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公开(公告)号:CN107660308A
公开(公告)日:2018-02-02
申请号:CN201680031979.6
申请日:2016-05-23
申请人: 西门子公司
IPC分类号: H01L21/60 , H01L23/49 , H01L23/485
CPC分类号: H01L23/49 , C25D3/38 , C25D5/18 , C25D21/14 , H01L23/3733 , H01L23/3735 , H01L23/4922 , H01L23/49513 , H01L23/49537 , H01L23/49562 , H01L23/49568 , H01L23/49811 , H01L23/50 , H01L24/05 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/75 , H01L24/77 , H01L24/82 , H01L24/83 , H01L24/84 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04034 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/24105 , H01L2224/24227 , H01L2224/24245 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/3207 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/37005 , H01L2224/37111 , H01L2224/37124 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/37166 , H01L2224/3719 , H01L2224/37211 , H01L2224/37224 , H01L2224/37239 , H01L2224/37244 , H01L2224/37247 , H01L2224/37255 , H01L2224/37266 , H01L2224/3729 , H01L2224/373 , H01L2224/37395 , H01L2224/376 , H01L2224/4007 , H01L2224/40227 , H01L2224/40499 , H01L2224/756 , H01L2224/75703 , H01L2224/776 , H01L2224/77703 , H01L2224/821 , H01L2224/82101 , H01L2224/83007 , H01L2224/831 , H01L2224/834 , H01L2224/83411 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83466 , H01L2224/8349 , H01L2224/83511 , H01L2224/83524 , H01L2224/83539 , H01L2224/83544 , H01L2224/83547 , H01L2224/83555 , H01L2224/83566 , H01L2224/8359 , H01L2224/836 , H01L2224/83695 , H01L2224/8385 , H01L2224/83907 , H01L2224/84007 , H01L2224/841 , H01L2224/8485 , H01L2224/8492 , H01L2224/84951 , H01L2224/9201 , H01L2224/9205 , H01L2224/9221 , H01L2224/97 , H01L2924/13055 , H01L2924/181 , H05K3/424 , H01L2924/00012 , H05K3/4661 , H01L2924/00014 , H01L2924/01029 , H01L2924/01028 , H01L2924/01047 , H01L2924/01079 , H01L2924/0105 , H01L2224/83 , H01L2224/84 , H01L2224/82 , H01L2924/01014 , H01L23/485
摘要: 在用于使具有至少一个接触部的组件电接触的方法中,至少一个开孔接触件电镀式连接到至少一个接触部。因此构成组件模块。接触部优选是平面部分或者具有以下接触面:所述接触面的最大的平面延伸比接触部垂直于所述接触面的延伸更大。电镀式连接的温度为最高100℃、优选地最高60℃、适宜地最高20℃并且理想地最高5℃和/或与所述组件的运行温度偏差最高50℃、优选地最高20℃,尤其最高10℃并且理想地最高5℃、优选地最高2℃。组件可以借助所述接触件与另外的组件和/或导电体和/或衬底接触。优选地,考虑具有两个接触部的组件,所述两个接触部在所述组件的相互背离的侧上,其中,对于各个接触部,至少一个开孔接触件在所述接触部上电镀式连接。
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公开(公告)号:CN107230642A
公开(公告)日:2017-10-03
申请号:CN201710119851.1
申请日:2017-03-01
申请人: 富士电机株式会社
CPC分类号: H01L23/3735 , H01L21/4803 , H01L21/52 , H01L21/565 , H01L23/053 , H01L23/08 , H01L23/18 , H01L23/295 , H01L23/3121 , H01L24/01 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/29111 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45624 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2224/92247 , H01L2924/014 , H01L2924/0665 , H01L2924/067 , H01L2924/0705 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/13055 , H01L2924/15747 , H01L2924/1579 , H01L2924/181 , H01L2924/186 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/2076 , H01L21/561 , C08K3/32 , C08K2003/329 , H01L23/293 , C08L63/00
摘要: 提供一种提高密封材料与被密封部件和/或外壳部件之间的粘着性的、高可靠性半导体装置。该半导体装置具有层叠基板2和密封介质10,其中,层叠基板2上安装有半导体元件1,密封材料10包括环氧树脂主剂、硬化剂和膦酸。
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公开(公告)号:CN107078133A
公开(公告)日:2017-08-18
申请号:CN201680003401.X
申请日:2016-04-29
申请人: 德卡技术股份有限公司
发明人: C.M.斯坎伦
IPC分类号: H01L27/00
CPC分类号: H01L21/78 , H01L21/52 , H01L21/561 , H01L21/565 , H01L21/568 , H01L23/295 , H01L23/3135 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5389 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/92 , H01L24/96 , H01L24/97 , H01L25/16 , H01L2224/04105 , H01L2224/11334 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16227 , H01L2224/2732 , H01L2224/27334 , H01L2224/2745 , H01L2224/27462 , H01L2224/27464 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29294 , H01L2224/293 , H01L2224/32227 , H01L2224/73267 , H01L2224/83192 , H01L2224/83815 , H01L2224/83911 , H01L2224/83913 , H01L2224/83986 , H01L2224/92 , H01L2224/97 , H01L2924/15313 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2224/81 , H01L2924/01082 , H01L2924/0105 , H01L2924/014 , H01L2924/00014 , H01L2224/81815 , H01L2224/8191 , H01L22/00 , H01L21/56 , H01L2224/8391
摘要: 本发明公开了一种制备半导体部件封装的方法,该方法可包括:提供包括导电迹线的基板;利用焊料将表面安装装置(SMD)焊接至该基板;利用第一模制化合物在该SMD上方并围绕该SMD包封该基板上的该SMD以形成部件组件;以及将该部件组件安装至临时载体,其中该部件组件的第一侧面朝向该临时载体取向。该方法还可包括:将包括导电互连件的半导体模片邻近该部件组件安装至该临时载体;利用第二模制化合物包封该部件组件和该半导体模片以形成重构板材;以及使该导电互连件和导电迹线相对于该第二模制化合物暴露在该部件组件的第一侧面和第二侧面处。
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公开(公告)号:CN106887421A
公开(公告)日:2017-06-23
申请号:CN201611089632.5
申请日:2016-12-01
申请人: 丰田自动车株式会社
IPC分类号: H01L23/488
CPC分类号: H01L23/49562 , H01L23/051 , H01L23/3121 , H01L23/4334 , H01L23/4951 , H01L23/49513 , H01L23/49568 , H01L23/49572 , H01L23/49575 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/33 , H01L29/7395 , H01L29/861 , H01L2224/291 , H01L2224/29111 , H01L2224/29116 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32503 , H01L2224/33181 , H01L2224/83447 , H01L2224/83455 , H01L2224/83909 , H01L2924/014 , H01L2924/1203 , H01L2924/12032 , H01L2924/12036 , H01L2924/13055 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/0105 , H01L2924/00012 , H01L24/31 , H01L2224/32501 , H01L2924/01028 , H01L2924/01029
摘要: 本发明涉及一种半导体装置,其具备半导体元件与导电性部件。半导体元件具有第一电极与第二电极,并允许电流从第一电极向第二电极流通且禁止电流从第二电极向第一电极流通。导电性部件经由焊锡接合层而与半导体元件的第二电极接合。与焊锡接合层接触的第二电极的表面由以镍为主要成分的金属材料构成,与焊锡接合层接触的导电性部件的表面由以铜为主要成分的金属材料构成。而且,焊锡接合层具有第一化合物层和第二化合物层,所述第一化合物层位于焊锡接合层与第二电极的界面处且由镍‑锡系的金属间化合物构成,所述第二化合物层位于焊锡接合层与所述导电性部件的界面处且由铜‑锡系的金属间化合物构成。
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公开(公告)号:CN106716632A
公开(公告)日:2017-05-24
申请号:CN201580052153.3
申请日:2015-09-17
申请人: 欧司朗光电半导体有限公司
发明人: 安德烈亚斯·普洛斯尔
IPC分类号: H01L23/538 , H01L23/52 , H01L21/60
CPC分类号: H01L24/29 , H01L23/15 , H01L23/49513 , H01L23/49866 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/15 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/40 , H01L33/62 , H01L2224/0345 , H01L2224/0401 , H01L2224/04026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05669 , H01L2224/05673 , H01L2224/05678 , H01L2224/1132 , H01L2224/11334 , H01L2224/1141 , H01L2224/11436 , H01L2224/13294 , H01L2224/13339 , H01L2224/13347 , H01L2224/16227 , H01L2224/16245 , H01L2224/2732 , H01L2224/27334 , H01L2224/2741 , H01L2224/27436 , H01L2224/29083 , H01L2224/29084 , H01L2224/29124 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29173 , H01L2224/29178 , H01L2224/29294 , H01L2224/29339 , H01L2224/29347 , H01L2224/32227 , H01L2224/32245 , H01L2224/32503 , H01L2224/73265 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/81205 , H01L2224/81207 , H01L2224/81208 , H01L2224/81469 , H01L2224/81473 , H01L2224/81478 , H01L2224/8184 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83208 , H01L2224/83359 , H01L2224/83439 , H01L2224/83447 , H01L2224/83469 , H01L2224/83473 , H01L2224/83478 , H01L2224/8384 , H01L2924/00015 , H01L2924/1033 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/13014 , H01L2924/13064 , H01L2924/15724 , H01L2924/00014 , H01L2224/05644 , H01L2224/05639 , H01L2924/00012
摘要: 提出一种电子设备,所述电子设备具有第一器件(1)和第二器件(2),所述第一器件和所述第二器件借助具有第一金属的烧结层(3)彼此连接,其中所述器件(1,2)中的至少一个器件具有至少一个接触层(4,4’),所述接触层以与所述烧结层(3)直接接触的方式设置,所述烧结层具有与第一金属不同的第二金属并且所述烧结层不含金。此外,提出一种用于制造电子设备的方法。
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公开(公告)号:CN106660153A
公开(公告)日:2017-05-10
申请号:CN201580046808.6
申请日:2015-07-15
申请人: 阿尔法装配解决方案公司
IPC分类号: B23K1/00 , B23K1/002 , B23K1/005 , B23K1/08 , B23K35/00 , B23K35/14 , B23K35/26 , C22C13/00 , C22C13/02
CPC分类号: B23K35/262 , B23K1/0016 , B23K1/002 , B23K1/0056 , B23K1/085 , B23K35/00 , B23K35/0222 , B23K35/0227 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/025 , B23K35/26 , B23K2101/40 , B23K2101/42 , C22C13/00 , C22C13/02 , H01L24/29 , H01L24/83 , H01L2224/29101 , H01L2224/29105 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29117 , H01L2224/29123 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29149 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29163 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29172 , H01L2224/2918 , H01L2224/83815 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01034 , H01L2924/01052 , H01L2924/01058
摘要: 无铅无锑的焊料合金,其包含:(a)从1至4重量%银(b)从0.5至6重量%铋(c)从3.55至15重量%铟(d)3重量%或更少的铜(e)任选地下列元素中的一种或多种:0至1重量%镍、0至1重量%的钛、0至1重量%锰、0至1重量%的稀土(例如铈)、0至1重量%的铬、0至1重量%锗、0至1重量%的镓、0至1重量%的钴、0至1重量%的铁、0至1重量%的铝、0至1重量%的磷、0至1重量%的金、0至1重量%的碲、0至1重量%的硒、0至1重量%的钙、0至1重量%的钒、0至1重量%的钼、0至1重量%的铂、0至1重量%的镁(f)余量为锡连同任何不可避免的杂质。
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公开(公告)号:CN105742193A
公开(公告)日:2016-07-06
申请号:CN201510971451.4
申请日:2015-12-22
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L21/56 , H01L25/07 , H01L23/538
CPC分类号: H01L24/81 , B81C1/00238 , B81C3/001 , B81C2203/031 , B81C2203/035 , H01L21/50 , H01L23/10 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/80 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/03602 , H01L2224/03614 , H01L2224/03616 , H01L2224/03912 , H01L2224/0401 , H01L2224/04026 , H01L2224/05022 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05149 , H01L2224/05155 , H01L2224/05166 , H01L2224/05184 , H01L2224/05548 , H01L2224/05567 , H01L2224/05569 , H01L2224/05571 , H01L2224/056 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05684 , H01L2224/06051 , H01L2224/08225 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/119 , H01L2224/11912 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/16014 , H01L2224/16147 , H01L2224/2745 , H01L2224/27452 , H01L2224/27462 , H01L2224/27464 , H01L2224/2747 , H01L2224/27614 , H01L2224/279 , H01L2224/27912 , H01L2224/29011 , H01L2224/29013 , H01L2224/29014 , H01L2224/29082 , H01L2224/291 , H01L2224/29111 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29149 , H01L2224/29155 , H01L2224/29164 , H01L2224/29166 , H01L2224/32014 , H01L2224/32147 , H01L2224/32225 , H01L2224/73103 , H01L2224/80805 , H01L2224/80893 , H01L2224/80894 , H01L2224/80895 , H01L2224/80896 , H01L2224/81815 , H01L2224/8183 , H01L2224/83805 , H01L2224/83815 , H01L2224/8383 , H01L2224/92 , H01L2224/9202 , H01L2224/94 , H01L2924/10158 , H01L2924/1461 , H01L2924/163 , H01L2924/00014 , H01L2924/01014 , H01L2224/03 , H01L2224/11 , H01L2224/27 , H01L2924/00012 , H01L2224/0347 , H01L2924/014 , H01L2224/81 , H01L2224/83 , H01L2224/114 , H01L2224/1146 , H01L2224/1161 , H01L2224/274 , H01L2224/2746 , H01L2224/2761 , H01L21/302 , H01L2224/034 , H01L2224/0361 , H01L2224/80 , H01L21/561 , H01L23/538 , H01L23/5389 , H01L25/071
摘要: 本发明的实施例提供了一种接合结构及其形成方法。在接合结构的第一表面上形成导电层,接合结构包括接合至第二衬底的第一衬底,接合结构的第一表面是第一衬底的暴露的表面。在导电层上形成具有第一开口和第二开口的图案化的掩模,第一开口和第二开口暴露导电层的一部分。在第一开口中形成第一接合连接件的第一部分,并且在第二开口中形成第二接合连接件的第一部分。图案化导电层以形成第一接合连接件的第二部分和第二接合连接件的第二部分。使用第一接合连接件和第二接合连接件将接合结构接合至第三衬底。
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公开(公告)号:CN102883991B
公开(公告)日:2015-06-10
申请号:CN201180010791.0
申请日:2011-03-01
申请人: 森松诺尔技术有限公司
IPC分类号: B81C1/00
CPC分类号: B81C1/00269 , B81C2203/0118 , B81C2203/035 , H01L21/50 , H01L23/10 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/27462 , H01L2224/27464 , H01L2224/276 , H01L2224/29011 , H01L2224/29082 , H01L2224/29111 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/32145 , H01L2224/83007 , H01L2224/83193 , H01L2224/83204 , H01L2224/83207 , H01L2224/8381 , H01L2224/83825 , H01L2224/8383 , H01L2224/94 , H01L2225/06513 , H01L2924/00013 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/1461 , H01L2924/16235 , H01L2924/164 , Y10T428/12493 , H01L2924/00014 , H01L2224/83 , H01L2224/81 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要: 一种金属内扩散连接方法,用于形成MEMS装置的气密密封的晶片级封装,包括下列步骤:在第一晶片和第二晶片的表面上提供第一金属堆,第一金属在空气中易氧化;在每一个第一金属堆的上表面上提供第二金属层,第二金属具有比第一金属低的熔点,所述第二金属层的厚度足以抑制所述第一金属上表面的氧化;使所述第一晶片上的第二金属层接触第二晶片上的第二金属层以形成连接界面;以及在低于所述第二金属的熔点的连接温度向第一和第二晶片施加连接压力以促使连接,所述连接压力足以使连接界面处的第二金属层变形。
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公开(公告)号:CN104617067A
公开(公告)日:2015-05-13
申请号:CN201410613709.9
申请日:2014-11-04
申请人: 开益禧株式会社
IPC分类号: H01L23/48 , H01L23/49 , H01L23/495
CPC分类号: H01L23/49531 , H01L23/4827 , H01L23/49513 , H01L23/49575 , H01L23/49582 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05172 , H01L2224/05617 , H01L2224/0562 , H01L2224/05623 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05672 , H01L2224/29082 , H01L2224/29083 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29117 , H01L2224/29118 , H01L2224/2912 , H01L2224/29123 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/32245 , H01L2224/32501 , H01L2224/32505 , H01L2224/83191 , H01L2224/83825 , H01L2224/92247 , H01L2924/00014 , H01L2924/01322 , H01L2924/13055 , H01L2924/13091 , H01L2924/351 , H01L2924/3651 , H01L2924/00 , H01L2924/01014 , H01L2924/01032 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要: 提供了一种半导体器件及其接合结构,其中不与半导体裸片或引线框架形成金属间化合物,从而改善电特性和机械特性以及可润湿性,且抑制裸片接合材料的聚集。所述半导体器件包括:半导体裸片、形成在半导体裸片的表面上的阻挡层、形成在阻挡层上的第一金属层、形成在第一金属层上的中间金属层,以及形成在中间金属层上的第二金属层。这里,第一金属层和第二金属层具有第一熔化温度,中间金属层具有低于第一熔化温度的第二熔化温度。
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公开(公告)号:CN102447025B
公开(公告)日:2015-03-11
申请号:CN201110360898.X
申请日:2008-08-12
申请人: 科里公司
CPC分类号: H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要: 公开了一种发光二极管结构(37),其包括由外延层(21,22)形成的发光激活部和支承该激活部的载体基底(23)。以镍和锡为主的接合金属体系(27)将该激活部连接至该载体基底。至少一层钛粘附层(25,26)在该激活部与该载体基底之间,铂阻挡层(35,40)在该镍-锡接合体系与该钛粘附层之间。该铂层具有的厚度足以基本上防止该镍锡接合体系中的锡迁移至该钛粘附层中或迁移通过该钛粘附层。
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