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公开(公告)号:CN105140136B
公开(公告)日:2018-02-13
申请号:CN201510438605.3
申请日:2010-03-11
申请人: 高通股份有限公司
IPC分类号: H01L21/56 , H01L21/60 , H01L23/31 , H01L23/48 , H01L23/522 , H01L25/065 , H01L25/18
CPC分类号: G06F1/16 , G11C5/147 , H01L21/563 , H01L23/3128 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L23/5223 , H01L23/5227 , H01L23/60 , H01L23/66 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/50 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/16 , H01L25/18 , H01L25/50 , H01L2223/6611 , H01L2223/6666 , H01L2224/02166 , H01L2224/02311 , H01L2224/02313 , H01L2224/02321 , H01L2224/0233 , H01L2224/02331 , H01L2224/0235 , H01L2224/0237 , H01L2224/02371 , H01L2224/02375 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/03612 , H01L2224/03614 , H01L2224/03912 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05024 , H01L2224/05027 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05176 , H01L2224/05181 , H01L2224/05187 , H01L2224/05541 , H01L2224/05548 , H01L2224/05554 , H01L2224/0556 , H01L2224/05567 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/05673 , H01L2224/05676 , H01L2224/11 , H01L2224/11009 , H01L2224/1132 , H01L2224/11334 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/1191 , H01L2224/13 , H01L2224/13006 , H01L2224/1302 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13099 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/13294 , H01L2224/133 , H01L2224/13311 , H01L2224/13609 , H01L2224/1403 , H01L2224/1411 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/16265 , H01L2224/17181 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/293 , H01L2224/29339 , H01L2224/32105 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48111 , H01L2224/48145 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48669 , H01L2224/48764 , H01L2224/48769 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/4911 , H01L2224/49175 , H01L2224/4918 , H01L2224/73203 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/81191 , H01L2224/81411 , H01L2224/81444 , H01L2224/81801 , H01L2224/81815 , H01L2224/8185 , H01L2224/81895 , H01L2224/81903 , H01L2224/83101 , H01L2224/83104 , H01L2224/83851 , H01L2224/92 , H01L2224/9202 , H01L2224/92125 , H01L2224/92127 , H01L2224/92147 , H01L2224/92225 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06562 , H01L2225/06589 , H01L2225/1023 , H01L2225/1029 , H01L2225/1058 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1421 , H01L2924/1433 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/48869 , H01L2224/48744 , H01L2924/00012 , H01L2224/03 , H01L2224/0361 , H01L2924/0665 , H01L2224/81 , H01L2224/83 , H01L24/78 , H01L2224/85 , H01L21/56 , H01L21/78 , H01L2924/0635 , H01L2924/07025 , H01L21/304 , H01L21/76898 , H01L2224/0231
摘要: 本申请涉及使用顶部后钝化技术和底部结构技术的集成电路芯片。本发明揭示集成电路芯片和芯片封装,其包含所述集成电路芯片的顶部处的过钝化方案和所述集成电路芯片的底部处的底部方案,所述过钝化方案和底部方案使用顶部后钝化技术和底部结构技术。所述集成电路芯片可通过所述过钝化方案或所述底部方案连接到外部电路或结构,例如球栅格阵列(BGA)衬底、印刷电路板、半导体芯片、金属衬底、玻璃衬底或陶瓷衬底。还描述相关的制造技术。
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公开(公告)号:CN104934397B
公开(公告)日:2018-02-09
申请号:CN201510087272.4
申请日:2015-02-25
申请人: 精材科技股份有限公司
IPC分类号: H01L23/488 , H01L23/31 , H01L21/60
CPC分类号: H01L24/14 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L29/0657 , H01L2224/02233 , H01L2224/02313 , H01L2224/0235 , H01L2224/0236 , H01L2224/0237 , H01L2224/02371 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/05647 , H01L2224/05655 , H01L2224/131 , H01L2224/13111 , H01L2224/14155 , H01L2224/14165 , H01L2924/014 , H01L2924/01029 , H01L2924/01013 , H01L2924/00014
摘要: 本发明提供一种晶片封装体及其制造方法。该晶片封装体包含半导体晶片、至少一沟槽、多条第一重布局金属线路以及至少一凸起。半导体晶片具有设置于该半导体晶片的上表面的多个导电垫。沟槽自上表面朝半导体晶片的下表面延伸,且配置于半导体晶片的侧边。多条第一重布局金属线路设置于上表面,所述第一重布局金属线路分别与导电垫电性连接,且分别延伸至沟槽内。凸起设置于沟槽内且位于相邻的第一重布局金属线路之间。本发明能提高晶片封装体的制程良率,并有效降低生产成本。
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公开(公告)号:CN105984219B
公开(公告)日:2017-12-05
申请号:CN201610145036.8
申请日:2016-03-14
申请人: 精工爱普生株式会社
IPC分类号: B41J2/045
CPC分类号: H01L24/13 , B41J2/14233 , B41J2/161 , B41J2/1626 , B41J2/1631 , B41J2002/14241 , B41J2002/14491 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/02313 , H01L2224/0233 , H01L2224/02331 , H01L2224/0235 , H01L2224/02351 , H01L2224/0239 , H01L2224/0401 , H01L2224/04026 , H01L2224/05548 , H01L2224/05553 , H01L2224/05555 , H01L2224/05655 , H01L2224/1161 , H01L2224/11618 , H01L2224/11622 , H01L2224/13008 , H01L2224/1319 , H01L2224/13562 , H01L2224/1357 , H01L2224/13644 , H01L2224/16227 , H01L2224/27618 , H01L2224/27622 , H01L2224/27901 , H01L2224/29007 , H01L2224/29011 , H01L2224/29024 , H01L2224/2919 , H01L2224/29191 , H01L2224/301 , H01L2224/30145 , H01L2224/32237 , H01L2224/73103 , H01L2224/73203 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/81201 , H01L2224/81444 , H01L2224/81903 , H01L2224/83191 , H01L2224/83192 , H01L2224/83201 , H01L2224/83455 , H01L2224/83466 , H01L2224/83471 , H01L2224/83856 , H01L2224/9211 , H01L2224/9212 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/0665 , H01L2924/066 , H01L2924/0635 , H01L2924/07025 , H01L2924/0715 , H01L2924/0615 , H01L2924/01024 , H01L2924/01028 , H01L2924/01079 , H01L2224/27848 , H01L2224/11 , H01L2224/27 , H01L2224/81 , H01L2224/83
摘要: 本发明提供一种能够在将金或其合金用作配线的结构中进一步提高粘合可靠性的电子装置以及电子装置的制造方法。电子装置(14)具备:驱动基板(压力室基板(29)以及振动板(31)),其形成有压电元件(32)以及该压电元件的驱动所涉及的电极配线(44、45);密封板(33),其被接合在该驱动基板上,电极配线以含有金(Au)的配线金属隔着作为基底层的紧贴层(50)而被形成在驱动基板上的方式被形成,并具有去除部(49),该去除部(49)将包括与接合树脂43接合的部分在内的区域中的配线金属的一部分去除而使紧贴层露出。
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公开(公告)号:CN104851859B
公开(公告)日:2017-11-21
申请号:CN201410281358.6
申请日:2014-06-20
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/485 , H01L21/60
CPC分类号: H01L24/02 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/06 , H01L2224/02311 , H01L2224/02313 , H01L2224/02315 , H01L2224/02331 , H01L2224/0235 , H01L2224/0236 , H01L2224/02372 , H01L2224/02381 , H01L2224/0239 , H01L2224/0361 , H01L2224/0362 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05024 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05184 , H01L2224/05569 , H01L2224/05572 , H01L2224/05647 , H01L2924/30101 , H01L2924/30105 , H01L2924/00014
摘要: 本发明提供了一种凸块下金属化结构及其形成方法。凸块下金属化结构具有从上向下看呈圆形或者相邻边之间的角大于90°的多边形的再分布通孔。因此,本发明能够改进之后形成的金属层的阶梯覆盖。
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公开(公告)号:CN107026139A
公开(公告)日:2017-08-08
申请号:CN201610997016.3
申请日:2016-09-29
申请人: 意法半导体股份有限公司
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/02 , H01L21/76852 , H01L21/76885 , H01L23/291 , H01L23/3192 , H01L23/525 , H01L23/5283 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L2224/02181 , H01L2224/0219 , H01L2224/02311 , H01L2224/02315 , H01L2224/02331 , H01L2224/02333 , H01L2224/0235 , H01L2224/02372 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/03015 , H01L2224/0346 , H01L2224/0347 , H01L2224/03614 , H01L2224/03914 , H01L2224/0401 , H01L2224/05007 , H01L2224/05008 , H01L2224/05017 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05548 , H01L2224/05557 , H01L2224/05566 , H01L2224/05568 , H01L2224/05572 , H01L2924/01022 , H01L2924/01029 , H01L2924/01074 , H01L2924/05042 , H01L2924/351 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/05556 , H01L2224/061 , H01L2224/13006 , H01L2924/0001 , H01L2224/13099 , H01L2924/00012
摘要: 本申请涉及制造半导体器件的方法和对应的器件。在一个实施例中,一种方法制造半导体器件,该半导体器件包括具有外围部分的金属化结构,该外围部分具有一个或多个下覆层,该下覆层具有面向外围部分延伸的边缘区域。方法包括:提供牺牲层以覆盖下覆层的边缘区域,在由牺牲层覆盖下覆层的边缘区域的同时提供金属化结构,以及移除牺牲层以使得下覆层的边缘区域面向外围部分延伸而在两者之间没有接触界面,由此避免热机械应力。
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公开(公告)号:CN107026138A
公开(公告)日:2017-08-08
申请号:CN201611091100.5
申请日:2016-12-01
申请人: 联发科技股份有限公司
IPC分类号: H01L23/485 , H01L23/488 , H01L21/48
CPC分类号: H01L24/94 , H01L23/3114 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0214 , H01L2224/02145 , H01L2224/02166 , H01L2224/02181 , H01L2224/0235 , H01L2224/02351 , H01L2224/0236 , H01L2224/02371 , H01L2224/02381 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05082 , H01L2224/05094 , H01L2224/05096 , H01L2224/05569 , H01L2224/05572 , H01L2224/12105 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/94 , H01L2224/11 , H01L2224/03 , H01L2924/00014 , H01L2924/014 , H01L23/485 , H01L21/4814 , H01L23/488
摘要: 本发明公开了晶圆级芯片级封装及其形成方法,其中,所述晶圆级芯片级封装包括:半导体结构;在所述半导体结构上形成的第一焊盘;在所述半导体结构和所述第一焊盘上形成的保护层,其中,所述保护层暴露所述第一焊盘的多个部分;在所述保护层和所述第一焊盘被所述保护层所暴露的部分上形成的导电再分布层;在所述保护层和所述导电再分布层上形成的平面层,所述平面层暴露所述导电再分布层的一部分;在所述平面层和所述导电再分布层被所述平面层所暴露的部分上形成的凸块下金属层;以及在所述凸块下金属层上形成的导电凸块。本发明提供的晶圆级芯片级封装具有较小的尺寸。
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公开(公告)号:CN106601715A
公开(公告)日:2017-04-26
申请号:CN201611190566.0
申请日:2016-12-21
申请人: 成都芯源系统有限公司
IPC分类号: H01L23/498 , H01L21/48
CPC分类号: H01L24/13 , H01L21/56 , H01L23/3171 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0231 , H01L2224/02331 , H01L2224/0235 , H01L2224/02372 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/11 , H01L2224/11019 , H01L2224/1146 , H01L2224/11849 , H01L2224/13017 , H01L2224/13024 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/066 , H01L2924/07025 , H01L2924/14 , H01L2924/2064 , H01L23/49816 , H01L21/4803 , H01L21/4853 , H01L23/49894
摘要: 公开了一种包括再布线层和焊接凸起结构的集成电路芯片及其制作方法。所述集成电路芯片在再布线层上表面以及侧面覆盖第一介质层,以及在第一介质层上表面的部分区域、侧面以及钝化层的部分区域覆盖第二介质层。通过覆盖第一介质层和第二介质层的方法,阻止了再布线层的离子迁移,并且可以有效的防止不同焊接凸起结构由于变形或者溅落所导致的短路现象。
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公开(公告)号:CN104253100B
公开(公告)日:2017-04-12
申请号:CN201410299061.2
申请日:2014-06-27
申请人: 精材科技股份有限公司
IPC分类号: H01L23/488
CPC分类号: H01L23/3171 , H01L23/3114 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/0231 , H01L2224/0235 , H01L2224/02375 , H01L2224/02379 , H01L2224/0345 , H01L2224/0346 , H01L2224/0361 , H01L2224/04042 , H01L2224/05007 , H01L2224/05026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05184 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05571 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06155 , H01L2224/48145 , H01L2224/48227 , H01L2924/00014 , H01L2924/10157 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: 本发明提供一种晶片封装体,包含半导体晶片、绝缘层、重布局金属层以及焊接垫。半导体晶片具有导电垫、内连线结构以及电子元件。电子元件通过内连线结构电性连接导电垫。绝缘层设置于半导体晶片的表面上且具有第一开口以暴露出部分导电垫。重布局金属层设置于绝缘层上且具有对应导电垫的重布局金属线路,重布局金属线路通过第一开口与导电垫连接。焊接垫配置于绝缘层上且位于半导体晶片的一侧。其中,重布局金属线路延伸至焊接垫,使配置于半导体晶片的表面上的导电垫电性连接于该侧的焊接垫。本发明的晶片封装体不仅能够提升焊线打接的效率和良率,还具有较现有技术更长的元件寿命以及更佳的可靠度。
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公开(公告)号:CN104051359B
公开(公告)日:2017-03-01
申请号:CN201410080425.8
申请日:2014-03-06
申请人: 精材科技股份有限公司
CPC分类号: H01L23/552 , H01L21/4814 , H01L21/78 , H01L23/544 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L24/92 , H01L25/0657 , H01L29/0657 , H01L2223/5446 , H01L2224/02313 , H01L2224/0235 , H01L2224/02371 , H01L2224/0239 , H01L2224/03614 , H01L2224/04042 , H01L2224/04105 , H01L2224/05548 , H01L2224/05571 , H01L2224/451 , H01L2224/48225 , H01L2224/48227 , H01L2224/4847 , H01L2224/92 , H01L2924/00014 , H01L2924/10155 , H01L2924/10156 , H01L2924/10157 , H01L2924/13091 , H01L2924/1461 , H01L2924/00 , H01L2924/01029 , H01L2924/01079 , H01L2924/01078 , H01L2924/01028 , H01L2924/0105 , H01L2924/01013 , H01L2924/01047 , H01L2924/01022 , H01L2924/01074 , H01L2924/00012 , H01L2224/85 , H01L2924/014 , H01L2224/85399 , H01L2224/05599
摘要: 本发明提供一种晶片封装体及其形成方法,该晶片封装体包括:一半导体基底,具有一第一表面及一第二表面;一第一凹陷,自该第一表面朝该第二表面延伸;一第二凹陷,自该第一凹陷的一底部朝该第二表面延伸,其中该第一凹陷的一侧壁及该底部与该第二凹陷的一第二侧壁及一第二底部共同形成该半导体基底的一外侧表面;一导线层,设置于该第一表面上,且延伸进入该第一凹陷及/或该第二凹陷;一绝缘层,位于该导线层与该半导体基底之间;以及一金属遮光层,设置于该第一表面上,且具有至少一孔洞,其中该至少一孔洞的形状为一四边形。本发明有助于晶片封装体的缩小化,且可使晶片封装体的可靠度提升。
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公开(公告)号:CN103222050B
公开(公告)日:2016-03-02
申请号:CN201180056162.1
申请日:2011-11-01
申请人: 德克萨斯仪器股份有限公司
CPC分类号: H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L2224/0235 , H01L2224/02375 , H01L2224/0401 , H01L2224/05012 , H01L2224/05015 , H01L2224/05552 , H01L2224/05569 , H01L2224/0601 , H01L2224/06051 , H01L2224/06131 , H01L2224/06135 , H01L2224/06136 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/1401 , H01L2224/14135 , H01L2224/14136 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01043 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要: 一种集成电路(IC)器件(300),其包括具有顶表面(304)的衬底(305),顶表面(304)包括有源电路(309)和多个管芯焊盘(302),有源电路(309)包括多个I/O节点(308),多个管芯焊盘(302)耦合到该多个I/O节点。包括第一介电通孔(312)的第一介电层(306)在多个管芯焊盘上方。包括多个RDL捕获焊盘(318)的重定向层(RDL)(314)经由第一介电通孔耦合到多个管芯焊盘。包括第二介电通孔(322)的第二介电层(320)在多个RDL捕获焊盘上方。第二介电通孔中的至少一个是具有包括一顶端的通孔形状的止裂通孔,该顶端背向IC管芯的中性应力点并沿从该中性应力点到止裂通孔的线条取向,从而面向线条,与线条的角度在±30度的范围内。凸点下金属化(UBM)焊盘(324)经由第二介电通孔耦合到多个RDL捕获焊盘,并且金属键合连接体(326)在该UBM焊盘上。
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