Abstract:
In a probe card assembly, a series of probe elements can be arrayed on a silicon space transformer. The silicon space transformer can be fabricated with an array of primary contacts in a very tight pitch, comparable to the pitch of a semiconductor device. One preferred primary contact is a resilient spring contact. Conductive elements in the space transformer are routed to second contacts at a more relaxed pitch. In one preferred embodiment, the second contacts are suitable for directly attaching a ribbon cable, which in turn can be connected to provide selective connection to each primary contact. The silicon space transformer is mounted in a fixture that provides for resilient connection to a wafer or device to be tested. This fixture can be adjusted to planarize the primary contacts with the plane of a support probe card board.
Abstract:
The invention provides an ultrasonic transducer assembly for a bonding apparatus, comprising a bonding tool mounted to an amplifying horn secured between first and second ultrasonic-generating means. A method of forming a transducer for a bonding apparatus is also provided, comprising the steps of providing an amplifying horn, securing first and second ultrasonic-generating means to the amplifying horn such that the amplifying horn is located between said first and second ultrasonic-generating means and mounting a bonding tool to the amplifying horn.
Abstract:
Spring contact elements are attached to terminals of an electronic component, which may be a semiconductor die. The spring contact elements may comprise a flexible precursor element. The precursor element may be over coated with a resilient material. The spring contact elements may be elongate and attached to the terminals at one end. The other end of the spring contacts may be spaced away from the electronic component.
Abstract:
Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.
Abstract:
An apparatus and method of forming improved wire bonds between the contact pads on semiconductor devices and individual lead frame fingers of a lead frame. The apparatus and method include the use of a penetrating individual independent lead finger clamp during the wire bonding process to provide increased stability of the individual lead finger for improved bonding by the clamp penetrating a portion of the lead finger being bonded. If desired, the apparatus and method also provide for the use of either a penetrating or nonpenetrating fixed clamp for the lead fingers during the wire bonding process in addition to the penetrating individual independent lead finger clamp during the wire bonding process to provide increased stability of the individual lead finger for improved bonding.
Abstract:
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150null C., and can be completed in less than 60 minutes.
Abstract:
An apparatus and method of forming improved wire bonds between the contact pads on semiconductor devices and individual lead frame fingers of a lead frame. The present invention includes the use of an individual independent lead finger clamp during the wire bonding process to provide increased stability of the individual lead finger for improved bonding. If desired, the present invention also provides for the use of a conventional fixed clamp for the lead fingers during the wire bonding process in addition to the individual independent lead finger clamp during the wire bonding process to provide increased stability of the individual lead finger for improved bonding. The present invention also contemplates the replacement of the fixed clamp with another, or second, independent clamp in addition to the first individual independent lead finger clamp during the wire bonding process.
Abstract:
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150° C., and can be comprised in less than 60 minutes.
Abstract:
A method for fabricating a semiconductor device includes removing a predetermined part of an insulative layer of a coated fine metallic wire by irradiating the predetermined part with a laser light and connecting the predetermined part of the fine metallic wire to one of the semiconductor device and a package of the semiconductor device. The insulative layer contains a substance that absorbs the laser light at a predetermined lasing wavelength.
Abstract:
An apparatus and method of supporting lead fingers during a wire bonding process and method of preventing the bonding apparatus and clamping assembly from applying force against the die. The present invention includes the use of a movable arm with a portion that is positionable under a portion of the lead fingers of a lead frame during the wire bonding process to provide increased stability of the lead fingers and prevent the bonding apparatus and clamping assembly from applying force against the die. The present invention also provides for the transfer of heat from the heat block directly to the lead fingers during the wire bonding process. The present invention includes the use of a clamp for stabilizing lead fingers during the wire bonding process.