公开(公告)号：US07361977B2

公开(公告)日：2008-04-22

申请号：US11204645

申请日：2005-08-15

申请人： Bernhard P. Lange

发明人： Bernhard P. Lange

IPC分类号： H01L23/495 ,  H01L23/52 ,  H01L29/40 ,  H01L23/48

CPC分类号： H01L23/49541 ,  H01L23/49548 ,  H01L23/645 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/2065 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A device comprising a semiconductor chip (110) having a side edge (111) and a plurality of metal bond pads (120, 121) near the edge; the pads are aligned to form rows (130, 131) parallel to the edge. The device further includes a leadframe (100) having leads (140 . . . ) oriented with one end (140a . . . ) towards the chip edge and spaced from it by a gap (150); the chip is attached to the leadframe. Ends of selected leads are connected by a metal cross bar (160) parallel to the chip edge. Substantially parallel bond wires (170) are crossing the gap to connect each chip pad either to the crossbar or to a non-selected lead end. In a preferred lead arrangement, the selected leads alternate with non-selected leads.

摘要翻译： 一种装置，包括具有侧边缘（111）和靠近边缘的多个金属接合焊盘（120,121）的半导体芯片（110） 衬垫对齐以形成平行于边缘的行（130,131）。 所述装置还包括引线框架（100），所述引线框架（100）具有朝向所述芯片边缘并且由间隙（150）与所述引线框架（100）间隔开的引线（140 ...）。 芯片连接到引线框。 所选导线的端部通过平行于芯片边缘的金属横杆（160）连接。 基本上平行的接合线（170）正在穿过间隙，以将每个芯片焊盘连接到横杆或未选择的引线端。 在优选的引线装置中，所选择的引线与未选择的引线交替。

公开(公告)号：US20050269590A1

公开(公告)日：2005-12-08

申请号：US11194701

申请日：2005-08-02

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/04 ,  H01L23/49 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L29/22 ,  H03F3/195 ,  H03F3/60 ,  H05K1/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/40

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20240079340A1

公开(公告)日：2024-03-07

申请号：US18459520

申请日：2023-09-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyunsoo CHUNG ,  Younglyong KIM ,  Inhyo HWANG

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H10B80/00

CPC分类号： H01L23/5386 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L25/0652 ,  H10B80/00 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/30505 ,  H01L2224/32146 ,  H01L2224/32225 ,  H01L2224/33051 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/065 ,  H01L2924/1436 ,  H01L2924/2064 ,  H01L2924/2065

摘要： A semiconductor package includes: a base substrate; an interposer disposed on the base substrate, wherein the interposer includes a plurality of recesses in a bottom surface thereof; a semiconductor chip disposed on the interposer; a plurality of interposer connection terminals between the interposer and the base substrate, wherein the plurality of interposer connection terminals electrically connect the interposer to the base substrate; and a first underfill layer disposed between the interposer and the base substrate, wherein the first underfill layer at least partially surrounds the plurality of interposer connection terminals, wherein the first underfill layer at least partially surrounds a side surface of each of the plurality of recesses and has a slope declining from the bottom surface of the interposer to a top surface of the base substrate.

公开(公告)号：US20180158759A1

公开(公告)日：2018-06-07

申请号：US15883151

申请日：2018-01-30

申请人： Infineon Technologies AG

发明人： Georg MEYER-BERG

IPC分类号： H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L23/31

CPC分类号： H01L23/49513 ,  H01L21/4821 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/32 ,  H01L24/82 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/24155 ,  H01L2224/29082 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1715 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2924/1776 ,  H01L2924/17763 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/00

摘要： Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.

公开(公告)号：US20160190044A1

公开(公告)日：2016-06-30

申请号：US14827361

申请日：2015-08-17

申请人： Infineon Technologies AG

发明人： Georg Meyer-Berg

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L23/49513 ,  H01L21/4821 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/32 ,  H01L24/82 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/24155 ,  H01L2224/29082 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1715 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2924/1776 ,  H01L2924/17763 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/00

摘要： Various embodiments provide for a chip package consisting of a layer over a carrier, further carrier material over the layer, wherein one or more portions of the further carrier material is removed, and a chip with one or more contact pads, where the chip is adhered to the carrier via the layer. A wafer level package consisting of a plurality of chips adhered to the carrier via a plurality of portions of the layer released from the further carrier material is also provided for.

摘要翻译： 各种实施例提供了由载体上的层构成的芯片封装，在该层上的另外的载体材料，其中移除其它载体材料的一个或多个部分以及具有一个或多个接触焊盘的芯片，其中芯片被粘附 通过层到载体。 还提供了由多个芯片组成的晶片级封装，所述芯片通过从所述另外的载体材料释放的所述层的多个部分粘附到所述载体。

公开(公告)号：US09266196B2

公开(公告)日：2016-02-23

申请号：US14613256

申请日：2015-02-03

申请人： Senju Metal Industry Co., Ltd.

发明人： Takashi Akagawa ,  Hiroyoshi Kawasaki ,  Kazuhiko Matsui ,  Yuichi Koikeda ,  Masaru Sasaki ,  Hiroyuki Yamasaki ,  Takahiro Roppongi ,  Daisuke Soma ,  Isamu Sato

IPC分类号： H01B5/00 ,  H01L23/48 ,  B32B15/04 ,  B23K35/02 ,  B23K35/00 ,  C22C5/06 ,  B23K35/30 ,  H01B1/02 ,  H01L23/00 ,  C22C19/03 ,  C22C19/07

CPC分类号： B23K35/025 ,  B22F1/0062 ,  B22F1/0074 ,  B22F1/02 ,  B23K35/00 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3033 ,  B23K35/3046 ,  C22C5/06 ,  C22C13/00 ,  C22C19/03 ,  C22C19/07 ,  H01B1/02 ,  H01L24/13 ,  H01L2224/13014 ,  H01L2224/13139 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0109 ,  H01L2924/01092 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065

摘要： Providing an Ag ball having a low alpha dose and a high sphericity regardless of impurity elements having an amount equal to or more than a predetermined value except for Ag. In order to suppress a soft error and reduce an connection fault, a content of U is equal to or less than 5 ppb, a content of Th is equal to or less than 5 ppb, a purity is equal to or more than 99.9% but equal to or less than 99.9995%, an alpha dose is equal to or less than 0.0200 cph/cm2, a content of either Pb or Bi or a total content of both Pb and Bi is equal to or more than 1 ppm, and a sphericity is equal to or more than 0.90.

摘要翻译： 提供具有低α剂量和高球形度的Ag球，而不管除了Ag之外具有等于或大于预定值的量的杂质元素。 为了抑制软错误并减少连接故障，U的含量等于或小于5ppb，Th的含量等于或小于5ppb，纯度等于或大于99.9％，但是 等于或小于99.9995％，α剂量等于或小于0.0200cph / cm 2，Pb或Bi的含量或Pb和Bi的总含量等于或大于1ppm，并且球形度 等于或大于0.90。

公开(公告)号：US09112059B2

公开(公告)日：2015-08-18

申请号：US13349155

申请日：2012-01-12

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

IPC分类号： H01L21/00 ,  H01L23/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.

摘要翻译： 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。

公开(公告)号：US09099331B2

公开(公告)日：2015-08-04

申请号：US14585334

申请日：2014-12-30

申请人： ROHM CO., LTD.

发明人： Keiji Okumura

IPC分类号： H01L23/495 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L25/072 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/04 ,  H01L25/18 ,  H01L27/0629 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48138 ,  H01L2224/48139 ,  H01L2224/48157 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48471 ,  H01L2224/4903 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/85423 ,  H01L2224/85447 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/00015 ,  H01L2924/00012

摘要： Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package (4) includes a die pad (61), a source lead (63), a first MOSFET (11), and a first Schottky barrier diode (21). A source electrode (11S) of the first MOSFET (11), an anode electrode (21A) of the first Schottky barrier diode (21), and the source lead (63) are electrically connected by the bonding wire (31), one end of which is bonded to the source electrode (11S) of the first MOSFET (11), the other end of which is bonded to the source lead (63), and the center of which is bonded to the anode electrode (21A) of the first Schottky barrier diode (21).

公开(公告)号：US20140217570A1

公开(公告)日：2014-08-07

申请号：US14158690

申请日：2014-01-17

申请人： SCHOTT AG

发明人： Robert Hettler ,  Kenneth Tan ,  Georg Mittermeyer ,  Karsten Droegemueller

IPC分类号： H01L23/10 ,  H01L23/08 ,  H01L23/66

CPC分类号： H01L23/08 ,  H01L23/045 ,  H01L23/3157 ,  H01L23/64 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6622 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48245 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/2065 ,  H01L2924/20649 ,  H01L2924/20645 ,  H01L2924/20644 ,  H01L2924/20643 ,  H01L2224/45099 ,  H01L2924/00

摘要： A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.

摘要翻译： 提供了在上表面具有接合线的晶体管轮廓外壳。 接合线的长度减小，并且在与接合端相对的端部处具有连续引线，其具有多余的长度。

公开(公告)号：US08102061B2

公开(公告)日：2012-01-24

申请号：US12670253

申请日：2008-07-24

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.

摘要翻译： 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。