01L29/04 ,  H01L29/36 ,  H01L21/263

CPC分类号： H01L21/3221 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  H01J37/317 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/263 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L29/04 ,  H01L29/36

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US07976814B2

公开(公告)日：2011-07-12

申请号：US10574920

申请日：2004-10-06

申请人： Kun'ichi Miyazawa ,  Tadatomo Suga ,  Tadahiko Mashino

发明人： Kun'ichi Miyazawa ,  Tadatomo Suga ,  Tadahiko Mashino

IPC分类号： C01B31/02

CPC分类号： B82Y30/00 ,  C07C67/52 ,  C07C69/608 ,  C07C2604/00

摘要： The invention presents a fullerene derivative fine wire composed of basic component unit of fullerene derivative, being made of acicular crystal of fullerene derivative, as a fine wire showing high crystallinity and semiconductor performance.

摘要翻译： 本发明提供了由富勒烯衍生物的针状结晶构成的富勒烯衍生物的基本成分单元作为显示高结晶性和半导体性能的细线构成的富勒烯衍生物细线。

公开(公告)号：US07078811B2

公开(公告)日：2006-07-18

申请号：US09898082

申请日：2001-07-05

申请人： Tadatomo Suga

发明人： Tadatomo Suga

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L24/31 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5226 ,  H01L25/0657 ,  H01L2224/05572 ,  H01L2224/80895 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2224/05552 ,  H01L2924/00

摘要： There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductor 5 and a grounding wiring layer 10, which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portion 17 since they have a hardness lower than that of a through hole insulator 11 made of silicon nitride. The through hole insulator 11 is selectively etched by a reactive ion etching method until the through hole insulator 11 comes to have a height equal to the height of a bottom portion 19 of the dishing portion 17 of the through hole conductor 5. The through hole conductors 5 and 25 are aligned with each other, and the bonding surfaces 12 and 22 are bonded to each other in a solid state bonding manner.

摘要翻译： 提供了一种用于制造该器件的半导体器件和方法，该器件能够通过将导体彼此牢固地直接接合而实现可靠的电连接，即使通过CMP方法对CMP表面进行了抛光并且彼此固态接合。 通过根据CMP方法进行研磨，由铜制成的通孔导体5和接地布线层10变成凹状，呈碗状，下降，导致凹陷部17由于硬度较低 比由氮化硅制成的通孔绝缘体11的厚度大。 通孔绝缘体11通过反应离子蚀刻法被选择性蚀刻，直到通孔绝缘体11具有与通孔导体5的凹陷部分17的底部19的高度相同的高度。 通孔导体5和25彼此对准，并且接合表面12和22以固态接合方式彼此接合。

公开(公告)号：US10166749B2

公开(公告)日：2019-01-01

申请号：US13982686

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： H01L21/20 ,  B32B38/08 ,  B23K1/20 ,  B23K20/24 ,  H01L21/67 ,  H01L21/762 ,  H01L21/302 ,  H01L21/02 ,  H01L23/525 ,  B32B7/04 ,  H01J37/317 ,  B23K101/36 ,  H01L23/14

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US20150048523A1

公开(公告)日：2015-02-19

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L25/065 ,  B23K31/02 ,  H01L21/66 ,  H01L23/00 ,  H01L25/00 ,  H01L25/10 ,  B23K37/04 ,  B23K37/00

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。