公开(公告)号：US20160260682A1

公开(公告)日：2016-09-08

申请号：US15151384

申请日：2016-05-10

申请人： DECA Technologies Inc.

发明人： Christopher M. Scanlan ,  William Boyd Rogers ,  Craig Bishop

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L21/52

CPC分类号： H01L21/486 ,  H01L21/4853 ,  H01L21/52 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/48 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/03002 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05187 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1316 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2225/1035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2224/0231 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L21/304 ,  H01L23/3164 ,  H01L2224/03 ,  H01L2224/19 ,  H01L2924/00012 ,  H01L2221/68304

摘要： A method of making a semiconductor device can include providing a temporary carrier with a semiconductor die mounting site, and forming conductive interconnects over the temporary carrier in a periphery of the semiconductor die mounting site. A semiconductor die can be mounted at the semiconductor die mounting site. The conductive interconnects and semiconductor die can be encapsulated with mold compound. First ends of the conductive interconnects can be exposed. The temporary carrier can be removed to expose second ends of the conductive interconnects opposite the first ends of the conductive interconnects. The conductive interconnects can be etched to recess the second ends of the conductive interconnects with respect to the mold compound. The conductive interconnects can comprise a first portion, a second portion, and an etch stop layer disposed between the first portion and the second portion.

摘要翻译： 制造半导体器件的方法可以包括提供具有半导体管芯安装位置的临时载体，并且在半导体管芯安装位置的周围在临时载体上形成导电互连。 半导体管芯可以安装在半导体管芯安装位置。 导电互连和半导体管芯可以用模具化合物封装。 可以暴露导电互连的第一端。 可以移除临时载体以暴露与导电互连的第一端相对的导电互连的第二端。 可以蚀刻导电互连以相对于模具化合物凹进导电互连的第二端。 导电互连可以包括设置在第一部分和第二部分之间的第一部分，第二部分和蚀刻停止层。

公开(公告)号：US09406632B2

公开(公告)日：2016-08-02

申请号：US14452219

申请日：2014-08-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tsung-Ding Wang ,  Jung Wei Cheng ,  Bo-I Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L23/3192 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2223/5446 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/94 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/10156 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01046 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/01047

摘要： A semiconductor package includes a passivation layer overlying a semiconductor substrate, a pillar bump overlying the passivation layer, and a molding compound layer overlying the passivation layer and covering a lower portion of the bump. A sidewall of the passivation layer is covered by the molding compound layer.

摘要翻译： 半导体封装包括覆盖半导体衬底的钝化层，覆盖钝化层的柱状凸起，以及覆盖钝化层并覆盖凸起的下部的模塑复合层。 钝化层的侧壁被模塑料层覆盖。

公开(公告)号：US09391028B1

公开(公告)日：2016-07-12

申请号：US14815603

申请日：2015-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Ying-Ju Chen

IPC分类号： H01L21/00 ,  H01L23/544 ,  H01L21/78 ,  H01L21/02 ,  H01L21/302 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/97 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/04105 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/14131 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10156 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/83005

摘要： Dies having alignment marks and methods of forming the same are provided. A method includes forming trenches on a first side of a first workpiece, a die of the first workpiece being interposed between neighboring trenches. A portion of the die is removed to form an alignment mark, the alignment mark extending through an entire thickness of the die. A second side of the first workpiece is thinned until the die is singulated, the second side being opposite the first side.

摘要翻译： 提供具有对准标记的模具及其形成方法。 一种方法包括在第一工件的第一侧上形成沟槽，第一工件的管芯插入相邻沟槽之间。 去除模具的一部分以形成对准标记，对准标记延伸穿过模具的整个厚度。 第一工件的第二面被减薄直到模具被分割为止，第二侧与第一侧相对。

公开(公告)号：US20160163663A1

公开(公告)日：2016-06-09

申请号：US14958922

申请日：2015-12-03

申请人： Samsung Electronics Co., Ltd.

发明人： Gi-bum KIM ,  Sang-hyun LEE ,  Ho-seob LEE

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/13 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/02126 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05576 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/01079

摘要： An embodiment includes a semiconductor light-emitting device comprising: an electrode pad; a first under-barrier metal (UBM) layer stacked on the electrode pad; a second UBM layer stacked on the first UBM layer and having a multilayered structure including at least two layers; and a solder bump disposed on the second UBM layer, wherein adhesion between the second UBM layer and the first UBM layer is higher than adhesion between the first UBM layer and the solder bump.

摘要翻译： 实施例包括半导体发光器件，包括：电极焊盘; 堆叠在所述电极焊盘上的第一下阻挡金属（UBM）层; 第二UBM层，堆叠在第一UBM层上并且具有包括至少两层的多层结构; 以及设置在所述第二UBM层上的焊料凸块，其中所述第二UBM层和所述第一UBM层之间的粘附性高于所述第一UBM层和所述焊料凸块之间的粘附。

公开(公告)号：US09362366B2

公开(公告)日：2016-06-07

申请号：US14428289

申请日：2014-04-21

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Yasuyuki Yanase ,  Tsutomu Kiyosawa

IPC分类号： H01L29/15 ,  H01L29/16 ,  H01L29/06 ,  H01L23/00 ,  H01L21/78 ,  H01L21/04 ,  H01L21/306 ,  H01L21/52 ,  H01L23/495 ,  H01L29/872 ,  H01L21/48 ,  H01L21/304 ,  H01L21/3065 ,  H01L29/45 ,  H01L29/66 ,  H01L23/373 ,  H01L21/683 ,  H01L29/861

CPC分类号： H01L29/1608 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/3043 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/48 ,  H01L21/52 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3735 ,  H01L23/49513 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/91 ,  H01L29/0657 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/861 ,  H01L29/872 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/0508 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/26145 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83365 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/12032 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： An ohmic electrode layer is disposed on a second main surface of a silicon carbide substrate, and a metal electrode layer is disposed on the ohmic electrode layer. A notch is formed along at least one pair of sides, facing each other, of a periphery of the second main surface of the silicon carbide substrate. The cross-section of the notch orthogonal to a side of the second main surface has a corner. In the cross-section, a thickness of the silicon carbide substrate at an edge thereof under which the notch is formed is smaller than a thickness of the silicon carbide substrate in a region under which the notch is not formed, and larger than a thickness of the silicon carbide substrate in a region under which a bottom of the corner is formed.

摘要翻译： 欧姆电极层设置在碳化硅衬底的第二主表面上，金属电极层设置在欧姆电极层上。 沿着碳化硅衬底的第二主表面的周边的彼此面对的至少一对侧形成凹口。 与第二主表面的正交的切口的横截面具有拐角。 在横截面中，形成凹口的边缘处的碳化硅衬底的厚度小于在未形成缺口的区域中的碳化硅衬底的厚度，并且大于厚度 在形成角部的底部的区域内的碳化硅衬底。

公开(公告)号：US09324631B2

公开(公告)日：2016-04-26

申请号：US13870411

申请日：2013-04-25

申请人： GLOBALFOUNDRIES Inc.

发明人： Axel Walter ,  Matthias Lehr

IPC分类号： H01L23/58 ,  H01L23/48 ,  H01L23/528 ,  H01L23/532 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/552

CPC分类号： H01L23/481 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/3677 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/552 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05541 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/06133 ,  H01L2224/1148 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： A bump structure or pillar structure formed above a metallization system of a complex semiconductor device may include a stress buffer layer, which may efficiently distribute the resulting mechanical stress which may typically occur during the chip package interaction due to a thermal mismatch of these components. The stress buffer layer comprises copper-based buffer regions that cover a significant portion of the overall surface, wherein a thickness of approximately 3-10 μm may also be used. Moreover, the buffer regions may efficiently replace aluminum as a terminal metal active region.

摘要翻译： 形成在复合半导体器件的金属化系统之上的凸起结构或柱结构可以包括应力缓冲层，其可以有效地分布由于这些部件的热失配而在芯片封装相互作用期间通常发生的所得到的机械应力。 应力缓冲层包括覆盖整个表面的重要部分的铜基缓冲区，其中也可以使用约3-10μm的厚度。 此外，缓冲区域可以有效地代替铝作为末端金属活性区域。

公开(公告)号：US20160071813A1

公开(公告)日：2016-03-10

申请号：US14935669

申请日：2015-11-09

申请人： STATS ChipPAC, Ltd.

发明人： Rajendra D. Pendse

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49838 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10175 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/48 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a semiconductor die with a die bump pad and substrate with a trace line and integrated bump pad. Conductive bump material is deposited on the substrate bump pad or die bump pad. The semiconductor die is mounted over the substrate so that the bump material is disposed between the die bump pad and substrate bump pad. The bump material is reflowed without a solder mask around the die bump pad or substrate bump pad to form an interconnect. The bump material is self-confined within a footprint of the die bump pad or substrate bump pad. The bump material can be immersed in a flux solution prior to reflow to increase wettability. Alternatively, the interconnect includes a non-fusible base and fusible cap. The volume of bump material is selected so that a surface tension maintains self-confinement of the bump material within the bump pads during reflow.

摘要翻译： 半导体器件具有具有管芯凸块焊盘的半导体管芯和具有轨迹线和集成凸块焊盘的衬底。 导电凸块材料沉积在衬底凸块焊盘或模具凸块焊盘上。 半导体管芯安装在衬底上，使得凸块材料设置在管芯凸块焊盘和衬底凸块焊盘之间。 凸块材料在芯片凸块焊盘或基板凸块焊盘周围没有焊接掩模回流以形成互连。 凸块材料在管芯凸块焊盘或衬底凸块焊盘的占用面积内自我限制。 在回流之前，凸起材料可以浸入助熔剂溶液中以增加润湿性。 或者，互连包括不可熔基底和可熔盖。 选择凸起材料的体积，使得表面张力在回流期间保持凸块内的凸起材料的自我约束。

公开(公告)号：US20160071812A1

公开(公告)日：2016-03-10

申请号：US14942756

申请日：2015-11-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Feng Chen ,  Yen-Liang Lin ,  Tin-Hao Kuo ,  Sheng-Yu Wu ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L23/31

CPC分类号： H01L23/562 ,  H01L21/768 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/485 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0231 ,  H01L2224/0237 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13171 ,  H01L2224/13172 ,  H01L2224/13184 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/381 ,  H01L2924/207 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/05552 ,  H01L2924/00

摘要： A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 μm. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.

摘要翻译： 提供一种用于防止钝化层中的裂纹的系统和方法。 在一个实施例中，接触垫具有第一直径，并且穿过钝化层的开口具有第二直径，其中第一直径大于第二直径大约10μm的第一距离。 在另一个实施例中，通过该开口形成底部凹凸金属化，并且下凸块金属化具有大于第一直径的第三直径约5微米的第二距离。 在另一个实施例中，第一距离和第二距离之和大于约15μm。 在另一个实施例中，下凸点金属化具有小于接触焊盘的尺寸的第一尺寸和大于接触焊盘尺寸的第二尺寸。

公开(公告)号：US20160056072A1

公开(公告)日：2016-02-25

申请号：US14467191

申请日：2014-08-25

申请人： GLOBALFOUNDRIES, Inc.

发明人： Charles L. Arvin ,  Harry D. Cox ,  Eric D. Perfecto ,  Thomas A. Wassick

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L21/6835 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76841 ,  H01L23/53228 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03849 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/10145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1316 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/13164 ,  H01L2924/01026 ,  H01L2924/206 ,  H01L2924/01047

摘要： A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.

摘要翻译： 三维多管芯封装包括第一管芯和第二管芯。 第一个模具包括一个连接到焊料的触点。 通过将处理器粘合地附接到第二管芯的顶侧并使第二管芯的底侧变薄来减小第二管芯。 第二模具包括抑制粘合剂转移的层状冶金的多层接触。 层状冶金包括至少一层可润湿的焊料。 多层接触可以包括镍层，镍层上的铜层和铜层上的镍 - 铁层。 多层接触还可以包括镍层，镍层上的铜 - 锡层和在铜 - 锡层上的锡层。

公开(公告)号：US20160027742A1

公开(公告)日：2016-01-28

申请号：US14732086

申请日：2015-06-05

申请人： uPI semiconductor corp.

发明人： Chau-Chun Wen ,  Hsing-Wu Li

IPC分类号： H01L23/00

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/492 ,  H01L23/585 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2021/6027 ,  H01L2224/0401 ,  H01L2224/05014 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/06155 ,  H01L2224/08113 ,  H01L2224/13023 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/14155 ,  H01L2224/16227 ,  H01L2224/32104 ,  H01L2224/32221 ,  H01L2224/81193 ,  H01L2924/00014 ,  H01L2924/014

摘要： A portable apparatus, an IC packaging structure, an IC packaging object, and an IC packaging method thereof are disclosed. The IC packaging structure includes an IC packaging object and a substrate. The packaging object includes a die and a metallurgy layer. The die has a contact portion, a saw reserved portion, and a seal ring. The seal ring is disposed between the contact portion and the saw reserved portion. The metallurgy layer is disposed on the contact portion. At least a part of the metallurgy layer overlaps the seal ring. The metallurgy layer includes a solderable layer coated by a solder paste. The substrate includes a solder pad. The solder pad is coupled to the solderable layer coated by the solder paste.

摘要翻译： 公开了便携式设备，IC封装结构，IC封装物体及其IC封装方法。 IC封装结构包括IC封装体和基板。 包装对象包括模具和冶金层。 模具具有接触部分，锯片预留部分和密封环。 密封环设置在接触部分和锯保留部分之间。 冶金层设置在接触部分上。 冶金层的至少一部分与密封圈重叠。 冶金层包括用焊膏涂覆的可焊层。 衬底包括焊盘。 焊料焊盘与由焊膏涂覆的可焊层相连。