公开(公告)号：US08293577B2

公开(公告)日：2012-10-23

申请号：US12923590

申请日：2010-09-29

申请人： Yuji Awano ,  Masataka Mizukoshi

发明人： Yuji Awano ,  Masataka Mizukoshi

IPC分类号： H01L21/44

CPC分类号： H05K3/325 ,  B82Y10/00 ,  H01L24/12 ,  H01L24/16 ,  H01L24/90 ,  H01L2224/1134 ,  H01L2224/13193 ,  H01L2224/13582 ,  H01L2224/13693 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/81899 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K2201/026 ,  H05K2201/09472 ,  H05K2201/209 ,  H01L2224/13099 ,  H01L2224/0401

摘要： A semiconductor package is disclosed that includes a semiconductor device; a circuit board; and a connection mechanism including a first conductive terminal provided on the semiconductor device, and a second conductive terminal provided on the circuit board side, the connection mechanism electrically connecting the semiconductor device and the circuit board via the first conductive terminal and the second conductive terminal. At least one of the first conductive terminal and the second conductive terminal of the connection mechanism includes one or more carbon nanotubes each having one end thereof fixed to the surface of the at least one of the first conductive terminal and the second conductive terminal, and extending in a direction away from the surface. The first conductive terminal and the second conductive terminal engage each other through the carbon nanotubes.

摘要翻译： 公开了一种包括半导体器件的半导体封装; 电路板; 以及连接机构，其包括设置在所述半导体器件上的第一导电端子和设置在所述电路板侧的第二导电端子，所述连接机构经由所述第一导电端子和所述第二导电端子电连接所述半导体器件和所述电路板。 连接机构的第一导电端子和第二导电端子中的至少一个包括一个或多个碳纳米管，每个碳纳米管的一端固定到第一导电端子和第二导电端子中的至少一个的表面，并且延伸 在远离表面的方向上。 第一导电端子和第二导电端子通过碳纳米管彼此接合。

公开(公告)号：US20120263946A1

公开(公告)日：2012-10-18

申请号：US13509362

申请日：2010-11-10

申请人： Kazuyuki Mitsukura ,  Takashi Kawamori ,  Takashi Masuko ,  Shigeki Katogi ,  Shinjiro Fujii

发明人： Kazuyuki Mitsukura ,  Takashi Kawamori ,  Takashi Masuko ,  Shigeki Katogi ,  Shinjiro Fujii

IPC分类号： B32B7/12 ,  C09J7/02 ,  H01L21/50

CPC分类号： H01L24/27 ,  C08F220/30 ,  H01L21/565 ,  H01L21/67132 ,  H01L21/6836 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/27002 ,  H01L2224/274 ,  H01L2224/27416 ,  H01L2224/27418 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/92247 ,  H01L2224/93 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T428/2809 ,  Y10T428/31935 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/27 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed is a method for manufacturing a semiconductor device which includes the steps of: forming an adhesive layer by forming an adhesive composition into a film on a surface opposite to the circuit surface of a semiconductor wafer; bringing the adhesive layer to a B-stage by irradiation with light; cutting the semiconductor wafer together with the adhesive layer brought to the B-stage into a plurality of semiconductor chips; and making the semiconductor chip to adhere to a supporting member or another semiconductor chip by performing compression bonding, with the adhesive layer sandwiched therebetween.

摘要翻译： 本发明公开了一种半导体器件的制造方法，包括以下步骤：通过在与半导体晶片的电路表面相对的表面上形成粘合剂组合物形成粘合剂层; 通过光照射使粘合剂层进入B阶段; 将半导体晶片与带到B级的粘合剂层一起切割成多个半导体芯片; 并且通过进行压接而使半导体芯片粘附到支撑构件或另一半导体芯片上，其中夹着粘合剂层。

公开(公告)号：US20120261801A1

公开(公告)日：2012-10-18

申请号：US13448992

申请日：2012-04-17

申请人： Akihito TAKANO ,  Masahiro SUNOHARA ,  Hideaki SAKAGUCHI ,  Mitsutoshi HIGASHI ,  Kenichi OTA ,  Yuichi SASAJIMA

发明人： Akihito TAKANO ,  Masahiro SUNOHARA ,  Hideaki SAKAGUCHI ,  Mitsutoshi HIGASHI ,  Kenichi OTA ,  Yuichi SASAJIMA

IPC分类号： H01L23/48 ,  C25D5/02 ,  C25D7/00 ,  H05K1/00 ,  H05K3/46

CPC分类号： C25D17/001 ,  C25D1/003 ,  C25D5/02 ,  C25D7/123 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1531 ,  H01L2924/157 ,  H05K1/0306 ,  H05K1/162 ,  H05K2201/09581 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/81805

摘要： A wiring board includes a silicon substrate with a through hole communicating with first and second substrate surfaces. A capacitor includes a capacitor part mounted on an insulating film covering the substrate first surface and including a first electrode on the insulating film, a first dielectric layer on the first electrode, and a second electrode on the first dielectric layer. A multilayer structure arranged on a wall surface defining the through hole includes the insulating film on the through hole wall surface, a first metal layer on the insulating film formed from the same material as the first electrode, a second dielectric layer on the first metal layer formed from the same material as the first dielectric layer, and a second metal layer on the second dielectric layer formed from the same material as the second electrode. The multilayer structure covers a penetration electrode in the through hole.

摘要翻译： 布线板包括具有与第一和第二基板表面连通的通孔的硅基板。 电容器包括安装在覆盖基板第一表面的绝缘膜上并包括绝缘膜上的第一电极，第一电极上的第一电介质层和第一电介质层上的第二电极的电容器部分。 布置在限定通孔的壁表面上的多层结构包括在通孔壁表面上的绝缘膜，由与第一电极相同的材料形成的绝缘膜上的第一金属层，第一金属层上的第二介电层 由与第一电介质层相同的材料形成，以及由与第二电极相同的材料形成的第二介电层上的第二金属层。 多层结构覆盖通孔中的穿透电极。

公开(公告)号：US20120178251A1

公开(公告)日：2012-07-12

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi LIM ,  Yi-Wen WU ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Tzong-Huann YANG ,  Hsiu-Jen LIN ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Zheng-Yi LIM ,  Yi-Wen WU ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Tzong-Huann YANG ,  Hsiu-Jen LIN ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在衬底上延伸的钝化层，该钝化层在接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US08207616B2

公开(公告)日：2012-06-26

申请号：US12738560

申请日：2008-10-24

申请人： Jong Wan Hong ,  Jang Soon Kim ,  Hyo Soon Park ,  Hyun Jee Yoo ,  Dong Han Kho ,  Hyo Sook Joo

发明人： Jong Wan Hong ,  Jang Soon Kim ,  Hyo Soon Park ,  Hyun Jee Yoo ,  Dong Han Kho ,  Hyo Sook Joo

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L24/29 ,  C08L33/068 ,  C08L2666/04 ,  C09J7/35 ,  C09J133/02 ,  C09J133/14 ,  C09J163/00 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/83885 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  Y10T428/25 ,  Y10T428/269 ,  Y10T428/2874 ,  Y10T428/31515 ,  H01L2924/00

摘要： The present invention relates to an adhesive film, a dicing die bonding film and a semiconductor device. More specifically, the adhesive film of the present invention is characterized by comprising a base film and an adhesive layer and having a yield strength of 20 to 50 gf and a slope of tensile elastic region of 30 to 80 gf/mm at a thickness of 5 to 50 μm. In the present adhesive film, the yield strength and the slope of tensile elastic region are controlled so that the incidence of burrs may be predicted and controlled depending on thickness of an adhesive layer. The dicing die bonding film, and the semiconductor device comprising the same have lower incidence of burrs and an excellent workability and reliability.

摘要翻译： 粘合膜技术领域本发明涉及一种粘合膜，切割芯片接合膜和半导体器件。 更具体地说，本发明的粘合膜的特征在于，包括基膜和粘合剂层，其屈服强度为20〜50gf，拉伸弹性区域的斜率为30〜80gf / mm，厚度为5 至50μm。 在本粘合膜中，控制屈服强度和拉伸弹性区域的斜率，使得可以根据粘合剂层的厚度来预测和控制毛刺的发生。 切割芯片接合薄膜及其半导体装置具有较低的毛刺发生率和良好的可加工性和可靠性。

公开(公告)号：US20120126399A1

公开(公告)日：2012-05-24

申请号：US13197163

申请日：2011-08-03

申请人： Charles W. C. LIN ,  Chia-Chung WANG

发明人： Charles W. C. LIN ,  Chia-Chung WANG

IPC分类号： H01L23/498

CPC分类号： H01L23/3121 ,  H01L21/56 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/221 ,  H01L2224/24101 ,  H01L2224/24221 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/73267 ,  H01L2224/82106 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/92244 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0207 ,  H05K1/186 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor assembly includes a semiconductor device, a heat spreader, an adhesive and a build-up circuitry. The heat spreader includes a bump, a base and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the build-up circuitry and thermally connected to the bump. The bump extends from the base into an opening in the adhesive, the base extends vertically from the bump opposite the cavity and the flange extends laterally from the bump at the cavity entrance. The build-up circuitry includes a dielectric layer and conductive traces on the semiconductor device and the flange. The conductive traces provide signal routing for the semiconductor device.

摘要翻译： 半导体组件包括半导体器件，散热器，粘合剂和积聚电路。 散热器包括凸块，底座和凸缘。 凸块限定一个空腔。 半导体器件安装在空腔处的凸块上，电连接到积聚电路并热连接到凸块。 凸起从基部延伸到粘合剂中的开口中，基部从与腔相对的凸起垂直延伸，并且凸缘从腔入口处的凸起横向延伸。 积聚电路包括介电层和半导体器件上的导电迹线和凸缘。 导电迹线为半导体器件提供信号路由。

公开(公告)号：US20120126388A1

公开(公告)日：2012-05-24

申请号：US13287374

申请日：2011-11-02

申请人： Charles W. C. LIN ,  Chia-Chung Wang

发明人： Charles W. C. LIN ,  Chia-Chung Wang

IPC分类号： H01L23/34

CPC分类号： H01L23/3121 ,  H01L21/56 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/221 ,  H01L2224/24101 ,  H01L2224/24221 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/73267 ,  H01L2224/82106 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/92244 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0207 ,  H05K1/186 ,  H01L2224/13099 ,  H01L2924/00

摘要： A stackable semiconductor assembly includes a semiconductor device, a heat spreader, an adhesive, a plated through-hole, first build-up circuitry and second build-up circuitry. The heat spreader includes a bump and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the first build-up circuitry and thermally connected to the bump. The bump extends into an opening in the adhesive and the flange extends laterally from the bump at the cavity entrance. The first build-up circuitry and the second build-up circuitry extend beyond the semiconductor device in opposite vertical directions. The plated through-hole extends through the adhesive and provides signal routing between the first build-up circuitry and the second build-up circuitry. The heat spreader provides heat dissipation for the semiconductor device.

摘要翻译： 可堆叠半导体组件包括半导体器件，散热器，粘合剂，电镀通孔，第一堆积电路和第二堆积电路。 散热器包括凸块和凸缘。 凸块限定一个空腔。 半导体器件安装在空腔处的凸块上，电连接到第一积聚电路并热连接到凸块。 凸块延伸到粘合剂中的开口中，并且凸缘从空腔入口处的凸起横向延伸。 第一积聚电路和第二堆积电路在相反的垂直方向上延伸超出半导体器件。 电镀通孔延伸穿过粘合剂并且在第一聚集电路和第二聚集电路之间提供信号路由。 散热器为半导体器件提供散热。

公开(公告)号：US20120126379A1

公开(公告)日：2012-05-24

申请号：US13298613

申请日：2011-11-17

申请人： Daisuke UENDA ,  Takeshi MATSUMURA ,  Koichi INOUE ,  Miki MORITA

发明人： Daisuke UENDA ,  Takeshi MATSUMURA ,  Koichi INOUE ,  Miki MORITA

IPC分类号： H01L23/552 ,  B32B37/14 ,  B32B37/12 ,  C23C16/44 ,  B32B7/12 ,  C09J7/02

CPC分类号： H01L24/27 ,  C09J7/28 ,  C09J2203/326 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/29 ,  H01L2224/29083 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83091 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/85097 ,  H01L2224/85205 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06568 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01063 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T156/10 ,  Y10T428/2804 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/0532 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor device having an electromagnetic wave shielding layer can be manufactured without decreasing productivity. The present invention provides a die bond film including an adhesive layer and an electromagnetic wave shielding layer made of a metal foil or a die bond film including an adhesive layer and an electromagnetic wave shielding layer formed by vapor deposition.

摘要翻译： 可以在不降低生产率的情况下制造具有电磁波屏蔽层的半导体器件。 本发明提供一种芯片接合膜，其包括粘合层和由金属箔制成的电磁波屏蔽层或包括粘合层的芯片接合膜和通过气相沉积形成的电磁波屏蔽层。

公开(公告)号：US20120104613A1

公开(公告)日：2012-05-03

申请号：US13349155

申请日：2012-01-12

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

IPC分类号： H01L23/532

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.

摘要翻译： 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。

公开(公告)号：US20120098090A1

公开(公告)日：2012-04-26

申请号：US13069789

申请日：2011-03-23

申请人： Francois Hebert ,  Shea Petricek ,  Nikhil Kelkar

发明人： Francois Hebert ,  Shea Petricek ,  Nikhil Kelkar

IPC分类号： H01L29/92 ,  H01L21/56

CPC分类号： H01L23/49589 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/16 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/16265 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3718 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48265 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power converter device comprises a substrate, a power die mounted on the substrate, and a capacitor die mounted over the power die in a stacked configuration. The capacitor die is electrically coupled to the power die. A packaging material encapsulates the power die and the capacitor die. An integrated circuit die can also be mounted to the substrate and electrically coupled to the power die to receive power signals from the power die, with the packaging material also encapsulating the integrated circuit die.

摘要翻译： 功率转换器装置包括衬底，安装在衬底上的功率管芯和以堆叠构造安装在功率管芯上的电容器管芯。 电容器管芯电耦合到功率管芯。 封装材料封装了电源管芯和电容器管芯。 集成电路管芯也可以安装到衬底上并且电耦合到功率管芯以从功率管芯接收功率信号，封装材料也封装集成电路管芯。