公开(公告)号：US08552552B2

公开(公告)日：2013-10-08

申请号：US12239810

申请日：2008-09-28

申请人： Shinya Suzuki

发明人： Shinya Suzuki

IPC分类号： H01L23/485 ,  H01L23/528

CPC分类号： H01L24/14 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/13458 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/768 ,  H01L21/76819 ,  H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L27/13 ,  H01L29/7833 ,  H01L2224/02122 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05075 ,  H01L2224/051 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/056 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13144 ,  H01L2224/14153 ,  H01L2224/16225 ,  H01L2224/271 ,  H01L2224/2929 ,  H01L2224/29355 ,  H01L2224/29444 ,  H01L2224/32225 ,  H01L2224/81 ,  H01L2224/81191 ,  H01L2224/8185 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2224/93 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/83 ,  H01L2924/00

摘要： A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

摘要翻译： 一种提高半导体芯片的凸块电极与安装基板的配线之间的耦合可靠性的技术，更具体地说，即使在布线位于突起电极下方的顶部布线层中时也能保证凸块电极的平坦度的技术，由此 提高凸起电极和形成在玻璃基板上的布线之间的耦合的可靠性。 在突起电极的非重叠区域下方的顶部布线层中形成由电力线或信号线构成的布线和虚设图案。 虚拟图案位于填充布线之间的空间以减少由布线引起的不规则和顶部布线层中的空间。 形成为覆盖顶部布线层的表面保护膜被CMP平坦化。

公开(公告)号：US08546254B2

公开(公告)日：2013-10-01

申请号：US12859379

申请日：2010-08-19

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C25D5/022 ,  C25D5/10 ,  C25D17/12 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/742 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration.

摘要翻译： 通过使用图案化阳极描述的制备凸块结构的机理可以简化凸块制造工艺，降低制造成本，并且改善晶片内和晶片之间的厚度均匀性。 此外，上述机构允许形成具有不同高度的凸块，以允许凸块与不同高度的基板上的元件一体化。 具有不同高度的冲击扩大了铜柱凸起的应用，以实现进一步的芯片集成。

公开(公告)号：US08492891B2

公开(公告)日：2013-07-23

申请号：US12765250

申请日：2010-04-22

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Jacky Chang ,  Chung-Shi Liu ,  Chen-Hua Yu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Jacky Chang ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13455 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

摘要翻译： 铜柱凸起具有由电解金属层形成的侧壁保护层。 电解金属层是电解镍层，电解金层，电解铜层或电解银层。

公开(公告)号：US20130154127A1

公开(公告)日：2013-06-20

申请号：US13330316

申请日：2011-12-19

申请人： Eugene M. Chow ,  Eric J. Shrader ,  John S. Paschkewitz

发明人： Eugene M. Chow ,  Eric J. Shrader ,  John S. Paschkewitz

IPC分类号： H01L23/498 ,  H05K7/20

CPC分类号： H01L23/36 ,  H01L23/3677 ,  H01L23/42 ,  H01L23/473 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/72 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06519 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/1146 ,  H01L2224/1161 ,  H01L2224/11618 ,  H01L2224/11825 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1318 ,  H01L2224/13184 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/136 ,  H01L2224/1401 ,  H01L2224/14051 ,  H01L2224/16225 ,  H01L2224/17519 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/81902 ,  H01L2224/81903 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01024 ,  H01L2924/0104 ,  H01L2924/014 ,  H01L2924/00

摘要： In a system for providing temporary or permanent connection of an integrated circuit die to a base substrate using electrical microsprings, a thermal element is provided that assists with cooling of the pad structure during use. The thermal element may be formed of the same material and my similar processes as the microsprings. The thermal element may be one or more block structures or one or more thermal microsprings. The thermal element may be provided with channels to contain and/or direct the flow of a thermal transfer fluid. Cooling of components associated with the pad structure (e.g., ICs) may be provided.

摘要翻译： 在使用电子微弹簧将集成电路管芯临时或永久连接到基底基板的系统中，提供了一种热元件，其有助于在使用期间对焊盘结构进行冷却。 热元件可以由与微弹簧相同的材料和我类似的方法形成。 热元件可以是一个或多个块结构或一个或多个热微型弹簧。 热元件可以设置有容纳和/或引导热传递流体的流动的通道。 可以提供与衬垫结构（例如，IC）相关联的部件的冷却。

公开(公告)号：US08445092B2

公开(公告)日：2013-05-21

申请号：US12812932

申请日：2009-01-28

申请人： Yasunori Karasawa ,  Tatsuo Fukuda

发明人： Yasunori Karasawa ,  Tatsuo Fukuda

IPC分类号： H05K1/16 ,  C08L33/10

CPC分类号： H01L21/6835 ,  C08G18/6229 ,  C08G18/672 ,  C08G18/8116 ,  C09D175/04 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/145 ,  H01L24/19 ,  H01L24/20 ,  H01L24/31 ,  H01L24/82 ,  H01L24/83 ,  H01L24/96 ,  H01L2221/68359 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15788 ,  H05K1/032 ,  H05K1/185 ,  Y10T428/22 ,  Y10T428/24 ,  Y10T428/24008 ,  H01L2924/00 ,  H01L2924/3512

摘要： A resin sheet for circuit boards (2) obtained from a macromolecular material of the energy ray curable type and used for embedding circuit chips, which has a double bond concentration of 4.5 to 25 mmol/g before being cured by irradiation with an energy ray; a sheet for circuit boards including the resin sheet for circuit boards, one face of the resin sheet being formed on a support (1); and a circuit board for displays (5) which is obtained by embedding circuit chips (3) into a face of the resin sheet for circuit boards in the sheet for circuit boards, followed by curing the resin sheet by irradiation with an energy ray. The resin sheet for circuit boards (2) can be advantageously used for producing circuit boards having embedded circuit chips for controlling each pixel of displays, in particular, flat panel displays efficiently with excellent quality and productivity.

摘要翻译： 由能量射线固化型高分子材料得到的电路板用树脂片（2），用于在通过用能量射线照射固化之前具有4.5〜25mmol / g的双键浓度的电路芯片的嵌入电路芯片; 用于电路板的电路板，包括用于电路板的树脂片，树脂片的一个表面形成在支撑件（1）上; 以及通过将电路芯片（3）嵌入到用于电路板的电路板的电路板的表面中而获得的用于显示器（5）的电路板，然后通过用能量射线照射来固化树脂片。 用于电路板（2）的树脂片可以有利地用于制造具有嵌入式电路芯片的电路板，用于以优异的质量和生产率有效地控制显示器的每个像素，特别是平板显示器。

公开(公告)号：US20130099396A1

公开(公告)日：2013-04-25

申请号：US13707941

申请日：2012-12-07

申请人： Henkel Corporation

发明人： Jeffrey Gasa ,  Dung Nghi Phan ,  Jeffrey Leon ,  Sharad Hajela ,  Shengqian Kong

IPC分类号： C08L63/00 ,  H01L23/29 ,  H01L21/56

CPC分类号： C08L63/00 ,  C08G77/28 ,  C08L83/08 ,  H01L21/56 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/296 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/2937 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/29393 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/04642 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A process for coating a semiconductor wafer with a coating composition comprises curing the coating with a pulsed UV light, thereby preventing delamination during reflow operations. In a particular embodiment, the coating composition comprises both epoxy and acrylate resins. The epoxy resin can be cured thermally; the acrylate resin is cured by UV irradiation.

摘要翻译： 用涂料组合物涂覆半导体晶片的方法包括用脉冲UV光固化涂层，从而防止回流操作期间的分层。 在一个具体实施方案中，涂料组合物包含环氧树脂和丙烯酸酯树脂。 环氧树脂可以热固化; 丙烯酸酯树脂通过UV照射固化。

公开(公告)号：US08410586B2

公开(公告)日：2013-04-02

申请号：US12247031

申请日：2008-10-07

申请人： Edmund Riedl ,  Steffen Jordan ,  Christof Matthias Schilz ,  Fee Hoon Wong

发明人： Edmund Riedl ,  Steffen Jordan ,  Christof Matthias Schilz ,  Fee Hoon Wong

IPC分类号： H01L21/50 ,  H01L23/495

CPC分类号： H01L23/3142 ,  C25D3/56 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48655 ,  H01L2224/73265 ,  H01L2224/85455 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor package includes a semiconductor component including a circuit carrier with a plurality of inner contact pads, a semiconductor chip, and a plurality of electrical connections. An adhesion promotion layer is disposed on at least areas of the semiconductor component and a plastic encapsulation material encapsulates at least the semiconductor chip, the plurality of electrical connections and the plurality of the inner contact pads. Surface regions of the semiconductor component are selectively activated.

摘要翻译： 半导体封装包括半导体部件，其包括具有多个内部接触焊盘的电路载体，半导体芯片和多个电连接。 粘合促进层设置在半导体部件的至少一部分上，并且塑料封装材料至少封装半导体芯片，多个电连接和多个内部接触焊盘。 选择性地激活半导体部件的表面区域。

公开(公告)号：US08405218B2

公开(公告)日：2013-03-26

申请号：US12887874

申请日：2010-09-22

申请人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

发明人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76804 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/741 ,  H01L2224/02166 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11505 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/749 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

摘要翻译： 在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。 通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。 锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

公开(公告)号：US20130058061A1

公开(公告)日：2013-03-07

申请号：US13696862

申请日：2011-05-09

申请人： Minoru Satoh ,  Takehiro Yamashita ,  Atsushi Nagai ,  Yasuo Adachi

发明人： Minoru Satoh ,  Takehiro Yamashita ,  Atsushi Nagai ,  Yasuo Adachi

IPC分类号： H05K7/04 ,  H01B1/02 ,  H05K13/04 ,  H05K7/06

CPC分类号： H01L23/49883 ,  H01B1/16 ,  H01L23/15 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/85399 ,  H01L2224/859 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00

摘要： This electronic component is provided with an inorganic substrate, a conductor film formed on a surface of the substrate, and bonding wires bonded to a part of said conductor film, and wire bonding sections are formed on at least a part of the electronic component. The part of the conductor film at least forming the aforementioned wire bonding sections contains an Ag-based metal formed of Ag or an alloy having Ag as the main constituent and a metal oxide which coats said Ag-based metal and which has, as a constituent element, any of the elements selected from the group consisting of Al, Zr, Ti, Y, Ca, Mg, and Zn. The coating quantity of the metal oxide is a quantity corresponding to 0.02 to 0.1 parts by mass relative to 100 parts by mass of the aforementioned Ag-based metal.

摘要翻译： 该电子部件设置有无机基板，形成在基板的表面上的导体膜和与导体膜的一部分接合的接合引线，并且在电子部件的至少一部分上形成引线接合部。 至少形成上述引线接合部分的导体膜的部分包含由Ag或以Ag为主要成分的合金的Ag基金属和涂覆所述Ag基金属的金属氧化物，并且其具有作为成分 元素，选自由Al，Zr，Ti，Y，Ca，Mg和Zn组成的组中的任何元素。 金属氧化物的涂布量相对于上述Ag系金属100质量份为0.02〜0.1质量份。

公开(公告)号：US08389860B2

公开(公告)日：2013-03-05

申请号：US12669612

申请日：2008-12-03

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC分类号： H01B5/00 ,  H01B7/18 ,  H01B9/02

CPC分类号： C22C5/02 ,  B23K35/0222 ,  B23K35/302 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C9/01 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45683 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48486 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01001 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/20658 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/0104 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.

摘要翻译： 用于半导体器件的接合线包括由导电金属形成的芯部件和主要由不同于芯部件的面心立方金属形成在其上的表皮层。 在皮肤层表面的晶面处的线长度方向上的取向<100 <方向<100>的取向比大于或等于50％，并且<100>取向具有相对的角度差 到电线长度方向。 角度差在15度以内。