公开(公告)号：US20150223316A1

公开(公告)日：2015-08-06

申请号：US14417370

申请日：2013-08-09

申请人： Mitsubishi Electric Corporation

发明人： Junji Fujino ,  Yutaka Yoneda ,  Yoshitaka Onishi ,  Masafumi Sugawara

IPC分类号： H05K1/02

CPC分类号： H05K1/0203 ,  H01L23/13 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/492 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/4005 ,  H01L2224/40105 ,  H01L2224/4024 ,  H01L2224/4118 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83801 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/16152 ,  H01L2924/16172 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/92252 ,  H01L2224/85 ,  H01L2224/40499 ,  H01L2224/8546 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01074 ,  H01L2224/3716 ,  H01L2224/37124 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00 ,  H01L2924/207 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2224/48647 ,  H01L2224/4866 ,  H01L2224/48824 ,  H01L2224/4886 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/48724 ,  H01L2224/4876 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00013 ,  H01L2924/2076

摘要： An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.

摘要翻译： 电力半导体装置包括传热板。 印刷线路板与传热板间隔开预定间隙。 在形成在印刷线路板的外侧的电极条的附近设置有开口部。 电力半导体元件设置在传热板和印刷线路板之间，并附着在传热板上。 布线构件的一端与电力半导体元件的主电极的第一接合部分接合，另一端接合到第二接合部。 第二接合部的至少一部分包括在从主电极延伸到印刷线基板的空间中，并且第一接合部包括在从开口部延伸的空间中。

公开(公告)号：US09099567B2

公开(公告)日：2015-08-04

申请号：US14089744

申请日：2013-11-25

申请人： Lakshminarayan Viswanathan ,  L. M. Mahalingam ,  David F. Abdo ,  Jaynal A. Molla

发明人： Lakshminarayan Viswanathan ,  L. M. Mahalingam ,  David F. Abdo ,  Jaynal A. Molla

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L21/44 ,  H01L23/00 ,  H05K1/14 ,  B23K20/02 ,  B23K35/02 ,  B23K20/24 ,  B23K20/16 ,  B23K20/10 ,  B23K20/00

CPC分类号： H01L24/73 ,  B23K20/002 ,  B23K20/023 ,  B23K20/10 ,  B23K20/16 ,  B23K20/24 ,  B23K35/0244 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/32225 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8348 ,  H01L2224/83484 ,  H01L2224/8384 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01322 ,  H01L2924/04541 ,  H01L2924/04642 ,  H01L2924/0503 ,  H01L2924/1306 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15786 ,  H01L2924/15793 ,  H01L2924/181 ,  H05K3/284 ,  H05K2201/09872 ,  H05K2201/2072 ,  H05K2203/1322 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599

摘要： An embodiment of a method of attaching a semiconductor die to a substrate includes placing a bottom surface of the die over a top surface of the substrate with an intervening die attach material. The method further includes contacting a top surface of the semiconductor die and the top surface of the substrate with a conformal structure that includes a non-solid, pressure transmissive material, and applying a pressure to the conformal structure. The pressure is transmitted by the non-solid, pressure transmissive material to the top surface of the semiconductor die. The method further includes, while applying the pressure, exposing the assembly to a temperature that is sufficient to cause the die attach material to sinter. Before placing the die over the substrate, conductive mechanical lock features may be formed on the top surface of the substrate, and/or on the bottom surface of the semiconductor die.

摘要翻译： 将半导体管芯附接到衬底的方法的实施例包括使用插入的管芯附着材料将管芯的底表面放置在衬底的顶表面上。 该方法还包括使半导体管芯的顶表面和衬底的顶表面与保形结构接触，该保形结构包括非固体，压力传递材料，并向保形结构施加压力。 压力通过非固体的压力传递材料传递到半导体管芯的顶表面。 该方法还包括在施加压力的同时，将组件暴露于足以使管芯附着材料烧结的温度。 在将管芯置于衬底上之前，可以在衬底的顶表面和/或半导体管芯的底表面上形成导电的机械锁定特征。

公开(公告)号：US20150214189A1

公开(公告)日：2015-07-30

申请号：US14165720

申请日：2014-01-28

申请人： Infineon Technologies Austria AG

发明人： Tian San Tan ,  Theng Chao Long

IPC分类号： H01L25/065 ,  H01R4/00 ,  H01L23/31 ,  H01L23/00 ,  H01L25/00 ,  H01L21/56

CPC分类号： H01L25/0655 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/38 ,  H01L24/40 ,  H01L24/48 ,  H01L24/70 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/89 ,  H01L24/97 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05554 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37026 ,  H01L2224/3719 ,  H01L2224/40227 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83143 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83855 ,  H01L2224/84143 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/84825 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/84855 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1425 ,  H01L2924/14252 ,  H01L2924/14253 ,  H01L2924/181 ,  H01R4/00 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/83 ,  H01L2224/84

摘要： A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.

摘要翻译： 半导体器件包括器件载体，安装在器件载体上的第一半导体芯片和安装在器件载体上的第二半导体芯片。 此外，半导体器件包括接合到第一半导体芯片的第一电极的第一接触夹，与第二半导体芯片的第一电极接合的第二接触夹和被配置为保持第一接触夹和第二接触的绝缘连接器 夹在一起

公开(公告)号：US20150179607A1

公开(公告)日：2015-06-25

申请号：US14137478

申请日：2013-12-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Lin Ho ,  Chin-Liang Chen ,  Wei-Ting Lin ,  Yu-Chih Liu ,  Shih-Yen Lin

IPC分类号： H01L23/00 ,  H01L21/762 ,  H01L23/02 ,  H01L21/56

CPC分类号： H01L21/76251 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/04 ,  H01L23/16 ,  H01L23/34 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/3737 ,  H01L23/40 ,  H01L23/4012 ,  H01L23/42 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/26175 ,  H01L2224/27312 ,  H01L2224/27334 ,  H01L2224/29109 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32237 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81 ,  H01L2224/83104 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83493 ,  H01L2224/83862 ,  H01L2224/92122 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/0103 ,  H01L2924/05032 ,  H01L2924/0532 ,  H01L2924/0542 ,  H01L2924/05432 ,  H01L2924/15311 ,  H01L2924/1616 ,  H01L2924/16195 ,  H01L2924/1631 ,  H01L2924/16315 ,  H01L2924/014 ,  H01L2924/0715 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2924/01006 ,  H01L2224/83 ,  H01L25/50 ,  H01L2924/00

摘要： A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

摘要翻译： 提供了一种用于封装半导体器件的方法和结构。 在一个实施例中，第一衬底被结合到第二衬底，第二衬底被结合到第三衬底。 在施加底部填充材料之前，将热界面材料放置在第二基板上。 环可以放置在热界面材料上，底部填充材料分配在第二基板和第三基板之间。 通过在底部填充材料之前放置热界面材料和环，底部填充材料不会干扰热界面材料和第二基底之间的界面，并且热界面材料和环可以充当底部填充材料的物理屏障， 从而防止溢出。

公开(公告)号：US09054231B2

公开(公告)日：2015-06-09

申请号：US13992941

申请日：2011-06-30

申请人： Chung Hoon Lee ,  Dae Sung Kal ,  Ki Bum Nam

发明人： Chung Hoon Lee ,  Dae Sung Kal ,  Ki Bum Nam

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/50 ,  H01L23/00 ,  H01L33/48

CPC分类号： H01L33/507 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/94 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05571 ,  H01L2224/06151 ,  H01L2224/11462 ,  H01L2224/16013 ,  H01L2224/16057 ,  H01L2224/16151 ,  H01L2224/27462 ,  H01L2224/32238 ,  H01L2224/325 ,  H01L2224/33151 ,  H01L2224/81893 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83893 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.

摘要翻译： 一种制造使用组合键的半导体器件的方法和由其制造的半导体器件，该方法包括制备具有在其顶部上排列的多个半导体叠层结构的支撑衬底。 每个半导体堆叠结构包括第一导电半导体层，第二导电半导体层和介于第一和第二导电半导体层之间的有源区。 准备具有第一引线电极和第二引线电极的部件以对应于多个半导体叠层结构。 然后，将半导体堆叠结构保持在支撑基板上，同时保持半导体堆叠结构。 在半导体堆叠结构结合到构件之后，构件被分割。

公开(公告)号：US20150115478A1

公开(公告)日：2015-04-30

申请号：US14328112

申请日：2014-07-10

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Takami OTSUKI ,  Rei YONEYAMA ,  Akihiko YAMASHITA ,  Yoshitaka KIMURA

IPC分类号： H01L23/544 ,  H01L23/12 ,  H01L23/00

CPC分类号： H01L23/544 ,  H01L23/049 ,  H01L23/12 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/49838 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48847 ,  H01L2224/49052 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/85447 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3701 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012

摘要： A power module includes: a base plate having a front surface provided with positioning wire bonding portions; an insulating substrate provided with hole portions accommodating the positioning wire bonding portions on a side of a back surface facing the base plate, and fixed to the base plate with being positioned with respect to the base plate by the hole portions accommodating the positioning wire bonding portions; and a semiconductor chip arranged on a side of a front surface of the insulating substrate opposite to the back surface.

摘要翻译： 电源模块包括：基板，其具有设置有定位线接合部分的前表面; 绝缘基板，其设置有容纳定位线接合部的孔部，所述孔部位于与所述基板相对的背面的一侧，并且通过容纳所述定位线接合部的孔部而相对于所述基板而被定位在所述基板上 ; 以及配置在绝缘基板的与背面相反的一侧的一侧的半导体芯片。

公开(公告)号：US20150115451A1

公开(公告)日：2015-04-30

申请号：US14068496

申请日：2013-10-31

申请人： LAKSHMINARAYAN VISWANATHAN

发明人： LAKSHMINARAYAN VISWANATHAN

IPC分类号： H01L23/00 ,  H01L23/36

CPC分类号： H01L23/047 ,  H01L21/288 ,  H01L21/486 ,  H01L21/4867 ,  H01L21/50 ,  H01L23/057 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/4924 ,  H01L23/49861 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L25/0655 ,  H01L2224/2731 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0461 ,  H01L2924/0469 ,  H01L2924/1421 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/16152 ,  H01L2924/16598 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point of silver, and therefore the finished package can withstand temperatures significantly higher than the manufacturing temperature. Further, since the silver is an interfacial material between the various combined materials, the effect of differing material properties between ceramic, organic, and metallic components, such as coefficient of thermal expansion, is reduced due to low temperature of bonding and the ductility of the silver.

摘要翻译： 提供了结合使用银耦合的陶瓷，有机和金属材料的组合的半导体器件封装。 银在加压和低温下以微粒的形式施加。 应用后，银形成具有典型的银熔点的固体，因此成品封装可承受明显高于制造温度的温度。 此外，由于银是各种组合材料之间的界面材料，所以陶瓷，有机和金属组分之间的不同材料性质（如热膨胀系数）的影响由于低粘结温度和 银。

公开(公告)号：US09000470B2

公开(公告)日：2015-04-07

申请号：US14168561

申请日：2014-01-30

申请人： Cree, Inc.

发明人： Florin A. Tudorica ,  Christopher P. Hussell ,  Amber C. Abare ,  Peter Scott Andrews ,  Sung Chul Joo

IPC分类号： H01L33/00 ,  H01L25/075 ,  H01L33/50 ,  H01L23/00 ,  H01L25/16 ,  H01L33/52

CPC分类号： H01L25/0753 ,  H01L24/48 ,  H01L24/83 ,  H01L25/167 ,  H01L33/505 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10156 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2933/0041 ,  H01L2933/005

摘要： Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the array of LED chips for forming a light emitting surface from which light is emitted upon activation of the LED chips. In some aspects, the wavelength conversion material includes phosphoric or lumiphoric material that is settled and/or more densely concentrated within one or more predetermined portions of the layer. In some aspects, the devices and methods provided herein can comprise a lumen density of approximately 30 lm/mm2 or greater.

摘要翻译： 公开了用于发光二极管（LED芯片）的发光器件和相关方法。 在一个实施例中，发光器件包括衬底和布置在衬底上的LED芯片的板上（COB）阵列。 设置在其中的具有波长转换材料的层设置在LED芯片阵列上，用于形成在LED芯片激活时发光的发光表面。 在一些方面，波长转换材料包括在层的一个或多个预定部分内沉降和/或更密集地聚集的磷酸或荧光材料。 在一些方面，本文提供的装置和方法可以包括大约30lm / mm2或更大的管腔密度。

公开(公告)号：US08987879B2

公开(公告)日：2015-03-24

申请号：US13177110

申请日：2011-07-06

申请人： Ralf Otremba

发明人： Ralf Otremba

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/2745 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/35831 ,  H01L2224/37011 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/83986 ,  H01L2224/84801 ,  H01L2224/92147 ,  H01L2224/92157 ,  H01L2224/92165 ,  H01L2224/92166 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2224/27 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/01005

摘要： A semiconductor device includes a leadframe with a die pad and a first lead, a semiconductor chip with a first electrode, and a contact clip with a first contact area and a second contact area. The semiconductor chip is placed over the die pad. The first contact area is placed over the first lead and the second contact area is placed over the first electrode of the semiconductor chip. A plurality of protrusions extends from each of the first and second contact areas and each of the protrusions has a height of at least 5 μm.

摘要翻译： 半导体器件包括具有管芯焊盘和第一引线的引线框架，具有第一电极的半导体芯片以及具有第一接触区域和第二接触区域的接触夹。 将半导体芯片放置在管芯焊盘的上方。 第一接触区域放置在第一引线上，并且第二接触区域被放置在半导体芯片的第一电极之上。 多个突起从第一和第二接触区域中的每一个延伸，并且每个突起具有至少5μm的高度。

公开(公告)号：US20150076699A1

公开(公告)日：2015-03-19

申请号：US14204203

申请日：2014-03-11

申请人： Kabushiki Kaisha Toshiba

发明人： Yo Sasaki ,  Yuuji Hisazato ,  Kazuya Kodani ,  Atsushi Yamamoto ,  Hitoshi Matsumura

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L24/04 ,  H01L24/29 ,  H01L24/32 ,  H01L24/82 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05655 ,  H01L2224/26152 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/3201 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/32505 ,  H01L2224/82101 ,  H01L2224/83192 ,  H01L2224/83206 ,  H01L2224/83207 ,  H01L2224/83447 ,  H01L2224/83815 ,  H01L2924/01322 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/00012

摘要： According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.

摘要翻译： 根据一个实施例，半导体器件包括半导体元件，互连层和接合层。 互连层包括Cu。 接合层包括在半导体元件和互连层之间的Cu和Cu之外的第一金属的合金的第一合金。 第一合金的熔点高于第一金属的熔点。