公开(公告)号：WO2015175554A2

公开(公告)日：2015-11-19

申请号：PCT/US2015/030410

申请日：2015-05-12

Applicant: INVENSAS CORPORATION

Inventor： KATKAR, Rajesh ,  UZOH, Cyprian, Emeka

IPC: H01L21/60

CPC classification number: H01L24/14 ,  B23K1/0016 ,  B23K3/0623 ,  B23K35/0244 ,  B23K35/0266 ,  B23K2201/40 ,  H01L21/02225 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/0391 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/051 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1405 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75253 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K1/115 ,  H05K1/144 ,  H05K3/341 ,  H05K2201/09572 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2224/81 ,  H01L2224/83

Abstract: In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion of a solder ball's surface is melted when the connection is formed on one structure and/or when the connection is being attached to another structure. In some embodiments, non-solder balls are joined by an intermediate solder ball (140i). A solder connection may be surrounded by a solder locking layer (1210) and may be recessed in a hole (1230) in that layer. Other features are also provided.

Abstract translation: 在一些实施例中，为了增加将不同结构与一个或多个焊球连接的焊料连接的高度与间距比，当在一个结构上形成连接时，和/或当 连接正在附加到另一个结构。 在一些实施例中，非焊球通过中间焊球（140i）连接。 焊料连接可以被焊料锁定层（1210）包围，并且可以凹入该层中的孔（1230）中。 还提供其他功能。

公开(公告)号：WO2015039043A3

公开(公告)日：2015-05-07

申请号：PCT/US2014055695

申请日：2014-09-15

Applicant: INVENSAS CORP

Inventor： HABA BELGACEM ,  CRISP RICHARD DEWITT ,  ZOHNI WAEL

IPC: H01L23/485 ,  H01L21/60 ,  H01L23/29 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L25/0657 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/49 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/745 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/1184 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13624 ,  H01L2224/13655 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16105 ,  H01L2224/16108 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/742 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/92142 ,  H01L2224/92143 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/00

Abstract: A microelectronic structure includes a semiconductor having conductive elements at a first surface. Wire bonds have bases joined to the conductive elements and free ends remote from the bases, the free ends being remote from the substrate and the bases and including end surfaces. The wire bonds define edge surfaces between the bases and end surfaces thereof. A compliant material layer extends along the edge surfaces within first portions of the wire bonds at least adjacent the bases thereof and fills spaces between the first portions of the wire bonds such that the first portions of the wire bonds are separated from one another by the compliant material layer. Second portions of the wire bonds are defined by the end surfaces and portions of the edge surfaces adjacent the end surfaces that are extend from a third surface of the compliant later.

Abstract translation: 微电子结构包括在第一表面具有导电元件的半导体。 线接合件具有连接到导电元件和远离基座的自由端的基部，自由端远离基板和基部并且包括端面。 线接合限定其基端和端面之间的边缘表面。 顺应性材料层沿着线的第一部分中的边缘表面延伸至少邻近其底部，并且填充引线接合的第一部分之间的空间，使得引线接合的第一部分通过顺应性彼此分离 材料层。 引线接合的第二部分由邻近端面的端面和端部表面的部分限定，其从较柔性的第三表面延伸。

公开(公告)号：WO2011074589A1

公开(公告)日：2011-06-23

申请号：PCT/JP2010/072506

申请日：2010-12-14

Applicant: 三菱瓦斯化学株式会社 ,  細見 彰良 ,  大前 健祐

Inventor： 細見　彰良 ,  大前　健祐

IPC: H01L21/308 ,  C23F1/18 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52

CPC classification number: H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/44 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/01022 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: 　電極を有する半導体基板の再配線に用いられ、ニッケルをエッチングせずに銅を選択的にエッチングできるエッチング液及びこれを用いた半導体装置の製造方法を提供する。　過酸化水素とクエン酸とを含み、過酸化水素の含有量が０．７５～１２質量％、クエン酸の含有量が１～２０質量％、かつ過酸化水素とクエン酸とのモル比が０．３～５の範囲内である半導体基板の再配線に用いられるエッチング液、過酸化水素とリンゴ酸とを含み、過酸化水素の含有量が０．７５～１２質量％、リンゴ酸の含有量が１．５～２５質量％、かつ過酸化水素とリンゴ酸とのモル比が０．２～６の範囲内である半導体基板の再配線に用いられる、銅の選択的エッチング用エッチング液、及びこれらのエッチング液を用いた半導体装置の製造方法である。

Abstract translation: 公开了：用于重新布线具有电极的半导体衬底的蚀刻剂，并且能够在不蚀刻镍的情况下选择性地蚀刻铜; 以及使用蚀刻剂制造半导体器件的方法。 具体公开的是：用于重新布线半导体衬底并含有过氧化氢和柠檬酸的蚀刻剂，其中过氧化氢含量为0.75-12质量％，柠檬酸含量为1-20质量％， 过氧化氢与柠檬酸的摩尔比在0.3-5的范围内; 用于铜的选择性蚀刻的蚀刻剂，其用于半导体衬底的重新布线并含有过氧化氢和苹果酸，并且其中过氧化氢含量为0.75-12质量％，苹果酸含量为1.5〜25质量％ 过氧化氢与苹果酸的摩尔比在0.2-6的范围内; 以及使用该蚀刻剂制造半导体器件的方法。

公开(公告)号：WO1998025297A1

公开(公告)日：1998-06-11

申请号：PCT/JP1997004437

申请日：1997-12-04

Applicant: SEIKO EPSON CORPORATION ,  HASHIMOTO, Nobuaki

Inventor： SEIKO EPSON CORPORATION

IPC: H01L21/3205

CPC classification number: H01L24/16 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/36 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/14131 ,  H01L2224/16 ,  H01L2224/73104 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00

Abstract: A semiconductor device whose package size is nearly the same as the size of a chip, which has a stress absorbing layer, which does not require a flexible substrate, and which can be manufactured in a large number at the same time. A method for manufacturing a semiconductor device includes a process wherein electrodes (12) are formed on a wafer (10), a process wherein a resin layer (14) is formed as a stress reducing layer on the wafer (10) except for the parts where the electrodes (12) are formed, a process wherein a chrome layer (16) is formed as an interconnect on the whole surface of the wafer (10) including the electrodes (12) and the resin layer (14), a process wherein solder balls are formed as external electrodes on parts of the chrome layer (16) which are formed on the resin layer (14), and a process wherein the wafer (10) is diced to semiconductor chips. In the processes for forming the chrome layer (16) and for forming the solder balls, a metal thin film deposition technology used in the wafer process of semiconductor manufacturing is employed.

Abstract translation: 其封装尺寸与具有不需要柔性基板的应力吸收层的芯片的尺寸几乎相同的半导体器件，并且可以同时大量地制造。 一种制造半导体器件的方法包括其中在晶片（10）上形成电极（12）的工艺，其中在晶片（10）之外形成树脂层（14）作为应力降低层的工艺，除了部件 在形成电极（12）的方法中，在包括电极（12）和树脂层（14）的晶片（10）的整个表面上形成铬层（16）作为互连的工艺，其中 在形成在树脂层（14）上的铬层（16）的部分上形成焊球作为外部电极，以及将晶片（10）切割成半导体芯片的工序。 在用于形成铬层（16）和形成焊球的工艺中，采用在半导体制造的晶片工艺中使用的金属薄膜沉积技术。

公开(公告)号：WO1995022838A1

公开(公告)日：1995-08-24

申请号：PCT/SE1995000152

申请日：1995-02-14

Applicant: TELEFONAKTIEBOLAGET LM ERICSSON

Inventor： TELEFONAKTIEBOLAGET LM ERICSSON ,  HONG, Sam-Hyo

IPC: H01L23/532

CPC classification number: H01L24/13 ,  H01L21/76838 ,  H01L21/76885 ,  H01L23/3171 ,  H01L23/485 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/11472 ,  H01L2224/1191 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/351 ,  Y10S257/915 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 mu m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.

Abstract translation: 描述了用于微电路互连的PtSi / TiW / TiW（N）/ Au（I型）和PtSi / TiW / TiW（N）/ TiW / Au（II型）和相关工艺的两种金属化方案。 金属化方案和工艺能够实现金属间距小至1.5μm，甚至更小的IC互连。 金属化方案对于连续高温和高电流操作是可靠的。

公开(公告)号：WO2015175557A1

公开(公告)日：2015-11-19

申请号：PCT/US2015/030413

申请日：2015-05-12

Applicant: INVENSAS CORPORATION

Inventor： UZOH, Cyprian, Emeka ,  KATKAR, Rajesh

IPC: H01L21/60 ,  H01L23/485 ,  H01L21/48 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L21/98 ,  H01L25/10 ,  H01L25/065

CPC classification number: H01L23/49811 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/0266 ,  B23K35/22 ,  B23K2201/40 ,  B32B15/01 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03 ,  H01L2224/03001 ,  H01L2224/03009 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/03334 ,  H01L2224/0348 ,  H01L2224/03848 ,  H01L2224/03849 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0391 ,  H01L2224/04105 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05294 ,  H01L2224/05547 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/056 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/05855 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/2401 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/75253 ,  H01L2224/81 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82105 ,  H01L2224/83 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841

Abstract: In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion (510) of a solder ball's (140) surface is melted when the connection is formed on one structure (110) and/or when the connection is being attached to another structure (HOB). The structure (110) may be an integrated circuit, an interposer, a rigid or flexible wiring substrate, a printed circuit board, some other packaging substrate, or an integrated circuit package. In some embodiments, solder balls (140.1, 140.2) are joined by an intermediate solder ball (140i), upon melting of the latter only. Any of the solder balls (140, 140i) may have a non-solder central core (140C) coated by solder shell (140S). Some of the molten or softened solder may be squeezed out, to form a "squeeze-out" region (520, 520A, 520B, 520.1, 520.2). In some embodiments, a solder connection (210) such as discussed above, on a structure (110A), may be surrounded by a dielectric layer (1210), and may be recessed in a hole (1230) in that layer (1210), to help in aligning a post (1240) of a structure (HOB) with the connection (210) during attachment of the structures (110A, HOB). The dielectric layer (1210) may be formed by moulding. The dielectric layer may comprise a number of layers (1210.1, 1210.2), "shaved" (partially removed) to expose the solder connection (210). Alternatively, the recessed solder connections (210) may be formed using a sublimating or vapourisable material (1250), placed on top of the solder (210) before formation of the dielectric layer (1210) or coating solder balls (140); in the latter case, the solder (140C) sinks within the dielectric material (1210) upon removal of the material (1250) and subsequent reflow. In some embodiments, the solder connections (210) may also be formed in openings (2220) in a dielectric layer (2210) (photoimageable polymer or inorganic) by solder paste printing and/or solder ball jet placement followed by reflow to let the solder sink to the bottom of the openings (2220), with possible repetition of the process and possible use of different solders in the different steps. The solder connections (210, 210.1, 210.2) may be used for bonding one or more structures (HOB, HOC) (e.g. an integrated circuit die or wafer, a packaging substrate or a package) to a structure (110A) (a wiring substrate) on which a die (HOB) is flip-chip connected. The solder connections (210, 210.1, 210.2) may differ from each other, in particular in height, which can be used for attaching a structure (HOB) with posts (1240) of different heights or for attaching two structures (HOB, HOC) in the case of a stepped form of the dielectric layer, one of the structures (HOC) being possibly placed higher than the other structure (HOB). In some embodiments, the structure (HOA) may be removed after bonding to the structures (HOB, HOC) and a redistribution layer (3210) may be formed to provide connecting lines (3220) connecting the solder connections (210) to contact pads (120R) and possibly interconnecting between the solder connections (210) and/or between the contact pads (120R).

Abstract translation: 在一些实施例中，为了增加将不同结构与一个或多个焊球连接的焊料连接的高度与间距比，当焊接球（140）表面的一部分（510）形成在 一个结构（110）和/或当连接被附接到另一个结构（HOB）时。 结构（110）可以是集成电路，插入器，刚性或柔性布线基板，印刷电路板，一些其它封装基板或集成电路封装。 在一些实施例中，焊料球（140.1,140.2）仅在熔化时被中间焊球（140i）连接。 任何焊球（140,140i）可以具有由焊料壳（140S）涂覆的非焊料中心芯（140C）。 一些熔融或软化的焊料可能被挤出，以形成“挤出”区域（520,520A，520B，520.1,520.2）。 在一些实施例中，在结构（110A）上的如上所述的焊料连接（210）可被电介质层（1210）包围，并且可以凹入该层（1210）中的孔（1230）中， 以在结构（110A，110B）的附接期间帮助将结构的柱（1240）与连接件（210）对齐。 电介质层（1210）可以通过模制形成。 介电层可以包括多个层（1210.1,1212.2），“剃光”（部分去除）以暴露焊料连接（210）。 或者，可以在形成电介质层（1210）或涂覆焊球（140）之前使用升华或蒸发的材料（1250）形成凹陷的焊料连接（210），放置在焊料（210）的顶部上。 在后一种情况下，当去除材料（1250）和随后的回流时，焊料（140C）在电介质材料（1210）内下沉。 在一些实施例中，焊料连接（210）还可以通过焊膏印刷和/或焊球喷射放置形成在电介质层（2210）（可光成像的聚合物或无机）中的开口（2220）中，然后回流以使焊料 沉入开口（2220）的底部，可能重复该过程并可能在不同步骤中使用不同的焊料。 焊接连接（210,210.1,210.2）可以用于将一个或多个结构（HOB，HOC）（例如，集成电路管芯或晶片，封装衬底或封装）结合到结构（110A）（布线基板 ），其上晶片（HOB）被倒装连接。 焊接连接（210,210.1,210.2）可以彼此不同，特别是在高度上可以不同，其可用于将结构（HOB）与不同高度的柱（1240）连接或用于附接两个结构（HOB，HOC） 在阶梯形状的电介质层的情况下，结构（HOC）中的一个可能被放置得高于其他结构（HOB）。 在一些实施例中，可以在结合到结构（HOB，HOC）之后去除结构（HOA），并且可以形成再分布层（3210），以提供将焊接连接（210）连接到接触焊盘的连接线（3220） 120R），并且可能在焊料连接（210）和/或接触焊盘（120R）之间互连。

公开(公告)号：WO2015039043A2

公开(公告)日：2015-03-19

申请号：PCT/US2014/055695

申请日：2014-09-15

Applicant: INVENSAS CORPORATION

Inventor： HABA, Belgacem ,  CRISP, Richard, Dewitt ,  ZOHNI, Wael

IPC: H01L23/49 ,  H01L21/48

CPC classification number: H01L25/0657 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/49 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/745 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/1184 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13624 ,  H01L2224/13655 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16105 ,  H01L2224/16108 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/742 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/92142 ,  H01L2224/92143 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/00

Abstract: A microelectronic structure includes a semiconductor having conductive elements at a first surface. Wire bonds have bases joined to the conductive elements and free ends remote from the bases, the free ends being remote from the substrate and the bases and including end surfaces. The wire bonds define edge surfaces between the bases and end surfaces thereof. A compliant material layer extends along the edge surfaces within first portions of the wire bonds at least adjacent the bases thereof and fills spaces between the first portions of the wire bonds such that the first portions of the wire bonds are separated from one another by the compliant material layer. Second portions of the wire bonds are defined by the end surfaces and portions of the edge surfaces adjacent the end surfaces that are extend from a third surface of the compliant later.

Abstract translation: 微电子结构包括在第一表面具有导电元件的半导体。 线接合具有接合到导电元件和远离基座的自由端的基部，自由端远离基板和基部并且包括端面。 线接合限定其基端和端面之间的边缘表面。 顺应性材料层沿着线的第一部分中的边缘表面延伸，至少邻近其底部，并且填充引线接合的第一部分之间的空间，使得引线接合的第一部分通过顺应性 材料层。 线接合的第二部分由邻近端表面的端表面和边缘表面的部分限定，其从较柔性的第三表面延伸。

公开(公告)号：WO2014014652A1

公开(公告)日：2014-01-23

申请号：PCT/US2013/049021

申请日：2013-07-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： FAY, Owen R. ,  ENGLAND, Luke G. ,  GAMBEE, Christopher J.

IPC: H01L21/28 ,  H01L21/768

CPC classification number: H01L24/14 ,  H01L21/0274 ,  H01L21/311 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/35121 ,  H01L2924/365 ,  H01L2924/3651 ,  H01L2924/381 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2224/11

Abstract: Methods of fabricating interconnect structures for semiconductor dice comprise forming conductive elements in contact with bond pads on an active surface over a full pillar diameter of the conductive elements, followed by application of a photodefinable material comprising a photoresist to the active surface and over the conductive elements. The polyimide material is selectively exposed and developed to remove photodefinable material covering at least tops of the conductive elements. Semiconductor dice and semiconductor die assemblies are also disclosed.

Abstract translation: 制造用于半导体晶片的互连结构的方法包括形成与导电元件的全柱直径上的有源表面上的接合焊盘接触的导电元件，随后将包含光致抗蚀剂的可光限定材料施加到有源表面上并在导电元件上 。 聚酰亚胺材料被选择性地曝光和显影以除去覆盖至少导电元件顶部的可光限定材料。 还公开了半导体管芯和半导体管芯组件。

公开(公告)号：WO2013101241A1

公开(公告)日：2013-07-04

申请号：PCT/US2011/068275

申请日：2011-12-31

Applicant: INTEL CORPORATION ,  ALEKSOV, Alexsandar ,  DAMBRAUSKAS, Tony ,  FARUQUI, Danish ,  HLAD, Mark S. ,  PRACK, Edward R.

Inventor： ALEKSOV, Alexsandar ,  DAMBRAUSKAS, Tony ,  FARUQUI, Danish ,  HLAD, Mark S. ,  PRACK, Edward R.

IPC: H01L21/60 ,  H01L23/488

CPC classification number: H01L24/11 ,  H01L21/02118 ,  H01L21/02263 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/76883 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3142 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/1162 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81024 ,  H01L2224/81026 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/81375 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/81913 ,  H01L2224/831 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/3841 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

Abstract: Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.

Abstract translation: 描述了电子组件及其制造。 一个实施例涉及一种方法，包括在半导体晶片上的金属凸块上沉积有机薄膜层，该有机薄膜层也形成在与晶片上的金属凸块相邻的表面上。 将晶片切割成多个半导体管芯结构，该管芯结构包括有机薄膜层。 半导体管芯结构附着到基板上，其中，附接包括在管芯结构上的金属凸块和衬底上的焊盘之间形成焊料接合，并且其中焊料接合延伸穿过有机薄膜层。 然后将有机薄膜层暴露于等离子体。 描述和要求保护其他实施例。

公开(公告)号：WO2011149567A1

公开(公告)日：2011-12-01

申请号：PCT/US2011/023440

申请日：2011-02-02

Applicant: XILINX, INC.

Inventor： HART, Michael, J. ,  DE JONG, Jan, L. ,  WU, Paul, Y.

IPC: H01L23/00 ,  H01L23/556

CPC classification number: H01L24/13 ,  H01L23/556 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05567 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1191 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/1355 ,  H01L2924/0002 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/36 ,  H01L2224/05552

Abstract: An embodiment of a method of forming a semiconductor device that includes a substrate (202) having an active layer (204) and interconnect (206) formed on the active layer is described. The method includes: forming a dielectric layer (210) above the interconnect (206) having a tapered via (604) exposing at least a portion of a first metal layer (216); forming an under-bump metallization (UBM) layer (218) over the tapered via and the first metal layer to form a UBM bucket (606); and forming a dielectric cap layer (212) over the dielectric layer and a portion of the UBM layer. The UBM bucket is configured to support a solder ball (214) and can advantageously block all alpha particles emitted by the solder ball having a relevant angle of incidence from reaching the active semiconductor regions of the IC. Thus, soft errors, such as single event upsets in memory cells, are reduced or eliminated.

Abstract translation: 描述形成半导体器件的方法的实施例，该半导体器件包括在有源层上形成的具有有源层（204）和互连（206）的衬底（202）。 该方法包括：在互连（206）之上形成具有暴露第一金属层（216）的至少一部分的锥形通孔（604）的介电层（210）; 在所述锥形通孔和所述第一金属层上形成凸起下金属化（UBM）层（218）以形成UBM桶（606）; 以及在介电层和UBM层的一部分上形成电介质盖层（212）。 UBM桶被配置为支撑焊球（214），并且可以有利地阻挡具有相关入射角的焊球发射的所有α粒子到达IC的有源半导体区域。 因此，减少或消除了诸如存储器单元中的单个事件的混乱的软错误。