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公开(公告)号：US20170053890A1
公开(公告)日：2017-02-23
申请号：US15345134
申请日：2016-11-07
发明人： Wen-Chien CHANG , Hsiang-Tai LU , Dai-Jang CHEN , Chih-Hsien LIN
IPC分类号： H01L23/00 , H01L25/065 , H01L23/498 , H01L25/00 , H01L23/60
CPC分类号： H01L24/75 , H01L21/67207 , H01L23/49827 , H01L23/60 , H01L24/03 , H01L24/04 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0346 , H01L2224/0361 , H01L2224/0362 , H01L2224/038 , H01L2224/03912 , H01L2224/0401 , H01L2224/05009 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/0558 , H01L2224/05655 , H01L2224/05666 , H01L2224/1146 , H01L2224/11849 , H01L2224/13005 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/75101 , H01L2224/752 , H01L2224/81009 , H01L2225/06513 , H01L2225/06541 , H01L2924/1305 , H01L2924/13091 , H01L2924/15787 , H01L2924/15788 , H01L2924/30205 , H05F3/02 , Y10T29/52 , H01L2924/00 , H01L2924/014 , H01L2924/00014 , H01L2924/207 , H01L2924/01029 , H01L2924/01047
摘要： In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.
摘要翻译： 在一个过程中，在衬底中形成至少一个电路元件。 导电层形成在衬底上并与至少一个电路元件电接触。 静电电荷经由导电层从基板排出。
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公开(公告)号：US09576890B2
公开(公告)日：2017-02-21
申请号：US15241777
申请日：2016-08-19
发明人： Eiji Hayashi , Kyo Go , Kozo Harada , Shinji Baba
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/498 , H01L23/31 , H01L21/56 , H01L23/373
CPC分类号： H01L23/49827 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/3142 , H01L23/3157 , H01L23/36 , H01L23/373 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49894 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/81 , H01L2021/6015 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05024 , H01L2224/05025 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/11003 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/81909 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/15312 , H01L2924/15724 , H01L2924/15747 , H01L2924/1579 , H01L2924/351 , H05K1/0366 , H05K3/4602 , H05K2201/029 , H01L2924/0132 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/0665 , H01L2924/00014
摘要： Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
摘要翻译： 对于具有布线基板的半导体器件，通过其与布线基板进行倒装芯片接合的半导体芯片和粘附到半导体芯片的背面的散热器，并且省略了用于加强布线的加强件 基板并且保持散热器的表面平滑度，布线基板具有分别形成直径不同的通孔的多个绝缘基板，并且每个绝缘基板包含玻璃布。
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公开(公告)号：US09576841B2
公开(公告)日：2017-02-21
申请号：US15174366
申请日：2016-06-06
申请人： ROHM CO., LTD.
发明人： Kenichi Yoshimochi
IPC分类号： H01L21/762 , H01L29/739 , H01L29/866 , H01L29/06 , H01L29/66 , H01L29/78 , H01L23/482 , H01L27/06 , H01L21/763 , H01L27/02 , H01L27/118 , H01L29/40 , H01L29/423 , H01L29/08 , H01L23/00
CPC分类号： H01L21/76237 , H01L21/76205 , H01L21/763 , H01L23/4824 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/94 , H01L27/0207 , H01L27/0629 , H01L27/0635 , H01L27/0664 , H01L27/11896 , H01L29/0649 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/66106 , H01L29/66333 , H01L29/66348 , H01L29/66666 , H01L29/66734 , H01L29/7397 , H01L29/7808 , H01L29/7811 , H01L29/7813 , H01L29/866 , H01L2224/02166 , H01L2224/0345 , H01L2224/036 , H01L2224/039 , H01L2224/04042 , H01L2224/05552 , H01L2224/05559 , H01L2224/05572 , H01L2224/05624 , H01L2224/0603 , H01L2224/4911 , H01L2224/9212 , H01L2224/94 , H01L2924/00014 , H01L2924/12035 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2224/03 , H01L2924/01029 , H01L21/78 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.
摘要翻译： 半导体器件包括：第一导电型半导体层，包括其中形成有杂质区的晶体管的有源区和围绕有源区的边缘区;形成在有源区和边界之间的第二导电型沟道层; 形成半导体层的前表面，形成在有源区中的至少一个栅极沟槽，以从半导体层的前表面延伸通过沟道层，形成在栅极沟槽的内表面上的栅极绝缘膜， 形成在栅极沟槽中的栅极绝缘膜内部的栅极电极，以及布置在有源区域和边缘区域之间的至少一个隔离沟槽，以围绕有源区域并且从半导体层的前表面延伸穿过沟道层， 隔离沟槽的深度等于栅极沟槽的深度。
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公开(公告)号：US20170047298A1
公开(公告)日：2017-02-16
申请号：US15339257
申请日：2016-10-31
发明人： Yu-Feng Chen , Yen-Liang Lin , Tin-Hao Kuo , Sheng-Yu Wu , Chen-Shien Chen
CPC分类号： H01L23/562 , H01L21/768 , H01L23/3157 , H01L23/3171 , H01L23/485 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/0231 , H01L2224/0237 , H01L2224/0361 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/0558 , H01L2224/1146 , H01L2224/1147 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/13171 , H01L2224/13172 , H01L2224/13184 , H01L2224/16238 , H01L2924/00014 , H01L2924/01322 , H01L2924/381 , H01L2924/207 , H01L2924/01079 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552 , H01L2924/00
摘要： A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 μm. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.
摘要翻译： 提供一种用于防止钝化层中的裂纹的系统和方法。 在一个实施例中，接触垫具有第一直径，并且穿过钝化层的开口具有第二直径，其中第一直径大于第二直径大约10μm的第一距离。 在另一个实施例中，通过该开口形成底部凹凸金属化，并且下凸块金属化具有大于第一直径的第三直径约5微米的第二距离。 在另一个实施例中，第一距离和第二距离之和大于约15μm。 在另一个实施例中，下凸点金属化具有小于接触焊盘的尺寸的第一尺寸和大于接触焊盘尺寸的第二尺寸。
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85.发明授权公开(公告)号：US09570430B2
公开(公告)日：2017-02-14
申请号：US14709924
申请日：2015-05-12
IPC分类号： H01L25/00 , H01L23/00 , H01L25/065 , H01L23/31
CPC分类号： H01L25/50 , H01L23/3114 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L2224/03009 , H01L2224/0346 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/05572 , H01L2224/0603 , H01L2224/06051 , H01L2224/08147 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/131 , H01L2224/13147 , H01L2224/16145 , H01L2224/32225 , H01L2224/48097 , H01L2224/48227 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/81002 , H01L2224/81191 , H01L2224/81815 , H01L2224/85002 , H01L2224/92127 , H01L2224/94 , H01L2225/0651 , H01L2225/06513 , H01L2225/06568 , H01L2924/00014 , H01L2924/14 , H01L2224/11 , H01L2224/03 , H01L2224/05599 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Articles including bonded metal structures and methods of preparing the same are provided herein. In an embodiment, a method of preparing an article that includes bonded metal structures includes providing a first substrate. A first metal structure and a second metal structure are formed on the first substrate. The first metal structure and the second metal structure each include an exposed contact surface. A bond mask is formed over the contact surface of the first metal structure. A second substrate is bonded to the first substrate through the exposed contact surface of the second metal structure. The bond mask remains disposed over the exposed contact surface of the second metal structure during bonding of the second substrate to the first substrate. A wire is bonded to the exposed contact surface of the first metal structure.
摘要翻译： 本文提供了包含粘结金属结构的物质及其制备方法。 在一个实施方案中，制备包含粘合金属结构的制品的方法包括提供第一基底。 在第一基板上形成第一金属结构和第二金属结构。 第一金属结构和第二金属结构各自包括暴露的接触表面。 在第一金属结构的接触表面上形成接合掩模。 第二衬底通过第二金属结构的暴露的接触表面结合到第一衬底。 在第二衬底与第一衬底接合期间，接合掩模保持设置在第二金属结构的暴露的接触表面上。 线接合到第一金属结构的暴露的接触表面。
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公开(公告)号：US20170025390A1
公开(公告)日：2017-01-26
申请号：US15286086
申请日：2016-10-05
申请人： Invensas Corporation
发明人： Belgacem Haba , Richard Dewitt Crisp , Wael Zohni
IPC分类号： H01L25/065 , H01L25/00
CPC分类号： H01L25/0657 , H01L21/4846 , H01L21/565 , H01L23/293 , H01L23/3128 , H01L23/3171 , H01L23/49 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/742 , H01L24/745 , H01L24/81 , H01L25/50 , H01L2224/0401 , H01L2224/05555 , H01L2224/05571 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1134 , H01L2224/1184 , H01L2224/1191 , H01L2224/13005 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13022 , H01L2224/13076 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1357 , H01L2224/13624 , H01L2224/13655 , H01L2224/1369 , H01L2224/14051 , H01L2224/16105 , H01L2224/16108 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17051 , H01L2224/32145 , H01L2224/73103 , H01L2224/73203 , H01L2224/73253 , H01L2224/742 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/9202 , H01L2224/92142 , H01L2224/92143 , H01L2224/97 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06555 , H01L2225/06568 , H01L2225/06582 , H01L2225/06589 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2924/207 , H01L2224/83 , H01L2224/11 , H01L2224/81 , H01L2924/00
摘要： A microelectronic structure includes a semiconductor having conductive elements at a first surface. Wire bonds have bases joined to the conductive elements and free ends remote from the bases, the free ends being remote from the substrate and the bases and including end surfaces. The wire bonds define edge surfaces between the bases and end surfaces thereof. A compliant material layer extends along the edge surfaces within first portions of the wire bonds at least adjacent the bases thereof and fills spaces between the first portions of the wire bonds such that the first portions of the wire bonds are separated from one another by the compliant material layer. Second portions of the wire bonds are defined by the end surfaces and portions of the edge surfaces adjacent the end surfaces that are extend from a third surface of the compliant later.
摘要翻译： 微电子结构包括在第一表面具有导电元件的半导体。 线接合具有接合到导电元件和远离基座的自由端的基部，自由端远离基板和基部并且包括端面。 线接合限定其基端和端面之间的边缘表面。 顺应性材料层沿着线的第一部分中的边缘表面延伸，至少邻近其底部，并且填充引线接合的第一部分之间的空间，使得引线接合的第一部分通过顺应性 材料层。 线接合的第二部分由邻近端表面的端表面和边缘表面的部分限定，其从较柔性的第三表面延伸。
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公开(公告)号：US20170025371A1
公开(公告)日：2017-01-26
申请号：US15194160
申请日：2016-06-27
发明人： Jie CHEN , Hsien-Wei CHEN
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L21/768 , H01L23/293 , H01L23/3114 , H01L23/3192 , H01L23/485 , H01L23/525 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/02255 , H01L2224/0231 , H01L2224/02333 , H01L2224/0235 , H01L2224/02351 , H01L2224/0236 , H01L2224/0239 , H01L2224/0382 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05555 , H01L2224/05568 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05649 , H01L2224/05655 , H01L2224/10145 , H01L2224/11015 , H01L2224/11334 , H01L2224/11849 , H01L2224/13014 , H01L2224/13022 , H01L2224/13023 , H01L2224/13024 , H01L2224/13027 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/05042 , H01L2924/05442 , H01L2924/059 , H01L2924/05994 , H01L2924/06 , H01L2924/0665 , H01L2924/07025 , H01L2924/2064 , H01L2924/00014 , H01L2924/014
摘要： A method for manufacturing semiconductor devices is provided. In the method, a conductive pad and a metal protrusion pattern are formed in a metallization layer. A passivation layer is conformally deposited over the metallization, and a protection layer is conformity deposited over the passivation layer. Further, a post-passivation interconnect structure (PPI) is conformally formed on the protection layer, and the PPI structure includes a landing pad region, a protrusion pattern over at least a portion of the landing pad region and a connection line electrically connected to the conductive pad. A solder bump is then placed on the landing pad region in contact with the protrusion pattern of PPI structure. A semiconductor device with bum stop structure is also provided.
摘要翻译： 提供一种半导体器件的制造方法。 在该方法中，在金属化层中形成导电焊盘和金属突起图案。 钝化层被共形沉积在金属化之上，并且保护层在钝化层上沉积。 此外，钝化后互连结构（PPI）保形地形成在保护层上，并且PPI结构包括着陆焊盘区域，在着陆焊盘区域的至少一部分上的突出图案以及电连接到 导电垫。 然后将焊料凸块放置在与PPI结构的突出图案接触的着陆焊盘区域上。 还提供了具有烧结停止结构的半导体器件。
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公开(公告)号：US09553040B2
公开(公告)日：2017-01-24
申请号：US13835701
申请日：2013-03-15
申请人： MediaTek Inc.
发明人： Wen-Sung Hsu , Tzu-Hung Lin , Ta-Jen Yu
IPC分类号： H01L23/498 , H01L23/31 , H01L23/00
CPC分类号： H01L23/49811 , H01L21/563 , H01L23/3142 , H01L23/3171 , H01L23/3178 , H01L23/3192 , H01L23/49838 , H01L24/05 , H01L24/08 , H01L24/09 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/26 , H01L24/32 , H01L24/73 , H01L2224/02331 , H01L2224/0401 , H01L2224/05012 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05552 , H01L2224/05569 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/13012 , H01L2224/13015 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16113 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/26175 , H01L2224/2919 , H01L2224/73204 , H01L2224/81385 , H01L2924/00014 , H01L2924/181 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： The invention provides a semiconductor package. The semiconductor package includes a semiconductor package includes a substrate having a die attach surface. A die is mounted on die attach surface of the substrate via a conductive pillar bump. The die comprises a metal pad electrically coupling to the conductive pillar bump, wherein the metal pad has a first edge and a second edge substantially vertical to the first edge, wherein the length of the first edge is different from that of the second edge from a plan view.
摘要翻译： 本发明提供一种半导体封装。 半导体封装包括半导体封装，其包括具有管芯附接表面的衬底。 模具通过导电柱凸块安装在基板的芯片附着表面上。 芯片包括电耦合到导电柱凸起的金属焊盘，其中金属焊盘具有基本上垂直于第一边缘的第一边缘和第二边缘，其中第一边缘的长度与第二边缘的长度不同于 平面图。
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公开(公告)号：US09548282B2
公开(公告)日：2017-01-17
申请号：US14440872
申请日：2013-10-30
发明人： Chang-Ming Lin , Lei Shi , Yujuan Tao
CPC分类号： H01L24/13 , H01L23/3114 , H01L23/3171 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03472 , H01L2224/03618 , H01L2224/0401 , H01L2224/05008 , H01L2224/05011 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05571 , H01L2224/05572 , H01L2224/05655 , H01L2224/1132 , H01L2224/11462 , H01L2224/115 , H01L2224/11849 , H01L2224/13006 , H01L2224/13011 , H01L2224/13014 , H01L2224/13015 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13021 , H01L2224/13023 , H01L2224/13076 , H01L2224/13111 , H01L2224/13147 , H01L2224/16 , H01L2225/06513 , H01L2924/00012
摘要： A semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate (300) provided with a plurality of pads (301), columnar electrodes on the pads (301) and a solder ball (321) provided on the columnar electrode. The columnar electrode comprises a main body (307) and a groove in the main body (307), and an opening of the groove is overlapped with the top surface of the columnar electrode. The solder ball (321) comprises a metal bump (320) arranged on the top of the columnar electrode and a filling part (319) filled in the groove. The solder ball and the columnar electrode form a structure similar to a bolt; thus the binding force between the solder ball and the columnar electrode is improved.
摘要翻译： 半导体器件及其制造方法。 半导体器件包括设置有多个焊盘（301）的半导体衬底（300），焊盘上的柱状电极（301）和设置在柱状电极上的焊球（321）。 柱状电极包括主体（307）和主体（307）中的凹槽，并且凹槽的开口与柱状电极的顶表面重叠。 焊球（321）包括布置在柱状电极的顶部上的金属凸块（320）和填充在凹槽中的填充部分（319）。 焊球和柱状电极形成类似于螺栓的结构; 因此焊球和柱状电极之间的结合力提高。
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公开(公告)号：US20170012012A1
公开(公告)日：2017-01-12
申请号：US14793813
申请日：2015-07-08
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L21/4853 , H01L21/76834 , H01L21/78 , H01L23/49844 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/94 , H01L2224/0345 , H01L2224/0346 , H01L2224/036 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05541 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/0569 , H01L2224/1145 , H01L2224/1146 , H01L2224/116 , H01L2224/13005 , H01L2224/13007 , H01L2224/13016 , H01L2224/13144 , H01L2224/13147 , H01L2224/16227 , H01L2224/16245 , H01L2224/81191 , H01L2224/814 , H01L2224/94 , H01L2924/01022 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/2064 , H01L2924/3512 , H01L2924/00014 , H01L2924/013 , H01L2924/014 , H01L2224/11 , H01L2224/03 , H01L2924/207
摘要： A semiconductor device having a terminal site (100) including a flat pad (110) of a first metal covered by a layer (130) of dielectric material, the layer over the pad parallel to the pad and having a window of a first diameter (132) exposing the surface of the underlying pad. The terminal site further has a patch-shaped film (140) of a second metal covering the surface of the exposed first metal and the surface of an annulus of the dielectric layer framing the window, the film patch having a second diameter (141) greater than the first diameter; and a bump (150) of a third metal adhering to the film, the bump having a third diameter (151) smaller than the second diameter, whereby the film protrudes like a flange from the bump.
摘要翻译： 一种半导体器件，具有端子部位（100），该端子部位（100）包括由电介质材料层（130）覆盖的第一金属的平坦焊盘（110），所述焊盘上方的层平行于焊盘并具有第一直径的窗口 132）暴露下面的垫的表面。 终端位置还具有覆盖暴露的第一金属的表面的第二金属的片状膜（140）和构成窗口的电介质层的环的表面，膜片具有更大的第二直径（141） 比第一个直径; 以及附着在所述膜上的第三金属的凸块（150），所述凸块具有比所述第二直径小的第三直径（151），由此所述膜从所述凸块凸出成凸缘。
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