公开(公告)号：US20140021605A1

公开(公告)日：2014-01-23

申请号：US13552375

申请日：2012-07-18

申请人： Chen-Hua Yu ,  Yung Ching Chen ,  Chien-Hsun Lee ,  Jiun Yi Wu ,  Mirng-Ji Lii ,  Ming-Da Cheng

发明人： Chen-Hua Yu ,  Yung Ching Chen ,  Chien-Hsun Lee ,  Jiun Yi Wu ,  Mirng-Ji Lii ,  Ming-Da Cheng

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/68778 ,  H01L23/3142 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/73 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/26175 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/92125 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2924/014

摘要： Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal stud bumps are disposed between the first packaged die and the second packaged die. The metal stud bumps include a stick region, a first ball region coupled to a first end of the stick region, and a second ball region coupled to a second end of the stick region. The metal stud bumps include a portion that is partially embedded in a solder joint.

摘要翻译： 封装封装（PoP）器件和封装半导体管芯的方法被公开。 PoP器件包括第一封装管芯和耦合到第一封装管芯的第二封装管芯。 在第一封装模具和第二封装模具之间设置金属凸块凸块。 金属柱凸块包括一个棒状区域，一个耦合到该棒状区域的第一端的第一球形区域和一个耦合到该棒状区域的第二端的第二球形区域。 金属柱凸块包括部分嵌入焊点中的部分。

公开(公告)号：US08540136B1

公开(公告)日：2013-09-24

申请号：US13605403

申请日：2012-09-06

申请人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： B23K31/02 ,  B23K37/00

CPC分类号： B23K31/02 ,  B21D53/36 ,  B23K20/007 ,  H01L2224/78301 ,  Y10T29/49

摘要： Methods for forming stud bumps and apparatuses for forming stud bumps are disclosed. According to an embodiment, a method includes clamping a wire with a clamp. The clamp includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method further includes bonding the wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface. The second notch is the notch pitch distance from the first notch along the wire.

摘要翻译： 公开了用于形成柱形凸块的方法和用于形成凸块凸块的装置。 根据实施例，一种方法包括用夹具夹紧线。 所述夹具包括至少两个相对的板，并且当所述线被夹紧形成所述线中的第一凹口时，所述相对板中的至少一个包括与所述线相交的突出特征。 该方法还包括将线接合到接合表面，将线从夹具中释放出来，使线穿过钳口的间距距离通过夹具夹紧线，夹具在线中形成第二凹口，并将线断开， 接合表面上的导线的接合部分。 第二个凹口是距离第一个凹口沿导线的切口间距距离。

公开(公告)号：US20130228932A1

公开(公告)日：2013-09-05

申请号：US13409756

申请日：2012-03-01

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Kai-Chiang Wu

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L24/14 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/11011 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/0206 ,  H05K1/0306 ,  H05K1/113 ,  H05K2201/068 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A package on packaging structure comprising a first package and a second package provides for improved thermal conduction and mechanical strength by the introduction of a thermally conductive substrate attached to the second package. The first package has a first substrate and a first integrated circuit. The second package has a second substrate containing through vias that has a first coefficient of thermal expansion. The second package also has a second integrated circuit having a second coefficient of thermal expansion located on the second substrate. The second coefficient of thermal expansion deviates from the first coefficient of thermal expansion by less than about 10 or less than about 5 parts-per-million per degree Celsius. A first set of conductive elements couples the first substrate and the second substrate. A second set of conductive elements couples the second substrate and the second integrated circuit.

公开(公告)号：US08524595B2

公开(公告)日：2013-09-03

申请号：US12614727

申请日：2009-11-09

申请人： Mirng-Ji Lii ,  Hsin-Hui Lee

发明人： Mirng-Ji Lii ,  Hsin-Hui Lee

IPC分类号： H01L21/60

CPC分类号： H01L23/3192 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/274 ,  H01L2224/81191 ,  H01L2224/81211 ,  H01L2224/81801 ,  H01L2224/8192 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013

摘要： A semiconductor structure includes a plurality of solder structures between a first substrate and a second substrate. A first encapsulation material is substantially around a first one of the solder structures and a second encapsulation material is substantially around a second one of the solder structures. The first one and the second one of the solder structures are near to each other and a gap is between the first encapsulation material and the second encapsulation material.

摘要翻译： 半导体结构包括在第一基板和第二基板之间的多个焊料结构。 第一封装材料基本上围绕第一种焊料结构，第二封装材料基本上围绕第二种焊料结构。 第一个和第二个焊料结构彼此靠近，第一封装材料和第二封装材料之间有一个间隙。

公开(公告)号：US20130009307A1

公开(公告)日：2013-01-10

申请号：US13179299

申请日：2011-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Yi-Wen Wu ,  Hsiu-Jen Lin ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L21/566 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/525 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/03903 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed.

摘要翻译： 一种方法包括在覆盖在半导体衬底上的金属焊盘上形成钝化层。 在钝化层中形成第一开口，金属垫的一部分通过第一开口暴露。 种子层形成在钝化层之上并且电耦合到金属焊盘。 种子层还包括钝化层上的部分。 在种子层上形成第一掩模，其中第一掩模具有直接在金属焊盘的至少一部分上的第二开口。 在种子层和第二开口中形成PPI。 在第一掩模上形成第二掩模，第二掩模形成在第二掩模中。 金属凸块的一部分形成在第三开口中。 在形成金属凸块的部分的步骤之后，去除第一和第二掩模。

公开(公告)号：US20100055846A1

公开(公告)日：2010-03-04

申请号：US12614727

申请日：2009-11-09

申请人： Mirng-Ji Lii ,  Hsin-Hui Lee

发明人： Mirng-Ji Lii ,  Hsin-Hui Lee

IPC分类号： H01L21/56 ,  H01L21/60

CPC分类号： H01L23/3192 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/274 ,  H01L2224/81191 ,  H01L2224/81211 ,  H01L2224/81801 ,  H01L2224/8192 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013

摘要： A semiconductor structure includes a plurality of solder structures between a first substrate and a second substrate. A first encapsulation material is substantially around a first one of the solder structures and a second encapsulation material is substantially around a second one of the solder structures. The first one and the second one of the solder structures are near to each other and a gap is between the first encapsulation material and the second encapsulation material.

摘要翻译： 半导体结构包括在第一基板和第二基板之间的多个焊料结构。 第一封装材料基本上围绕第一种焊料结构，第二封装材料基本上围绕第二种焊料结构。 第一个和第二个焊料结构彼此靠近，第一封装材料和第二封装材料之间有一个间隙。

公开(公告)号：US20080197461A1

公开(公告)日：2008-08-21

申请号：US11706193

申请日：2007-02-15

申请人： Chen-Hua Yu ,  Hui-Lin Chang ,  Yung-Cheng Lu ,  Mirng-Ji Lii ,  Yung-Ching Chen

发明人： Chen-Hua Yu ,  Hui-Lin Chang ,  Yung-Cheng Lu ,  Mirng-Ji Lii ,  Yung-Ching Chen

IPC分类号： H01L21/60 ,  B23K37/00 ,  H01L23/495

CPC分类号： H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05554 ,  H01L2224/45012 ,  H01L2224/45013 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4516 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49175 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/20751 ,  H01L2924/00 ,  H01L2924/01006 ,  H01L2224/85399 ,  H01L2224/05599

摘要： An apparatus for wire bonding and a capillary tool thereof are provided. An exemplary embodiment of a capillary tool capable of a wire bonding comprises a body having a first internal channel of a first diameter for accommodating a flow of a conductive wire. A compressible head is connected to the body, having a second internal channel of a second diameter for accommodating the flow of the conductive wire, wherein the first diameter is fixed and the second diameter is variable, the second diameter is not more than the first diameter and a diameter the conductive wire flowed through the compressible head is adjustable. An integrated circuit (IC) package is also provided.

摘要翻译： 提供一种用于引线接合的装置及其毛细管工具。 能够引线接合的毛细管工具的示例性实施例包括具有用于容纳导线流动的第一直径的第一内部通道的主体。 可压缩头连接到主体，具有用于容纳导线流动的第二直径的第二内部通道，其中第一直径是固定的，第二直径是可变的，第二直径不大于第一直径 并且流过可压缩头的导线的直径是可调节的。 还提供集成电路（IC）封装。

公开(公告)号：US07116002B2

公开(公告)日：2006-10-03

申请号：US10881605

申请日：2004-06-30

申请人： Te-Tsung Chao ,  Mirng-Ji Lii ,  Chung-Yi Lin ,  Abel Chang

发明人： Te-Tsung Chao ,  Mirng-Ji Lii ,  Chung-Yi Lin ,  Abel Chang

IPC分类号： H01L23/29 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L25/0657 ,  H01L24/73 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/29388 ,  H01L2224/2939 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2225/06593 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/0102 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A stacked, multi-die semiconductor device and method of forming thereof. A preferred embodiment comprises disposing a stack of semiconductor dies to a substrate. The stacking arrangement is such that a lateral periphery of an upper die is cantilevered over a lower die thereby forming a recess. A supporting adhesive layer containing a filler is disposed upon the substrate about the lateral periphery of the lower die and substantially filling the recess. In one preferred embodiment, the filler comprises microspheres. In another preferred embodiment, the filler comprises a dummy die, an active die, or a passive die.

公开(公告)号：US08912651B2

公开(公告)日：2014-12-16

申请号：US13397747

申请日：2012-02-16

申请人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

IPC分类号： H01L23/498

CPC分类号： H01L25/0657 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05693 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16503 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48693 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48793 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48893 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81026 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/01006

摘要： Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

摘要翻译： 实施例涉及包装封装（PoP）结构，包括柱状灯泡和形成PoP结构的方法。 根据实施例，结构包括第一基板，螺柱灯泡，模具，第二基板和电连接器。 螺柱灯泡耦合到第一基板的第一表面。 模具附接到第一基板的第一表面。 电连接器耦合到第二基板，并且相应的电连接器耦合到相应的螺柱灯泡。

公开(公告)号：US08796132B2

公开(公告)日：2014-08-05

申请号：US13539188

申请日：2012-06-29

申请人： Ming-Chung Sung ,  Yung Ching Chen ,  Chien-Hsun Lee ,  Chen-Hua Yu ,  Mirng-Ji Lii

发明人： Ming-Chung Sung ,  Yung Ching Chen ,  Chien-Hsun Lee ,  Chen-Hua Yu ,  Mirng-Ji Lii

IPC分类号： H01L21/60 ,  H01L21/48

CPC分类号： H01L21/4825 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/742 ,  H01L24/78 ,  H01L2224/1134 ,  H01L2224/45144 ,  H01L2224/742 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed herein is a system and method for mounting semiconductor packages by forming one or more interconnects, optionally, with a wirebonder, and mounting the interconnects to a mounting pad on a target package. Mounting the interconnect may comprise ultrasonically welding the interconnects to the mounting pads, and the interconnect may be mounted via a mounting node on the end of the interconnect, wherein the mounting node may be formed by an electric flame off process. The interconnects may be trimmed to one or more substantially uniform heights, optionally using a laser or contact-type trimming system, and the tails of the interconnects may be supported during trimming. A top package may be bonded on the trimmed ends of the interconnects. During mounting, a support plate may be used to support the package, and a mask maybe used during interconnect mounting.

摘要翻译： 本文公开了一种用于通过形成一个或多个互连件，可选地用引线键合器安装半导体封装以及将互连件安装到目标封装上的安装焊盘来安装半导体封装件的系统和方法。 安装互连可以包括将互连件超声波焊接到安装焊盘，并且互连可以经由互连端部上的安装节点来安装，其中安装节点可以由电火焰熄灭工艺形成。 互连可以被修剪到一个或多个基本均匀的高度，可选地使用激光或接触式修剪系统，并且在修剪期间可以支撑互连的尾部。 顶部封装可以结合在互连件的修剪端上。 在安装期间，可以使用支撑板来支撑封装，并且在互连安装期间可以使用掩模。