公开(公告)号：US20150325542A1

公开(公告)日：2015-11-12

申请号：US14804617

申请日：2015-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Jen Tseng ,  Chang-Chia Huang ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/00

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.

摘要翻译： 凸块结构包括形成在衬底上的接触元件和覆盖衬底的钝化层。 钝化层包括暴露接触元件的钝化开口。 凸块结构还包括覆盖钝化层的聚酰亚胺层和电耦合到接触元件的凸块下冶金（UBM）特征。 聚酰亚胺层具有暴露接触元件的聚酰亚胺开口，凸起下的金属特征具有UBM宽度。 凸起结构还包括在凸起下金属冶金特征上的铜柱。 铜柱的前端具有柱宽，UBM宽度大于柱宽。

公开(公告)号：US09159695B2

公开(公告)日：2015-10-13

申请号：US13735750

申请日：2013-01-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yao-Chun Chuang ,  Chita Chuang ,  Ming Hung Tseng ,  Chen-Shien Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L24/13 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/13005 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/14155 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/814 ,  H01L2224/81424 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81484 ,  H01L2224/81815 ,  H01L2924/00012 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/206 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01047

摘要： A package structure includes a chip attached to a substrate. The chip includes a bump structure including a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar. The substrate includes a pad region and a mask layer overlying the pad region, wherein the mask layer has an opening exposing a portion of the pad region. The chip is attached to the substrate to form an interconnection between the conductive pillar and the pad region. The opening has a first dimension (d1) measured along the long axis and a second dimension (d2) measured along the short axis. In an embodiment, L is greater than d1, and W is less than d2.

摘要翻译： 封装结构包括附接到衬底的芯片。 该芯片包括一个凸块结构，该凸块结构包括沿着导电柱的长轴测量的长度（L）的导电柱和沿着导电柱的短轴测量的宽度（W）。 衬底包括衬垫区域和覆盖衬垫区域的掩模层，其中掩模层具有露出焊盘区域的一部分的开口。 芯片附着到基板上以形成导电柱和焊盘区域之间的互连。 开口具有沿长轴测量的第一尺寸（d1）和沿着短轴测量的第二尺寸（d2）。 在一个实施例中，L大于d1，W小于d2。

公开(公告)号：US09112049B2

公开(公告)日：2015-08-18

申请号：US14327899

申请日：2014-07-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin

IPC分类号： H01L23/00

CPC分类号： H01L24/17 ,  H01L23/3192 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/175 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

摘要翻译： 一种结构包括具有第一金属凸块的第一半导体芯片和具有第二金属凸块的第二半导体芯片。 所述结构还包括电连接所述第一半导体芯片和所述第二半导体芯片的焊接结构，其中所述焊点结构包括在所述第一金属凸块和所述第二金属凸块之间的金属间化合物区域，其中所述金属间化合物区域具有第一 高度尺寸和沿着第一金属凸块和第二金属凸块的外壁形成的周围部分，其中周围部分具有第二高度尺寸，并且其中第二高度尺寸大于第一高度尺寸。

公开(公告)号：US20150228587A1

公开(公告)日：2015-08-13

申请号：US14179854

申请日：2014-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jung Wei Cheng ,  Tsung-Ding Wang ,  Chien-Hsun Lee

IPC分类号： H01L23/544 ,  H01L23/00

CPC分类号： H01L24/14 ,  H01L21/78 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/0214 ,  H01L2224/0215 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03622 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05024 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06132 ,  H01L2224/06179 ,  H01L2224/06517 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14104 ,  H01L2224/14132 ,  H01L2224/14134 ,  H01L2224/14179 ,  H01L2224/14517 ,  H01L2224/16013 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17051 ,  H01L2224/17515 ,  H01L2224/17517 ,  H01L2224/81007 ,  H01L2224/81139 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81345 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/01022 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

摘要： An integrated circuit structure includes an alignment bump and an active electrical connector. The alignment bump includes a first non-solder metallic bump. The first non-solder metallic bump forms a ring encircling an opening therein. The active electrical connector includes a second non-solder metallic bump. A surface of the first non-solder metallic bump and a surface of the second non-solder metallic bump are substantially coplanar with each other.

摘要翻译： 集成电路结构包括对准凸块和有源电连接器。 对准凸块包括第一非焊接金属凸块。 第一非焊接金属凸块形成环绕其中的开口的环。 有源电连接器包括第二非焊接金属凸块。 第一非焊料金属凸块的表面和第二非焊料金属凸块的表面基本上彼此共面。

公开(公告)号：US09105530B2

公开(公告)日：2015-08-11

申请号：US13904885

申请日：2013-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Jen Tseng ,  Chang-Chia Huang ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/498 ,  H01L21/768 ,  H01L23/00 ,  H01L21/48

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar width, and the UBM width is greater than the pillar width.

摘要翻译： 凸块结构包括形成在衬底上的接触元件和覆盖衬底的钝化层。 钝化层包括暴露接触元件的钝化开口。 凸起结构还包括覆盖钝化层的聚酰亚胺层和电耦合到接触元件的凸块下金属（UBM）特征。 聚酰亚胺层具有暴露接触元件的聚酰亚胺开口，凸起下的金属特征具有UBM宽度。 凸起结构还包括在凸起下金属冶金特征上的铜柱。 铜柱宽度的远端，UBM宽度大于柱宽。

公开(公告)号：US09093314B2

公开(公告)日：2015-07-28

申请号：US14579326

申请日：2014-12-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin ,  Ya-Hsi Hwung ,  Hsin-Yu Chen ,  Po-Hao Tsai ,  Yan-Fu Lin ,  Cheng-Lin Huang ,  Fang Wen Tsai ,  Wen-Chih Chiou

IPC分类号： H01L21/4763 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L23/488 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05099 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/1182 ,  H01L2224/11823 ,  H01L2224/1191 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13578 ,  H01L2224/13583 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1369 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/37001 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/05552 ,  H01L2224/81805

摘要： A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.

摘要翻译： 工件包括具有顶表面和侧壁的铜凸块。 在铜凸块的侧壁而不是顶表面上形成保护层。 保护层包括铜和聚合物的化合物，并且是介电层。

公开(公告)号：US09093313B2

公开(公告)日：2015-07-28

申请号：US14481766

申请日：2014-09-09

申请人： Intel Corporation

发明人： Mark S. Hlad ,  Islam A. Salama ,  Mihir K. Roy ,  Tao Wu ,  Yueli Liu ,  Kyu Oh Lee

IPC分类号： H01L21/4763 ,  H01L23/00 ,  H05K1/11 ,  H05K3/10 ,  H05K3/42 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H05K3/34

CPC分类号： H01L23/49838 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/563 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/50 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11466 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1601 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/165 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81444 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01103 ,  H01L2924/01108 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15321 ,  H01L2924/2064 ,  H01L2924/37001 ,  H01L2924/3841 ,  H05K1/113 ,  H05K3/107 ,  H05K3/3436 ,  H05K3/421 ,  H01L2924/00014 ,  H01L2924/00

摘要： Package substrates enabling reduced bump pitches and package assemblies thereof. Surface-level metal features are embedded in a surface-level dielectric layer with surface finish protruding from a top surface of the surface-level dielectric for assembly, without solder resist, to an IC chip having soldered connection points. Package substrates are fabricated to enable multiple levels of trace routing with each trace routing level capable of reduced minimum trace width and spacing.

摘要翻译： 封装衬底，能够减少凸起间距和封装组件。 表面级金属特征嵌入表面级电介质层中，其表面光洁度从表面电介质的顶表面突出，用于组装而无阻焊，具有焊接连接点的IC芯片。 制造封装衬底以实现多级跟踪路由，每个跟踪路由级别能够减少最小迹线宽度和间距。

公开(公告)号：US20150171038A1

公开(公告)日：2015-06-18

申请号：US14635889

申请日：2015-03-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin ,  Po-Hao Tsai

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L21/563 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/06102 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11612 ,  H01L2224/11614 ,  H01L2224/1182 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/14155 ,  H01L2224/14156 ,  H01L2224/14177 ,  H01L2224/14515 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16168 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/1703 ,  H01L2224/17517 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/01108 ,  H01L2224/11 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01082 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/00

摘要： A package structure includes a first substrate bonded to a second substrate by connecting metal pillars on the first substrate to connectors on the second substrate. A first metal pillar is formed overlying and electrically connected to a metal pad on a first region of the first substrate, and a second metal pillar is formed overlying a passivation layer in a second region of the first substrate. A first solder joint region is formed between metal pillar and the first connector, and a second solder joint region is formed between the second metal pillar and the second connector. The thickness of the first metal pillar is greater than the thickness of the second metal pillar.

摘要翻译： 封装结构包括通过将第一基板上的金属柱连接到第二基板上的连接器而将第一基板接合到第二基板。 第一金属柱形成在第一衬底的第一区域上并覆盖并电连接到金属焊盘，第二金属柱形成在第一衬底的第二区域中的钝化层上。 在金属柱和第一连接器之间形成第一焊接区域，在第二金属柱和第二连接器之间形成第二焊点区域。 第一金属柱的厚度大于第二金属柱的厚度。

公开(公告)号：US09048225B2

公开(公告)日：2015-06-02

申请号：US14185872

申请日：2014-02-20

申请人： Shinko Electric Industries Co., LTD.

发明人： Sumihiro Ichikawa ,  Takaharu Yamano

IPC分类号： H01L29/02 ,  H01L23/48 ,  H01L25/065 ,  H01L23/31 ,  H01L25/00

CPC分类号： H01L23/481 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/02379 ,  H01L2224/03002 ,  H01L2224/03464 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/06181 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/9205 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06568 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/0665 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate. A through hole extends through the semiconductor substrate. A first insulating layer covers an upper surface of the semiconductor substrate and includes an opening in communication with the through hole. An insulating film covers wall surfaces of the through hole and the opening. A through electrode is formed in the through hole and the opening. A first connection terminal includes an electroless plating metal layer formed on an end surface of the through electrode and an end surface of the insulating film. The first connection terminal has a larger diameter than the through electrode. A wiring pattern is laminated on a lower surface of the semiconductor substrate. An electrode pad is connected to the wiring pattern. The through electrode is connected to the wiring pattern.

摘要翻译： 半导体器件包括半导体衬底。 通孔延伸穿过半导体衬底。 第一绝缘层覆盖半导体衬底的上表面并且包括与通孔连通的开口。 绝缘膜覆盖通孔和开口的壁表面。 在通孔和开口中形成通孔。 第一连接端子包括形成在通孔的端面上的无电电镀金属层和绝缘膜的端面。 第一连接端子具有比通孔更大的直径。 在半导体基板的下表面层叠有布线图案。 电极焊盘连接到布线图案。 通孔电极连接到布线图案。

公开(公告)号：US20150130082A1

公开(公告)日：2015-05-14

申请号：US14075733

申请日：2013-11-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chung-Yu Lu ,  Hsien-Pin Hu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Tzuan-Horng Liu ,  Shih-Wen Huang ,  Chun Hua Chang

IPC分类号： H01L23/525 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L23/5256 ,  H01L21/4846 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11424 ,  H01L2224/11464 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06586 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/1032 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L21/56 ,  H01L21/304 ,  H01L21/78

摘要： Various structures having a fuse and methods for forming those structures are described. An embodiment is a method. The method comprises attaching a first die to a first side of a component using first electrical connectors. After the attaching, at least one of (i) the first die comprises a first fuse, (ii) the first side of the component comprises a second fuse, (iii) a second side of the component comprises a third fuse, the second side being opposite the first side, or (iv) a combination thereof. The method further comprises after the attaching the first die to the first side of the component, blowing the first fuse, the second fuse, the third fuse, or a combination thereof.

摘要翻译： 描述了具有熔丝的各种结构以及用于形成这些结构的方法。 实施例是一种方法。 该方法包括使用第一电连接器将第一管芯附接到部件的第一侧。 在安装之后，（i）第一管芯中的至少一个包括第一熔丝，（ii）部件的第一侧包括第二熔丝，（iii）部件的第二侧包括第三熔丝，第二侧 与第一侧相对，或（iv）它们的组合。 该方法还包括在将第一管芯附接到部件的第一侧之后，吹入第一熔断器，第二熔断器，第三熔断器或其组合。